Transcript
Structure and Operation of the MOSFET24 and 26 March 2014
FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA
MOS Inversion Layer
10
- - - - - - - - - - - - +
-
Metal layer
Oxide layer
P-type
+ + + + + + + + + + + + +
n-type inversion layer
With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer
Threshold voltage VT: applied gate voltage required to achieve the threshold inversion
Voltage-Current Relationship of NMOS (1)
13
•
Voltage-Current Relationship of NMOS (1)
20