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EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: [email protected]

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Page 1: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

EE 201A(Starting 2005, called EE 201B)

Modeling and Optimization for VLSI Layout

Instructor: Lei He

Email: [email protected]

Page 2: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Chapter 7 Interconnect Delay

7.1 Elmore Delay

7.2 High-order model and moment matching

7.3 Stage delay calculation

Page 3: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Basic Circuit Analysis Techniques

• Output response

• Basic waveforms– Step input

– Pulse input

– Impulse Input

• Use simple input waveforms to understand the impact of network design

Network structures & state

Input waveform & zero-states

Natural response vN(t)(zero-input response)

Forced response vF(t)(zero-state response)

For linear circuits: )()()( tvtvtv FN

Page 4: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

unit step function

u(t)=0

1

0t

0t

1

pulse function of width T

0

1/T

-T/2 T/2

)

2()

2(

1)(

Ttu

Ttu

TtPT

unit impulse function

1)(

0any for s.t.

0for singular

0for 0)(

0when )( : )(

dtt

t

tt

TtPt T

dt

tduδ(t)

dxxtut

)(or

)()(

definitionBy

Basic Input Waveforms

Page 5: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

• Definitions:– (unit) step input u(t) (unit) step response g(t)– (unit) impulse input (t) (unit) impulse response h(t)

• Relationship

• Elmore delay

ttdxxhtgdxxtu

dt

tdgth

dt

tdut

0)()()()(

)()(

)()(

Step Response vs. Impulse Response

(Input Waveform) (Output Waveform)

0 0

)()(' dttthdtttgTD

Page 6: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Analysis of Simple RC Circuit

)()()(

)())(()(

)()()(

tvtvdt

tdvRC

dt

tdvC

dt

tCvdti

tvtvtiR

T

T

first-order linear differentialequation with

constant coefficients

state variable

Inputwaveform

±v(t)C

R

vT(t)

i(t)

Page 7: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Analysis of Simple RC Circuit

0)()(

tvdt

tdvRCzero-input response:

(natural response)

step-input response:

match initial state:

output responsefor step-input:

v0

v0u(t)

v0(1-eRC/T)u(t)

RCt

N Ke(t)vRCdt

dv(t)

v(t)

11

)()()(

0 tuvtvdt

tdvRC

)()()()( 00 tuvKetvtuvtv RCt

F

)()1()( 0 tuevtv RCt

0)( 0)0( 0 tuvKv

Page 8: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Delays of Simple RC Circuit

• v(t) = v0(1 - e-t/RC) under step input v0u(t)

• v(t)=0.9v0 t = 2.3RCv(t)=0.5v0 t = 0.7RC

• Commonly used metricTD = RC (Elmore delay to be defined

later)

Page 9: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Lumped Capacitance Delay Model

• R = driver resistance• C = total interconnect capacitance + loading capacitance

• Sink Delay: td = R·C

• 50% delay under step input = 0.7RC• Valid when driver resistance >> interconnect resistance• All sinks have equal delay

driver

3N

2N

N

Rd

Cload

Page 10: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

g0d

gintdloaddD

CLCR

CCRCRt

driver

3N

2N

N

Lumped RC Delay Model

• Minimize delay minimize wire length

Rd

Cload

Page 11: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Delay of Distributed RC Lines

......!4!2

1

2)cosh(

cosh

1)(

42

xx

eex

sRCssV

xx

out

Vout(t) Vout(s)Laplace

Transform

RVIN VOUT

C

VOUTVIN

R

C

0.5

1.0

VOUT

DISTRIBUTED

LUMPED

1.0RC 2.0RC time

Step response of distributed and lumped RC networks.A potential step is applied at VIN, and the resulting VOUT

is plotted. The time delays between commonly usedreference points in the output potential is also tabulated.

Page 12: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Delay of Distributed RC Lines (cont’d)

Output potential range Time elapsed(Distributed RC

Network)

Time elapsed(Lumped RC

Network)

0 to 90% 1.0 RC 2.3 RC

10% to 90% (rise time) 0.9 RC 2.2 RC

0 to 63% 0.5 RC 1.0 RC

0 to 50% (delay) 0.4 RC 0.7 RC

0 to 10% 0.1 RC 0.1 RC

Page 13: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Distributed Interconnect Models

• Distributed RC circuit model– L,T or circuits

• Distributed RCL circuit model

• Tree of transmission lines

Page 14: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Distributed RC Circuit Models

Page 15: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

0Z

0Z

Distributed RLC Circuit Model (without mutual inductance)

Page 16: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Delays of Complex Circuits under Unit Step Input

• Circuits with monotonic response

• Easy to define delay & rise/fall time• Commonly used definitions

– Delay T50% = time to reach half-value, v(T50%) = 0.5Vdd

– Rise/fall time TR = 1/v’(T50%) where v’(t): rate of change of v(t) w.r.t. t

– Or rise time = time from 10% to 90% of final value

• Problem: lack of general analytical formula for T50% & TR!

t

1

0.5v(t)T50%

TR

Page 17: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

t

Delays of Complex Circuits under Unit Step Input (cont’d)

• Circuits with non-monotonic response

• Much more difficult to define delay & rise/fall time

Page 18: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

)( of change of rate : )('

(monotone) responseoutput : )(

tvtv

tv

0.5

1

T50%

v(t)

t

t

v’(t)

medianof v’(t)(T50%) v'(t)

dtttvTD

ofmean

)('0

Elmore Delay for Monotonic Responses

• Assumptions:– Unit step input – Monotone output response

• Basic idea: use of mean of v’(t) to approximate median of v’(t)

Page 19: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

• T50%: median of v’(t), since

• Elmore delay TD = mean of v’(t)

def.)(by )( of valuefinal of half

)(')('%50

%500

tv

dttvdttvT

T

0

)(' tdttvTD

Elmore Delay for Monotonic Responses

Page 20: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Why Elmore Delay?

• Elmore delay is easier to compute analytically in most cases– Elmore’s insight [Elmore, J. App. Phy 1948]– Verified later on by many other researchers, e.g.

• Elmore delay for RC trees [Penfield-Rubinstein, DAC’81]• Elmore delay for RC networks with ramp input [Chan, T-

CAS’86]• .....

• For RC trees: [Krauter-Tatuianu-Willis-Pileggi, DAC’95]T50% TD

• Note: Elmore delay is not 50% value delay in general!

Page 21: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Elmore Delay for RC Trees

• Definition– h(t) = impulse response

– TD = mean of h(t)

=

• Interpretation– H(t) = output response (step process)– h(t) = rate of change of H(t)

– T50%= median of h(t)

– Elmore delay approximates the median of h(t) by the mean of h(t)

0

dtt h(t)

medianof v’(t)(T50%) v'(t)

dtttvTD

ofmean

)('0

h(t) = impulse response

H(t) = step response

Page 22: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Elmore Delay of a RC Tree[Rubinstein-Penfield-Horowitz, T-CAD’83]

ion!contradict 0)('

at capacitor thecharge currents all Since

resistors via connects & )()( Since

at 0 is to nodeany fromcurrent theThen,

at )( achieve nodeLet

0)(' s.t. Then,

0)( that Assume

0)0(

at nodeany of voltagemin. thebe )(Let

nodeevery at 0)( response impulse

))()('( nodeevery at 0)('

in tree nodeevery for in monotonic is )(

treeRC a toapplied isinput step awhen

1min

minmin

min1min1

1min

11minmin

1min01

0min

min

min

th

iii

iithth

tii

tthi

thtt

th

h

tth

ith

thtivitv

ittv

i

i

ii

i

Lemma:

Proof:

Apply impulse func. at t=0:

imin

i

current iimin

Page 23: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Elmore Delay in a RC Tree (cont’d)

00

000

i

))(1()1)((lim])()([lim

)(|)()('

)()(

) and between res.path (common ) cap o(current t

)in scap' all current to(on drop voltageThe)(1

)( node of cap. current to The

node delay to Elmore

& input to from

pathcommon of resistance:

at rooted subtree: ; node input to frompath :

dttvTTvdttvTTv

dttvttvdtttvT

dt

tdvCRR

dt

tdvC

PPk

SRPtvdt

tdvCi

CRT

i

kjPP

R

isiP

iiT

T

iiT

iiiD

k

kkkiki

k

kk

kki

Pkikii

i

kkkiD

kj

jk

ii

i

i

i

input

i

k

jSi

path resistance Rii

Rjk

Theorem :

Proof :

Page 24: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Elmore Delay in a RC Tree (cont’d)• We shall show later on that

i.e. 1-vi(T) goes to 0 at a much faster rate than 1/T when T

• Let

0))(1(lim

TTviT

)(

)](1[))(1(lim

)(

)](1[

)(

)()(

)](1[)(

0

0

0

kkkii

iiT

D

kkkii

k kkkkikki

kkkki

t

k

kkkii

t

ii

CRf

dttvTTvT

CRf

tvCRCR

tvCR

dxdx

xdvCRtf

dxxvtf

i

(1)

vi(t)

1

0 t

area t

ii dxxvtf0

)](1[)(

Page 25: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

) & (since Then,

)(

Recall Let

2

kiiikikkpDR

iik

kkiR

kkkiD

kkkkp

RRRRTTT

RCRT

CRTCRT

ii

i

i

Some Definitions For Signal Bound Computation

Page 26: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Signal Bounds in RC Trees

• Theorem

ii

iRiR

iRiD

i

i

i

pp

Rip

i

ii

i

RD

Tt

TTT

p

R

i

p

D

RpT

tT

TT

p

D

RDRi

Di

TTteeT

T

tv

tT

tT

TTteeT

T

TTttTt

Ttv

t

)(

)(

1

)(

0 1

bounds Upper

1

) when trivial-(non 0 1 )(

0 0

bounds Lower

Page 27: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Delay Bounds in RC Trees

p

Di

ip

DipRp

Ri

D

p

Ri

ip

RRRD

ip

T

Ttv

tvT

TTTTt

Ttv

Tt

T

Ttv

tvT

TTTTt

tvTTt

i

i

i

i

ii

iii

1)( when )(1

ln

)(1

:boundsUpper

1)(hen w)(1

ln

)(1

:boundsLower

iD

Page 28: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Computation of Elmore Delay & Delay Bounds in RC Trees

• Let C(Tk) be total capacitance of subtree rooted at k

• Elmore delay

fashion

up-bottom ain y recursivel elinear timin computed becan formula threeall *

:boundlower

)(

:boundupper

)(

2

k ii

kkiR

kkkp

pkkkD

R

CRT

TCRT

TCRT

i

i

i

Page 29: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Comments on Elmore Delay Model

• Advantages– Simple closed-form expression

• Useful for interconnect optimization

– Upper bound of 50% delay [Gupta et al., DAC’95, TCAD’97]• Actual delay asymptotically approaches Elmore delay as input

signal rise time increases

– High fidelity [Boese et al., ICCD’93],[Cong-He, TODAES’96]• Good solutions under Elmore delay are good solutions under

actual (SPICE) delay

Page 30: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Comments on Elmore Delay Model

• Disadvantages– Low accuracy, especially poor for slope computation– Inherently cannot handle inductance effect

• Elmore delay is first moment of impulse response

• Need higher order moments

Page 31: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Chapter 7.2 Higher-order Delay Model

Page 32: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Time Moments of Impulse Response h(t)

• Definition of moments

)()( sHth L

dttthsi

dtsti

thdtethsH

i

i

i

i

ist

00

00

0

)()(!

1

)(!

1)()()(

i-th moment dttthi

m iii

0)()1(

!

1

• Note that m1 = Elmore delay when h(t) is monotone voltage response of impulse input

Page 33: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Pade Approximation

• H(s) can be modeled by Pade approximation of type (p/q):

– where q < p << N

1)(ˆ

1

01,

sasa

bsbsbsH

qq

pp

qp

• Or modeled by q-th Pade approximation (q << N):

q

j j

jqqq ps

ksHsH

1,1 )(ˆ)(ˆ

• Formulate 2q constraints by matching 2q moments to compute ki’s & pi’s

Page 34: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

General Moment Matching Technique

• Basic idea: match the moments m-(2q-r), …, m-1, m0, m1, …, mr-1

(i) initial condition matches, i.e.

)ˆ(or

)(lim)(ˆlimor ),0()0(ˆ

11

s

mm

ssHsHshhs

(ii) 22,,1,0for ˆ qkmm kk

)(ˆ of moments sH

q

q

ps

k

ps

k

ps

ksH

2

2

1

1)(ˆ

)(ˆˆˆ 1110

rrr ssmsmm

• When r = 2q-1:

Page 35: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Compute Residues & Poles

j

j ii

i

i

ii

i

i

p

s

p

k

ps

pk

ps

k)(

1 0

2212122

212

1

1

1222

221

1

02

2

1

1

121

)(

)(

)(

)0(

qqq

q

qq

q

q

q

q

q

mp

k

p

k

p

k

mp

k

p

k

p

k

mp

k

p

k

p

k

mhkkk

condition initial

))(ˆlim( sHss

match first 2q-1 momentsEQ1

Page 36: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Basic Steps for Moment Matching

Step 1: Compute 2q moments m-1, m0, m1, …, m(2q-2) of H(s)

Step 2: Solve 2q non-linear equations of EQ1 to get

residues :,,,

poles :,,,

21

21

q

q

kkk

ppp

Step 3: Get approximate waveform

Step 4: Increase q and repeat 1-4, if necessary, for better accuracy

tpq

tptp qekekekth 2121)(ˆ

Page 37: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Components of Moment Matching Model

• Moment computation– Iterative DC analysis on transformed equivalent DC circuit

– Recursive computation based on tree traversal

– Incremental moment computation

• Moment matching methods– Asymptotic Waveform Evaluation (AWE) [Pillage-Rohrer, TCAD’90]

– 2-pole method [Horowitz, 1984] [Gao-Zhou, ISCAS’93]...

• Moment calculation will be provided as an OPTIONAL reading

Page 38: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Chapter 7 Interconnect Delay

7.1 Elmore Delay

7.2 High-order model and moment matching

7.3 Stage delay calculation

Page 39: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Stage Delay

A B C

Source Interconnect Load

)(),( LTLITT BCABAC

delay Transitiondelayn Propagatio:)(

ctinterconne delay with Gate:),(

ctinterconneout delay with Gate:),0(

LT

LIT

LT

BC

AB

AB

)(),0(),( LTLTLITT BCABABctInterconne

Page 40: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Modeling of Capacitive Load

• First-order approximation: the driver sees the total capacitance of wires and sinks

• Problem: Ignore shielding effect of resistance pessimistic approximation as driving point admittance

• Transform interconnect circuit into a -model [O’Brian-Savarino, ICCAD’89]– Problem: cannot be easily used with most device

models

• Compute effective capacitance from -model [Qian-Pullela-Pileggi, TCAD’94]

Page 41: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

-Model[O’Brian-Savarino, ICCAD’89]

• Moment matching again!• Consider the first three moments of driving point

admittance (moments of response current caused by an applied unit impulse)

• Current in the downstream of node k

1

1)(2)2()1( )1(

)()(

)(/)()(

)()(

i Tj

iijjjj

Tjj

jTj

jk

inkk

jTj

jk

kk

k

k

smCsmsmsC

ssHCsY

sVsIsY

ssVCsI

Page 42: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Driving-Point Admittance Approximations

• Driving-point admittance = Sum of voltage moment-weighted subtree capacitance

• Approximation of the driving point admittance at the driver

i

i

ikk

Tj

ijj

ik

sysY

mCyk

1

)(

)1()(

)(

)(sY

General RC Tree:lumped RC elements,distributed RC lines

Page 43: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Driving-Point Admittance Approximations

• First order approximation: y(1) = sum of subtree capacitance

• Second order approximation: yk(2) = sum of subtree

capacitance weighted by Elmore delay

)1(yC

)1(yC

2)1()2( )/(yyR

)()1( sY

)()2( sY

Page 44: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Third Order Approximation: Model

21)1( CCy

R

1C2C

)()3( sY

21

)2( RCy

31

2)3( CRy

)3(

2)2(

1

)(

y

yC

1)1(

2 CyC

21

)2(

C

yR

Page 45: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Current Moment Computation

• Similar to the voltage moment computation• Iterative tree traversal:

– O(n) run-time, O(n) storage

• Bottom-up tree traversal:– O(n) run-time– Can achieve O(k) storage if we impose order of traversal,

k = max degree of a node– O’Brian and Savarino used bottom-up tree traversal

Page 46: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

pwm

1pTv

C

pvm

Bottom-Up Moment Computation

• Maintain transfer function Hv~w(s) for sink w in subtree Tv, and moment-weighted capacitance of subtree:

• As we merge subtrees, compute new transfer function Hu~v(s) and weighted capacitance recursively:

u

vvv CLR ,,

v

w

up

um 1pTu

C

• New transfer function for node w

10for ,0for pjCpjm jT

jw v

pjCLCRm

CmCmC

jTv

jTv

jv

qT

j

q

qjvv

jv

jT

vv

vv

1for )(

,

21

1

0

111

pjmmmj

q

qw

qjv

jw 0for

0

pwm

pvm

1pTv

C

• New moment-weighted capacitance of Tu:

10for )(

pjCCuchildv

jT

jT vu

)()()( ~~~ sHsHsH wvvuwu

Page 47: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Current Moment Computation Rule #1

Cyy DU )1()1()(sYU

)(sYD )2()2(DU yy

)3()3(DU yy

C

Page 48: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Current Moment Computation Rule #2

)1()1(DU yy

)(sYU

)(sYD

2)1()2()2( )( DDU yRyy 3)1(2)2()1()3()3( )())((2 DDDDU yRyyRyy

R

Page 49: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Current Moment Computation Rule #3

Cyy DU )1()1(

)(sYU

)(sYD

2)1(2)1()2()2(

3

1)()( CyCyRyy DDDU

3)1(22)1(3)1(2

)2()2()1()3()3(

15

2)(

3

2)(

3

4)(

)())((2

CyCyCyR

yCyyRyy

DDD

DDDDU

R

C

Page 50: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Current Moment Computation Rule #4(Merging of Sub-trees)

B

iDiU

B

iDiU

B

iDiU

yy

yy

yy

1

)3()3(

1

)2()2(

1

)1()1(

)(sYU

)(1 sYD

)(sYDB

B Branches

Page 51: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Example: Uniform Distributed RC Segment

Purely capacitive

Wide metal (distributive)

Narrow metal (distributive)

Narrow metal (lumped RC)

Wide metal (lumped RC)

Wide metal ()

Narrow metal ()

Cload/Cmax

TAB/TAB(0)

Page 52: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Why Effective Capacitance Model?

• The -model is incompatible with existing empirical device models– Mapping of 4D empirical data is not practical from a storage

or run-time point of view

• Convert from a -model to an effective capacitance model for compatibility

• Equate the average current in the -load and the Ceff load

R

1C2C effCin in

Page 53: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Equating Average Currents

R

1C2C effCin in

I CI

)()(

)()()(

)(1

)(1

00

sVsCsI

sVsYsI

dttIt

dttIt

outeffC

out

t

CD

t

D

DD

tD = time taken to reach 50% point, not 50% point of input to 50% point of output

Page 54: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Waveform Approximation for Vout(t)

Dxx

xiout

tttttba

ttctVtV

)(

0)(

2

2xi ctVa

xctb 2

• Quadratic from initial voltage (Vi = VDD for falling waveform) to 20% point, linear to the 50% point

• Voltage waveform and first derivative are continuous at tx

Page 55: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Average Currents in Capacitors

]2

[2

)2()2(1

)(0

xD

D

xeff

t

t xeff

t

effD

C

tt

t

tcC

dtctCdtctCt

tID

x

x

]2

[2

)( 22

xD

D

xC

tt

t

tcCtI

• Average current of C1 is not quite as simple:

– Current due to quadratic current in C2

– Current due to linear current in C2

Page 56: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

• Average current for (0,tx) in C2

• Average current for (tx,tD) in C2

• Average current for (0,tD) in C2

Average Currents in C1

1

11)(

2

2)( 2

11

21 RC

t

xx

xC

x

eRCtRCt

t

cCtI

1

11

1

)(

11

)(

211

1

112

11)(22)(

RC

tt

xDx

RC

tt

RC

t

xxD

C

xD

xDx

ett

RCCct

eeRCtRCtt

cCtI

11

1

)(

211

21 )(

2

2)( RC

t

RC

tt

xDxx

DC

DxD

eeRCRCtttt

t

cCtI

Page 57: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Computation of Effective Capacitance

• Equating average currents

• Problem: tD and tx are not known a priori

• Solution: iterative computation– Set the load capacitance equal to total capacitance

– Use table-lookup or K-factor equations to obtain tD and tx

– Equate average currents and calculate effective capacitance– Set load capacitance equal to effective capacitance and iterate

11

)(

2

21

2

112 )(

)(1 RC

t

RC

tt

tDx

tD

eff

DxD

xxee

tt

RC

t

RCCCC

2/

2/

Dx

indD

tt

tt

Page 58: EE 201A (Starting 2005, called EE 201B) Modeling and Optimization for VLSI Layout Instructor: Lei He Email: LHE@ee.ucla.edu

Stage Delay Computation

• Calculate output waveform at gate– Using Ceff model to model interconnect

• Use the output waveform at gate as the input waveform for interconnect tree load

• Apply interconnect reduced-order modeling technique to obtain output waveform at receiver pins