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Lecture 1: Circuits & Layout
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 2
Outline q A Brief History q CMOS Gate Design q Pass Transistors q CMOS Latches & Flip-Flops q Standard Cell Layouts q Stick Diagrams
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 3
A Brief History q 1958: First integrated circuit
– Flip-flop using two transistors – Built by Jack Kilby at Texas
Instruments q 2010
– Intel Core i7 µprocessor • 2.3 billion transistors
– 64 Gb Flash memory • > 16 billion transistors
Courtesy Texas Instruments
[Trinh09]
© 2009 IEEE
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 4
Growth Rate q 53% compound annual growth rate over 50 years
– No other technology has grown so fast so long q Driven by miniaturization of transistors
– Smaller is cheaper, faster, lower in power! – Revolutionary effects on society
[Moore65]
Electronics Magazine
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 5
Annual Sales q >1019 transistors manufactured in 2008
– 1 billion for every human on the planet
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 6
Invention of the Transistor q Vacuum tubes ruled in first half of 20th century
Large, expensive, power-hungry, unreliable q 1947: first point contact transistor
– John Bardeen and Walter Brattain at Bell Labs – See Crystal Fire
by Riordan, Hoddeson
AT&T Archives. Reprinted with
permission.
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 7
Transistor Types q Bipolar transistors
– npn or pnp silicon structure – Small current into very thin base layer controls
large currents between emitter and collector – Base currents limit integration density
q Metal Oxide Semiconductor Field Effect Transistors – nMOS and pMOS MOSFETS – Voltage applied to insulated gate controls current
between source and drain – Low power allows very high integration
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 8
q 1970’s processes usually had only nMOS transistors – Inexpensive, but consume power while idle
q 1980s-present: CMOS processes for low idle power
MOS Integrated Circuits
Intel 1101 256-bit SRAM Intel 4004 4-bit µProc
[Vadasz69]
© 1969 IEEE.
Intel Museum.
Reprinted with permission.
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 9
Moore’s Law: Then q 1965: Gordon Moore plotted transistors per chip
– Fit straight line on semi-log scale – Transistor counts have doubled every 26 months
Integration Levels
SSI: 10 gates
MSI: 1000 gates
LSI: 10,000 gates
VLSI: > 10k gates [Moore65]
Electronics Magazine
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 10
And Now…
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 11
Feature Size q Minimum feature size shrinking 30% every 2-3 years
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 12
Corollaries q Many other factors grow exponentially
– Ex: clock frequency, processor performance
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 13
CMOS Gate Design q Activity:
– Sketch a 4-input CMOS NOR gate
A
B
C
DY
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 14
Complementary CMOS q Complementary CMOS logic gates
– nMOS pull-down network – pMOS pull-up network – a.k.a. static CMOS
pMOSpull-upnetwork
outputinputs
nMOSpull-downnetworkPull-up OFF Pull-up ON
Pull-down OFF Z (float) 1
Pull-down ON 0 NO!
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 15
Series and Parallel q nMOS: 1 = ON q pMOS: 0 = ON q Series: both must be ON q Parallel: either can be ON
(a)
a
b
a
b
g1
g2
0
0
a
b
0
1
a
b
1
0
a
b
1
1
OFF OFF OFF ON
(b)
a
b
a
b
g1
g2
0
0
a
b
0
1
a
b
1
0
a
b
1
1
ON OFF OFF OFF
(c)
a
b
a
b
g1 g2 0 0
OFF ON ON ON
(d) ON ON ON OFF
a
b
0
a
b
1
a
b
11 0 1
a
b
0 0
a
b
0
a
b
1
a
b
11 0 1
a
b
g1 g2
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 16
Conduction Complement q Complementary CMOS gates always produce 0 or 1 q Ex: NAND gate
– Series nMOS: Y=0 when both inputs are 1 – Thus Y=1 when either input is 0 – Requires parallel pMOS
q Rule of Conduction Complements – Pull-up network is complement of pull-down – Parallel -> series, series -> parallel
A
B
Y
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 17
Compound Gates q Compound gates can do any inverting function q Ex: Y = NOT(AB + CD) (AND-AND-OR-INVERT, AOI22)
A
B
C
D
A
B
C
D
A B C DA B
C D
B
D
YA
CA
C
A
B
C
D
B
D
Y
(a)
(c)
(e)
(b)
(d)
(f)
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 18
Example: O3AI q Y = NOT{(A + B + C)�D}
A B
Y
C
D
DC
B
A
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 19
Signal Strength q Strength of signal
– How close it approximates ideal voltage source q VDD and GND rails are strongest 1 and 0 q nMOS pass strong 0
– But degraded or weak 1 q pMOS pass strong 1
– But degraded or weak 0 q Thus nMOS are best for pull-down network
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 20
Pass Transistors q Transistors can be used as switches
g = 0s d
g = 1s d
0 strong 0Input Output
1 degraded 1
g = 0s d
g = 1s d
0 degraded 0Input Output
strong 1
g = 1
g = 1
g = 0
g = 01
g
s d
g
s d
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 21
Transmission Gates q Pass transistors produce degraded outputs q Transmission gates pass both 0 and 1 well
g = 0, gb = 1a b
g = 1, gb = 0a b
0 strong 0
Input Output
1 strong 1
g
gb
a b
a bg
gb
a bg
gb
a bg
gb
g = 1, gb = 0
g = 1, gb = 0
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 22
Tristates q Tristate buffer produces Z when not enabled
EN A Y 0 0 Z 0 1 Z 1 0 0 1 1 1
A Y
EN
A Y
EN
EN
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 23
Nonrestoring Tristate q Transmission gate acts as tristate buffer
– Only two transistors – But nonrestoring
• Noise on A is passed on to Y
A Y
EN
EN
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 24
Tristate Inverter q Tristate inverter produces restored output
– Violates conduction complement rule – Because we want a Z output
A
YEN
A
Y
EN = 0Y = 'Z'
Y
EN = 1Y = A
A
EN
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 25
Multiplexers q 2:1 multiplexer chooses between two inputs
S D1 D0 Y
0 X 0 0
0 X 1 1
1 0 X 0
1 1 X 1
0
1
S
D0
D1Y
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 26
Gate-Level Mux Design q q How many transistors are needed? 20
1 0 (too many transistors)Y SD SD= +
44
D1
D0S Y
4
2
22 Y
2
D1
D0S
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 27
Transmission Gate Mux q Nonrestoring mux uses two transmission gates
– Only 4 transistors S
S
D0
D1YS
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 28
Inverting Mux q Inverting multiplexer
– Use compound AOI22 – Or pair of tristate inverters – Essentially the same thing
q Noninverting multiplexer adds an inverter
S
D0 D1
Y
S
D0
D1Y
0
1S
Y
D0
D1
S
S
S
S
S
S
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 29
4:1 Multiplexer q 4:1 mux chooses one of 4 inputs using two selects
– Two levels of 2:1 muxes – Or four tristates
S0
D0
D1
0
1
0
1
0
1Y
S1
D2
D3
D0
D1
D2
D3
Y
S1S0 S1S0 S1S0 S1S0
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 30
D Latch q When CLK = 1, latch is transparent
– D flows through to Q like a buffer q When CLK = 0, the latch is opaque
– Q holds its old value independent of D q a.k.a. transparent latch or level-sensitive latch
CLK
D Q
Latch D
CLK
Q
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 31
D Latch Design q Multiplexer chooses D or old Q
1
0
D
CLK
QCLK
CLKCLK
CLK
DQ Q
Q
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 32
D Latch Operation
CLK = 1
D Q
Q
CLK = 0
D Q
Q
D
CLK
Q
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 33
D Flip-flop q When CLK rises, D is copied to Q q At all other times, Q holds its value q a.k.a. positive edge-triggered flip-flop, master-slave
flip-flop
Flop
CLK
D Q
D
CLK
Q
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 34
D Flip-flop Design q Built from master and slave D latches
QMCLK
CLKCLK
CLK
Q
CLK
CLK
CLK
CLK
D
Latch
Latch
D QQM
CLK
CLK
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 35
D Flip-flop Operation
CLK = 1
D
CLK = 0
Q
D
QM
QMQ
D
CLK
Q
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 36
Race Condition q Back-to-back flops can malfunction from clock skew
– Second flip-flop fires late – Sees first flip-flop change and captures its result – Called hold-time failure or race condition
CLK1
D Q1
Flop
Flop
CLK2
Q2
CLK1
CLK2
Q1
Q2
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 37
Nonoverlapping Clocks q Nonoverlapping clocks can prevent races
– As long as nonoverlap exceeds clock skew q We may use them in this class for safe design
– Industry manages skew more carefully instead φ1
φ1φ1
φ1
φ2
φ2φ2
φ2
φ2
φ1
QMQD
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 38
Gate Layout q Layout can be very time consuming
– Design gates to fit together nicely – Build a library of standard cells
q Standard cell design methodology – VDD and GND should abut (standard height) – Adjacent gates should satisfy design rules – nMOS at bottom and pMOS at top – All gates include well and substrate contacts
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 39
Example: Inverter
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 40
Example: NAND3 q Horizontal N-diffusion and P-diffusion strips q Vertical polysilicon gates q Metal1 VDD rail at top q Metal1 GND rail at bottom q 32 λ by 40 λ
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 41
Stick Diagrams q Stick diagrams help plan layout quickly
– Need not be to scale – Draw with color pencils or dry-erase markers
c
AVDD
GND
Y
AVDD
GND
B C
Y
INV
metal1polyndiffpdiffcontact
NAND3
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CMOS VLSI Design 4th Ed.
1: Circuits & Layout 42
Wiring Tracks q A wiring track is the space required for a wire
– 4 λ width, 4 λ spacing from neighbor = 8 λ pitch q Transistors also consume one wiring track
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CMOS VLSI Design 4th Ed.
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Well spacing q Wells must surround transistors by 6 λ
– Implies 12 λ between opposite transistor flavors – Leaves room for one wire track
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CMOS VLSI Design 4th Ed.
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32 3
40 3
Area Estimation q Estimate area by counting wiring tracks
– Multiply by 8 to express in λ
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CMOS VLSI Design 4th Ed.
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Example: O3AI q Sketch a stick diagram for O3AI and estimate area
– Y = NOT(A + B + C)�D
AVDD
GND
B C
Y
D
6 tracks = 48 3
5 tracks = 40 3
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CMOS VLSI Design 4th Ed.
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Summary q A Brief History q CMOS Gate Design q Pass Transistors q CMOS Latches & Flip-Flops q Standard Cell Layouts q Stick Diagrams