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DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The quoted trademarks are property of their owners.

© 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 1

Electronic Costing & Technology Experts

www.systemplus.fr21 rue la Nouë Bras de Fer44200 Nantes – France

Phone : +33 (0) 240 180 916 email : [email protected]

November 2016 - Version 1 - written by Elena Barbarini

2 40V MOSFET Review

Table of contentsGlossary1. Introduction & Market 5

– Executive Summary

– Power devices life cycle

– MOSFET manufacturing process

– MOSFET technology

– MOSFET hystory

– MOSFET players

– Analysed Devices

2. Technology and Cost analysis 13– MOSFET Performances 14

– Infineon 18

– Company profile

– Devices Performances

– Device Cost Structure

– BCS010N04LS

– IPD100N04S4

– BSC016N04LS

– IPZ40N04S5L

– IR 58

– Company profile



– IRFS3004TRL7PP

– IRL7472L1TRPbF

– ON Semiconductors 81

– Company profile



– NVTFS5811NLTAG

– NTTFS5C453NLTAG

– NVMFS5C404NT1G

– Fairchild 113

– Company profile



– FDMS8320LDC

– FDBL0065N40

– STMicroelectronics 136

– Company profile



– STD64N4F6AG

– STP360N4F6

– STH410N4F7-

3. Mosfets Comparison 167– 100 A MOSFET

– 200 A MOSFET

Contact

3 40V MOSFET Review

Introduction & Market

Technology and Cost• Infineon• IR• ON Semiconductor• Fairchild• STMicroelectronics

Cost Comparison

EXECUTIVE SUMMARY

• This report presents an in-depth analysis of the latest innovations in 40V MOSFET devices. It shows the differences between

18 selected devices from Infineon, International Rectifier (IR), Fairchild, ON Semiconductor and STMicroelectronics.

• For each device, it shows details about the manufacturing process and materials used, packaging structure, component

design, die size, electrical performance and current density. It then compares the components’ electrical performance,

technical choices and cost structure.

• 40V silicon MOSFETs are standard devices commonly used in many applications, such as automotive, industry, computing and

storage, home appliances and audio and imaging. The overall market for MOSFETs rated up to 40V was worth $2.64B in 2015.

• In the report, we analyze products from the five main manufacturers. Among them Fairchild and IR have been recently

acquired by ON Semiconductor and Infineon, respectively. These acquisitions will push the companies to choose, in the near

future, between products in the portfolio, based on cost and performance.

• In the report, we show the technical choices in the design of the devices and find that the most common design is a gate

trench with diode shield. However die dimensions vary widely, leading to cost differences.

4 40V MOSFET Review



Cost Comparison

Mosfets Technology

5 40V MOSFET Review



Cost Comparison

MOSFETs Analyzed

manufacturer Year Device MosfetVoltage

breakdown

Current at

25°CDie area

Die area

mm2

Current

density

I/mm²

Rdson mohm

@ 10VQg (nC)

ONSemi 2012 NVTFS5811NLTAG gen 2 40 40 1.55x2.26 3.5 11.43 5.8 17.0

ONSemi 2016 NTTFS5C453NLTAG gen 3 40 107 1.4x2.3 3.1 34.52 2.5 16.0

ONSemi 2015 NTMFS5C430NLT1G gen 3 40 200 1.63x3.6 5.86 34.13 1.2 32.0

ONSemi 2015 NVMFS5C404NT1G gen 3 40 378 3.7x3.86 14.28 26.47 0.57 128.0

Faichild 2012 FDMS8320LDC old gen 40 192 3.55x3 10.65 18.03 0.8 121.0

Faichild 2015 FDD9407L_F085 new gen 40 100 3.79x2.45 9.28 10.78 1.4 96.0

Fairchild 2014 FDBL0065N40 new gen 40 300 3.64x6.56 23.87 12.57 0.5 220.0

Fairchild 2015 FDB0105N407L new gen 40 460 3.62x6.59 23.85 19.29 0.6 208.0

STMicro 2014 STD64N4F6AG STripFET F6 40 54 1.85x2.12 3.92 13.78 7 44.0

STMicro 2012 STP360N4F6 STripFET F6 40 120 4.5x5.6 25.2 4.76 1.8 340.0

STMicro 2015 STH410N4F7-6AG STripFET F7 40 200 4.46x6.24 27.83 7.19 0.8 141.0

Infineon 2014 BCS010N04LS Optimos 40 100 3.65x2.62 9.67 10.34 1 95.0

Infineon 2010 IPD100N04S4 Optimos T2 40 100 2.7x3.8 10.26 9.75 1.7 91.0

Infineon 2014 IPLU300N04S4 Optimos T2 40 300 6.67x3.72 24.81 12.09 0.53 221.0

Infineon 2011 BSC016N04LS G optimos3 40 100 2.56x3.85 9.85 10.15 1.3 54.0

Infineon 2015 IPZ40N04S5L Optimos T5 40 40 2.23x1.53 3.41 11.73 2.8 39.0

IR/Infineon 2010 IRFS3004TRL7PP HEXFET 40 400 4.25x6.9 29.32 13.64 0.9 160.0

IR/Infineon 2016 IRL7472L1TRPbF DirectFET 40 645 5.56x6.55 36.41 17.71 0.34 220.0

6 40V MOSFET Review



Cost Comparison

Mosfets Performances

7 40V MOSFET Review



Cost Comparison

Devices Supply chain

8 40V MOSFET Review



Cost Comparison

9 40V MOSFET Review



Cost Comparison

Device Performances

10 40V MOSFET Review



Cost Comparison

Die cost




Cost Comparison




Cost Comparison

Package Opening

Infineon

IPZ40N04S5L-2R8




Cost Comparison

Die transistor

Infineon

IPZ40N04S5L-2R8




Cost Comparison




Cost Comparison

Infineon Analysed Devices




Cost Comparison

Infineon

IRFS3004TRL7PP




Cost Comparison

Die process

Infineon

IRFS3004TRL7PP




Cost Comparison

Die superjunction

Infineon

IRFS3004TRL7PP




Cost Comparison




Cost Comparison

Die process




Cost Comparison

Hypothesis




Cost Comparison

ONSemi

NVMFS5C404NT1G




Cost Comparison

Package Opening

ONSemi

NVMFS5C404NT1G




Cost Comparison

Die transistor

ONSemi

NVMFS5C404NT1G




Cost Comparison




Cost Comparison

Die process




Cost Comparison

Fairchild

FDBL0065N40




Cost Comparison

Package Opening

Fairchild

FDBL0065N40




Cost Comparison

Die process

Fairchild

FDBL0065N40




Cost Comparison




Cost Comparison

STMicro Performances




Cost Comparison

Hypothesis




Cost Comparison

Die cost




Cost Comparison




Cost Comparison

Die process

Source design

STMicro

STH410N4F7




Cost Comparison

Die transistor

STMicro

STH410N4F7




Cost Comparison

100A Die Structure and Cost Comparison


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