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EVG®850 SeriesSOI and Direct Wafer Bonding
IntroductionA reliable wafer bonding process is the key factor for obtaining high quality single crystalline silicon films on insulating substrates. The EVG850 SOI/Direct Wafer Bonding systems are designed to fulfill a wide range of fusion/molecular wafer bonding applications, with main focus on SOI substrates manufacturing.
Ultra clean handling of wafers in class 1* environment throughout the whole process assures high-yield and void-free bonds. All essential steps from cleaning and alignment to pre-bonding and IR-inspection are combined in one high volume production system. The EVG850 is a production bonding system built to operate in high throughput, high-yield environments and guarantees void-free SOI wafers up to 300 mm. Thus the EVG850 has been established as the industry standard in the SOI wafer market.
The EVG850 can be configured for optimum efficiency with cleaning, plasma activation, pre-bonding and IR-inspection modules. For clean, automated handling send and receive cassette stations with ergo load or SMIF load ports, robot and optical pre-aligner are used.
Production Bonder for SOI and Direct Wafer Bonding
The EVG850 integrates all necessary process steps, from cleaning, pre-bonding and quality inspection using an IR-inspection station, for SOI and direct wafer bonding in one footprint-optimized equipment.It guarantees high yield as well as high throughput and is established as industry standard for SOI bonding.
Unique Features / System Configuration Automatic cassette-to-cassette or SMIF-to-SMIF
operation Contamination-free backside handling Megasonic and/or brush cleaning Pre-bonding with mechanical flat or notch alignment Advanced remote diagnostics
Integrated LowTemp™ plasma activation module (EVG850LT) IR-inspection station for quality inspection Two platform sizes (up to 200 mm wafers and
up to 300 mm wafers)
Production Bonder for SOI and Direct Wafer Bonding with LowTemp™ Plasma Activation
The EVG850LT automated system for mechanically aligned SOI/Direct Wafer bonding is equipped with EVG's LowTemp plasma activation series chambers. After surface activation the wafers are directly bonded on EV Group's field proven pre-bonding station that is standard for SOI/Wafer Direct Bonding using mechanical flat-to-flat or notch-to-notch alignment.
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EVG®850 Series | SOI and Direct Wafer Bonding
EVG®850 Production bonder for SOIand direct wafer bonding
EVG®850LT Production bonder for SOI and direct wafer bonding with LowTemp™ plasma activation
*according to US FED STD 209E
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Cleaning Module
The cleaning module enables effective removal of particles, low chemical consumption and quick spin drying without backsplash. Each single wafer cleaning station can be configured, besides standard DI-water rinse, with following options: megasonic nozzle, megasonic area transducer, brush and diluted chemicals for single-side cleaning.
LowTemp™ Plasma Activation Module
Plasma surface activated fusion bonding considerably reduces the annealing temperatures (200°C - 400°C) and times (1-3 hours) without decreasing resulting bond strengths. The LowTemp plasma activation module enables high flexibility to accomodate various materials by featuring dual frequency plasma for uniform activation, high purity gas supply systems and dynamic pressure control.
Cleaning module on EVG®850 LowTemp™ plasma activation module on EVG®850LT
EVG®850LT Production bonder for SOI and direct wafer bonding with LowTemp™ plasma activation
Modular DesignCleaning Module As cleanliness is the most important factor for void-free bonds, the EVG850 series integrates cleaning modules of EV Group's single wafer cleaning series (EVG300), which clean wafers using DI-water rinse as well as megasonic, brush and diluted chemicals.The cleaning module enables reliable surface conditioning and final particle removal to guarantee high yield bonding.
LowTemp™ Plasma Activation ModuleThroughout plasma activation the surface chemistry of two materials to be bonded can be tailored to allow formation of stronger chemical bonds than achievable for non-activated surfaces of reduced annealing temperature.
Pre-bond ModuleThe proprietary design allows easy flat-to-flat or notch-to-notch alignment. Variable positions of the bond pin allow flexible bond wave initiation dependent on the actual bonding application.
IR-inspection StationThe integrated IR-inspection station enables to display and store an image of each bonded wafer pair for process traceability.
Automated Wafer Handling System The field proven class 1* compatible wafer handling robot on EVG850 and EVG850LT enables 24 hour automated casset-te-to-cassette or SMIF-to-SMIF operation for the highest throughput. Surfaces in contact with wafers do not cause any metal ion contamination.
Class 1* Mini-EnvironmentThe EVG850 production bonder for SOI and direct wafer bonding can be equipped with class 1* mini-environment filter fan unit to ensure particle-free operation.
Pre-bond Chamber
A high vacuum chamber with programmable contact pressure supports wafer bonding in vacuum or in controlled atmospheres. EV Group's pre-bond chamber design allows easy configuration of the system for different wafer sizes. The conversion time of the process station is less than 1 hour.
IR-inspection Station
The IR-inspection station is used for quality inspection of bonded wafers. The automated quality inspection is provided by EV Group's proprietary software algorithms. Stored IR-images are scanned for voids, which are being displayed on a summary screen. Wafers that do not meet acceptance criteria are sorted out. Images can be stored together with wafer IDs for later reference.
IR-inspection station on EVG®850Pre-bond chamber on EVG®850
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EVG®850 Series | SOI and Direct Wafer Bonding
*according to US FED STD 209E
Automated Wafer Handling System
The robot unloads wafers from the cassette or FOUP and places them on the optical pre-aligner before loading them onto the process station.After bonding and IR-inspection the bonded wafer pairs are loaded back into the cassettes. Optimized vacuum handling through the wafer backside provides best cleanliness with regards to particles and metal ions contaminations.
Software and Process Control
A Windows® based graphical user interface with touch screen input provides user friendly operation with drag and drop icons for easy programming. The EVG850 provides three levels of access to the process control software (operator, engineer and administrator). The whole process is fully software controlled with programmable parameters. All process data are stored in log files.
Automated wafer handling system on EVG®850 Software and process control on EVG®850
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EVG®850 Production bonder for SOI and direct wafer bonding
Technical Data
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EVG®850 Series | SOI and Direct Wafer Bonding
EVG®850 EVG®850 EVG®850 EVG®850LT EVG®850LT
Max. wafer size (mm) 200 300 450 200 300Min. wafer size (mm) 100 150 300 100 150
Cleaning module
Open chamber, spinner and cleaning armChamber: Made of PP or PFA Spinner chuck: Vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materials, rotation up to 3000 rpm, acceleration to 3000 rpm in 5 secondsCleaning arm: For up to 5 media lines (1 megasonic system uses 2 lines)Media: DI-water (standard), NH4OH and H2O2 with max. 2% concentration (option)
Megasonic nozzle Features
Frequency: 1 MHz (3 MHz option)Output Power: 30-60 WDI-water flow rate: up to 1.5 Liter/minEffective cleaning area: Ø 4.0 mmMaterial: PTFEOne nozzle covers all wafer / substrate sizes
Megasonic area transducer
Features
Frequency: 1 MHz (3 MHz option)Power: max. 2.5 W/cm² active area (max. output 200 W)DI-water flow rate: up to 1.5 Liter/minEffective cleaning area: triangle shape guarantees high radial uniformity on waferMaterial: SS and SapphireWafer sizes: Dual zone systems for 300/200 mm and 200/150 mm wafers. Multi zone systems for multiple wafer sizes.
Brush FeaturesMaterial: PVAProgrammable parameters: Brush and wafer speed (rpm)Adjustable parameters: Brush compression, Media dispense
LowTemp™ plasma activation module N/A
Chucks for different wafer sizesMetal ion free activationProcess gases: 2 standard process gases: N2 and O2 and 2 additional process gases: high purity gases (≥ 99.999%), noble gases (Ar, He, Ne, etc.) and forming gases (N2, Ar withup to 4% H2)Universal mass flow controller: self calibrating for up to 4 process gases, recipe programmable and up to 20.000 sccm flow rateVacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump)High frequency RF generators and matching unit: StandardProcess license and BKM recipe
Pre-bonding module
Alignment type: flat-to-flat or notch-to-notchAlignment accuracy: X and Y: ±50 µm, Theta: ±0.1°Bond force: up to 5 NBond wave initiation position: flexible from wafer edge to centerVacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump)
IR-inspection stationVisible wafer diameter: up to 200/300 mmCamera resolution: 570 x 485 pixels (200 mm platform) and 1360 x 1024 pixels (300 mm platform)
Loading of stations / chambers AutomatedProcess compatibility with EVG®300
and EVG®810Standard
Max. number of cleaning modules 2Max. number of LowTemp™ plasma
activation modulesN/A 2
Max. number of pre-bonding modules 2Max. number of IR-inspection stations 1
Class 1* mini-environment OptionAutomated wafer handling system Standard
Fab automation integration (SECS/GEM) Option
Other sizes, media, process gases, features and configurations upon request
*according to US FED STD 209E
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Process Results
SOI wafers produced utilizing EVG®850 and SmartCut® technology | Courtesy of SOITEC
AMD's Opteron CPU based on SOI technology | Source: AMD
150mm GeOI bond enabled through EVG's LowTemp™ plasma activation | Source: EVG
IR image of void free bonded wafer pair after plasma activation | Courtesy of LETI
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Data, design and specifications may not simultaneously apply; or depend on individual equipment configuration, process conditions and materials and may vary accordingly. EVG reserves the right to change data, design and specifications without prior notice.
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