Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
ISMI 450 mm Industry Briefing
July 15th, 2009SEMICON West
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Opening Remarks
Scott KramerVice President of Manufacturing Technology
15 July 2009 3
450 mm Rationale
• Wafer size transitions produce cost savings –historical data supports
• Benefits entire industry through continued growth
• Needed to accelerate productivity gains – realizing that free and open markets determine timing
• Technical problems will be solved by continuing innovation across the industry – engineers will continue to innovate
15 July 2009 4
450 mm Timing
• ISMI programs and schedules are based on member company direction and requirements– ISMI consults regularly with its member companies to validate
schedules and priorities– Intel, Samsung, and tsmc have not
indicated a change in their timeline for targeting 450 mm pilot line capabilities beginning in 2012
– ISMI key 450 mm milestones have not changed
• Introduction and timing of any productivity improvements are determined by markets– Decisions by informed buyers and sellers
15 July 2009 5
A Reminder…
• ISMI is open to all ideas – continuous review and adjustment of plans
• There are multiple solutions possible
• Best results come from proactive, 2-way communications
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Briefing Agenda and 2009 Program Overview
Tom Jefferson450 mm Program Manager
15 July 2009 7
July 2009 Briefing Agenda
• 2009 450 mm Program Overview• 450 mm Process and Metrology Readiness
– Test Wafer Generation– Equipment Performance Metrics (EPMs)
• 450 mm Silicon Readiness• 450 mm Factory Integration Readiness• 450 mm ESH Guidelines Update• Key Messages• Question and Discussion Session
15 July 2009 8
Coordinating Industry Convergence Towards 450 mm
Equipmentreadiness
Interoperability Test Bed (ITB)
Requirementsguidelines
Early design
Mechanical wafer bank
Single crystal wafer bank • Carrier & loadport
interoperability• Data-driven standards
Equipmentdemonstrations
Equipment Performance Metrics (EPMs)
Test plansEquipmentprototypes
Metrology & process equipment development
25 wafer FOUP
Early prototypes
Test wafer generation
2007
2008
2009
2010+
15 July 2009 9
450 mm Progress – 2008->2009
Defined (32 nm demonstration tools, 22nm equipment for device maker pilot lines)
UnknownTransition Node
Mech. wfr standard passed
Carrier and Loadport stds near completion with critical featuresdetermined (wafer pitch, door opening options)
Task Forces Formed
Standards
>5M handling robot cycles and >530K loadport open/close cycles completed with prototype carriers.
4 EFEMs, 6 loadports, multiple carriers, and 2 PGVs under test
Vacuum platform mainframes are available from multiple suppliers
1 EFEM and 1 carrier in ISMI’s ITB
Factory Integration
Particle inspection, edge inspection, film thickness, and particle removal equipment are ordered, will arrive at ISMI and process 450 mm wafers in H2’09
Additional equipment capabilities are under development now
NoneProcess and Metrology Equipment
Single crystal wafers available for developmentSintered wafers available for development
Wafer Inventory
Jul-2009Jul-2008
Solid Progress – But Many Challenges Remain
15 July 2009 10
ISMI Supplier Acknowledgement
ISMI 450 mm Program would like to acknowledge the following companies for their support and participation in
the 450 mm Program:
Angstrom Sun Asyst TechnologiesBrooks Automation CDE CyberOptics Corp Entegris, Inc.Genmark Automation Gudeng Precision IndustrialH-Square Hirata CorpIDC NanophotonicsNikko SSECSUMCO SinfoniaTDK
15 July 2009 11
ISMI 450 mm Program Mission and ObjectivesMission• Enable a cost-effective 450 mm transition through coordination
and development of infrastructure, guidance, and industry readiness
2009 Objectives• Enable the supply of 450 mm single crystal silicon to continue 450 mm
equipment development• Develop test wafer generation capabilities, equipment performance
metrics, and demonstration test methods to enable equipment demonstrations in 2010
• Cleanroom evaluation of standards-compliant 450 mm carriers, loadports, and EFEMS
• Creation of 450 mm ESH guidelines with an emphasis on “green manufacturing”
• Industry coordination and communication to enable the 450 mm transition
15 July 2009 12
450 mm Technology Node Intercept Strategy
• The IC makers committed to the 450 mm transition have significant differences in products, business models, and technologies
• But they have agreed on nominal performance targets, common timeline, and strategy for test wafer generation, equipment demonstrations, and first-generation production equipment– 450 mm test wafer generation capabilities in 2009, with 300 mm-
equivalent capability– Equipment demonstrations for process and metrology equipment in 2010
to 2012, with 32 nm [1] capability– Production-ready equipment capable of supporting IC maker pilot lines in
2012+ with technology scalable to 22 nm [1] and beyond
This alignment can help minimize development costs [1]:
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15 July 2009 13
ISMI Equipment Development Strategy
Bare wafers for alpha tool development
Beta/demo tool developmentAlpha tool development
Bare wafer
supply
Bare wafers for beta/demo tool development
Demo execution
Demo tool ready
Equipment Performance Metrics (EPMs) Guide Supplier Demo Tool Development Targets
Process and reliability data
Capable of meaningful
demonstration
Next generation toolInitial prototype
Basic quality wafers Significantly improved quality
Test wafers (TWs) for alpha tool development
TW for beta/demo tool development
TWs for equipment
demosWafers for
process testing
Basic test wafers from minimal toolset Increased sophistication with better tools and more tool types
Targets useful for alpha tool and demo tool design
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Test Wafer Generation
Tom AbellTest Wafer Generation Project Manager
15 July 2009 15
Test Wafer Problem Statement
• Process and metrology equipment suppliers need test wafers (TWs) to create their processes for in-house prototype tool development
• Test wafers must be of sufficient quality and quantity for each stage of equipment development– Lower quality requirements for early prototypes and
testing– Increasing sophistication and particle quality for process
and hardware refinement
15 July 2009 1616
Test Wafer Generation Strategy
Motivation
• Feedback from the 300 mm conversion was that I300I coordination of test wafer generation was very important– Helped to significantly reduce development costs
ISMI Approach
• Coordinate wafer processing capability in phases to meet demands of sophistication
• Lend processed wafers to suppliers for 450 mm process and metrology equipment development
15 July 2009 17
Test Wafer Generation StagesEarly test wafers to get critical early tool capability developed
• Key item to get very basic test wafers into suppliers’ hands to begin development of other TW tools
• Tools and processes would not be expected to be of demonstration maturity
• Virtual processing at suppliers’ site OK for most processes
Test wafers to enable suppliers to develop demonstration tools• Sophisticated development-grade test wafers are required
• 193 nm litho & patterning capability with many other tool types required for demo tool development
• Sufficient quantities of wafers will be needed for adequate testing and refinement
• Virtual processing at suppliers’ site OK for some processes (i.e., not litho/track)
Test wafers to execute demonstrations at 32 nm technology node or beyond• Suppliers need very sophisticated test wafers to refine their processes to 32 nm or beyond
• Sufficient quantity of wafers is required to execute process testing and reliability marathons with process stability testing
15 July 2009 18
ISMI Equipment Development Strategy- Test wafer relationship to overall program
Bare wafers for alpha equipment development
Beta/demo tool developmentAlpha tool development
Bare wafer
supply
Bare wafers for beta/demo equipment development
Demo execution
Demo tool ready
EPMs Guide Supplier Demo Tool Development Targets
Process and reliability data
Capable of meaningful
demonstration
Next generation toolInitial prototype
Basic quality wafers Significantly improved quality
TWs for alpha equipment development
TWs for beta/demo equipment development
Demo TW generation
Sufficient quality TW for process testing
Basic test wafers from minimal toolset
Increased sophistication with better tools and more
tool types
Early TW processing
Beta/demo tool enabling TWs
Targets useful from alpha tool to demo tool design
More sophisticated TW processing
Early alpha tool enabling TWs
15 July 2009 1919
Early 450 mm Test Wafer Generation- Top Priority Capabilities
Particle Detection Metrology Film Thickness Metrology Vertical Diffusion Furnace Wet CleansPVD Metal PECVD DielectricTrackLithographyDielectric Dry EtchDry Strip AsherCD MeasurementDielectric CMP
• All equipment must be safe to operate and maintain for supplier and ISMI
= capabilities selected by ISMI, to date
Early particle data from ISMI’s NanoPhotonics tool on a 450 mm single crystal wafer
15 July 2009 20
ISMI CLEANROOM
ISMI 450 mm Cleanroom Space
• Layout for first cleanroom hardware, storage, and support tables• Space available for more test wafers, silicon, and ITB hardware
SSEC Wet Clean
NanoPhotonics Defect and Edge
Inspection
FOUP storage platforms
Transfer tables
Brooks EFEMBrooks LP
15 July 2009 21
Relaxed Expectations for Early TW Generation Tools• Some early TW tools can utilize manual loading but others cannot (i.e., defect
inspection, wet cleans)– Automated loading and unloading of FOUPs is desirable– 450 mm loadports and equipment front end modules are desired with the
understanding that standards have not yet been set (e.g., prototypes will be used)• Process capability is desired to match current 300 mm capability
– Certain tools are known to have significant process challenges with scaling– Lower capabilities may be acceptable during the early phases of test wafer
generation• Defect densities are a lower concern for the early TW tools
– Initial measurement capability at ISMI will be 90 nm diameter moving to 65 nm– Defects on single crystal wafers are expected to be minimized and improved
through upgrades or tool revision• Reliability and throughput are lesser concerns if they are sufficient to support
TW needs– No availability or run rate metrics are specified at this stage– Both are expected to improve over time with upgrades or tool revision
21
15 July 2009 22
Proposal/Quote
Positive on 450
Selection made
ISMI wfs loaned
1st TWs moved
Tool build started
1st TWs processed
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Phase 2Blanket wafer capabilities
Phase 3Patterned wafer capabilities
Jul ’09 Status Nan
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6 of 8 capabilities needed in Phase 2 have been acquired
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Phase 1: SiliconSu
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Early TW Equipment Supplier Readiness
15 July 2009 23
Summary
• ISMI has met with over 60 suppliers to discuss 450 mm plans and involvement with ISMI’s program
• 6 of 8 initial capabilities have been selected for Phase 2 test wafer generation– 3 ship in Q3’09, 2 at supplier labs, 1 recently selected– Phase 2 test wafer generation is in motion
• Phase 3 capabilities are in active discussion– 6 of 6 tool types have suppliers’ interest– 2 quotes received
15 July 2009 24
Next Steps
• If you are interested in– Discussing the overall test wafer generation project– Discussing test wafer types and metrology needs– Receiving processed test wafers for your development
program– Participating in the generation of test wafers for ISMI
• Please direct inquiries to– Tom Abell – 450 mm Senior Advisor and Test Wafer
Generation Project [email protected]
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
ISMI 450 mm Equipment Performance Metrics and Demonstration Readiness
Kuo-fu ChienDemonstration Readiness Project Manager
15 July 2009 26
Introduction
• IC makers wish to work with suppliers of wafer fab equipment to achieve capability for pilot lines in 2012 and prepare to manufacture their products on 450 mm wafers. They have determined that their technology targets for the period coincide well with ITRS definitions for contacted metal half-pitch at the 32 nm and 22 nm generations.
• The development and demonstration phase, roughly from 2010 to 2012, will focus on 32 nm capability from early testing to firstproduction-worthy process and metrology equipment.
• Equipment maturation thereafter must achieve high volume manufacturing (HVM) cost/performance to support production ramp while technology scales to 22 nm and beyond.
15 July 2009 27
Purpose and Objective
• Equipment Performance Metrics (EPMs) provide customer targets for critical process and manufacturing performance metrics to suppliers as they begin development of 450 mm equipment.
• We look forward to the beginning of manufacturing on 450 mm wafers for the entire fab tool set.
15 July 2009 28
Sources of Metrics
• Most process parameters come from ITRS technology requirements• Bare wafer defect requirements are derived from a new ISMI model
that will be incorporated into the next revision of the ITRS Yield Enhancement section
• Manufacturing metrics are a mix of ITRS Factory Integration requirements and expectations set for 300 mm – e.g., Availability from ITRS reliability metrics from I300I– 450 mm should achieve same cycle time as 300 mm
• Some come from customers; e.g., ESH imperatives, consumable reduction, use of PGV
• All have been previewed and improved by member companies’technical experts
• Supplier inputs were incorporated before EPM publications through a series of 3 workshops
15 July 2009 29
Process for Metrics Creation
3) ISMI Provide StrawmanMetrics and Methods
1) ISMI Provide Tool List
4) Member Companies Provide Feedback
5) Consult with Suppliers
6) Validate Cost andFactory Performance with
Metrics Set
7) Publish Equipment Performance Metrics and Test Methods
2) Member CompaniesProvide Tool Priorities
15 July 2009 30
General Requirements in the EPM
• The overarching requirement for 450 mm manufacturing is that it maintain the advantageous cost structure that has enabled continuing growth for industry
• A boundary condition is that 450 mm equipment be more productive than its 300 mm predecessor
• 450 mm manufacturing capability must comprehend re-use of existing 300 mm facilities
• Consumables should be held to the same level for 450 mm as for 300 mm on a per-wafer basis.
• ESH requirements are, broadly, to maintain or reduce the amounts of effluents and the use rates for energy, chemicals, and water for 450 mm tools relative to 300 mm 2008 baseline on a per-wafer basis
• It is an absolute requirement that all equipment must be safe to operate and maintain at any stage of maturity
• Equipment spare parts and modules must either be small and light enough to handle safely during maintenance and clearances adequate or ergonomic handling aids must be provided
15 July 2009 31
How to View the EPM Requirements
• Each metric is listed by attribute with units and targets for 32 nm and 22 nm.
• Suppliers should target 32 nm capabilities for the 2010-11 demonstration period and plan for extension to 22 nm capability for device maker pilot lines targeted for 2012. Manufacturing metrics are expectations for HVM.
• It is recognized that, initially, tools will not be as capable of achieving either process or productivity goals as the metrics presented in this document and may not comply with all guidelines and standards.
15 July 2009 32
EPMs are completed for 60 450 mm Process and Metrology Equipment, Organized into 11 Tool Groups
Will depend on process chemistryTo be measuredTo be measuredMTB/T Clean
< 2< 4hourMTTR> 500> 500hourMTBF
9595%Availability Manufacturing Targets(@ High Volume Manufacturing Phase)
Need to find better solution for e-chuck toeliminate need forpost-etch backside clean
< 0.28 @ > 50 nm< 0.28 @ > 75 nm#/cm2Backside on Si
< 0.0060< 0.0084#/cm2On bare Si > 30 nmDefects, PWP @ 1.5
mm edge exclusion
NoneNone-Residue after etchTo be measuredTo be measured-Charge Damage
Etch rate difference l/s to iso< 5< 5 %Loading Effect
> TBD, each company input selectivity requirements w.r.t materials
chosen
> TBD , each company input selectivity
requirements w.r.t materials chosen
-Selectivity to
ProcessCharacteristics
< 1< 1.5nmTotal Variability 3 σ – all sources
Criteria of ITRSCriteria of ITRS
32>88.7
40>88.2
nmDeg
STI Width at topSTI Sidewall angle
Criteria of ITRS309323nmSTI Depth Bulk
ProcessTargets
RequiredRequired-In-situ Chamber Clean Capability
Need better solution to eliminate bevel polymercontamination
OptionOptionin-situ Bevel Clean Capability
RequiredRequired-Auto End-point Detection
EquipmentParameters
NotesMetrics (22 nm)Metrics (32 nm)UnitsAttribute
Example:5.1 Dry Etch Dielectric, Poly - Active Area/STI
15 July 2009 33
Equipment Performance Metrics by Tool Type
SiGeEpitaxyCVD3.12
(3) TungstenCVD3.11
(2) High k DielectricCVD3.10
(1) DielectricALDCVD3.9
(4) TiN Metal Hard Mask for Damascene EtchCVD3.8
(3) TaN/Ta Barrier for Cu Metal layersCVD3.7
(2) Contact – Ti/TiN Barrier for W PlugCVD3.6
(1) Contact – Tungsten PlugMetal CVDCVD3.5
(4) Contact - Nitride Etch Stop & LinerCVD3.4
(3) Low k DielectricCVD3.3
(2) SiN, SiCN Barrier/Etch Stop/CapCVD3.2
(1) Active Area - STI Fill - Undoped OxPECVD (HPCVD or HARP)CVD3.1
CVD
(2) Damascene - Copper PolishCMP2.3
(1) Contact – Tungsten Plug PolishMetalCMP2.2
Contact - Planarize PSGDielectricCMP2.1
CMP
All levelsCoat/developTrack1.4
Non-critical levels248 nmExposure1.3
Critical levels193 nm ImmersionExposure1.2
Critical levels193 nmExposure1.1
Lithography
Process ExampleTool DescriptionTool TypeTool No.
15 July 2009 34
Equipment Performance Metrics by Tool Type
Source/DrainLow Energy/High CurrentImplant/Plasma Immersion8.3Gate ExtensionsMedium CurrentIon Implantation8.2Deep WellsHigh EnergyIon Implantation8.1
DopingDamascene FillCopperElectrochemical Plating7.1
Electrochemical Plating(3) Gate Electrode, Silicide, Metal Hard MaskDry Strip6.3(2) Source/Drain ImplantDry Strip6.2(1) Active AreaAsherDry Strip6.1
Dry StripBevel Edge Clean EtchDry Etch5.8
(2) Metal Hard Mask for DamasceneDry Etch5.7(1) Gate - Metal ElectrodeMetalDry Etch5.6Gate - Polysilicon/ARC PolyDry Etch5.5(3) Via/Damascene TrenchDry Etch5.4(2) ContactDry Etch5.3(1) Gate - Nitride SpacerDielectricDry Etch5.2Active Area - STI TrenchDielectric; PolyDry Etch5.1
Dry Etch(3) TiN Metal Hard Mask for Damascene EtchPVD4.6(2) TaN/Ta Barrier for Cu Metal LayersPVD4.5(1) Contact – Ti/TiN Barrier for W PlugReactive SputterPVD4.4(3) Cu SeedPVD4.3(2) Silicide Metal PVD4.2(1) Gate MetalPVD-MetalPVD4.1
PVDProcess ExampleTool DescriptionTool TypeTool No.
15 July 2009 35
Equipment Performance Metrics by Tool Type
Patterned Defect11.5Overlay11.4CD11.3Film Thickness11.2Bare Wafer Particle11.1
MetrologySolvent CleanSolventWet Clean10.5(3) Backside CleanWet Clean10.4(2) Post-AshWet Clean10.3(1) Particle RemovalWet CleanWet Clean10.2Active-area- Oxy-Nitride StripWet NitrideWet Etch10.1
Wet Process (Single Wafer or Batch Process?)Source/Drain AnnealMillisecond AnnealThermal Process9.10(2) Source/Drain AnnealThermal Process9.9(1) SilicideRapid Thermal AnnealThermal Process9.8Gate ElectrodePoly LPCVDThermal Process9.7Gate SpacerNitride LPCVDThermal Process9.6(2) Low Temp AnnealThermal Process9.5(1) DensificationAnneal Vertical FurnaceThermal Process9.4(3) N-well Sacrificial OxideThermal Process9.3(2) Rounding oxidationThermal Process9.2(1) Active area- Field OxideOxidation Vertical FurnaceThermal Process9.1
Thermal ProcessProcess ExampleTool DescriptionTool TypeTool No.
15 July 2009 36
Global Equipment Requirements
Background• As part of the Equipment Performance Metrics, equipment
suppliers requested guidance on generic requirements and scalars.
• Samsung, tsmc, and Intel jointly developed and have a consensus on the requirements.
• The global requirements apply to all process and metrology equipment.
• Requirements are split into two categories:– Carryover requirements from 300 mm – these are key 300 mm
requirements that are critical to 450 mm– 450 mm scalars and requirements – these are specific to 450 mm
15 July 2009 37
300 mm Carryover Requirements
15 July 2009 38
450 mm Scalars and Requirements
Note: Relative scalar = (450 mm capability/300 mm capability) normalized to tool run rate. For example:
x0.1
hourper wafers300mmfootprint tool300mm
hourper wafers450mmfootprinttool450mm
scalar footprint factory Relative ≤=
n/a≤ 1.0x
Utilities Consumption and wasteemissions/effluent per wspw(e.g., water, process matls, electrical, scrubbed exhaust, PFCs, bulk gases, etc)
Utilities14
TT# 06124825A-ENGISMI Consensus
100% SpecCompliance
ISMI ESH guidelines:Risk characterization of MMH activitiesSupplier provided fall protectionMass balance characterization
EHS13
n/a≤ 1.0xRelative tool qualification duration scalar12
n/a≤ 1.0xRelative tool installation duration scalar11
n/a≤ 1.0xRelative equipment footprint scalar
Equip
10
Spec Source450 mm Requirement
450 mm Scalars &Requirements
15 July 2009 39
Highlights of EPM Workshops
• Broad supplier participation (total 83 representatives from 29 suppliers) with IC makers and ISMI– Good mix of management, marketing, and technical participation
• Accomplished the key objective to launch constructive technical consultation between IC makers and suppliers, and generated information for inclusion in EPMs
• Suppliers and IC makers engaged constructively– Many good questions– Suggestions for additional metrics
• Several suppliers expressed appreciation for good technical discussion
15 July 2009 40
Equipment Demo Readiness Planning1H 2009 - Equipment Performance Metrics – COMPLETED
2H 2009 - Demonstration Test Methods Workshop• Tuesday October 20, 2009, ISMI Symposium, Austin, TX
Objective– Provide an overview of the test methodologies that the ISMI 450 mm Program will
use during evaluation of 450 mm process and metrology equipment.Target Workshop Participants
– Product development managers, engineering managers, and others responsible for the development and qualification of 450 mm process and metrology equipment.
2010 – 2012+• Demonstration of capabilities in 2010-2012 timeframe (32 nm specifications)
and technology scaling to 22 nm specifications for device maker production launch in 2012+.
15 July 2009 41
Equipment Demo Readiness Planning• Demonstration Test Method (DTM)
– Used in 300 mm to be adapted to 450 mm demos. Scaling of metrics will be based upon equipment maturity. Individual supplier discussions will be necessary. Demo test results will be available to suppliers before publication. Same test methods will be applied to all demonstrations.
• Demo Location– Time and location to be determined by the most feasible equipment demo
location. A centralized facility offers some logistical advantages. • Demo Performance
– Suppliers will be allowed to analyze and comment on the data and results.– ISMI staff will prepare a report of test results be available to suppliers
before publication. – Suppliers will have a section in the final report to comment on the
demonstration and its results. • Demo Cooperation
– ISMI can also coordinate activities between suppliers to facilitate development in some cases.
15 July 2009 42
Tool evaluation reportAssumptions :1. Test wafer available in 20092. Beta tools for 32 nm process demonstration
ITRS, ISMI member surveyTool attributes &
Performance metrics
Form project core team& performance requirement
Review & consult with supplier
Tool list & processrequirements
Demo plan Contract/SOW negotiation
Demo agreements with metrics and method
Workshop supplier survey
Demo tools select
Tool demo
Resource allocation
Project initiation &demo test method
Tool evaluationresult good?
Completed
Next Steps
In Progress
450 mm Tool Demo Process Flow
15 July 2009 43
Conclusion
• We wish to thank all who have participated in this initial compilation of requirements for the 450 mm fab tool set; the inputs of both IC makers and equipment suppliers are much appreciated. We recognize that as we move into development, our collective understanding of the performance will result in further revisions of the EPM going forward.
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Silicon Readiness
Mike Goldstein/Paul CherryDemonstration Readiness Project Managers
15 July 2009 45
Overview
• Silicon industry update
• ISMI activities
• SEMI spec status
• Summary
15 July 2009 46
Silicon Industry Update
• All major silicon suppliers have produced engineering samples and are ready to support the program.
• We see continuous improvement in the wafer quality as suppliers and equipment manufacturers advance on the learning curve and shipping methods are improved.
• Inspection equipment is coming on line.
• We are engaged with suppliers to close gaps in silicon manufacturing and inspection line.
15 July 2009 47
Wafer Quality Improvement
• The wafer quality is improving as suppliers and equipment manufacturers advance on the learning curve. – e.g., Wafer grinding pattern as revealed by NanoPhotonics haze maps.
First polished batch Second polished batch
15 July 2009 48
Planetary pad grinding has been successfully demonstrated on 450 mm single crystal silicon wafers at the Peter Wolters Wafer Technology Center
Peter Wolters AC 2000-P³ processing 450 mm single crystal wafers PPG ground 450 mm single crystal Si-wafer
Planetary Pad Grinding
15 July 2009 49
450 mm Wafer CMP Simulations
Slurry Film Mean Thickness Comparison Temperature Distribution (60 sec)
Steady State Pad Temperature
There have been some concerns about slurry flow and temperature distributions in scaling the CMP process from 300 mm to 450 mm wafers.
Simulation work done by ARAKA Corp. shows that these concerns are unfounded. The slurry thickness, the heating pattern, and the temperature distribution look remarkably similar for these two wafer sizes
15 July 2009 50
ISMI activities
• Wafer bank and loan program
• Wafer sag validation
• Wafer inspection– Particle measurement tool– Edge inspection tool
• Wafer shippers – FOSB– SWS
15 July 2009 51
Wafer Bank Status
~300 wafers, more than half single crystal, are currently available for loans
450mm Wafer Bank Loans
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15 July 2009 52
ISMI Particle/Edge Inspection Module
Edge Inspection Tool
Particle Inspection ToolBrooks EFEM
Particle/edge inspection module installation at ISMI will be completed in Q3.
Courtesy of NanoPhotonics
15 July 2009 53
450 mm FOSB
450 mm Clean Shipping Methods
Wafer Sag in FOSB
-0.90
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-0.70
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Validation of 450 mm front opening shipping boxes started
12mmPerimeter
Edge Support
1L Support
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11R Support
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Center Point
15 July 2009 54
Wafer Gravitational Sag Validation• Wafer gravitational sag of single crystal wafers measured in
collaboration with SUMCO has been presented at ISM’s briefing at SEMICON Japan 2008.
• It was determined that under the same conditions, single crystal silicon wafers sag 150-200 μm less than sintered wafers.
• Similar gravitational sag values have been measured on single crystal wafers from other suppliers.
0.100.200.300.400.500.600.700.800.901.001.10
A1 A2 B C
Waf
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ag (m
m)
450 mm, 925 µm thick silicon wafers gravitational sag in different carriers types
15 July 2009 55
SEMI Specs
• M74: Specification for 450 mm Diameter Mechanical Handling Polished Wafers was published in Nov. 08
• SEMI draft document 4624: Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers is ready for yellow ballot
Please read it and vote when the ballot is distributed. It is important to get input from the entire spectrum of the industry.
15 July 2009 56
SEMI Draft 4624• This specification contains three categories of
developmental type wafers to assist equipment manufacturers and others in specifying the best wafers to use in developing their equipment and processes:
– Particle monitors– Lithography monitors– Other monitors
• Two additional aspects of the spec proposal should be highlighted:
– Notch. The default option has a notch identical to the one in 300 mm wafer specification (M1); however, for interested customers, there is an option of a “notch-free” wafer where the notch is replaced by a fiducial inscribed on the back of the wafer
– Wafer edge. The default option is a parameter-based design; however, there is also an option to chose a slightly different, template-based design
Standard wafer with notch
“Notch-free” wafer
15 July 2009 57
Summary
• We have seen the benefits of the wafer bank and the suppliers’ interest in the wafer loan program. We are continuously increasing the number of wafers in circulation and improving the shipping methodology.
• We work with the suppliers to improve the wafer quality with a focus on metrology, cleaning, and CMP.
• We are expanding our interface with materials suppliers beyond silicon (e.g., quartzware, sputtering targets) in support of ISMI process test wafer generation.
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Factory Integration and Interoperability Test Bed (ITB)
Sung-Wook Park/Eddy BassITB Project Managers
15 July 2009 5959
Outline
• 2009 ITB Objectives
• ISMI 450 mm Guidelines – Updates
• 450 mm ITB Review
• Summary
15 July 2009 6060
2009 ITB Purposes
• Engage with FI suppliers to facilitate development of and assess critical early components – i.e., carriers, loadports, and wafer handling capability
• Accelerate SEMI standards development by providing the critical and timely data for decision making
• Assess interoperability between standardized components while providing performance benchmarks to member companies
15 July 2009 6161
FI Guidelines Summary of WorkJuly 2008 – July 2009
• The ISMI 450 mm Guidelines and Standards team has provided additional clarifying detail over the last year in the following areas:– PGV Guidance– FOSB Guidance– Exclusion Space Guidance for Loadport Guarding
15 July 2009 6262
single 450 mm 25 wafer carrier
cleanliness, electrostatic control, and vibration control
transporting and docking to/from a standards-compliant loadport
support carrier handling by using the top handling flange or bottom conveyor rails
minimize PGV size and weight
carrier drop protection during transport
protection of person and product during transfer operations- SAFE OPERATION
Notes:
•Drawing not to scale
•Graphic is for example only and is not intended to imply a preference for a specific design
450 mm Person Guided Vehicle (PGV) Guidance
• ISMI has developed PGV guidelines to enable safe handling of 450 mm carriers during early development before the availability of AMHS
– PGVs have been evaluated in ITB and early versions are available to the industry today
15 July 2009 6363
450 mm FOSB Architecture Guidance
450 mm wafer shipping boxes will be scaled up versions of the 300 mm SEMI M31 FOSB . This means that 450 mm FOSBs will have the same handling features, capacity, shock, and vibration
performance capabilities of the 300 mm FOSB, but scaled to safely ship standard 450 mm wafers.
physically fit within the dimensional envelope of the 450 mm SEMI standard FOUP
interface with 450 mm AMHS equipment through robotic handling flange
h
w
d
12mm pitch, 25 wafers
automated-shippable door, interoperable with SEMI std loadport (including KC pins, Info/sensing pads, and door opening) – same as option defined in M31
15 July 2009 64
FLOOR
-HP-
x103≥307.5
30mmPer Std
EB
Side exclusion volume may start
at Loadport Boundary
exclusion volume for guarding both sides of tool loadports
Exclusion Volume for Potential Guarding Guidance
NOTES• Data from 3rd party
assessment of potential injury risk shows that 450 mm FOUP load onto tool loadports is not significantly different than 300 mm under the same operating conditions
• Loadport guarding solutions are heavily influenced by individual device makers’operational models and 300 mm experiences
• Provider of guarding is a discussion between IC maker and supplier
Standards should enable the application of guarding for 450 mm loadports while minimizing impact to loadport footprint
Side exclusion
volume
OEM to provide connection points along tool height – To be discussed in standards development
exclusion volume on front side thickness/ depth NOT for
Stds
ISMI 450 mm interested member companies will participate in standards discussions and help the 450 mm IPIC task force define the exclusion volume
LoadportsFront View
LoadportsSide View
15 July 2009 6565
ITB Status and Accomplishments
1. 12 mm pitch decision in SEMI 450 mm IPIC supported by ITB FOUP and robotic handling testing
2. Proof of validity of 300 mm methodology scale-up has eliminated multiple options from 450 mm standards ballots
FOUPs – compliance to standards (pitch budget impacts/feedback), metrics, and interoperability tests
FOSBs – interoperability testing with EFEMs/loadportsLoadports – compliance to standards (pitch budget
impacts/feedback), metrics, and interoperability tests (>530k cycles)
EFEMS – pitch budget impacts metrics and interoperability (>5.0 M robotic moves completed at 10 mm pitch)
PGVs – Guideline compliance, metrics, and interoperability testing
11• 11 FOUPS• 3 FOSB• 4 loadports• 4 EFEMs• 2 PGVs
• 2009 SEMICON West
• 2008 SEMICON West
Time Frame
• Prototype carrier metrics tests• EFEMS/loadport metrics and interoperability tests
4• 2 sets of wafer carriers• 3 early shippers• 1 EFEM• 1 Loadport
Tests completed# of Suppliers
Total Equipment
15 July 2009 66
450 mm Vacuum Platform Development• Targeted to enable cost-effective path for prototype 450 mm equipment development
with equipment suppliers involved• Engaged with and received proposals from 5 vacuum platform suppliers to identify the
availability of 450 mm vacuum platform development• ISMI will continue to refine requirements and will host a workshop for interested platform
and chamber suppliers to gather inputs in H2 2009
Equipment front end developed…shifting focus to platforms and chambers
15 July 2009 67
~ 2.6 M moves with internal vacuum grip end-effector
450 mm EFEM with magnetic door loadport
~ 1.0 M moves
450 mm EFEM with slide-latch door loadport
450 mm EFEM with scaled-up latch-key loadport
450 mm robotic test stand – two dummy loadport position and wafer aligner
~ 420k moves with internal vac grip end-effector
First ITB equipment installed in May 2008
~ 1.0 M moves with Internal and external passive grip end-effectors
450 mm EFEMs Tested at ISMI
15 July 2009 68
450 mm Wafer Handling Robotic Moves by End-Effector Type
07/02/2009
745603
222
170
427
2577
19062
0
500
1000
1500
2000
2500
3000
Supplier A Supplier B Supplier C Supplier DLower EE
Supplier DUpper EE
Robotic Supplier
Waf
er H
andl
ing
Rob
otic
Mov
es (k
mov
es)
New Ceramic Internal EE
Vacuum Grip InternalEEPassive Grip Internal EE
Passive Grip External EE
ROBOTIC HANDLING OF 450 mm WAFERS IS SUCCESSFUL !Wafer handling robotic systems have reached 100k MCBI targets
> 5.0 M moves completed to date with 450 mm wafers
Metrics Target 100k MCBI at 80%Confidence, with no errors
450 mm Robots Cycling Status
15 July 2009 69
Pre-Blue Ballot 10 mm Pitch Magnetic Door Loadport
Pre-Blue Ballot 10 mm Pitch Latch-key Door Loadport
Pre-Yellow Ballot 10 mm Pitch Slide-latch Door Loadport
Yellow Ballot 10 mm Pitch Latch-key Door Standalone Loadport
First ITB loadport
installed in July 2008
Under continuous cycling with pre-Blue Ballot latch-key FOUPs w/no-errors
Under continuous cycling with interoperable YB FOUPs w/no-errors
Under continuous cycling with Pre-Yellow Ballot slide-latch FOUP w/no-errors
450 mm Loadport Testing at ISMI
15 July 2009 70
450 mm Equipment LoadportCycles 07/02/2009
51
103
75
201
104
0
50
100
150
200
250
Magnetic Door Rev 0 Latch-Key Door
Slide-LatchDoor
10mm PitchYellow Ballot
Latch-KeyDoor LPLoadport Type
Load
port
Cyc
les
(k c
ycle
s)
10mm Pre-Yellow Ballot FOUP
Supplier H 10mm Yellow Ballot FOUP
Supplier G 10mm Yellow Ballot FOUP
LOADPORTS FOR 450 mm CARRIERS ARE SUCCESSFUL!!!> 534k loadport cycles (i.e., open and close) completed to date with prototype carriers
Metrics Target 100k MCBI at 80%Confidence, with no errors
Currently, cycling with no errors. Expect to meet reliability target mid-July
450 mm Loadport Testing Status
15 July 2009 71
Prototype 450 mm FOUPs
• Three Rev 2 (Blue Ballot-compliant) carriers and two Rev 2 (Yellow Ballot-compliant latch-key) carriers tested in H1 2009
• 12 mm pitch FOUPs (Rev 3) received – testing beginning shortly
LK Perimeter 10mm Magnetic Perimeter 10mm
LK Perimeter 10mm
Rev 1 Carriers Rev 2 Carriers
15 July 2009 72
2 PGV Prototypes Evaluated
• Pre-cleanroom PGV evaluation phase complete. • PGVs demonstrated ready for industry usage.
Supplier “J” Rev 0 PGV Supplier “H” Rev 1 PGV
15 July 2009 7373
Summary
• ~ 5.0M robotic moves and >530k loadport cycles completed with 10 mm pitch prototype carriers
• ITB pitch budget assessment and results support 10 mm pitch, assuming 1 mm tolerance for wafer process-induced warp – 12 mm pitch currently being balloted with 3.2 mm tolerance assumption
• Prototype 10mm Yellow Ballot FOUPs, loadport and EFEMs demonstrate good interoperability and reliability
• Next phase of testing for 2nd half of 2009 is based on moving latest FI components to cleanroom to perform clean testing and standards verification
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
450 mm ESH Updates
James BeasleyESH Project Manager
15 July 2009 75
450 mm Resource Conservation Vision:No per-wafer increase in energy and water use, and air emissions
300 mm
450 mm450 mm wafer = 2.25X
surface area
450 mm presents a unique opportunity to achieve a 55% reduction in resource use per cm2
Achieving this vision requires close cooperation and communication between suppliers and end users
45%
300 mm n/cm2
450 mm n/cm2
15 July 2009 76
450 mm Energy Conservation Strategies• Measure and report using the ISMI S23 Total Equivalent Energy Calculator
– SEMATECH DOC ID #: 06094783B-ENG (public document)• Characterize and reduce disparity between design power and actual measured
power; target is < 125% (design/actual) • Identify and enable idle mode opportunities with mainframe and support
equipment
A holistic approach to equipment, factory, and operations is best and will require close cooperation between suppliers and end users
Accurate reporting of energy consumption using the ISMI S23 TEE Tool is the starting point for 450 mm
Vac Pump
Power
BlowerPower
Compressor
Power
RF
Power
Turbopump
Power
Vac Pump
PowerWaste Pump
Power
Recirc Pump
Power
Chamber HeatPower
Electrical Power ModulationIn a Sleep/Idle State
Already off during idle
FeasibleLittle to No Process Impact
Not FeasibleProcess Impact
ISMI ConfidentialISMI Confidential
Vac Pump
Power
BlowerPower
Compressor
Power
RF
Power
Turbopump
Power
Vac Pump
PowerWaste Pump
Power
Recirc Pump
Power
Chamber HeatPower
Electrical Power ModulationIn a Sleep/Idle State
Already off during idle
FeasibleLittle to No Process Impact
Not FeasibleProcess Impact
ISMI ConfidentialISMI Confidential
15 July 2009 77
450 mm Water Use Strategies
• Report water use and liquid effluents using the ISMI Guideline for Environmental Characterization of Semiconductor Process Equipment
– SEMATECH DOC ID #: 06124825A-ENG (public)• Waste stream segregation:
– High concentration waste streams – easier to treat and facilitate recycling– Low concentration waste (<40%, depending of ultra pure water [UPW] system
parameters) can return for reuse
• Water use/reuse/recycling opportunities vary widely depending on facility parameters
• Accurate characterization, per the ISMI guideline, is a starting point
UPW
450 mmTool
Low concentration
Highconcentration
15 July 2009 78
450 mm Air Emissions Strategies• ISMI Environmental Characterization Guideline report as a baseline at
the 450 mm equipment demo phase– Title: Guideline for Environmental Characterization of Semiconductor
Process Equipment – SEMATECH DOC ID #: 06124825A-ENG (public)
• Replace in situ PFC/CVD cleaningwith remote plasma cleaning
• Consider non-PFC cleaning materials (F2, ClF3, etc.)
• Accelerate development of lower Global Warming Potentialetch processes
• Equipment suppliers have made significant progress and should apply 300 mm “lessons learned” to 450 mm– Accurate characterization, using the ISMI guideline, is a starting point;
collaboration will lead to success
15 July 2009 79
450 mm Carrier Handling
• Person guide vehicles (PGVs) or two-person lifts are recommended for FOUP and FOSB handling in development applications
• Manual material handling analysis per SEMI S8 should be used to determine the acceptability of two-person lifts
– FOUP weight with 25 wafers ~ 24 kg– Avoid awkward postures or extended reaching
Bad idea!
Better!BEST!
15 July 2009 80
450 mm ESH Success CriteriaProductionβα
Complete at receiving site
EquipmentSign Off
Requirement
Provide before delivery / start-up
Measured Utility Requirements
Provide before delivery / start-up
Combustible Materials Report
Complete during βphase; final before production
Environmental Characterization(Air, Water, etc)
Tools at IDMsTW Gen
Seismic Design Criteria
SEMI S23 Total Energy Report
Third Party SEMI S2 / S8 Reports
ISMI Safety Checklist
Equip.phase
Provide before delivery / start-up
Complete during βphase
Provide before delivery / start-up
Provide before delivery / start-up
CommentsEquip. Demos
Productionβα
Complete at receiving site
EquipmentSign Off
Requirement
Provide before delivery / start-up
Measured Utility Requirements
Provide before delivery / start-up
Combustible Materials Report
Complete during βphase; final before production
Environmental Characterization(Air, Water, etc)
Tools at IDMsTW Gen
Seismic Design Criteria
SEMI S23 Total Energy Report
Third Party SEMI S2 / S8 Reports
ISMI Safety Checklist
Equip.phase
Provide before delivery / start-up
Complete during βphase
Provide before delivery / start-up
Provide before delivery / start-up
CommentsEquip. Demos
Not required at this Equipment Phase
Accelerating Manufacturing Productivity
Copyright ©2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
Summary and Key Messages
15 July 2009 82
Key Messages - ISMI 450 mm Program• ISMI maintains its focus on planning a cost-effective 450 mm transition
– Intel, Samsung, and tsmc have not indicated a change in the 2012 target for 450 mm pilot line capabilities
• ISMI is making progress in building 450 mm infrastructure by working closely with device makers, process/metrology equipment suppliers, factory integration component suppliers, and silicon manufacturers.
– Progress has been made – more is required
• 450 mm single crystal, mechanical grade silicon wafer loans are now available from ISMI; supplier information turns have started to improve wafer quality
• ISMI has completed supplier selections for 6 critical process and metrology equipment required to initiate the generation of 450 mm test wafers and has engaged with >60 suppliers to identify opportunities to realize additional test wafer capabilities.
– 450 mm equipment will begin generation and distribution of test wafers in Q3’09
• Multiple suppliers have begun development of 450 mm mainframes to enable development of chamber-based processes
15 July 2009 83
Key Messages – ISMI 450 mm Program (continued)• 450 mm Equipment Performance Metrics (EPM) have been developed by ISMI, with
inputs from process and metrology equipment suppliers for 60 tool types, based upon ITRS specifications for 32 nm and 22 nm process generations
• The ISMI 450 mm Interoperability Test Bed (ITB), working in conjunction with carrier, loadport, and EFEM suppliers, has accelerated the progress of 450 mm physical interfaces and carrier standards, conducted reliability testing of factory integration components, and validated standards concepts
– Elimination of factory integration options and alignment on wafer pitch have been critical milestones
• 450 mm environmental performance targets are equivalent to 300 mm on a per-wafer basis for energy use, water use, and air emissions. ISMI has developed strategies to realize these goals.
• ISMI would like to discuss individual supplier interests for engagement in all aspects of the ISMI 450 mm Program. For additional information,Contact: Tom Jefferson, 450 mm Program Manager ([email protected])
15 July 2009 84
Improved ISMI 450 mm Website - FYI450 mm Guidelines • ISMI 450 mm Guidelines (PDF)
450 mm Equipment• 450 mm Equipment Performance Metrics (PDF) –
Jun. 2009 • 450 mm Test Wafer Generation Equipment
Requirements
450 mm Factory Integration• Interoperability Test Bed (ITB) Updates to the SEMI
450 mm IPIC (PDF)
450 mm Safety• 450 mm Equipment ESH Checklist 33551TD
450 mm Industry Briefings and Workshops• ISMI 450 mm Industry Briefing (PDF) - Dec. 2008• ISMI 450 mm Industry Briefing (PDF) - Jul. 2009
• One location for all ISMI 450 mm materials
• Latest Information, organized by topic
• URL: http://ismi.sematech.org/ wafersize/index.htm
15 July 2009 85
Questions and Discussion
ISMI – Accelerating Manufacturing Productivity