非平衡固液界面の電子物性 - photon factorypfimr electric double layer transistor...

Electric Double Layer TransistorIMR

岩佐義宏

東北大学金属材料研究所

JulyJuly 88－－1010, 2009, 2009

非平衡固液界面の電子物性

高エネルギー加速器研究機構高エネルギー加速器研究機構

固体（電子伝導体）

液体（イオン伝導体）

ERLERLサイエンスワークショップサイエンスワークショップ


Organics, and Nitrides:H. Shimotani, H. T. Yuan, J. T. Ye,(IMR, Tohoku U)

Oxides:M. Kawasaki, K. Ueno, A.Ohtomo, A. Tsukazaki(WPI-AMR, Tohoku U)

LT Physics:T. Nojima, S. Nakamura, H. Aoki, N. Kimura(IMR, Tohoku U)

Acknowledgement


OUTLINE

はじめに: 電界効果トランジスタ (FET) と電界誘起超伝導

電気2重層トランジスタ (EDLT)

様々な物質への応用

有機半導体

酸化物半導体 ZnO、SrTiO3

イオン液体


+ + + +

- - - -

Physical control of carrier densityPhysical control of carrier density: Electric field effect: Electric field effect

CapacitorCharge accumulation device

Field Effect Transistor (FET)Current switching device

Invention of Si-MOSFETD. Kahng & M. M. Atalla （1960）

Electric Field Control of Electric Field Control of superconductorsuperconductorR. E. Glover, III & M. D. Sherrill (1960)R. E. Glover, III & M. D. Sherrill (1960)

Dinsulator

semiconductor

S

G

I

ResistanceResistance measurementmeasurementof capacitor electrodesof capacitor electrodes (1906)(1906) Patent of MOSPatent of MOS--FET (1930s)FET (1930s)


History 1History 1

Electric Field Control of Electric Field Control of TcTc in superconductorin superconductor

R. E. Glover, III and M. D. Sherrill, Phys. Rev. R. E. Glover, III and M. D. Sherrill, Phys. Rev. LettLett. 5, 248 (1960).. 5, 248 (1960).

IndiumTc = 4.1 K, ΔTc = - 0.8 x 10-4 K

Question:Can you increase Tcfrom zero to finite?


C. H. Ahn, J.-M. Triscone, and J. MannhartNature 423, 1015 (2003).YBa2Cu3O7-δ

History 2History 2Discovery of high Discovery of high TcTc cupratescuprates and its field effectand its field effect

Chemical doping to insulators yields high Tc (1986)

Field-effect in high Tc with chemical aids (1991)


Solid GateG

DGate insulator

semiconductor

S

300 nm

Our approachOur approach（（２００４～２００４～））

Liquid gate（electric double layer transistor）

Semiconductor

1 nm

Conventional FETConventional FET

G

Weak electric field～１MV/cm< 1 x 1013 cm-2

Strong electric field＞10MV/cm～ 1 x 1015 cm-2

+ + + + +

ー－－－－

Electric Double Layer TransistorIMRelectrostatic chemical

Charge Accumulation Devices

ElectrolyticCondenser(Almina)

Li SecondaryBattery

Electric Double LayerCapacitor

100μ1μ 10000μ 1 100 10000Capacitance (F)


Lithium Ion Secondary BatteryElectric Double Layer Capacitor

Comparison of charge accumulation devices


Electric Double Layer (EDL)Electric Double Layer Capacitor (EDLC)

-

-+

-++-

+

Ele

ctro

stat

ic P

oten

tial


Electric Double Layer (EDL)Electric Double Layer Capacitor (EDLC)

-

-+

-++-

+

Ele

ctro

stat

ic P

oten

tial

+ --

+ --

+

+

----

+

+++

EDL（ ~1 nm ）

ID

Replace one of the electrodes by

EDL-transistor (EDLT)large capacitancelarge charge density

D

S

EDLC on market (Japan Chemicon Inc.)


S

S n

C6H

13

C6H

13

polythiopheneRR-P3HT

Organic semiconductorSingle crystal, Rubrene

0.5 μm

H. Shimotani et al., APL (2006),JJAP (2007)

Single walled carbon nanotubesSWNT

Application of EDLTs to high density charge accumulation in organic semiconductors

H. Shimotani et al., APL (2005)

H. Shimotani et al., APL (2006)


応用：イオンゲルをゲートに用いるトランジスタを印刷で作製

C. D. Frisbie et al., Nat. Mater. 7, 900 (2008).

基礎：有機単結晶を用いた低電圧動作

PDMS [3]

Parylene [2]Air [1]

SiO2 [4]

[5][6]

[7]

present EDLT

She

et c

ondu

ctan

ce （

μS）

4

3

2

1

0–80 –60 –40 –20 0

Gate voltage （V）

old EDLTs

(200 nm)(2-4 μm)

(1 μm)(3 μm)

有機トランジスタへの展開

H. Shimotani et al., JJAP 46, 3613 (2007)


Device fabrication

ScAlMgO4substrate

Mg0.1Zn0.9O(150 nm)

ZnO (700 nm)

Low carrier density and high mobility

μ = 100 cm2V–1s–1

n = 7.7 × 1015 cm–3

ZnO single crystalline thin film

EDL-FET

Tsukazaki et al., APL 88, 152106 (2006)

60 μ

m

220 μm

PhotolithographyIon milling

ZnO


Device fabrication

ScAlMgO4substrate

Mg0.1Zn0.9O(150 nm)

ZnO (700 nm)


μ = 100 cm2V–1s–1

n = 7.7 × 1015 cm–3


EDL-FET


ZnO

CH2CH2 O

Polymer electrolytepolyethyleneoxyde

KClO4

（[O]/[K] = 20/1）

nTi/Au electrode


Device fabrication

ScAlMgO4substrate

Mg0.1Zn0.9O(150 nm)

ZnO (700 nm)


μ = 100 cm2V–1s–1

n = 7.7 × 1015 cm–3


EDL-FET



Characteristics of ZnO-EDLT

n-type operation

20

15

10

5

020

I D (

μA)

Leak

cur

rent

(μA

)

0 0.8 1.6 2.4 3.2Gate voltage (V)

VDS = 0.1 V

Transfer curve

0 0.2 0.4 0.6 0.8 1

120

80

40

0

Drain voltage (V)I D

(μA

)

VG

(V)3.1

3.0

2.9

2.8

2.7

2.6

Output curve


Direct measurement of carrier density (Hall effect )

0.8

0.6

0.4

0.2

0

5

4

3

2

1

0

She

et c

ondu

ctan

ce (

mS

)

Car

rier

dens

ity (

1013

cm–2

)0 0.5 1 1.5 2 2.5 3

Gate voltage (V)

ne = Q = CV

Solvent moleculeIon

- - -

+ + +

C ~ 7.8 μF/cm2

EDL

ZnO

5–5 0

VH/I D

(kΩ

)210

–1–2

B (T)

01.423

VG(V)

thickness of EDL ~ 1 nm

(cf. 15 μF/cm2 on Au)

(ε = 10 ε0 for PEO solvent)

H. Shimotani et al. APL 91, 082106 (2007)


Gate-induced Insulator-metal transition in ZnO

ZnO

H. Shimotani et al. Appl. Phys. Lett. 91, 082106 (2007)


2.5V

3.5V

2.25V

VG = 2V

2.75V3V

T ( K )

EDLTR

( Ω

/ □)

SrTiO3 / KClO4 / Pt

h / e2

100 300200102

0

106

104

Temperature dependence of resistance in SrTiO3 EDLT

Insulator

Metal

Electric Double Layer TransistorIMRT ( K )

R(

kΩ /□

)0.4

10.80.60.40.20

0.1

0

0.2

0.3I = 30 nA

VG = 3V

μ0H= 0 T

R(

kΩ/ □

)

μ0H ( T )

0.3

0.2

0.1

00.40.20-0.2-0.4

0.4

μ0Hc= 0.08 T

H-dependence

T = 0.02 K

K. Ueno et al., Nat. Mater. 7, 855 (2008)

Electric field-induced superconductivity in SrTiO3


Ionic Liquid

Polymer Electrolyte

d ~ size of solvent molecule

Solvent + Salt

-

+-

++

-

--

+

d ~ size of cation moleculesmaller than electrolyte

Melt at RT

Two kinds of ionic conductors

-+ + + + + + +

-+

- - ---+ + + +

+ ++ -

- +++ - +-+ - +- +- + +-


0 0.5 1 1.5 2 2.5 3 3.5

Carrier density from Hall effectusing Ionic Liquid

Ionic Liquid/ZnO

Electrolyte/ZnO [1]

Shee

t car

rier d

ensi

ty (1

014 c

m-2

)

1

2

3

4

Electrolyte/STO[2]

[2] K. Ueno et al., Nat. Mater. 7, 855 (2008)

[1] H. Shimotani et.al.,APL. 91,082106 (2007)

0

Gate voltage (V)

Hongtao Yuan et al., Adv. Funct. Mater. 19, 1046 (2009)


Ionic conductor

Electronic conductor

Summary非平衡固液界面 + 電界誘起超伝導

Challenge: Increase TcDiscover new superconductors

Multidisciplinary materials science in non- equilibrium states at solid-liquid interfaces

非平衡固液界面の電子物性 - photon factorypfimr electric double layer transistor...

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