• Fast3Dstructureprototypingcapabilityenablesthein-depthphysicalanalysisofspecificprocessingissues
• Comprehensivesetofdiffusionmodels:Fermi,fullcpl,single-pair,andfive-stream
• Physicaloxidationsimulationwithstressanalysis
• ExtremelyaccurateandfastMonteCarloimplantsimulation
• Efficientmulti-threadingoftimecriticaloperationsofMonteCarloimplantation,diffusion,oxidation,andphysicaletchinganddeposition
• Sophisticatedmulti-particlefluxmodelsforphysicaldepositionandetchingwithsubstratematerialredeposition
• Openarchitectureallowseasyintroductionandmodificationofcustomerspecificphysicalmodels
• Seamlesslinkto3Ddevicesimulatorsincludingstructuremirroring,adaptivedopingrefinementandelectrodespecification
• Easytolearn,powerfuldebugmodeanduserfriendlySUPREM-likesyntax
•Athenacompatibility
• Convenientcalibrationplatformandfastprocesstesting(noneedtorun3Dforcalibration)whenusingin2Dmode
• Automaticswitchingfrom1D,2Dand3Dmode
Victory Process is a general purpose layout driven 1D, 2D and 3D process simulator including etching and deposition, implantation, diffusion and oxidation simulation capabilities. Proprietary models, as well as public domain research models can be integrated into Victory Process using the open modeling interface.
Victory Process
3D Process Simulator
VictoryProcesshastwomodesofoperation:• TheAdvancedstructureeditor mode, also called cell mode, is for fast proto-typing of 3D structures, such as image sensors, SRAM cellsorFinFETs,wherestructureoutputmeshingalgorithmsareoptimizedforloadinginto3Ddevicesimulatorsforsubsequentelectricalcharacterization.
• Processsimulatormode, is a full feature, level set based 1D, 2D and 3D process simulator, more suited to process based analysis, such as complex ion beam milling experiments and stress dependent oxidation analysis etc.
Thisbrochurefirstshowsexamplesandfeaturesthatarecommontobothmodesofoperation,suchimplantationanddiffusion,andthendescribes features that are exclusive only to the advanced structure editor or to the advanced process simulator.
Features Common to Advanced Structure Editor and Process Simulator Modes
AnalyticalIonImplantation
• ExperimentallyverifiedPearsonanddualPearsonimplantmodels• Extendedimplantmomentstableswithenergy,dose,tilt,androtationvariations• Accountsformulti-layerimplantmomentsscaling• FullycompatiblewithAthena/SSuprem4
MonteCarloImplantation
• Veryaccurateiondistributionsinbothcrystallineandamorphousmaterialsformingarbitrarygeometriesand multi-layer structures
• Accuratelycalibratedforwiderangeofenergiesstartingaslowas200eVandspanningtothehighMeVrange
• Accountsforallcompleximplantationeffectssuchasreflections,re-implantationandshadowingevenindeep trenches and voids
• Handlesarbitraryimplantdirectionsandwaferorientations
• Applies3Dbinarycollisionapproximationwhichpredictschannelingnotonlyintoprimarychannelbutinall possible secondary channels and crystallographic planes
• Providestimeefficientandcosteffectivesolutionsforimportanttechnologyissuessuchasshallowjunctionformation,multipleimplantsandpre-amorphization,HALOimplants,retrogradewellformation,and well proximity effect
• Fullymulti-threadedwithruntimereductionalmostlinearlyproportionalwithnumberofCPUs
Implantattilt50degreesandtwistalongstructure’sdiagonal.5 million trajectories can be simulated in a few minutes on an 8
core machine.
Implantattilt50degreesandtwistalongstructure’sdiagonal.Allgeometrical effects are taken into account.
Diffusion • FermidiffusionmodelcompatiblewithAthena/SSuprem4• Fickdiffusionmodelfornon-semiconductormaterials• Simulationofmultipledopantdiffusion• Accountsforsolidsolubility,dopantactivation,andsegregationatmaterialinterfaces• Fullymulti-threadedequationassemblerandlinearsolverprovidesubstantialspeedimprovementon
multi-core computers• Simulationoftransientenhanceddiffusioneffects• Three-streamandfive-streamdiffusionmodels• Pointdefecttrappingandclusteringmodels• Impuritysegregationatallmaterialinterfaces• Impurityactivationandsolidsolubility• DiffusionincompoundsemiconductorslikeInP• Simulationofoxidationmediateddiffusion
Boron distribution in a complex structure after analytical implant and Fermi diffusion. ComparisonofFermiand3-streamdiffusionmodelin the presence of interstitial super-saturation.
OpenModelingInterfaceCapabilities
• Definitionofmodelspecies• Definitionofmodelparameters• Definitionofreactionfunctions• ConfigurationofthePDEsystem
Advanced Structure Editor Mode
FastGeometricalEtchandDeposition
• Unstructuredmeshtorepresentthestructure• Idealizedisotropicetchingandplanarization• Selectiveetchingorremovalofmaterialsregions• Idealizedconformaldeposition• MaskLayout-basedProcessing-JustlikeinaFab• In-deckmaskdefinitionandmanipulation• SupportsGDSIIandMaskViewsmaskformats• Supportsmaskfeaturevariations
3DSolarCellSimulationExample
The3Dprocesssimulationstartsfromamaskandconsistofadepositionandangledetchofanoxidelayerontopofsiliconinordertodefineoxidelenses.Theshapeofthelensescanbeadjustedasafunctionofmasksizeandangleusedduringtheetchinordertooptimizethesolarcellefficiency.
3D Photogeneration isosurface.3D solar cell including lens.
3D solar cell IV curves (dark and under illumination with and without lens) simulated using Victory Device.
Reflection,AbsorptionandTransmission simulation with and without lenses.
FinFETExample 3DFinFETsimulatedincludingquantumcorrectionandenergybalance.
3DFinFETnetdopingdistribution.
IDVGcharacteristics,simulatedusingVictoryDevice,showing the difference when energy balance and
quantumcorrectionareused.
IDVD characteristics, simulated using Victory Device, showing the difference when energy balance and
quantumcorrectionareused.
SiCTrenchIGBTExample
3DtrenchSiCIGBTsimulationshowsa~350Vincreaseinbreakdownvoltageforaroundededgetrenchwhencompared to a sharp edge trench.
Electricfielddistributionina3DIGBT with sharp edge trench.
Electricfielddistributionina3DIGBT with rounded edge trench.
ComparisonusingVictoryDeviceof3DIGBTBV simulation results with sharp and rounded
trench edges.
CMOSImageSensorExample
TCADsimulationofthefullCMOSimagesensorcell,includingtwopasstransistors.
3DNetDopingdistributionina3DCMOSImageSensor.
ComparisonofsensoroutputvoltagesimulationusingVictoryDevice without and under illumination.
Electron concentration calculated using Victory Device during dark recovery time simulation.
CMOSImagesensorlayout.
OxidationModels• Oxidationcanbesimulatedinempirical,fullphysical,orhybridmode• Empiricalmodeisappliedforverythinoxidationlayers• Deal-GroveandMassoudmodelsareusedinempiricalmode• Fullphysicalmodesimulatesoxidanttransport,reactiononSi/SiO2 interface, viscous flow, material
deformation, and stress formation• Automaticswitchingbetweenempiricalandfullphysicalmodedependingonoxidethickness• Empiricalmodeisusedinplanarregionswithcoarsemeshallowinglayerthicknessessmallerthanmeshsizetoberesolved
• Fullphysicalmodeisusedinregionswithfinemesh• Stressdependentoxygentransportandinterfacereaction• Accountsfororientationdependence,dopingdependenceandambientconditions
Process Simulator ModeIn process mode, the structure is represented implicitly, as a stack of material layers “sandwiched” between surfaces, each surface definedimplicitlyonthehierarchyofCartesianmeshes.
STIlineroxidation
Simulation is stable for complex structures (Multi-layer concept).
Withoutstress:localoxidationofaquartersectionofaninvertedpyramid shape using the default linear viscous model.
With stress: non-linear oxidation of the inverted pyramid section taking into account stress dependent reaction and diffusion.
Stress occurs in corner regions. Retardation of the oxide growthduetostressbecomesmoresignificantclosertothe
apex due to the convergence of the corners.
Bufferedfieldoxidation
OpenModelInterfaceCapabilities
IonMilling(IM)andIonBeamDeposition(IBD)
• Staticandrotatingbeams• Selectiveswitchingofrotatingbeamsonandoff• HighlycollimatedanddivergentbeamsforIMandparticlefluxesforIBD• Capabilitytosimulatere-depositoneffects• Configurablematerialspecificyieldfunctionsandre-emissionefficiencies• Accountforshadingeffects• Empiricalyieldmodeltakingintoaccountprocessingconditionslikeionenergy,beamcurrent,ionmass,ioncharge
• Userdefinablemodelsforetchrates,conformity,anisotropy,andstickingcoefficients• Userspecifiedtechnologicalmodels(e.g.,etchrateversusgasflow)• Userdefinablesurfacereactionmodels• Userdefinableparticletransportcharacteristicsthroughfluxmodels• Allmodelsaccountforballistictransport• Automaticselectionoftransportmode• Transportandreactionofmultipleparticles
PhysicalEtch
PhysicalDeposit
Physical Etch and Deposit Module contains a comprehensive set of models covering a wide variety of topology evolution processes used insemiconductorfabricationandinhardcoatingformediaandtribologicalapplications.RuntimesareveryfastonLinuxconfiguredmulti-coresystemsduetoefficientmulti-threading.
• Selectiveetching• Isotropic,anisotropic,anddirectionaletching• Crystalorientationdependentanisotropicetching(e.g.,siliconinKOH)• Plasmaetchingwithmaterialredeposition
• Conformal,non-conformal,anddirectionaldeposition• Sputterdeposition• Ionassistedsputterdeposition
Result of ion milling simulation with redeposition.
Bosch process etch cycle : 7 seconds deposition cycle : 5 seconds 28 cycles have been simulated
HEAdquArtErS
4701 Patrick Henry drive, Bldg. 2
Santa Clara, CA 95054 uSA
Phone: 408-567-1000
Fax: 408-496-6080
JAPAn [email protected]
EurOPE [email protected]
KOrEA [email protected]
tAiwAn [email protected]
SingAPOrE [email protected]
CAliFOrniA [email protected]
408-567-1000
MASSACHuSEttS [email protected]
978-323-7901
tExAS [email protected]
512-418-2929
WWW.SILVACO.COMRev050614_18
Victory ProcessMaskLayout
InputDeck
OpenModelFiles
OpenMaterialDatabase SimulationStatus
Victory Process inputs/Outputs
Run-timeOutput
ExtractionFile
StructureFiles(.str)
28nmMOSFETexample
This example demonstrates 2D process simulation for 28nm NMOS transistor with STI (Shallow TrenchIsolation).ThegoalofthisexampleistodemonstratesgenericcompatibilitywithAthena.
2Dprocesssimulationresultsafter20processstepsincludingetching,deposition,ionimplantationanddiffusion/oxidation.
1D and 2D simulation capabilities are available in process mode. It can now be considered a direct replacement for Athena, with mostly compatiblesyntaxforlegacyinputfileconversion.
1Dand2DMode • VerysimilarsyntaxallowseasymigrationfromAthenaandT-Suprem• Level-setbasedetch,depositandoxidation,improvesstabilityforcomplexstructureshapes• 1D/2Dsimulationallowsquickcalibrationandprocessprototypingbeforefull3Dsimulation• Openmodelinginterfaceandmaterialdatabaseallowcustommodeldevelopmentforstandardandnew
materials and dopants• Seamless link to Atlas and Victory Device• Multi-threading for most time consuming process steps
