Appl. Phys. Lett. 110, 222402 (2017); https://doi.org/10.1063/1.4984221 110, 222402
© 2017 Author(s).
Tuning the magnetoresistance symmetry ofPt on magnetic insulators with temperatureand magnetic dopingCite as: Appl. Phys. Lett. 110, 222402 (2017); https://doi.org/10.1063/1.4984221Submitted: 09 March 2017 . Accepted: 15 May 2017 . Published Online: 30 May 2017
B. F. Miao, L. Sun, D. Wu , C. L. Chien, and H. F. Ding
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Tuning the magnetoresistance symmetry of Pt on magnetic insulatorswith temperature and magnetic doping
B. F. Miao,1 L. Sun,1,2 D. Wu,1,2 C. L. Chien,3 and H. F. Ding1,2,a)
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University,22 Hankou Road, Nanjing 210093, People’s Republic of China2Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road,Nanjing 210093, People’s Republic of China3Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA
(Received 9 March 2017; accepted 15 May 2017; published online 30 May 2017)
We present a comparison study of the temperature dependence of the intriguing magnetoresistance
(MR) in Pt/YIG (yttrium iron garnet), Pt/YIGBB (the YIG substrate has been bombarded with Arþ),
and Pt/SiO2 (with different Fe doping levels). With decreasing temperature, the MRs in Pt/YIG and
Pt/YIGBB change symmetry from Rz¼Rx>Ry at room temperature to Rx>Rz>Ry at low
temperature. A similar behavior in both Pt/YIG and Pt/YIGBB implies that the underlying physics is
due to magnetic scattering, instead of the pure spin current across the interface. By changing the Fe
doping level in the SiO2 substrate, we can further systematically modulate the symmetry of MR in Pt/
SiO2 (Fe doped). The doping level dependent symmetry can also qualitatively explain the controversy
over the MRs of Pt/YIG and similar structures at low temperature. Published by AIP Publishing.[http://dx.doi.org/10.1063/1.4984221]
Heterostructures of heavy metals with strong spin-orbit
coupling on magnetic insulators have been widely studied in
various spin current related phenomena, such as spin Hall
effect,1,2 spin pumping,3,4 spin Seebeck effect,5–7 and spin
transfer torque.8,9 Among these structures, platinum (Pt)/
yttrium iron garnet (YIG) is a typical system, where Pt acts
as the spin current generator/detector, and YIG transports or
produces spin current without accommodating charge cur-
rent.5,7,10–15 Recently, an unconventional magnetoresistance
(MR) has been reported first in Pt/YIG bilayer structures16–19
and subsequently in Pd/YIG,20–22 Ta/YIG,11,23,24 W/YIG,25
and Pt on other magnetic insulators.26–28 Interestingly, the
resistance experienced by electrons passing only through the
non-magnetic films reflects the magnetization orientation of
the underlying insulating substrates, enabling the electronic
detection of the magnetization of the ferromagnetic insula-
tors. The resistance with in-plane field can be described as
R ¼ Rx � DR½m � ðz� jÞ�2, where DR ¼ Rx � Ry, Rx (Ry)
denotes the resistance with the magnetic field along the x-
(y-) axis, m and j are the unit vectors in the directions of
magnetization M and current J, and z is the direction perpen-
dicular to the film plane. This in-plane symmetry is identical
to the well-known anisotropic magnetoresistance (AMR) in
most ferromagnetic metals, with Rx>Ry and a cosine square
angular dependence. However, it exhibits an unconventional
behavior under an out-of-plane magnetic field of Rz¼Rx
>Ry, in sharp contrast to the well-known behavior of Rx
>Ry¼Rz for AMR.
The unconventional MR in Pt/YIG and similar system
has drawn intense interest, both experimentally and theoreti-
cally. While most previous studies focused on the measure-
ments at room temperature, the MR in Pt/YIG and similar
systems at low temperature brings more interesting features.
Lin et al., reported that the MR symmetry of Pd/YIG deviated
from Rz¼Rx>Ry at room temperature to Rx>Rz>Ry at low
temperatures.21 They decompose the MR in Pd/YIG into two
contributions: one from spin Hall magnetoresistance (SMR)
(Rz¼Rx>Ry) and the other from the AMR of the polarized
Pd layer (Rx>Ry¼Rz), which emerges only at low tempera-
tures. A similar explanation is also adopted in the Pt/LaCoO3
structure.28 V�elez et al. observed Rz>Rx>Ry in Pt/YIG at
low temperatures, and they ascribed this to the weak anti-
localization in Pt which would typically enhance the resis-
tance of metal with strong spin-orbit coupling under the per-
pendicular magnetic field.29 However, Shiomi et al., found
that the symmetry of Rz¼Rx>Ry was preserved for Pt/YIG
even at low temperatures.30 Furthermore, weak anti-
localization appears only after special surface treatment of the
YIG surface before the Pt deposition.30 At present, different
symmetries of MR, some without extensive data, have been
reported in supposedly similar structures. Therefore, it is
highly desirable to study the underlying mechanism that mod-
ulates the MR symmetry and explain the controversy between
different observations.
In this work, we present detailed studies of the MRs in Pt
films deposited on YIG, Arþ bombarded YIG (YIGBB) and
Fe-doped SiO2 substrates in a wide temperature range
(10–300 K). We find that the MR symmetry is directly related
to the magnetic scattering at interface. At room temperature,
the MRs in these structures all have the same angular depen-
dence of Rz¼Rx>Ry, and the MR ratios increase with mag-
netic field. The MR of Pt/YIG at low temperature exhibits a
behavior of Rx>Rz>Ry, which is significantly different
from its unique angular dependence observed at room tem-
perature. This phenomenon also persists in a similar system
Pt/YIGBB (the YIG surface was purposely altered by Arþ
beam bombardment before deposition of Pt, see below),
where the spin current has been intentionally blocked anda)Author to whom correspondence should be addressed: [email protected]
0003-6951/2017/110(22)/222402/5/$30.00 Published by AIP Publishing.110, 222402-1
APPLIED PHYSICS LETTERS 110, 222402 (2017)
only magnetic scattering exists. The similar MR symmetry
observed in Pt/YIG and Pt/YIGBB, with or without pure spin
current across the Pt-YIG interface, suggests the importance
of magnetic scattering to the observed intriguing angular
dependence change at different temperatures. By introducing
Fe impurities with different doping levels into the amorphous
SiO2 substrate, we can further systematically tune the sym-
metry of MR in Pt/SiO2(Fe) at low temperature from
Rz>Rx¼Ry (clean SiO2), through Rz>Rx>Ry (low per-
centage Fe doping in SiO2), and reach Rx>Rz>Ry (high per-
centage Fe doping in SiO2). Our finding emphasizes the
importance of magnetic scattering at the interface and quali-
tatively explains the discrepancy over the symmetry of MRs
in Pt/YIG and similar structures among different groups.
We use rf magnetron sputtering to deposit amorphous
SiO2 (with or without Fe dopants) onto thermally oxidized
Si(001) substrates and dc magnetron sputtering to deposit 3-
nm Pt onto polycrystalline YIG slab (SurfaceNet GmbH),
YIGBB, and Fe-doped SiO2 substrates at room temperature.
The thicknesses of all substrates are �0.5 mm. The deposited
thin films have been patterned into 0.2 mm wide Hall bars
with one long segment (5 mm) and three short side bars
1.5 mm apart, as shown in Fig. 1(a). The 4-terminal method
has been used to measure the MR with the current along the
long segment and the voltage obtained from the two adjacent
side bars. In order to access the angular dependence of MR,
we rotate the magnetic field B within the xy-, xz-, and yz-planes with angles /xy, axz, and hyz relative to x-, x-, and z-
axes, respectively, where x-, y-, z-axes are parallel to the
edges of the YIG substrate. For the thermal measurements, a
perpendicular temperature gradient of rzT� 20 K/mm is
established by placing the sample in between and in contact
with two large Cu plates maintained at different constant
temperatures. Under a vertical temperature gradient, the spin
Seebeck effect in YIG drives a pure spin current flow along
the z-direction and can be detected as a thermal voltage Vth
via the ISHE with EISHE / JS � r in the Pt layer,5 where JS
and r are the flow direction of the spin current and spin
index, respectively, with r parallel to the YIG’s magnetiza-
tion direction. The distance between the two voltage leads
for measuring the thermal voltage is around 4.2 mm.
Figure 1(b) presents the field dependence of Rx (black
circle) and Ry (red square) for Pt(3 nm)/YIG with the in-
plane field. The small plateau near the origin is commonly
found in thick YIG substrates.31,32 This MR with a unique
angular dependence with Rz¼Rx>Ry [see also Fig. 2(a)]
has been widely discussed. In Fig. 1(b), the blue triangle
(right scale) shows the thermal voltage Vth for Pt (3 nm)/YIG
under a vertical temperature gradient (rzT� 20 K/mm),
where the field B is applied along the y-axis (/xy¼ 90�). The
measured signal is of �10 lV in magnitude and exhibits an
asymmetric behavior in field, consistent with the symmetry
required for ISHE (EISHE / JS � r).
Before the deposition of the Pt film, we purposely alter
the YIG surface by Arþ beam bombardment. The altered YIG
surface greatly reduces the spin-mixing conductance at the Pt-
YIG interface, thus blocking the spin current transmis-
sion.33–35 Bombardment on the YIG surface for 5 min (500 V,
current density 0.4 mA/cm2) essentially eliminates all spin
current injection. Thus, both the MR ratio (Rx – Ry)/Ry at low
field (100 mT) and thermal voltage Vth disappear [Fig. 1(c)],
which also corroborates that the MR at the low field is corre-
lated with spin current, consistent with the SMR model pro-
posed by Nakayama et al..18,36 The negligible Vth of Pt(3 nm)/
YIGBB [Fig. 1(c) inset] and considerable MR ratio at 1.5 T37
also evidence that the high field MR is not due to pure spin
current. The observed MR was attributed to a combination of
magnetic scattering and spin orbit coupling.38 In particular,
FIG. 1. (a) Schematics for the measurements of the angular dependent mag-
netoresistance and the thermal voltage Vth with temperature gradient along
the z-axis. /xy, axz, and hyz denote the angle between the magnetic fields
with respect to x-, x-, and z-axes within xy-, xz-, and yz-planes, respectively.
(b) Field dependent longitudinal MR Rx (black circles), transverse MR Ry
(red squares), and thermal voltage Vth (blue triangles, right scale) for
Pt(3 nm)/YIG. (c) Field dependent Rx, Ry, and Vth for Pt(3 nm)/YIGBB. The
inset of (c) presents the time evolution of thermal voltage Vth of Pt(3 nm)/
YIGBB under different magnetic fields.
FIG. 2. Angular dependent MR measured within xy-, xz-, and yz-planes with
angles /xy (red square), axz (black circle), and hyz (blue triangle) relative to
x-, x-, and z-axes, for (a) Pt(3 nm)/YIG at 300 K and (b) Pt(3 nm)/YIG at
10 K. (c) and (d) are the angular dependent MR within three planes for
Pt(3 nm)/YIGBB at 300 K and at 10 K, respectively. Both Pt/YIG and Pt/
YIGBB change the MR symmetry from Rz¼Rx>Ry at 300 K to
Rx>Rz>Ry at 10 K. For all the measurements, the magnetic field is fixed at
8.0 T. The inserted arrows represent the scale bars for the MR ratio.
222402-2 Miao et al. Appl. Phys. Lett. 110, 222402 (2017)
the Arþ bombarded YIG surface provides us the advantage to
investigate the MR behavior related to the magnetic scattering
only, since the spin current has been blocked at the interface.
Figure 2(a) presents the angular dependent resistance of
Pt(3 nm)/YIG at room temperature within the xy-, xz-, and
yz-planes with angles /xy (red square), axz (black circle), and
hyz (blue triangle) relative to x-, x-, and z-axes, respectively.
The magnetic field is fixed at 8.0 T which is sufficiently
larger than the demagnetizing field of the YIG substrate.
Rotating B within the xy- and yz-planes gives a cosine square
angular dependence with respect to the x- and y-axes, respec-
tively. The resistance essentially is a constant when the mag-
netic field is rotated within the xz-plane, i.e., Rz¼Rx>Ry.
Although the resistance of Pt(3 nm)/YIGBB is isotropic when
B is less than 100 mT [Fig. 1(c)], the difference among Rx,
Rz, and Ry emerges and increases with increasing B, also
exhibiting Rz¼Rx>Ry [Fig. 2(c)]. In both Pt/YIG and Pt/
YIGBB, MRs follow Rz¼Rx>Ry at room temperature and
have the cosine square angular dependence; while both spin
current and magnetic scattering (together with spin-orbit
coupling) contribute to the MR in Pt/YIG at the high field,
only magnetic scattering is involved in Pt/YIGBB. Pt/YIGBB
is thus a suitable reference system with respect to Pt/YIG for
further investigations, although the detailed reason why the
joint effect of magnetic scattering and spin-orbit coupling
gives the same symmetry to SMR is still elusive.
With decreasing temperature, the MR in Pt(3 nm)/YIG
deviates from its symmetry observed at room temperature
(Rz¼Rx>Ry) and exhibits Rx>Rz>Ry at 10 K [Fig. 2(b)].
As shown in Fig. 2(d), the MRs in Pt(3 nm)/YIGBB exhibit
similar behavior to Pt(3 nm)/YIG at 10 K and have
Rx>Rz>Ry. The similar behavior of MR in Pt/YIG and Pt/
YIGBB, with or without pure spin current across the Pt-YIG
interface, suggests that the magnetic scattering instead of
spin current is the origin of the observed intriguing symme-
try change at different temperatures. Figures 4(a) and 4(b)
summarize the MR ratio DR/R within three different planes
for Pt(3 nm)/YIG and Pt(3 nm)/YIGBB at different tempera-
tures. As the temperature decreases, MR symmetry in both
Pt/YIG and Pt/YIGBB changes from Rz¼Rx>Ry to
Rx>Rz>Ry. In Pt/YIG, both SMR and magnetic scattering
contribute to the observed MR, where the peak behavior of
DRxy in Pt/YIG was explained by the spin Hall magnetoresis-
tance theory with a constant spin Hall angle and temperature
dependent spin diffusion length.39 For the Pt(3 nm)/YIGBB,
only magnetic scattering exhibits and the MR ratios increase
with decreasing temperature to 10 K [Fig. 4(b)].
In order to further demonstrate the importance of magnetic
scattering, we performed the temperature dependent MR study
of Pt on Fe-doped SiO2 with different doping levels. As a con-
trol sample, Pt(3 nm)/SiO2 exhibits isotopic feature when rotat-
ing the magnetic field within 3 different planes at room
temperature, i.e., Rx¼Ry¼Rz [Fig. 3(a)], consistent with the
previous study as pure Pt itself shows no observable fea-
ture.28,40 As temperature decreases, Rz would be enhanced with
magnetic field exhibiting Rz>Rx¼Ry due to weak anti-
localization [Fig. 3(b)], which is commonly observed in non-
magnetic metals with strong spin-orbit coupling.29,30,41–43
Using the magnetron co-sputtering technique, we introduce Fe
impurities into the SiO2 substrate. When the SiO2 is slightly
doped, for instance, SiO2(0.5%Fe), very small angular
dependent MR is observed at room temperature [Fig. 3(c)].
Interestingly, with decreasing temperature, the contribution
from magnetic scattering enhances, and an in-plane MR with
Rx>Ry in Pt(3 nm)/SiO2(0.5%Fe) emerges at 10 K. Mean-
while, the weak anti-localization still dominates, and therefore,
Pt(3 nm)/SiO2(0.5%Fe) exhibits an angular dependence with
Rz>Rx>Ry at 10 K [Fig. 3(d)]. Further increasing the Fe dop-
ing level to 15.3%, sizable MR with Rz¼Rx>Ry appears
under 8.0 T even at room temperature, see Fig. 3(e). This MR,
albeit with the same symmetry of the SMR model, is due to
a interplay of magnetic scattering and strong spin-orbit cou-
pling and is proportional to the Fe impurity in the substrate.38
At low temperature, Rz of Pt(3 nm)/SiO2(15.3%Fe) is further
suppressed compared with Pt(3 nm)/SiO2(0.5%Fe), and the
MR symmetry changes to Rx>Rz>Ry at 10 K [Fig. 3(f)].
Therefore, we demonstrate that the MR symmetry in Pt/
SiO2(Fe doped) can be symmetrically modulated by only tun-
ing the Fe doping level in the SiO2 substrate, highlighting the
importance of magnetic scattering at the interface. Figures 4(c)
and 4(d) summarize the evolution of MR ratio within three dif-
ferent planes obtained at 8.0 T for Pt(3 nm)/SiO2(0.5%Fe) and
Pt(3 nm)/SiO2(15.3%Fe), respectively. The MR ratios increase
with decreasing temperature, which is expected as the magnetic
scattering generally becomes stronger at low temperature. By
summarizing the features of the temperature dependent and the
doping-level dependent MRs, we attribute the peculiar change
of MR symmetry at low temperature to the magnetic scattering
FIG. 3. Angular dependent MR within different planes for (a) Pt(3 nm)/
SiO2 at 300 K, (b) Pt(3 nm)/SiO2 at 10 K, (c) Pt(3 nm)/SiO2(0.5%Fe) at
300 K, (d) Pt(3 nm)/SiO2(0.5%Fe) at 10 K, (e) Pt(3 nm)/SiO2(15.3%Fe) at
300 K, and (f) Pt(3 nm)/SiO2(15.3%Fe) at 10 K. For all the measurements,
the magnetic field is fixed at 8.0 T. With increasing Fe doping level in the
SiO2 substrate, the MR symmetry in Pt/SiO2(Fe doped) can be systemati-
cally modulated.
222402-3 Miao et al. Appl. Phys. Lett. 110, 222402 (2017)
which increases with increasing doping level and decreasing
temperature.
As presented above, Pt/SiO2(15.3%Fe) fully reproduces
MR symmetry as Pt/YIG and Pt/YIGBB at both room temper-
ature and low temperature. Due to the similarity, our findings
can also serve as an explanation for large discrepancy among
different groups for the temperature dependent symmetry of
MR in Pt/YIG and similar systems. For instance, the angular
dependence of Rz>Rx>Ry was reported in Pt/YIG,29 and
Rx>Rz>Ry was found in Pd/YIG21 and Pt/LaCoO328 at low
temperature, respectively; whereas Rz¼Rx>Ry of Pt/YIG
was preserved below room temperature in Ref. 30, and the
authors note that the treatment of the YIG surface is impor-
tant for the experimental observations. For Pt/SiO2, no MR
exists within the xy-plane and the extra enhancement of
Rz in 10 K is due to the weak anti-localization. In Pt/
SiO2(0.5%Fe), where the weak anti-localization still domi-
nates and the magnetic scattering already plays considerable
contribution, it thus exhibits a behavior of Rz>Rx>Ry. This
is similar to the case observed in Ref. 29. In Pt/SiO2(15.3%),
the magnetic scattering dominates and Rz is further sup-
pressed, resulting in a symmetry with Rx>Rz>Ry. This
observed symmetry is similar to the one reported in Refs. 21
and 28. Thus, our findings also qualitatively explain why dif-
ferent angular dependences were observed by different
groups and why the surface treatment was crucial to suppress
weak anti-localization in Ref. 30 since the magnetic scatter-
ing at the interface could be very different with different
preparation methods.
In summary, by tailoring the Pt-YIG interface, we stud-
ied the temperature dependent magnetoresistance in Pt/YIG
with and without Arþ bombardment on the YIG surface in a
wide temperature range. In both cases, the MR exhibits sym-
metry of Rz¼Rx>Ry at room temperature, and switches to
Rx>Rz>Ry at low temperature. The observed similar
behavior in both Pt/YIG and Pt/YIGBB implies that the
underlying physics is due to magnetic scattering, instead of
the pure spin current across the interface. By introducing Fe
impurities in SiO2 substrate, we further demonstrate that
different symmetries can be reproduced in Pt/SiO2(Fe) by
modulating the Fe doping level in the SiO2 substrate only.
Our findings evidence the importance of the magnetic scat-
tering on the temperature dependent MR observed in Pt thin
films on magnetic insulators. In addition, it also qualitatively
explains the discrepancy over the angular dependences of
MR in Pt/YIG and similar systems among different groups.
This work was supported by the National Natural
Science Foundation of China (Grant Nos. 51601087,
51571109, and 11374145) and the Natural Science
Foundation of Jiangsu Province (Grant No. BK20150565).
Work at Johns Hopkins University was supported in part by
Spins and Heat in Nanoscale Electronic Systems, an Energy
Frontier Research Center funded by the U.S. Department of
Energy Basic Energy Science under Award No. SC0012670.
We thank Professor Michel Dyakonov, Professor Weiyi
Zhang, and Professor Jiang Xiao for fruitful discussions.
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