All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET PART NUMBER: 2SK3301 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) /ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.00
0.10
0.20
0.30
0.40
0.50
0.00 0.10 0.20 0.30 0.40 0.50 0.60
DRAIN CURRENT ID (A)
GF
S (
s)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
0.050 0.143 0.145 1.469
0.100 0.205 0.205 0.098
0.200 0.286 0.291 1.608
0.500 0.427 0.431 0.937
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V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V
I(V3)
1.0mA
10mA
100mA
550mA
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
0
U18
2SK3301
V2
10Vdc
V3
0Vdc
V1
0Vdc
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1
10
100
1000
1 10 100
Gate-Source Voltage - Vgs (V)
Measurement
Simulation
Dra
in C
urr
en
t -
Id (
mA
)
Comparison Graph Circuit Simulation Result
Simulation Result
ID(mA) VGS(V)
Error (%) Measurement Simulation
5.000 3.300 3.448 4.488
10.000 3.450 3.541 2.626
20.000 3.640 3.672 0.865
50.000 3.940 3.933 -0.173
100.000 4.190 4.223 0.776
200.000 4.550 4.638 1.941
500.000 5.200 5.454 4.883
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V_VDS
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V
I(V2)
0A
200mA
400mA
500mA
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= 0.5A, VGS= 10V Measurement Simulation Error (%)
RDS (on) 15.000 15.000 0.000
VGS
10Vdc
0
VDS
0Vdc
V2
0VdcU22
2SK3301
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Time*1mS
0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n
V(W1:3)
0V
2V
4V
6V
8V
10V
12V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=100V,ID=45A ,VGS=10V
Measurement Simulation Error (%)
Qgs 1.000 nC 1.411 nC 41.100
Qgd 3.000 nC 2.558 nC -14.733
Qg 7.700 nC 5.570 nC -27.662
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0I2 = 1m
TR = 10n
D1
Dbreak
V2
0Vdc
V1100Vdc
0
-
+W1
ION = 0uAIOFF = 100uA
W
ROFF = 1GRON = 1.0p
U28
2SK3301 I20.4545Adc
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Gate Charge Characteristic Reference
0
2
4
6
8
10
12
0 1 2 3 4 5 6 7 8 9 10
GATE CHARGE Qg(nc)
GA
TE
VO
LT
AG
E
Vg
(V
)
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Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.100 82.197 82.000 -0.240
0.200 72.541 73.000 0.633
0.500 55.139 56.000 1.562
1.000 42.188 41.000 -2.816
2.000 24.628 24.000 -2.550
5.000 12.243 12.000 -1.985
10.000 4.950 5.000 1.010
20.000 2.241 2.200 -1.808
Simulation
Measurement
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RL
800
R1
50
3
L1
30nH
2
0
U13
2SK3301
L2
30n
VDD
400Vdc
V2TD = 2u
TF = 7nPW = 10uPER = 20u
V1 = 0
TR = 6n
V2 = 10
Time
1.900us 1.950us 2.000us 2.050us 2.100us 2.150us1.854us
V(2) V(3)/40
0V
1V
2V
3V
4V
5V
6V
7V
8V
9V
10V
11V
12V
13V
14V
15V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=0.5A, VDD=400V,VGS=10V Measurement Simulation Error(%)
ton 60.000 ns 59.477 ns -0.872
VGS
ID
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0
U24
2SK3301V1
0
V2
0
V3
0Vdc
V_V2
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(V3)
0A
20mA
40mA
60mA
80mA
100mA
120mA
140mA
160mA
180mA
200mA
Output Characteristic
Circuit Simulation result
Evaluation circuit
3.8 V
4.2 V
4.0 V
VGS=3.6V
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Output Characteristic Reference
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V1(V1)
0V 0.5V 1.0V 1.5V
I(R1)
1.0mA
10mA
100mA
1.0A
BODY DIODE SPICE MODEL Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc U162SK3301
R1
0.01m
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
1
10
100
1000
0.00 0.50 1.00 1.50 2.00
Source-Drain Voltage VDS (V)
Dra
in R
evers
e C
urr
en
t I
DR
(m
A)
Measurement
Simulation
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VDS(V)
Measurement VDS(V)
Simulation %Error
1.000 0.516 0.518 0.388
2.000 0.546 0.545 -0.183
5.000 0.584 0.582 -0.342
10.000 0.612 0.610 -0.327
20.000 0.644 0.640 -0.621
50.000 0.688 0.686 -0.291
100.000 0.734 0.730 -0.545
200.000 0.788 0.786 -0.254
500.000 0.896 0.889 -0.781
1000.000 1.006 0.980 -2.584
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Time
16us 20us 24us 28us 32us 36us 40us 44us 48us 52us
I(RL21)
-400mA
0A
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 0.900 us 0.902 us 0.222
trb 2.800 us 1.049 us -62.536
trr 3.700 us 1.951 us -47.270
U21
2SK3301
0
V21TD = 12.4uTF = 10n
PW = 20uPER = 60u
V1 = -9.38
TR = 10n
V2 = 10.60
RL21
50
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Reverse Recovery Characteristic Reference
Trj=0.90(us) Trb=2.8(us) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
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0
R1
0.01mOpen
U19
2SK3301
V1
0Vdc
V_V1
0V 20V 40V 60V 80V 100V 120V 140V 160V 180V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference