dy294 en v5b - banggood
TRANSCRIPT
NPN
Tested parameter Connecting method
Vce (Sat) C
B
E
Diode
Forward voltage
drop E
B
C
PNP
Tested parameter Connecting method
Vce (Sat)
E
B
C
Diode
Forward voltage
drop
C
B
E
3A
6A
1 2 3
4
5
678
OFF2kV200V
2A(Ic)
2kV200V
2A(Ic)
VV BRBR
800mA(Ic) 800mA(Ic)
100mA(Ic) 100mA(Ic)
10mA(Ic)10mA(Ic)
10mA(Ib) 10mA(Ib)
1mA(Ib)
10uA(Ib)I
79xx OFF 78xxI
10uA(Ib)
1mA(Ib)
CEOCEO
V VCE(sat) CE(sat)
FE FE
TESTHV
HOLD
C
E B
B C E B C C+ C-
DC6V
PNP NPN
Transistor Tester 294
3 2 1
h h
(2000uA) (2000uA)
Parameter Measuring
range
Display Resolution Operating condition
1000V 0~1000 1V Breakdown current less
than 1mAV (BR)
Breakdown voltage 200V 0~199.9 0.1V Breakdown current less
than 1mA
2A (Ic) 0~6.00 0.01V Ic approx.2000mA
Ib approx. 200mA
800mA (Ic) 0~6.00 0.01V Ic approx. 800mA
Ib approx. 80mA
100mA (Ic) 0~6.00 0.01V Ic approx.100mA
Ib approx. 10mA
Vce (sat)
Collector-emitter
saturation voltage drop
10mA (Ic) 0~6.00 0.01V Ic approx. 10mA
Ib approx. 1mA
10mA (Ib) 0~199.9 0.1 Ib approx. 10mA
1mA (Ib) 0~1999 1 Ib approx. 1mA
hFE
DC Current Gain
10uA (Ib) 0~1999 1 Ib approx. 0.01mA
Iceo
Reverse leakage current
2000μA 0~1999 1μ A Testing voltage approx.
27V
78 or 79 three-terminal
voltage regulator
78xx/79xx 0~24.0 0.1V Testing voltage approx.
27V
NPN
Parameter Connecting method
ICEO C
B
E
ICBO C
B
E
IEBO C
B
E
Diode
reverse Iceo
C
B
E
PNP
Parameter Connecting method
ICEO
E
B
C
ICBO
E
B
C
IEBO
E
B
C
Diode
reverse Iceo
E
B
C
PNP
Parameter Connecting method
hFE
E
B
C
NPN
Parameter Connecting method
hFE C
B
E
3A
3A
NPN
Prameter Connecting method
BVCBO C
B
E
BVEBO
E
B
C
BVCEO
E
B
C
BVCES C
B
E
Diode
Reverse breakdown
voltage
C
B
E
zener diode
zener voltage
C
B
E
light emitting diode
forward voltage
drop E
B
C
light emitting diode
reverse voltageE
B
C
Bidirectional
controlled silicon
Breakdown voltage
C
B
E
unidirectional
controlled silicon
Breakdown voltage
C
B
E
N-MOS transistor
Withstand voltage
test E
B
C
porcelain capacitor
terylene capacitor
mica capacitor
monolithic
capacitor
Withstand voltage
test
C
B
E
Varistor
operating voltageE
B
C
PNP
Parameter Connecting method
BVCBO
E
B
C
BVEBO C
B
E
BVCEO C
B
E
BVCES
E
B
C
Diode
reverse breakdown voltageE
B
C
zener diode
zener voltageE
B
C
light emitting diode
forward voltage drop
C
B
E
light emitting diode
reverse voltage
C
B
E
Bidirectional controlled
silicon
Breakdown voltage E
B
C
unidirectional controlled
silicon
Breakdown voltage E
B
C
P-MOS transistor
Withstand voltage test
C
B
E
porcelain capacitor
terylene capacitor
mica capacitor
monolithic capacitor
Withstand voltage test
E
B
C
Varistor
operating voltageE
B
C
NPN
Prameter Connecting method
BVCBO C
B
E
BVEBO
E
B
C
BVCEO
E
B
C
BVCES C
B
E
Diode
Reverse breakdown
voltage
C
B
E
zener diode
zener voltage
C
B
E
light emitting diode
forward voltage
drop E
B
C
light emitting diode
reverse voltageE
B
C
Bidirectional
controlled silicon
Breakdown voltage
C
B
E
unidirectional
controlled silicon
Breakdown voltage
C
B
E
N-MOS transistor
Withstand voltage
test E
B
C
porcelain capacitor
terylene capacitor
mica capacitor
monolithic
capacitor
Withstand voltage
test
C
B
E
Varistor
operating voltageE
B
C
PNP
Parameter Connecting method
BVCBO
E
B
C
BVEBO C
B
E
BVCEO C
B
E
BVCES
E
B
C
Diode
reverse breakdown voltageE
B
C
zener diode
zener voltageE
B
C
light emitting diode
forward voltage drop
C
B
E
light emitting diode
reverse voltage
C
B
E
Bidirectional controlled
silicon
Breakdown voltage E
B
C
unidirectional controlled
silicon
Breakdown voltage E
B
C
P-MOS transistor
Withstand voltage test
C
B
E
porcelain capacitor
terylene capacitor
mica capacitor
monolithic capacitor
Withstand voltage test
E
B
C
Varistor
operating voltageE
B
C