emerging research materials and processeschm.pse.umass.edu/nmsworkshop/protected/herrslides.pdf3.3...
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February 11, 2008
Recipient of the 2005 National Medal of Technology
Emerging Research Materials and Processes
Center For Hierarchical Manufacturing - National Nanomanufacturing Network: Nanomanufacturing Systems Workshop
Daniel J.C. Herr, DirectorNanomanufacturing [email protected]
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Background and motivation
Nanomanufacturing research prioritiesOverview Selected strategic research opportunities
Key messages
Overview
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Functional Diversification
Adding value through functional scaling on CMOS:Dimensional scaling + integration of functional materials
12/2006 ITRS Meeting, Taiwan
Goals: Sense, Power, Process, Interact, Empower
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Rising Cost of Wafer Fabs Vs. GNPs
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Difficult Material Scaling Challenges
Line-edge Roughness
Long-Range Dimensional Control and Repeatability
Pattern Fidelity
Resolution: Catalytic Blurring
What Designers See What Inspectors See
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Nanomanufacturing Research Priorities
Patterning Nanoengineered/Emerging Materials1.1 Directed Self-Assembly1.2 Nanoimprint Patterning 1.3 Post NGL Patterning1.4 Manufacturing for Design1.5 NGL Extensibility/Limits1.6 Low-Volume Patterning
2.1 ITRS Identified Emerging Research Materials2.2 Functional Diversification and Heterogeneous Integration on CMOS2.3 Low-Temperature Materials and Processes2.4 Materials by Design2.5 Deterministic Fabrication
Environment, Safety, Health Nanocharacterization/Metrology/Modeling
4.1 Water and Energy4.2 Design for ESH4.3 Additive/Wasteless Processes4.4 ESH Impact of New and Nanomaterials for CMOS4.5 Sustainable Chemical Substitution4.6 Hierarchical Assessment
3.1 Limits of Known Characterization Methods3.2 Nanoscale Defects, Visual, and Non-Visual3.3 Breakthrough Methods; e.g. In-situ 3D Imaging of Atomic and Nanoscale Materials3.4 Metrology for MFD and DFM3.5 Measuring Coupled Nanoscale Phenomena3.6 Nanoscale Probe-Sample Measurement Uncertainty
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Directed self-assembly:Can it extend nanomanufacturing?
2012 ITRS Emerging Research Material Requirements: Self Assembling Materials
Metric Requirements
Defects <0.02 20 nm defects cm-2 [Develop a basic understanding of material and process defect related mechanisms; Develop
strategies to achieve projected ITRS requirements]
Low Frequency LER ~2.1 nm 3 σ
Gate CD Control ~1.7 nm 3 σ
Resolution 11 nm
Essential shapes Dense and isolated L/S, circles, hexagonal arrays
Overlay and registration 5.1-7.1 nm 3 σ
Mean Throughput 1 W/Min[Via single wafer or batch processing]
Etch and pattern transfer Satisfy projected ITRS requirements for patterning electronically useful features
Placement and orientation 20% of the critical dimension
Multiple Sizes-Pitches/Layer 2-3/layer
Ease of integration Compatible with CMOS processing
Overall Performance Competitive with chemically amplified resist processing
Other ESH impact requirements? Functional diversification applications?
Addressed by SRC’s Research Team
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Essential Features for Integrated Circuits
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Comparison of Subtractive VersusBio-assisted Self-Assembly/Patterning
EUV Lithographic Patterning
[Subtractive Patterning 32 nm]
Growth of a Baby
[Bio-Assisted Self-Assembly]
Assisted Assembly
Advantage
Bits patterned per second
~ 8.59E+09 bits/s/masking
layer
7.53E+17amino acid
equivalents/s
1.29E-20J/amino acid
equivalent[4.57 KTLn(2)]
~ 9E+07
Energy required per
bit
> 1.46E-12J/bit/masking
layer> 1E+8
Consider leveraging natural processes
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Manufacturing for Design:Technology - Design Interdependencies
Materials
Processes
Devices
Circuits
Systems
Architectures
Applications
Design for Manufacturing Manufacturing for Design
Regular Fabrics Directed Assembly
Application Specific Materials
Global Optimization of: Variability, Performance,
Matching, Centering, Reliability, Cost, &
Sustainability
Circle of Innovation
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1.00E+00
1.00E+02
1.00E+04
1.00E+06
1.00E+08
1.00E+10
1.00E+12
1.00E+14
1.00E+16
1.00E+18
1.00E+20
1.00E+22
1.00E+24
1.00E+26
1945 1955 1965 1975 1985 1995 2005 2015 2025 2035 2045 2055
Ato
ms
per B
itNanoengineered Materials: Macromolecular Scale Devices are on the ITRS Horizon
ITRS
Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp. 34-43 (2001).
Macromolecular Scale Components:Low dimensional nanomaterialsMacromoleculesDirected self-assemblyComplex metal oxidesHetero-structures and interfacesSpin materialsBenign and sustainable nanomaterials
Macromolecular Scale Devices
Emerging Research Materials
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Functional Diversification:Information and Energy Management
Distributed intelligent networks of autonomous systems composed at the nano-level with adaptive
emergent behaviors;
High Altitude Long EnduranceRemotely Operated Aircraft
H2 Fuel Cell Powered,Nanotube Composite Aircraft
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Thermal and odor (?) via thermal expansion
Odor (e.g., sex) via protein gating
Vibration and odor via hair arrays and shaft-like mechanical motion
Functional Diversification:Sensing–thermal, chemical, mechanical
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Functional Diversification: Prototypical Semiconductor Bioelectronics Roadmap
2007
2xxx
A p p l i c a t i o n
Implantable microsystems
Tablet PC
ClinicalAssistant
2D arrays of pressure sensors with sub10 μm resolution
High-resolution tactile imaging for palpation
R e s e a r c h G o a l
Sub10μm probe electrodes
Bio-FET
Sensing state of individual cell
A two-way interface between neurons and transistors
On-chip integrated energy sources
e.g. artificial eye
Biomimetic material architecure, nanofabrication, and function
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Low Temperature Processes: Pure MulticomponentOxides with Peptides as Mineralizing Agents
No firing with catalyzed growth process!No firing with catalyzed growth process!
G. Ahmad, M. B. Dickerson, B. C. Church, Y. Cai, S. E. Jones, R. R. Naik, J. S. King, C. J. Summers, N. Kroger, K. H. Sandhage, Adv. Mater., 18, 1759-1763 (2006).
Degrees 2qDegrees 2q
Rel
ativ
e In
tens
ityR
elat
ive
Inte
nsity
Room-Temperature Fabrication of Complex Ceramics
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Low Temperature Processes: Packaging - Thermal Behavior of Metal Nano-particles on Substrates
Au
Ex. Droplet on Demand patterning enables low temperature [130C] Cu sintering and enhanced conductivity.
V. Subramanian and J. Bokor
What is the ESH impact of 5 nm Cu particles?
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Nanomaterials by Design
The catalysis rate of ethylene to vinyl acetate is a function ofthe atomic spacing between Pd atoms in the Pd-Au matrix.
M. Chen et. al., The Promotional Effect of Gold in Catalysis by Palladium-Gold, Science, 310 [5746], pp. 291-293 (2005).
What is the correlation between the atomic structure of a surface or catalyst and thin film growth or CNT helicity?
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The Structure-Property Challenge: The Need for a Predictive Material by Design Capability
Wang et al., Materials Today, 2002Wang et al., Materials Today, 2002
Example. Example. Zinc oxide Zinc oxide
Why does zinc Why does zinc oxide express oxide express different different shapes and shapes and different different physicophysico--chemical chemical properties,properties,with the same with the same zinc oxide zinc oxide composition?composition?
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Deterministic Fabrication:Goal - Reduce device variability
ITRS Trend for the Number of Channel Electrons
Conductance variability reduced from 63% to 13% by controlling dopant numbers and roughly ordered arrays;
Conductance due to implant positional variability within circular implant regions of the ordered array ~ 13%.
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No.
of
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ann
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D. Herr, with data from the 2005 ITRS
~2014
S D
From Shinada et. Al., “Enhancing Semiconductor Device Performance Using Ordered Dopant Arrays”, Nature, 437 (20) 1128-1131 (2005) [Waseda University]
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1×1018atoms/cm3
10nm
10nm
10nm
D. Herr, The Potential Impact of Natural Dopant Wavefront (NDW) Roughness On High Frequency Line Edge Roughness Requirements II, Cavin’s Corner: SRC (June 2006) and Future Fab (September 2006).
Deterministic fabrication: Continued
a)STM image of In nanoclusters on Si(111) at an In coverage of ~0.05 monolayers [Ref.: Li, et. Al., Physical Review Letters, 88, 66101 (2002);
b)Simulation of current flow vsdiscrete dopant positions [Ref.: David L. Jaeger, Victor V. Zhirnov, Daniel J. C. Herr, SRC Review of Deterministic Doping Project (2003)].
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Key Messages
The convergence of today’s difficult challenges, emerging market drivers, and recent breakthroughs in materials technology represents a rare opportunity for chemists, chemical engineers, materials scientists, and others to develop breakthrough material and process insertion options;
This is a good time for the research and development communities to question some of our basic assumptions.
Must the percent variability, with respect to projected application and architecture requirements, increase with functional density? Do emerging materials and processes exist that could enable new and more favorable cost curves for nanoelectronics fabrication? With respect to functional diversification, is it possible to design custom nanomaterials with electronically useful, application specific functionality?
However, it remains to be seen whether potential material and process solutions are identified and matured in time to impactkey insertion windows.
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1870 1880 1890 1900 1910 1920 1930
Transfer of Knowledge
Entrant Co formed
Market production (Established Technology)
T1~ 20years ~12years
T2 T3
Solid State DiodeT1 26 (1874-1900)T2 7 (1900-1907)T3 6 (1907-1913)Learning Period 13 years
Vacuum TubeT1 20 (1884-1904)T2 9 (1904-1913)T3 6 (1913-1919)Learning Period 15 years
TransistorT1 25 (1923-1948)T2 6 (1948-1954)T3 5 (1954-1959)Learning period 11years
Integrated CircuitT1 17 (1942-1959)T2 3 (1959-1961)T3 5(1961-1966)Learning Period 8 years
Human Carrier Sponsor 1st Customer
Example: Solid State Rectifier
Enabling B
ackground exists
Estimates of R&D Pipeline Latency forthe Semiconductor Industry: Time Gaps
Discovery phase ~20 yrs; Innovation phase ~12 yrs.
Prototype built (Disruptive Technology)
V. Zhirnov/SRC
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Thank you