SINGULUS NDT
September 2010
- 1 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARISLinear Dynamic Deposition Technology
forProduction of Spintronic Devices
W. Maass, B. Ocker, J. LangerSingulus Technologies AG, Germany
SINGULUS NDT
September 2010
- 2 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Singulus – The Company
Public traded: SNG
Employees WW: 572 (Singulus Group at December 31st, 2009; 487 FTE after divestiture of Hamatech APE)
Revenue WW: 116.6 mio € (2009)
Sales/Service: Locations WW
Core Business: Optical Media
Diversification: Solar (Acquisition of Stangl AG)
Business UnitNano Deposition Technologies (NDT)
Germany, Kahl am Main near Frankfurt
SINGULUS NDT
September 2010
- 3 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS
Motivation:
Essential part of many Spintronic Devices are TMR (or GMR) layer stacks
These layer stacks have to be prepared and manufactured on Ø200mm or Ø300mm wafers
R&D as well as Production related criteria will apply for any deposition tool to be used
The special design of these TMR Layer stacks require a specialized deposition system
SINGULUS NDT
September 2010
- 4 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Pinned Layer 1 (CoFe)
Pinned Layer 2 (Co60Fe40)
Free Layer 2 (NiFe)
Capping Layer (Ta)
Antiferromagnet (PtMn, IrMn)
Seed Layer 2 (NiFe)
Contact (Cu, Al)
Buffer (Ta)
Seed Layer 1 (Ta, NiFeCr)
Free Layer 1 (CoFe, CoFeB)
Barriere (MgO, Al2O3)
AAF Spacer (Ru)
2-5 nm
40-60 nm
2-5 nm
2-5 nm10-25 nm
0.8-1.5 nm0.4-1.5 nm
2-3 nm
2-3 nm
2-3 nm0.7 nm
5-15 nm
8 different materials (or even more ??) in the TMR layer stack !
Production of MRAM and Spintronic Devices on Ø200 mm or Ø300 mm wafers!
MRAM Technology: Field Induced Switching
SINGULUS NDT
September 2010
- 5 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Typical R&D / Production Criteria
TMR Wafer Production (MRAM and Spintronic Devices)
Requirements for the Deposition Process Tight Thickness Control of Ultra-Thin Films
Thinnest Film < 0.1 nm; Smallest Thickness Step: < 0.01 nm Reliable & effective manufacturing of multi – layers of sub – nanometer
individual thickness including ferromagnetic films Very stable and reliable TMR performance High MgO deposition rate In – situ wafer annealing
Heating up to 600°C and cooling prior to deposition of certain films Extremely short latency between heating/cooling and deposition
Process advantage for L01 formation in perpendicular TMR designs
High Yield/Wafer by uniform TMR & Magnetic Properties Full flexibility regarding PVD – mode for all targets: DC, pulsed DC, RF
Throughput, Cost of Ownership
Particle, Contamination, ...
SINGULUS NDT
September 2010
- 6 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: LDD Process technology
Deposition Area
Wafer Travel
Static DepRate
Magnet Array
Sputter Target
Wafer
Deposition technique: Linear PVD Magnetron and linear movement of wafer:
Linear Dynamic Deposition (LDD)
• Short Target-Substrate Distance:- Good Coating Efficiency
• Thickness adjusted by wafer speed:- Tight control & repeatability
• Multi-directional coating:
- Smooth films and Interfaces
• Leakage field of cathode parallel to wafer travel direction:
- Ideal symmetry for magnetic film applications
• Stationary Aligning Magnetic Field (AMF):
- AMF can be optimized with cathode
- Robust and reliable design
SINGULUS NDT
September 2010
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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
A Proven Deposition Tool for TFH, MRAM and other Semiconductor Applications
TIMARIS
300/200/150/100mm PVD Bridge System
TIMARIS: 30 years of Experience
In its history the NDT team has designed, built and run different types of production tools (PVD, IBD, CVD) for
Thin Film Head Manufactering (e.g. Ferro – Magnetic films and film stacks) Flat Panel Display (large area deposition) Semiconductor (e.g. Metallization)
TIMARIS
SINGULUS NDT
September 2010
- 8 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Photography
Multi Target ModuleTop: Target Drum with 10 rectangular cathodes; Drum design ensures easy maintenance;Bottom: Main part of the chamber containing LDD equipment
Transport Module(UHV wafer handler MX700)
Soft-Etch Module(PreClean, Surface Treatment)
Cassette Modules(according to Customer request)
Ultra – High – Vacuum Design: Base Pressure 5*10-9 Torr (Deposition Chamber)
High Throughput: 10 Wafer/Hour (NiFe 2.5nm/CoFe70 250nm)
High Tool Availability: Maintenance friendly Design
High Reliability: Solid and Well Engineered Design Up-Time: 90%, MTBF: 150h, MTTR: 3h
RF – Equipment(Match – Box, RF - Switches)
SINGULUS NDT
September 2010
- 9 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
2 x Multi-Target-Modules with 10 Targets each
1 x Combi-Process-Module (CPM)
1 x Rotating Substrate Module (RSM) w/ one PVD and one Ion Source
ASYS UHV Transport Module incl. single port EFEM/FOUP
21 PVD cathodes in one system
(configuration can be modified according to customer request)
Tool Configuration for advanced Thin Film Head or Semiconductor R&D:•Processing of wafers up to Ø300mm
TIMARIS: Example for Layout
SINGULUS NDT
September 2010
- 10 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Modularity
Rotating Substrate Module (RSM):Rotating substrate deposition
Tilting of substrate wrt. process direction
Multiple process options depending on the installed process equipment (not all of the shown options can be combined):
Up to six (6) PVD cathodes (DC, pulsed DC, RF), target diameter 125mm (5”) or below w/ cathode shutters
Up to two (2) PVD cathodes (DC, pulsed DC, RF), target diameter 320mm (12”) w/ cathode shutters
One (1) Ion source according to specification
Thin film characterization metrology
Substrate heating (up to 450°C)
Remote plasma / Natural (O2) oxidation
Co – sputtering
Con – focal sputtering
Cathode – Substrate – Distance can be changed (by adapter)
Base pressure 10-8 Torr
In-situ Aligning Magnetic Field
(1 RSM module in design phase to be manufactured)
SINGULUS NDT
September 2010
- 11 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Magnetic Requirements:
Alignment across Wafer
Specification:
Easy Axis deviation < +/- 2°
TIMARIS: LDD Process technology
Example: Seed/Fe70Co 250nm
MOKE measurements, 49 points,
Measured alignment of the Easy Axis across wafer:
50
100
150
200
250
50 100 150 200 250
X - position [mm]
Y -
po
siti
on
[m
m]
CoFe
Seed
TIMARIS
SINGULUS NDT
September 2010
- 12 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Example: Seed/Fe70Co 250nm deposited not by TIMARIS
MOKE measurements, 49 points,Alignment of the Easy Axis across wafer
CoFe
Seed
50.0
100.0
150.0
200.0
250.0
50.0 100.0 150.0 200.0 250.0
X position [mm]
Y p
osi
tio
n [
mm
]Process technology by Circular Cathodes
Remark: The shown data are to demonstrate the principal issues related with the discussed deposition technology. It is not argued, that certain process results cannot be achieved at all with the respective technology!
Comparison with Competition
SINGULUS NDT
September 2010
- 13 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: MgO – TMR, Summary
MgO – Barrier, TMR vs. RA: Typical layer stack: Ta5/PtMn20/CoFe2.3/Ru0.8/CoFeB2.2/MgO1.2/CoFeB3.0/Ta10 (nm)
SINGULUS NDT
September 2010
- 14 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-150 -100 -50 0 50 100 150
Distance from centre [mm]
RA
[no
rma
lize
d]
5Ohmµm²
26Ohmµm²
parallel stage movement
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-150 -100 -50 0 50 100 150
Distance from centre [mm]
RA
[no
rmliz
ed
]
5Ohmµm²
26Ohmµm²
perpendicular stage movement
3 Ta / 16 PtMn / 2.5 CoFe30 / 0.85 Ru / 2.4 Co40Fe40B20 / rf-MgO / 2.0 Co40Fe40B20 / 10 Ta
Annealing: 1.0 Tesla, 360°C, 2h
RA: 2.9%RA: 3.2%
RA: 3.7%RA: 4.3%
TIMARIS: Uniformity of RF sputtered MgO
perpendicular
parallel
Ø300mm
5µm²:(Lead: 5 Ta / 50 CuN / 3 Ta / 50 CuN)
RA uniformity : 3.8% (1)MR uniformity : 3.2% (1)
MgO :thickness: 0.84 nmth. uniformity: 0.025 nm (MaxMin)th. uniformity: 0.61% (1)
26µm²:(Lead: 5 Ta / 30 CuN /)
RA uniformity : 4.1% (1)MR uniformity : 2.8% (1)
MgO :thickness: 1.06 nmth. uniformity: 0.03 nm (MaxMin)th. uniformity: 0.53% (1)
SINGULUS NDT
September 2010
- 15 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Perpendicular Magnetic Anisotropy (PMA)
Perpendicular to plane In-plane
PMA: Sub / Seed / [Co (0.3nm)/ Pd (1.0nm)] x 3/ Ta (10 nm)VSM measurements
TIMARIS: very tight control of Co and Pd thickness to adjust perpendicular anisotropy
Field annealing: 1.0 Tesla, 300°C, 2h
SINGULUS NDT
September 2010
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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Deposition of Wedge-Films by LDD Technology
Variable film thickness across wafer for thickness optimization by changing wafer speed during deposition.
Range 1.0nm to 2.0nm is example only !!
TIMARIS: MgO – TMR, Wedge Technology
SINGULUS NDT
September 2010
- 17 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: MgO – TMR, Wedge Technology
Layer stacks:
Etch/5Ta/50CuN/3Ta/50CuN/3Ta/16PtMn/2CoFe30 /0.9Ru/2.3Co40Fe40B20/wedge MgO/2.3Co40Fe40B20/
10Ta/30CuN/7Ru (nm) Co40Fe40B20 (A), (B)
Etch/5Ta/45CuN/3Ta/45CuN/3Ta/16PtMn/2CoFe30 /0.9Ru/2.3Co60Fe20B20/wedge MgO/2.3Co60Fe20B20/
10Ta/30CuN/7Ru (nm)
Wedge Technology:
20 – 30 data points with different MgO thickness by
deposition of one wafer only
SINGULUS NDT
September 2010
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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TMR with Perpendicular Magnetic Anisotropy (PMA)
Deposition of different materials on hot substrates:Goal short temperature transitions
Principle:
TIMARIS: Substrate Heating Technology(Patent pending)
SINGULUS NDT
September 2010
- 19 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
TMR with Perpendicular Magnetic Anisotropy (PMA)
Deposition of different materials on hot substrates:Goal short temperature transitions
Experimental result (example):
0
50
100
150
200
250
300
0 100 200 300 400
Time [sec]
Tem
pe
ratu
re [
°C]
Heating
Cool down
Temperatures up to 450°C
Short heating and cooling time
Heating and cooling within the deposition module resulting in very short latency time between heating/cooling and deposition
He
ate
r O
N
Clo
se
d l
oo
p c
trl
TIMARIS: Substrate Heating Technology(Patent pending)
SINGULUS NDT
September 2010
- 20 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Heating Experiments :
Short temperature rise time
TIMARIS: Substrate Heating Technology(Patent pending)
Conditions:
Substrate: Ø200mm Si wafer
Extra data point: 100nm Ru coated( not calibrated)
Power of heater: 50%
Temperature start point: 100°C
Closed loop control: not optimized
0
10
20
30
40
50
60
0 200 400 600 800
Temperature Setpoint [°C]
Hea
t-u
p T
ime
[s]
SINGULUS NDT
September 2010
- 21 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Heating Experiments :
Temperature rise time, effect of coating:
TIMARIS: Substrate Heating Technology(Patent pending)
Conditions:
Substrate:
a) Ø200mm Si wafer
b) Ø200mm Si wafer + 100nm Ru( not adjusted)
Temperature start point: approx. 100°C
Closed loop control: not optimized
0
100
200
300
400
500
600
0 10 20 30 40 50 60
heat up time [s]
Py
rom
ete
r te
mp
ert
au
re [
°C]
blank Si wafer
Si Wafer + 100nm Ru
SINGULUS NDT
September 2010
- 22 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Heating Experiments :
Cooling after heating
TIMARIS: Substrate Heating Technology(Patent pending)
Conditions:
Substrate: Ø200mm Si wafer
Conclusion:
Temperature drop has to be considered
Deposition of approx. 3nm of ferromagnetic material can be done in ca. 15 sec.
SINGULUS NDT
September 2010
- 23 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla
Adjustment of alloy concentration for TMR films with Perpendicular Magnetic Anisotropy (LDD – Technology)
Deposition of FexPd(1-x) or FexPt(1-x) as well as other alloys requires in
many cases a carefully adjustment of the material concentration to get the best device performance.
TIMARIS’ “Gradient Concentration Alloy” capability allows to deposit films on wafers with varying concentration across the wafer. The gradient of this concentration variation can be adjusted.
TIMARIS: Gradient Concentration Alloy films(Patent pending)
Fe - rich Pd - rich
SINGULUS NDT
September 2010
- 24 -
ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla