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Fig. 3.1 The first transistor. (Courtesy Bell Telephone Laboratories.)
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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Fig. 3.2 Types of transistors: (a) pnp; (b) npn.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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: (a) pnp;
: (b) npn
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Fig. 3.3 Forward-biased junction of a pnp transistor.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.4 Reverse-biased junction of a pnp transistor.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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Fig. 3.5 Majority and minority carrier flow of a pnp transistor.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.6 Notation and symbols used with the common-base configuration: (a) pnp
transistor; (b) npn transistor.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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Input section
Output section
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Fig. 3.6 (continued) Notation and symbols used with the common-base
configuration: (a) pnp transistor; (b) npn transistor.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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Fig. 3.7 Input or driving point characteristics for a common-base silicon transistor amplifier.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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Fig. 3.8 Output or collector characteristics for a common-base transistor amplifier.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.9 Reverse saturation current.
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Fig. 3.10 Developing the equivalent model to be employed for the base-to-emitter
region of an amplifier in the dc mode.
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Fig. 3.11 Establishing the proper biasing management for a common-base pnp
transistor in the active region.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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Fig. 3.12 Basic voltage amplification action of the common-base configuration.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.13 Notation and symbols used with the common-emitter configuration: (a) npn
transistor; (b) pnp transistor.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.13 (continued) Notation and symbols used with the common-emitter
configuration: (a) npn transistor; (b) pnp transistor.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
Copyright ©2006 by Pearson Education, Inc.
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Fig. 3.14 Characteristics of a silicon transistor in the common-emitter configuration: (a) collector
characteristics; (b) base characteristics.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.15 Circuit conditions related to ICEO.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.16 Piecewise-linear equivalent for the diode characteristics of Fig. 3.14b.
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Fig. 3.17 Determining ac and dc from the collector characteristics.
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Fig. 3.18 Characteristics in which ac is the same everywhere and ac = dc.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.19 Determining the proper biasing arrangement for a common-emitter npn transistor configuration.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.20 Notation and symbols used with the common-collector configuration: (a) pnp
transistor; (b) npn transistor.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.21 Common-collector configuration used for impedance-matching purposes.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.22 Defining the linear (undistorted) region of operation for a transistor.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.23 Transistor specification sheet.
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Fig. 3.23 (continued) Transistor specification sheet.
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Fig. 3.23 (continued) Transistor specification sheet.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.24 Curve tracer response to 2N3904 npn transistor.
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Fig. 3.25 Determining ac for the transistor characteristics of Fig. 3.24 at IC = 7 mA and VCE = 5 V.
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Fig. 3.26 Transistor tester. (Courtesy of B+K Precision.)
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Fig. 3.27 Checking the forward-biased base-to-emitter junction of an npn transistor.
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Fig. 3.28 Checking the reverse-biased base-to-collector junction of an npn transistor.
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Fig. 3.29 Various types of general-purpose or switching transistors: (a) low power; (b)
medium power; (c) medium to high power.
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Fig. 3.29 (continued) Various types of general-purpose or switching transistors: (a)
low power; (b) medium power; (c) medium to high power.
Robert L. Boylestad
Electronic Devices and Circuit Theory, 9e
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Fig. 3.29 (continued) Various types of general-purpose or switching transistors: (a) low
power; (b) medium power; (c) medium to high power.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.30 Transistor terminal identification.
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Fig. 3.31 Internal construction of a Fairchild transistor in a TO-92 package. (Courtesy Fairchild
Camera and Instrument Corporation.)
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Fig. 3.32 Type Q2T2905 Texas Instruments quad pnp silicon transistor: (a) appearance; (b) pin connections. (Courtesy Texas
Instruments Incorporated.)
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Fig. 3.33 Network employed to obtain the collector characteristics of the Q2N2222 transistor.
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Electronic Devices and Circuit Theory, 9e
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Fig. 3.34 Collector characteristics for the transistor of Fig. 3.33.
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Fig. 3.35 Ideal collector characteristics for the transistor of Fig. 3.33.
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Electronic Devices and Circuit Theory, 9e
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