CHEMICAL VAPOR DEPOSITION
Proceedings of the
Fourteenth International Conference
and
EUROCVD-11
Editors
Mark D. Allendorf
Sandia National Laboratories
Livermore, California
Claude Bernard
Laboratoire de Thermodynamique et Physicochimie MetallurgiquesENSEEG, Institut National Polytechnique de Grenoble
Saint Martin D'Heres, France
SPONSORED BY
THE HIGH TEMPERATURE MATERIALS, DIELECTRIC SCIENCE AND TECHNOLOGY,
AND ELECTRONICS DIVISIONS OF THE ELECTROCHEMICAL SOCIETY
THE AMERICAN CERAMIC SOCIETY
THE MATERIALS RESEARCHSOCIETY
U.S. DEPARTMENT OF ENERGY OFFICE OF INDUSTRIAL CONCEPTS
ADVANCED INDUSTRIAL MATERIALS PROGRAM
AIXTRON SEMICONDUCTOR TECHNOLOGIES GMBH
CENTRE EUROPEENDE RECHERCHES EN M&TALLURGIE DES POUDRES
LIBBEY-OWENS-FORD CO.
MKS INSTRUMENTS, INC.
MATS UK, LTD.
Proceedings Volume 97-25
THE ELECTROCHEMICAL SOCIETY, INC.,
10 South Main St., Pennington, NJ 08534-2896
CONTENTS
Preface iii
PART I—FUNDAMENTAL ASPECTS OF CVD:
THERMODYNAMICS, KINETICS,AND MECHANISMS
Quantum Chemistry: A Review of Ab Initio Methods and Their Use
in Predicting Thermochemical Data for CVD Processes
C. E Melius, M. D. Allendorf, and M. E. Colvin 1
Gas-Phase Kinetics in the TI-CL-H SystemF. Teyssandier and M. D. Allendorf 15
Different Applications of the CVD Thermodynamic Simulations in the
Ti-Si-N System: Oxidation and Microelectronics Materials
E. Blanquet, A.M. Dutrvn, C. Bernard, G. Llauro, and G. Hillel 23
Thermodynamic Study of the Hafnium-Carbon System for Hafnium Carbide
Chemical Vapour DepositionP. Sourdiaucourt, A. Derre, P. David, and P. Delhaes 31
The Reactions ofBC13 and NH3 Relevant to the CVD of Boron Nitride
A.H. McDaniel andM.D. Allendorf 40
On the Maturation of the Gas Phase in the CVD of Pyrocarbon from C3H8 as
Assessed by FTTR In-Situ Analysis and Kinetic StudyO. Feron, F. Langlais, and R. Naslain 49
Growth Kinetics of Chemically Vapor Deposited Silica Films from Silane/Oxygen Mixtures
F. Ojeda, A. Castro-Garcia, C. Gomez-Aleixandre, andJ.M. Albella 57
Contribution of Gas Phase Reactions to the Growth Rate of LPCVD SiliconFilms in the Temperature Range from 500 to 550°C
C. Cobianu, P. Cosmin, M. Modreanu, D. Dascalu, and J. Holleman 65
Reaction Scheme for the Deposition of Gallium Nitride Based on Pyrolysisof Ammonia Chloride Complex
S.E. Alexandrov, D.M. Krasovitskiy, andA.Yu Kovalgin 73
In-Situ Spectroscopic Investigation of the Gas Phase Oxidation and Hydrolysisof Dimethyltin Dichloride and the Correlation with APCVD Sn02 Growth
H.E. Sanders 81
Investigation of Thermolysis Mechanism of Gas Phase of Ni(II) Chelates byMass Spectrometry
PP. Semyannikov, V.M. Grankin andl.K. Igumenov 89
Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH3T. Watanabe, A. Ichikawa, M. Sakuraba, T. Matsuura, and J. Murota 97
Depth Profiling of the Early Stages of High Temperature CVD of TiN and
Moderate Temperature CVD of Ti(C,N) by Use ofAuger Electron SpectroscopyH.R. Stock, C. Jarms, H. Berndt, B. Wielage, andA. Hoftnann 105
vii
Sticking Coefficient in Film Profile Prediction for Chemical Vapor Deposition
T. Maruizumi, J. Ushio, Y. Takemura, andN. Kobayashi 115
Water Vapor and Chlorine Effects on the Epitaxial Growth of SiGe Films by CVD
I.M. Lee, A. Jansons, and C.G. Takoudis 123
Effects of HC1 Readsorption on Film Growth in Atomic Layer CVD ofTi02H. Siimon, J. Aarik, and T. Uustare 131
Routes of Thermal Decomposition of Metal b-Diketonates
A.E. Turgambaesa, A.F. Bykov, andl.K. Igumenov 139
Kinetic Study ofLow Pressure Chemical Vapor Deposition of Si02 UsingTetraethoxysilane (TEOS)
J.ArndtandG. Wahl 147
Influence of the NH3/TiCl4 Ratio on the Formation ofTiN Layers by RTLPCVD
fromTiCl4-NH3-H2A. Bouteville, L. Imhqff, and J.C. Remy 155
Simulation of a Diamond Oxy-Acetylene Combustion Torch Reactor with a
Reduced Gas-Phas and Surface Mechanism
M. Okkerse, R.J.H. Klein-Douwel, M.HJ.M. de Croon, C.R. Kleijn,
J.J. terMeulen, G.B. Marin, andH.E.A. vandenAkker 163
Chemical Reactions in Titanium Plasma-Assisted Chemical Vapor DepositionY. Oshita and K. Watanabe 171
Some Experimental Regularities of Polycrystalline Boron CVD and
Their Chemical and Transport Kinetics Correlations
A.M. Tsirlin, V.G. Gerlivanov, E.K. Fiorina, T.V. Fedorova and A.M. Tsirlin 179
High Energy Photon Assisted Rapid Isothermal Processing Based Chemical
Vapor Deposition
R. Singh, R. Sharangpani, andY. Chen 187
An Improvement in the Behavior of LPCVD Reactors: The Dead Zones Reducers
H. Gris, B. Caussat, H. Vergnes, andJ.R Couderc 194
PART II—MODELING CVD PROCESSES AND PHENOMENA
LPCVD Reactor Modeling: Consequence for Film Structure AnalysisJ. P. Couderc 202
Turbulence and its Influence on Mass Transfer in a Rotating Disk CVD Reactor
H. Van Santen, C.R. Kleijn, andH.E.A. Van DenAkker 214
A Three-Dimensional Computational Fluid Dynamics Model of a Horizontal
Rotating Disk CVD Reactor
S. Kommu and G.M. Wilson 222
Viii
Modelling and Process Optimisation in a Radial Flow Multiwafer MOVPE Reactor
T. Bergunde, M. Dauelsberg, L. Kadinski, Yu. N. Makarov, G. Strauch,
and H. Jurgensen 230
Hydrodynamics and Mass Transfer Modelling for RTP Reactors
S. Soukane and P. Duverneuil 238
Modelling and Design ofInjection Feed Multiwafer LPCVD Reactors
L.M. Zambov, C. Popov, and G. Beshkov 246
Vertical Integration of CVD Process Models
M.K. Gobbert, T.P Merchant, L.J. Borucki, and T.S. Cale 254
Defect Formation and Macroscopic Modelling of Silicon Carbide
Sublimation Process
M. Pons, E. Blanquet, C. Bernard, J.M. Dedulle, M. Anikin, K. Chourou,
andR. Madar 262
Microstructure Evolution in Thin Films: Atomistic Simulations
V. Mahadev, A. Challa, and T. Cale 270
Simulation of Diamond-Like Carbon Deposition in PECVD Reactors
M. Masi, C. Cavallotti, andS. Carra 278
Numerical Modelling ofA1N Growth in a Hot Wall CVD Reactor
A. Dollet, Y. Casaux, andR. Rodriguez-Clemente 286
Plasma CVD of Germanium from Germane: Theoretical Modeling of the
Experimental Kinetic and Mechanistic Data
T. Bolom, F. Glatz, M.G.J. Verprek-Heijman, andS. Veprek 294
PART III—HARD COATINGSAND CERAMICS
Development of Multi-Component CVD CoatingsM.L. Auger and V.K. Sarin 302
Superhard Nanocrystalline Transition Metal-Amorphous Si3N4 Composites:Comparison of HF with DC Plasma CVD and Stability of the Nanostructure
S. Veprek, A. Niederhofer, P. Nesladek, and F. Glatz 317
Nanocrystalline Diamond Films from Argon Microwave Plasmas: Phase Purity,Microstructure, Growth Mechanism, and Applications
D.M. Gruen, A.R. Krauss, D. Zhou, T.G. McCauley, T.D. Corrigan,R.P.H. Chang, and G.M. Swain 325
Low Temperature CVD of Nanocrystalline Molybdenum Carbide Films
J. Lu and U. Jansson 333
Activation of TaC Filament at High Methane Concentrations for Diamond DepositionD.M. Li, T. Mantyla, R. Hernberg, and J. Levoska 341
IX
DLC and SiOx Coatings Deposited by Low Frequency PECVD in a Pilot- Scale Reactor
E Schuster, C. Chabrol, S. Anderbouhr, L. Filhol, and G. Piet 349
TiN and (Ti^Al^N Films Obtained by a Low Pressure Chemical VaporDeposition Process
S. Anderbouhr, E. Blanquet, V. Ghetta, and C. Bernard 356
Chemical Vapour Deposition ofTitanium Nitride for Corrosion Protection in
Molten Carbonates
M. Keijzer, P.JJ.M. van derPut, J. Schoonman, S.-E Au, K. Hemmes,
and HJ.H.W. deWit. 364
High Temperature Oxidation Mechanism of TiN-TixSiy CVD CoatingsG. Lauro, R. Hillel, E Gourbilleau, C. Monty, and E Sibieude 369
The Increase of the Wear and Corrosion Resistance of Ti(NCO) Layerby Annealing in Plasma Nitrogen Atmosphere
J.R. Sobiecki and J.R.Wierzchon 376
Deposition of SiOx Layers on Moving Polymer Films Using Photo-CVDat Atmospheric Pressure
W. Decker and G. Wahl 385
Electrochemical Vapor Deposition of Thin Dense Zirconia-Yttria-Ceria Membranes
J. Han and Y.S.Lin 393
Aerosol Size Effects in Combustion CVD
W.B. Carter, G.W. Book, andD.W. Stollberg 401
Combustion CVD-Deposited Oxidation Resistant CoatingsJ. Hampikian, B.C. Valek, andM.R. Hendrick 409
Deposition and Characterization of Zr02 and Yttria-Stabilized Zr02 Films
Using Injection-LPCVDN. Bourhila, F. Felten, J.R Senateur, F. Schuster, R. Madar, and A. Abrutis 417
Ceramic Coating of Metal Tube Inner Surfaces by OMCVD
/. Poirier, Y.B. Wang, M. Ducarroir, and F. Teyssandier 425
Preparation and Properties of Ceramic Micro-Coils by CVD Process
S. Motojima, T. Hamamoto, N. Ueshima, Y. Kojima, andH. Iwanaga 433
RPECVD Boron Nitride Layers from Borazine as Single-Source Precursor
M.L. Kosinova, YM. Rumyantsev, N.I. Fainer, andEA. Kuznetsov 441
A Design Policy of the SiC CVD Reactor Based on the Chemical
Reaction Kinetics of DichlodimethylsilaneT. Takeuchi, Y. Egashira, and H. Komiyama 447
Hard Protective Coatings from New Bicyclo [2.2.1]Heptanolates of
Dicyclopentadienyl Hafnium
S.V. Volkov, A.V. Grafov, G.A. Battiston, L. Koval, R. Gerbasi,
M. Porchia, P. Zanella, and E.A. Mazurenko 455
X
Applications of CVD Transparent Conducting Oxides Deposited on a
Float Glass Manufacturing Line
R.J. McCurdy andM.J. Soubeyrand 463
Chemical Vapor Deposition on the Bi-O System
M. Schuisky andA. Hdrsta 471
Influence of Barrier Diffusion Layers on Protective Properties of Heat-Proof
Coatings for Carbon Materials
S.G. Andryushin, A.V. Kasatkin, andA.E. Bekhly 479
PART IV—CHEMICAL VAPOR INFILTRATION
AND INTERFACIAL COATINGS
CVD and CVI Processes of Carbon Materials
P. Delhes 486
Thermodynamic Analyses ofthe Chemical Vapor Infiltration in the B-N-Si
and B-N-P Systems
M. Leparoux, Y. Boussant, and L. Vandenbulcke 496
Constitution and Deposition Mechanism of Hexagonal Boron Nitride
Formed by CVD from TrimethylborazineA. Jorg, E. Zimmermann, M. Schierling, Cremer, R, and D. Neuschiitz 504
Enhanced Deposition of C from C2H4-H2 Mixtures in the Presence of Chlorosilanes
S.V. SotirchosandI.M. Kostjuhin 512
Finite Element Modeling of Chemical Vapor Infiltration
C. Descamps and G.L. Vignoles 520
A Two-Dimensional Model of Chemical Vapor Infiltration with Radio
Frequency HeatingV. Midhas andD.J. Economou 528
Optimization of CVI Processes
J.Y. Ofori and S.V. Sotirchos 536
Conditions for Maximum Centerline Deposition Rates in Composites Fiber
Coating by Chemical Vapor Infiltration
S.K. Griffiths and R.H. Nilson 544
Preparation of Gas-Permeable SiC Shape by Pressure-Pulsed Chemical
Vapour Infiltration into Carbonized Cotton-Fibre Preforms
K Ohzawa, A. Sadanaka, and K. Sugiyama 552
Development of a Scaled-Up CVI System for Tubular Geometries
T.M. Besmann, J.C. McLaughlin, K.J. Probst, T.J. Anderson and T.L. Starr 560
Recent Advances in Rapid Dendification ofThick, Refractory Composites byInductively-Heated, Thermal-Gradient, Flowing-Gas, Isobaric, Chemical Vapor Infiltration
I. Golecki 568
xi
Chemical Vapor Deposition of Sn02 Films Within the Pores of Vycor Substrates
for the Control of Their Porosity
E.A. Magoulianiti, K. Beltsios, D. Davazoglou, G. Romanos, andN. Kanellopoulos 576
Continuous Coating of Ceramic Fibres by Industrial-Scale Laser
Driven CVD: Process Characterisation
V Hopfe, B. Dresler, K. Schoenfeld, R. Jaeckel, and O. Throl 584
Kinetics of Chemical Vapor Depostion of Titanium Nitride
N. Popovska, S. Poscher, P. Tichy, G. Emig, andH. Ryssel 592
MOCVD of Noble Metal on Micro Fibers
B. Gmehling, G. Diesner, K. Holeman, and G. Emig 600
Chemical Vapor Deposition of Hafnium Carbide on Carbon Substrates
V. Wunder, N. Popovska, and G. Emig 608
PARTV—DIAGNOSTICS AND CHARACTERIZATION
In Situ Optical Diagnostics of Surface Chemistry and Film Growth
P. Hess 616
Characterization and Control of the LPCVD Polysilicon Using EllipsometryL. Asinovsky, M. Schroth, F. Shen, and J. Sweeney 628
Thin Film Measurements by Spectroscopic Ellipsometry Over an Extended Range
J.N. Cox, J.M. Hutchinson, K.K.D. Lee, B. Sheridan, R. Wong, andl.-C.J. Yang 636
GaAs Plasma Processing Monitored by In Situ EllipsometryM. Losurdo, P. Capezzuto, and G. Bruno 644
Emission Infared Spectroscopy as an In-Situ Probe of CVD at High Gas Pressures:
The Epitaxial Silicon CVD
P. Christopher and C.G. Takoudis 652
Gas-Phase FTIR Analysis and Growth Kinetics of Ti02 in a Hot Wall LP-MOCVD Reactor
G.A. Battiston, R. Gerbasi, M. Guerra, andM. Porchia 660
In-Line Metrology: Implementation of a Novel FTIR Thickness Monitor
in the EPI Centura Silicon Deposition Cluster Tool
A. Waldhauer, P. Rosenthal, S. Charpenay, W. Zhang, and P. Comita 668
In-Situ Raman Spectroscopy During Laser-Induced Chemical Vapor Depositionof Silicon and Silicon Carbonitride Thin Films
W.F.A. Besting, A. Goossens, and J. Schoonman 676
Analysis of Condensed Exhaust Byproducts from Atmospheric Pressure Silicon Epitaxy
P. Comita, D. Carlson, Y. Chang, K. Klink, A. Waldhauer, andR. Ranganathan 684
Correlation Between the Spectroscopic Emission Behavior of an ArgonTetramethysilane Radiofrequency Plasma and the Deposits
M. Andrieux, J.M. Badie, C. Bisch, andM. Ducarroir 693
xii
A Study of Remote Plasma-Assisted CVD of Aluminium and Gallium OxynitrideFilms by In Situ Optical Emission Spectroscopy
A. Kovalgin andN. Lermontova 701
Gas Temperature Profile in a Microwave PACVD Reactor From H2 Molecular
Rotational Lines
M. Andrieux, J.M. Badie, C. Bisch, and M. Ducarroir 709
Holographic Interferometry of Temperature Distribution in a RTP Reactor
Y.P. Rainova, K.I. Antonenko, J. Pezoldt, A. Schenk, and G. Eichhorn 717
Formation of InAs/GaSb and GaSb/InAs Interfaces
A. Tahraoui, M. Nouaoura, J. Bonnet, L. Lassabatere, F. Touhari,
G. Leveque, and P. Girard 725
Effect of Tellurium on InAs/GaSb(100) Interfaces
A. Tahraoui, M. Nouaoura, M. Rouanet, J. Bonnet, L. Lassabatere, F. Touhari,
and P. Girard 733
Ion Beam Analysis of Ternary Silicides Me-Si-N (Me=Re,Ta,Ti,W) Thin Films
Used as Diffusion Barriers in Advanced Metallization
R. Somatri-Bouamrane, N. Chevarier, A. Chevarier, A.M. Dutron, E. Blanquet,and R. Madar 741
Surface Roughness Evaluation of CVD Doped Oxide Films for Advanced
Deep Sub-Micron Semiconductor ApplicationsM. Ilg, R. Ploessl, J. Stuber, R. Conti, D. Cote, J. Gambino, D. Tobben,
and M. Kirchoff. 749
Ce02 Thin Films on Single Crystal YBa2Cu307 Substrates: The Effect of
Ce02 Film Thickness on the Surface MorphologyM. Becht, J.G. Wen, T. Morishita, andK. Tanabe 756
AFM Observations of the Evolution of the Surface Morphology in MOCVD: Zr02 LayersG. Garcia, A. Figueras, L. Vazquez, J.M. Albella, and J. Llibre 764
CVD Growth of TTF-TCNQ Thin Films on KC1 (001): Mechanisms of Texture
J. Caro, J. Fraxedas, andA. Figueras 772
(AIN-Si3N4) CVD Codeposits Oxidized at High Temperature:An Electron Microscopy Study
A. Mazel, P. Marti, R. Fourmeaux, A. Armas, and C. Combescure 780
Electrical and Structural Characterization of Sn02-APCVD Thin Films
A.I. Kleps, G.A. Battiston, R. Gerbasi, P. Guerriero, and C. Podaru 788
Optical Properties of Undoped, Phosphorous Doped and Oxidized LPCVD
Polycrystalline Silicon Films Obtained by Transmission and FTIR Measurements
D. Davazoglou, D. Kouvatsos, and E. Valamontes 796
Optical Properties of Thin Films Bi2Te3/Si02/Si and Bi2Te3/Si by HWEE.H. Kaddouri, F. Mahoukov, S. Charar, X. Gratens, S. Benet,
M. Ferhat, S. Sal Carso, and J.C. Tedenac 804
xiii
The Optical and Structural Properties of Ta205 Films Produced by MOCVDH. Li, W.A. Dawson, J. Roose, B.D. Hoppert, G. Grobe, and E. Leibenguth 811
Relation Between the Lattice Constant and the Chemical Compositionof Ti(NCO) Layers Produced by PACVD Method
J.R. Sobiecki and J.R. Wierzchon 817
PARTVI—METALLORGANIC CHEMICAL VAPOR DEPOSITION -
GENERAL TOPICS
Design of Precursors for Conventional and Aerosol-Assisted CVD of
Electroceramics Based on Oxides
L.G. Hubert-Pfalzgraf 824
New Volatile Cluster Niobium Thio-Complexes as Precurses for CVD Process
M.N Sokolov, OA. Geras'ko, A.P. Majara, P.P. Semyannikov,
V.M. Grankin, S.V.Belaya, andl.K. Igumenov 836
Second-Generation Metal Precursors: New Volatile Thermally Stable
Metal P-Diketonate Glyme Adducts and Some Challenging MOCVD Applications
G. Malandrino andl.L. Fragalla 844
Structural Approaches to the Synthesis of the Heterometallic Complexes Useful in CVD
A.A. Drozdov and S.I. Troyanov 852
Barium Dipivaloylmethanate as a Promosing Precursor for CVD
A.F. Bykov, A.E. Turgambaesa, and I.K. Igumenov 857
Chalcogenide Carbonyl Clusters H2Fe3X(CO)9 (X=Se, Te) and Their
Mo- and W-Substituted Heterometal Derivatives: the New Precursors
for Functional Materials Synthesis by CVD
S.N. Konchenko, I.K. Igumenov, P.P. Semyannikov, and V.M. Grankin 865
l,10-phenantrolinetris[pentanedionato-2,4] Cerium(III) as a MOCVD Precursor
R. Nichiporuk, N. Kuzmina, I. Korsakov, A. Molodyk, andA. Ilyukhin 872
Volatile Lathnide Diethyldithiocarbamates as Precursors for Lanthanide
Sulfide Film Deposition
N.P. Kuzmina, R. Ivanov, S. Paramonov, andL.1. Martynenko 880
Packing in Crystal Structures of Metal b-Diketonates Used in MOCVD
and its Correlation to Volatility
S.I. Troyanov, N.P. Kuzmina, I.E. Soboleva, andN.V. Chugarov 886
A New Approach to Modeling of Evaporation Kinetic of Volatile Coordination
Compounds Used as MOCVD Precursors
N. Kuzmina, T. Chemleva, E. Isaeva, I. Ijina, I. Korsakov, N. Chugarov, and G. Wahl 893
Study by In Situ FTIR Spectroscopy ofthe Roles of Homogeneous and
Heterogeneous Reactions in the Decomposition ofPrecursors
for the MOCVD of High Temperature SuperconductorsG.G. Condorelli, M.L. Hitchman, A.Y. Kovalgin, andS.H. Shamlian 901
XIV
Reaction Chemistry of InGaAsP MOCVD Studied with FTIR Gas
Monitoring and Numerical Analysis on Growth Kinetics
M. Sugiyama, Y. Shimogaki, S. Sudo, Y. Nakano, K. Sugawara,
K. Tada, andH. Komiyama 909
Ozone Chemistry in Atmospheric Pressure Chemical Vapor Depositionof Silicon Dioxide Using Tetraethoxysilane and Ozone
K. Ikeda andM. Maeda 917
Surface Diffusion Enhancement by Heterovalent Doping in MOCVD of Oxide Films
I.E. Graboy, A.R. Kaul, N.V. Markov, V.V. Maleev, I.E. Korsakov,
O.Y. Gorbenko, and A.A. Molodyk 925
MOCVD of Metal and Metal Dioxide Films of Ruthenium and
Osmium Using a Volatile Precursor
Y. Senzaki, D. Colombo, W.L. Gladfelter, and F.B. McCormick 933
Carbon-Free Cr Metal Thin Films Deposition at Low Temperature by MOCVD
F. Maury, L. Gueroudji, C. Vahlas, S. Abisset, andL. Pelletier 944
Vanadium Oxide Thin Films From Vanadyl Precursors
D. Barreca, L. Depero, E. Franzato,G. A. Rizzi, L. Sangaletti,
E. Tondello, and U. Vettori 952
MOCVD Of Zirconia Films Using Beta-Diketonates
M. PulverandG. Wahl 966
W03 LPCVD Thin Films for Integrated Gas Sensor ApplicationsD. Davazoglou, K. Georgouleas, A. Moutsakis, E. Valamontes, andD. Tsamakis 968
Deposition and Microstructure of Thin MOCVD Zirconia and Ceria Films
M. Morstein, I. Pozsgai, andN.P Spencer 976
Low Temperature Chemical Vapor Deposition of Group-III-NitridesR.A. Fischer and W. Rogge 984
MOCVD of RBa2Cu307_§ (R=Lu, Ho, Y and Gd) Superconducting Thin Films
S.V. Samoylenkov, O.Y. Gorbenko, A.R. Kaul, S.V. Papucha,N.A. Mirin, V.V. Maleev, I.E. Graboy, A.R. Kuzhakhmetov, andS.A. Zhgoon 990
Study ofYBa2Cu307.y Films by Metalorganic Chemical VaporDeposition Using Liquid Sources
Y. Yoshida, Y. Ito, Y. Yamada, H. Nagai, Y. Takai, I. Hirabayashi, and S. Tanaka 998
Synthesis ofYBa2Cu307.x Tapes for High Current Applications by MOCVD
U. Schmatz, F. Weiss, L. Klippe, O. Stadel, G. Wahl, D. Selbmann,M. Krellmann, L. Hubert-Pfalzgraf, H. Guillon, J. Pena, andM. Vallet-Regi 1005
Deposition of BaTi03 Layers by Injection MOCVDF. Weiss, J. Lindner, J.-P. Senateur, B. Ploss, L. Hubert-Pfalzgraf, and S. Daniele 1013
Preparation of Ferrite Thin Films by PE MOCVD Process and InvestigationofTheir Properties
VP. Ovsiannikov, G.V. Lashkarev, Y.A. Mazurenko, andM.E. Bugaeva 1020
XV
ZnTe and CdTe Epitaxial Growth by MOCVD using Plasma Hydrogen Radical
Y. Hatanaka, D. Noda, M. Niraula, T. Aoki, and Y. Nakanishi 1027
Organometallic CVD of 6-CoGa and Coin Thin Films from
Organometallic Single Source Precursors
R.A. Fischer and W. Rogge 1034
PARTVII—DEPOSITION OF FERROELECTRICMATERIALS FROM METALLORGANIC PRECURSORS
MOCVD of Ferroelectric CapacitorsS.B. Desu, S. Ramanathan, and Y. Zhu 1043
MOCVD of Ferroelectric Thin Films
C. Schmidt and E.P. Burte 1055
Chemical Vapor Deposition of High Quality (Ba, Sr)Ti03 Thin Films
Using Individual Vaporizing Liquid Source Supply SystemM. Kiyotoshi and K. Eguchi .....1063
Thin Films ofPbTi03 Deposited by Aerosol-CVD
J.L. Deschanvres and J.C. Joubert 1071
Multiwafer MOCVD Systems for Ferroelectrics
M. Deschler, E. Woelk, D. Schmitz, G. Strauch and H. Jiirgensen 7079
Epitaxial BaTi03 Films Prepared by Single-Source MetalorganicChemical Vapor Depositioan for Electro-Optical Applications
J. Zhao, V Fuflyigin, E Wang, L.D. Zhou, RE. Norris, L. Bouthilette, and C. Woods 1085
La1.xSrxCo03 Thin Film and PbTi03/La1_xSrxCo03 Heterostructures
Prepared by Single Source MOCVD
O.Y. Gorbenko, V.A. Amelichev, J.A. Rebane, andA.R. Kaul 1093
Giant Magnetoresistive Thin Films of (La,Pr)0 7(Sr,Ca)0 3Mn03 Preparedby Aerosol MOCVD
O.Y. Gorbenko, N.A. Babushkina, LM. Belova, A.A. Bosak,
V.A. Amelichev, A.R. Kaul, and G.Wahl 1101
Phase Formation in CVD-Grown SrTi03 and (BaSr)Ti03 Films
M. Yoshida, H. Yabuta, S. Sone, H. Yamaguchi, K. Arita, andY. Kato 1109
The Relationship Between Deposition Characteristics and Propertiesof SrTi03 Films in ECR-PEMOCVD Process
J.S. Lee, J.S. Bae, H.W. Song, B.H. Jun, J. Gorman, Z.-T. Jiang, andK. No 1117
PARTVIII—DIELECTRIC MATERIALS
Dielectric Materials and Insulators for Microelectronics
H. Treichel, G. Ruhl, R. Wiirl, P. Ansmann, C. Miiller, andM. Dietlmeier 1125
XVI
Dielectric Oxide Nanolaminates Deposited by Atomic Layer Epitaxy
K. Kukli, M. Ritala, andM. Leskela 1137
Novel Aerosol Assisted CVD Technology For Oxide Film DepositionD. Narducci and F. Canali 1145
In Situ Growth of Oxide Thin Film Heterostructures by Band Flash
Evaporation MOCVD
A. Molodyk, M. Novozhilov, I. Graboy, O. Gorbenko, I. Korsakov, and A. Kaul 1152
Film Formation by a New CVD Process Using Ionization of TEOS
M. Adachi, T. Hayasi, T. Fujimoto, and K. Okuyama 1160
Optimization of Si02 Atmospheric Deposition in Continuous Belt Systems
M. Masi, S. Carra, G. Vaccari, and D. Crippa 1167
Thermochemistry and Composition of LPCVD Silicon Oxide Films
Grown from NH3TEOS Mixtures
C. Vahlas, D. Davazoglou, V.E. Vamvacas, and P. de Parseval 1175
Evaluation of Fluorinated Si02 Films Deposited in HDP(ICP) Reactor
for the Application of Low Dielectric Constant Inter Metal Dielectric in ULSI Circuits
A.N. Velaga, C.S. Pai, E.P. Martin, andS.C. Vitkavage 1183
Comparison of Fluorosilicate Glass Deposition Chemistries with Film PropertiesM. Shapiro, V. Rao, A. Ricci, S. Cohen, H. Gotts, and J. Wong 1191
The Analysis of Optimized Dopant Concentration Range in BorophosphosilicateGlass Films for VLSI and ULSI
V.Y. Vassiliev and J.-Z. Zheng 1199
Preparation of High Quality SiNx Films Deposited by Remote Plasma CVD
by Using TDMAS
T. Aoki, T. Ogishima, Y. Nakanishi, Y Hatanaka, andAM. Wrobel 1207
Mechanical and Elecrical Features ofAmorphous SiCxNy CVD CoatingsA. Bendeddouche, M. Nadal, A. Haidoux, andR. Hillel 1215
Deposition of SiBCN-Films from a Monomeric Borosilazane
M. Haltrich, G. Wahl, J. Arndt, andR. Suchentrunk 1223
Hydrogen Content and Permeability ofThin CVD Silicon Nitrideand Oxynitride Layers
M. Kirchhqff, D. Cote, M. Hauf, S. Nguyen, and W. Hoesler 1230
Deposition of TI02 Thin Films by Microwave Plasma MOCVD Method
K. Itoh, K. Matsumoto, and O. Matsumoto 1238
Low Temperature CVD OF Tantalum Oxide Films
X. Li, M.L. Hitchman, and S.H. Shamlian 1246
xvii
PART IX—ELECTRONICAND OPTICAL MATERIALS
Chemical Vapor Deposition of Column IV Heterostructures: Growth and
DeviceApplicationsJ.L. Hoyt, TO. Mitchell, K. Rim, D. Singh, and IF. Gibbons 1254
Study of PbEuSe/PbSe/CaF2/Si(lll) MBE Heterostructures
G. Breton, M. Naouaoura, C. Gautier, M. Cambon, X. Gratens, S. Charar,
M. Averous, andF. Touhari 1266
Effect of In Situ H2 Plasma Pretreatment on the Low Temeprature Microcrystalline(|ic-Si:H) Silicon Film Deposited on Amorphous Si02 and SiNx:H Surfaces
Y-B. Park andS.-W Rhee 1274
Structural and Optical Characterization of Polycrystalline Silicon Films Depositedby Single Wafer CVD
A. Sassela, A. Borghesi, G. Amore, G. Tallarida, S. Spiga, F. Cazzaniga,G. Ferroni, and G. Queirolo 1282
Restructuration-Doping Process Near the Poly Si/Si02 Interface on Silicon
During the Phosporus Diffusion
F Gaiseanu, C.A. Dimitriadis, J. Stoemenos, C. Postolache, D. Tsoukalas,
D. Kruger, andE. Tsoi 1289
Remote-PECVD of aSi:H and muc-Si:H Films Using Alternative Doping Sources
R. Tews, G. Suchaneek, and A. Kottitz 1297
Remote-PECVD of Nanocrystalline Silicon Films by Alternating Depositionand Hydrogen Etching Sequences Using a VHF Resonant Plasma Source
G. Suchaneek, M. Albert, T Blum, and A. Kottwitz 1305
Hydride Gas Generator
R. Gordon and F. Chen 1313
A Study of Etching Mechanism in Silicon-HCl System Using Fast Wafer Rotation
T. Kataoka, Y Sato, and T Ohmine 1319
Photoluminescence of SiGe QuantumWells Grown by an Ultraclean LPCVD
System and Heat-Treated
K. Fujinaga and M. Shibuya 1327
Atomic Layer Control of Phosphorus Doping During LP(RT)CVD of SigeB. Jillack, J. Schlote, D. Wolansky, D. Kruger, and G. Ritter 1333
Deposition of LPCVD Amorphous Silicon Thin Films With a Low Content
of Germanium: Crystallization and Electrical Characteristics,"D. Briand, K. Kis-Sion, T Mohammed-Brahim, M. Sarret, F. Le Bihan,L. Haji, and O. Bonnaud 1340
Selective Epitaxial Growth of SiGe Films in LPCVD Reactor Systems-Characterization of SiGe Films by Ellipsometry
l.M. Lee, W.C. Wang, M.T.K. Koh, J.R Denton, C.G. Takoudis, E.R Kram,
and G.W. Neudeck 1348
xviii
Phosphorus Doping Effects on Si!_xGex Epitaxial Film Growth in the
SiH4-GeH4-PH3 Gas System Using Ultraclean LPCVD
C.J. Lee, M. Sakuraba, M. Ishii, T. Matsuura, J. Murota, I. Kawashima,
andN. Yabumoto 1356
Furnace Silicon Oxynitridation in Nitrous Oxide Ambients
S. Singhvi and C.G. Takoudis 1364
Monolayer Scale Analysis of Ga and As Distributions in MOVPE-Grown
InP/InGaAs/InP Single Quantum-Wells by X-Ray CTR SpectroscopyY Takeda, M. Tabuchi, H. Hamamatsua, and S. Ichiki 1372
Studies on Lattice Match and Internal Strain Aspects of GaxIn]_xAsyPi_yQuaternary System Grown on InP Substrate
V.N Mani 1379
Controlling Arsenic Autodoping Via Clustered HF Pre-Clean and Low-
Temperature Epitaxial Deposition CapR. Wise, F.S. Johnson, D.F. Frystak, K.E. Vwlette, N.E. Tidwell, andE. Forest 1386
Precursors in a Deposition of GaN Thin Films by Microwave Plasma MOCVD
N. lhashi, K. Itoh, and O. Matsumoto 1394
High Density Nucleation of Diamond on Mirror-smooth Si via Hot Filament CVD
Z.Lin 1402
Initial Stages of 6-SiC Growth by Chemical Vapor Deposition on an Ultrathin
SiC Buffer Layer on Si(100)
G. Ferro, V. Thevenot, H. Vincent, Y. Monteil, and J. Bouix 1409
Low Temperature Deposition of SiC Thin Films on Polymers Surface by ECRPlasma CVD
K. Sano, M. Nomura, H. Tamamaki, andY. Hatanaka 1417
ALE Growth of SrS^ Thin Films by Substituting Surface Sulfur with
Elemental Selenium
J. Ihanus, M. Ritala, andM. Leskeld 1423
Single-Source CVD Precursors for CdS/Cu(I) Thin Solid Films and
CdS-Cu2S Heterostructures
S.M. Zemskova, S.V. Sysoev, L.A. Glinskaya, R.F. Klevtsova,
S.A. Gromilov, and S.V. Larionov 1429
PECVD CdS and Cu2S Thin Films From Sulphur-Containing Single-Source Precursors
N. Fainer, Y.M. Rumyantsev, M.L. Kosinova, and F.A. Kuznetsov 1437
Modeling and Experimental Validation ofZnS and ZnSe Epitaxial Growth• in a Vertical MOVPE Reactor
C. Thiandoume, D. Angermeier, and O. Gorochov 1443
Study ofthe Phase States of Zn-Eu-S Thin Films Obtained by CVD Method
V.G. Bessergenev, E.N. Ivanova, Y.A. Kovalevskaya, andI.G. Vasilieva 1451
xix
Plasma-Enhanced Chemical Vapour Deposition ofAmorphous AsxSE100.x Films
P Nagels, R. Callaerts, and RMertens 1459
Modified Plasma CVD in Atmospheric Environment
R. Moss, R. Lewis, J. Olson, D. Hunt, andX.W. Wang 1467
CVD of Tungsten Oxides
P. Tagstrom, H. Hogberg, and U. Jansson 1475
Preparation and Characterization ofW03 - Based Electrochromic Cell SystemD.S. Gogova and K.A. Gesheva 1482
Deposition ofV205 Storage Layers for Electrochromic Devices by PE-MOCVD
C.IMA. Spee and G. Kirchner 1490
YxBayCuz07 Solid Solutions and Oxygen Treatment
G.D. Nipan, T.N. Kol'tsova, K.S. Gavrichev, and P. Manca 1498
Structure and Morphology of Doped Lanthanum Manganites Grown by LD-MOCVD
E.S. Gillman, M. Carris, C. Smith, andK.-H. Dahmen 1506
PART X—CHEMICALVAPORDEPOSITION OF METALS
Chemical Vapor Deposition Copper Interconnections and ElectromigrationC.-K. Hu and S.K. Reynolds 1514
Cuprisation of Polymide and Polyetherimide by Chemical Vapour DepositionM.L.H. terHeerdt, P.J.J.M. van derPut, A. Goossens, A.D. Kuijpers,and J. Schoonman 1524
Cu(thd)2 as Copper Source in Atomic Layer EpitaxyP. Mdrtensson andJ.-O. Carlsson 1529
Thermal Conversion of Copper (II) 6-Diketonates on the Surfaces of Different TypesA.E. Turgambaeva, A.F. Bykov, and IX. Igumenov 1537
Plasma Assisted Chemical Vapor Deposition of Aluminum for ULSI Metallization
D.-C. Kim, B.-Y. Kim, B.-L Lee, andS.-K. Joo 1545
FT-IR Diagnostics of Gas Phase Reactions and Effect of Carrier Gases in the Metal-
Organic Chemical Vapor Deposition ofAluminum from Dimethylethylamine Alane
J.-Y. Yun, M.-Y. Park, andS.-W. Rhee 1551
The Barrier Characteristics ofChemical Vapor Deposited Amorphous Tungstenwith In Situ Nitrogen Plasma Treatment
K-M. Chang, I-CDeng, T-H. Yeh, C-W. Shih, andS-C. Chien 1559
Programmed Rate and Optimal-Control Chemical Vapor Deposition of TungstenJ. Kristof, L. Song, K. Tsakalis, and T. S. Cale 1566
Kinetic Regularities of Chemical Vapor Deposition of Tungsten with V-VII
Group Metals
Y.V. Lakhotkin 5174
XX
Morphology and Carbon Content of Nickel Films Deposited from Nickelocene
L. Brissonneau, A. Reynes, and C. Vahlas 1580
An XPS Study of the Influence of Iridium CVD Conditions on the Film Composition
N. Gelfond, A. Boronin, M. Smirnov, R. Kvon, and I. Igumenov 1588
A Thermodynamic Approach to Chemical Vapour Deposition of Niobium in
Nb- I-He System
A. Golubenko, S.V. Sysoev, Y.G. Stenin, andA.A. Titov 1596
Fabrication of Thin Palladium Membranes by Chemical Vapor Deposition
G. Xomeritakis and Y.S. Lin 1604
Platinum 3D Micropatterns Formed on Substrate by LCVD with Use of
Powerful Nanosecond UV Pulsed Laser
E.F. Reznikova, V.V. Chesnokov, G.I. Zharkova, andI.K. Igumenov 1610
Thick Platinum Metal Coatings Obtained by MOCVD
I.K. Igumenov, N.V. Gelfondand R.J. Tliffias 1618
The Effect of In-Situ N2/H2 Plasma Treatment on the Properties ofChemicallyVapor Deposited TiN
D.-H. Kim, J.W. Park, and J.J. Kim 1626
Subject Index 1635
Author Index 1645
xxi