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    ELECTRONICS I

    ELEE 3301

    COURSE SYLLABUS: SPRING 2011 SEMESTER

    Objectives Introduce students to the basic principals of electronics devices andcircuits. ELEE 3301 at a glance

    (1)Learn the operation of diode and its application(2)Learn the physical operation and characteristics of MOSFET(3)Learn the physical operation and characteristics of BJT(4)Learn the small signal models and use them to analyze the

    performance of single transistor circuits

    (5)Learn the operation of amplifier, switchSchedule MWF 10.45 A.M.-11:35 A.M.,

    Class Room: Education Complex 1.502

    Text Author: Adel S. Sedra and K. C. Smith, Title: Microelectronic

    Circuits Publisher: Oxford University Press, Edition: 6th

    Reference R.C. Jaeger, and T.N. Blalock. Microelectronic Circuit Design,

    Edition, McGraw-Hill, 2004

    Instructor Hasina F Huq, [email protected],

    Office: 3.278 ENGR, Phone: 956-384-5017,

    Office Hours: MWF 9.40 A.M.-10.40A.M. R: 1.00PM-4.00PM

    OR BY APPOINTMENT

    Prerequisites Electrical Circuits I ELEE 2320 with a grade of C or better, Credit for

    or enrollment in ELEE 2321.

    Grade Typical Grade weighting:

    Homework 5%,

    Attendance 5%

    Midterms I, II, III 40%

    Quizzes 20%

    Lab 10%

    Final Exam 20%

    Projects Homework and Short Quizzes:

    Homework and Projects must be turned in when due (by 5 pm); late

    homework and projects are not accepted. In general, we will have a

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    number of short quizzes (5-10 minutes) covering previous meeting's

    material. There are no makeups for a missed quiz. Although makeups are

    discouraged, it is possible to makeup a major exam due to sickness, but

    only one makeup is allowed per semester.

    Grading A(>90%), B(80 - 89%), C(70 -79%), D(60 - 69%), F(

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    List of Topics Subject to change as the semester progresses.

    Class Topic Ref.

    Week 1 Diode Circuit Analysis; Diode Circuits 3.1-3.5

    Week 2-3 Rectifier, wave-shaping circuits, 3.5-3.10

    Half-Wave Rectifiers, Full-Wave Rectifier Design;

    Design Tradeoffs

    DC-DC Converters

    Wave-Shaping Circuits; Dynamic Switching

    Photodiodes, Solar Cells, LED

    Midterm 1

    Week 4-7 MOSFET Physical Operation and 4.1-4.12

    MOSFET Characteristics

    Transfer Characteristics, MOSFET Circuits at DC

    MOSFET Models, MOSFET Amplifiers,

    MOSFET Biasing Analysis, Small Signal Operation

    Midterm 2

    Week 8-11 Bipolar Junction Transistor Physical Operation 5.1-5.11

    I-V Characteristics, BJT Circuit Models

    MOSFET Circuits at DCBJT Biasing, BJT Amplifiers,

    BJT Biasing Analysis, Small Signal Operation

    Week 12 Introduction to Electronics 1.1-1.8

    Week 13 Operational Amplifier 2.1-2.9

    Inverting and non-Inverting

    Configuration, Difference Amplifier

    Open loop gain, Bandwidth

    Large Signal Operation

    Integrators and Differentiators

    Midterm 3

    Week 14

    Review

    Final Examination

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