ece 695: processing plasma: etching jk lee (spring, 2006)
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ECE 695: Processing Plasma: Etching
JK LEE (Spring, 2006)
IEDF Affects Contact Process• Etch stop
• High polymerization with low energy ions
• Ion shading effect, large ion angular dist.
•Bowing – Ion specular reflection
•High polymerization and large Ion energy
•Ion shading effect, some ion angular dist.
• Straight profile
• Low pressure, collisionless sheath
• Optimum polymerization with medium ion energy
• Vertical mask profile, less ion specular reflection
• Low ion shading effect, small ion angular dist.
Profile Control – IEDF and Polymer
• 1D PIC code – 3 years in development with POSTECH/Lam
• Bulk plasma and polymerization assumption
• Can be linked to 2D/3D profile simulators
• 2D/3D Profile Simulators
• Ion flux and density from bulk simulator
• Can be used to predict contact profiles
Plasma ApplicationModeling, POSTECH
Speed Function (Compared)
1F k 1F
Plasma ApplicationModeling, POSTECH
Speed Function (Mask Pattern)
Plasma ApplicationModeling, POSTECH
Speed Function (Depending On The Particle Flux)
Plasma ApplicationModeling, POSTECH
Speed Function (Depending On The Particle Flux)
2005. 3. 10
SimulationSimulation 을 이용한을 이용한 Plasma Plasma 특성연구특성연구
H.S. Ko and J.K. Lee Department of Electronic and Electrical Engineering,
POSTECH
( Comparison of Plasma Kinetic Properties of Various Equipments )( Comparison of Plasma Kinetic Properties of Various Equipments )
SCCM-TE (TEL) Exelan-CFE (Lam) Enalber (AMT)
D92 SAC Etcher D92 SiN mask Etcher -
▶ Dual-CCP 4.5cm, 30mT▶ Uniformity : - Dual cathode - Dual gas feed
▶ Narrow Dual-CCP : 2.0cm, 40mT▶ PR Selectivity : Heated top electrode▶ Uniformity : Dual gas feed
▶ VHF Dual-CCP : Very High Freq. 3.2cm, 30mT▶ High E/R & PR Sel. : Very High frequency▶ Uniformity : - CSTU : Vertical B-Field - NSTU : Dual gas feed
~
~ 60MHz
2MHz ~ 13.56MHz
~162MHz
Specification of EquipmentsSpecification of Equipments
ApplicationApplication Plasma Plasma Modeling Modeling
0 10 20 30 40 50 60 70 80
0
100
200
300
400
500
600
700
800
TEL_60MHz_4.5cm (SEEC=E,A dependence)
Bre
akd
ow
n V
olt
age,
VB
r
Pressure,mTorr
0 10 20 30 40 500
20
40
60
80
100
120
140
160
180
200
2MHz(0V) 2MHz(145V) 2MHz(400V) 2MHz(720V)
Paschen Breakdown Voltage Curve
0 10 20 30 40 50 60 70 80
0
100
200
300
400
500
600
700
800
900
1000
Pressure,mTorr
Bre
akd
ow
n V
olt
ag
e, V B
r
AMT_162MHz (3.2cm) TEL_60MHz (4.5cm) Lam_27MHz (2cm)
0 10 20 30 40 50 60 700
100
200
300
400
500
600
700
800
900
1000
Lam_27MHz_2cm (SEEC=E.A dependence)
Bre
akd
ow
n V
olt
ag
e, V
Br
Pressure,mTorr
2MHz(0V) 2MHz(145V) 2MHz(400V) 2MHz(720V)
0 10 20 30 40 50 60 70 80
0
100
200
300
400
500
600
700
800
AMT_162MHz_3.2cm (SEEC=E,A dependence)
Pressure,mTorr
Bre
akd
ow
n V
olt
age,
VB
r
0 10 20 30 40 50
0
20
40
60
80
100
120
140
160
180
200
13.56MHz(0V) 13.56MHz(50V) 13.56MHz(150V) 13.56MHz(300V)