-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
1/15
ITRS: RF and Analog/Mixed-
Signal Technologies for Wireless
Communications
Nick Krajewski
CMPE 640
11/16/2005
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
2/15
IntroductionIntroduction
4 Working Groups within Wireless Analog and Mixed Signal (0.8 – 10 GHz) (Covered today)
RF Transceivers (0.8 – 10 GHz) (Covered today)
Power Amplifiers and Power Management (0.8 – 10GHz)
Millimeter Wave (10-100GHz)
PA’s and Power Management and Millimeter Waveto be covered by Chandra on 11/30.
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
3/15
Analog and Mixed Signal: Scope Analog and Mixed Signal: Scope
1) Analog speed devices (although the speed is mainlydriven by RF there are certain analog-specific needs for
both high speed bipolar and CMOS)
2) Analog precision MOS device scaling but withrelatively high voltages to achieve high signal to noise
ratios and low signal distortion
3) Capacitors, and resistors; all devices are optimized forprecision, matching performance, 1/f noise, low non-
linearity, and low temperature gradients.
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
4/15
Analog and Mixed Signal:Difficult Challenges
Analog and Mixed Signal:Difficult Challenges
Signal isolation between digital and analog regions of the chip. Integrating analog and high-performance digital functions on a
chip (scaling). Difficult to maintain analog performance
parameters (mismatch and 1/fnoise together with new high-κ gate
dielectrics). Transition to analog supply voltage of less than 1.8V.
Integration of analog functions in digital CMOS (depending on
new materials or device structures added to digital CMOS
process). Problems include SOI, double-gate devices andchanges in material choices for passive devices. Transition to
analog supply voltage of less than 1.0V.
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
5/15
Analog and Mixed Signal:Technology Requirements Analog and Mixed Signal:Technology Requirements
2.5–1.82.5–1.82.5–1.82.5–1.82.5–1.8 Analog Supply
Voltage (V)
1.11.11.11.21.2Digital SupplyVoltage (V)
DRAM ½ Pitch (nm) 5057657080
20092008200720062005
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
6/15
Analog and Mixed Signal:Potential Solutions
Analog and Mixed Signal:Potential Solutions
SOI and SIP (combines circuits on differenttechnologies and is optimized for desired
functions)
On-chip passive components
Device matching
Integrated shielding structures
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
7/15
Analog and Mixed Signal: 2004Updates
Analog and Mixed Signal: 2004Updates
Technology requirements aligned for analogdevices with Low Standby Power (LSTP)
roadmap instead of Low Operating Power (LOP)
roadmap.
Challenges for reducing 1/f noise in high-k
dielectrics relaxed to color coding of yellow fromred.
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
8/15
RF Transceivers: ScopeRF Transceivers: Scope
Process technologies – CMOS and Si or SiGeBiCMOS.
Applications – low noise amplifiers (LNAs),
frequency synthesis and logic, voltage controlledoscillators, driver amplifiers, and filters.
Devices include NPN bipolar transistors, RF-
MOS (NMOS) field effect transistors, inductors,varactors, RF capacitors, and resistors.
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
9/15
RF Transceivers: Scope cont’dRF Transceivers: Scope cont’d
Primary metrics for performance are maxfrequency at unity current gain (max Ft), max
frequency at unity power gain (Fmax), noise
figure, and trade-offs among power, noise, andlinearity.
Assumes frequency is 800 MHz to 10 GHz range.
Covers GSM, CDMA, Wideband CDMA, 802.11 protocol
for local area networks, and ultra wideband (UWB).
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
10/15
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
11/15
RF Transceivers: DifficultChallenges
RF Transceivers: DifficultChallenges
Aggressive scaling of passive elements(capacitors and inductors)
Reducing cost of BiCMOS technology while
improving power and performance, and improvingperformance of RF-CMOS devices
Signal isolation
Improving the performance (Ft and Fmax) ofactive devices (long term)
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
12/15
RF Transceivers: TechnologyRequirements
RF Transceivers: TechnologyRequirements
1.51.51.51.81.8Vcc (V)347302262228198Peak Ft (GHz)
387330295256239Peak Fmax (GHz)
NMOS
310260220190160Peak Fmax (GHz)
NPN
240
1.2
572008
280200170140Peak Ft (GHz)
1.11.21.31.3Vdd (V)
50657080DRAM ½ Pitch (nm)2009200720062005
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
13/15
RF Transceivers: PotentialSolutions
RF Transceivers: PotentialSolutions
Improve Ft up to 300 GHz – vertical and lateral scaling Improve Ft above 300 GHz – atomic layer epitaxy
Laterally diffused channels to improve performance of
high voltage devicesMetal gates
For MIM capacitors – high-k dielectrics
For inductors – thicker layers of Cu and thicker top
dielectrics
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
14/15
RF Transceivers: 2004 UpdatesRF Transceivers: 2004 Updates
Similar to Near Term Table, lag between RadioFrequency (RF) CMOS gate length and BiCMOS
gate length occurs in Long Term Table.
RFCMOS: technology requirements maintained 1
year lag from LSTP roadmap.
-
8/17/2019 RF and Analog/Mixed- Signal Technologies for Wireless Communications
15/15
Questions?