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Michael Spaid Cambrios Technologies Corpora5on
September 21, 2011
9/27/11 1
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Cambrios Introduc5on
• Venture funded company located in Sunnyvale
• 40 people, mostly scien5sts/engineers
• Focused on one innova5ve material for more than 5 years
• 2 product families for 1st market (touch): – ClearOhm™ Coated Film
– ClearOhm™ Ink
• Commercial products in the market 2 9/27/11
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Cambrios Technologies Corpora5on
9/27/11 3
Cambrios Technologies Corp. Sunnyvale CA
Cambrios Technologies K.K. Tokyo Japan
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Cambrios’ Products
• ClearOhmTM Coa5ng Materials – Manufactured in Sunnyvale
• ClearOhmTM Conduc5ve Film – Coated in Japan
9/27/11 4
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ClearOhm™ Coa5ng Material
• Wet coatable dispersion of high aspect ra5o metallic nanostructures
• Compe55ve op5cal & electrical proper5es as compared to commercial spuSered conduc5ve oxides – From <10 ohms/square to 300 ohm/square
• Low processing temperature – Compa5ble with most substrates
• PET, Polycarbonate, PEN, glass, others
• Suitable for use on exis5ng produc5on equipment – Roll-‐to-‐roll coa5ng or sheet coa5ng
9/27/11 5
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Transparent Conductors are Everywhere Today
9/27/11 6
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Large New Markets for Transparent Electrodes
9/27/11 7
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Cambrios Opportunity
9/27/11 8
A NEW TYPE OF TRANSPARENT CONDUCTIVE MATERIAL
LARGE EMERGING APPLICATIONS CURRENT FACILITY CAN SERVE WHOLE CONSUMER ELECTRONICS CATEGORIES
Poten=al to produce 30,000,000 m2 coatable material in 5,000 sf manufacturing facility
A HUGE, EXISTING MARKET FOR A SINGLE MATERIAL TYPE
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Commercial Priori5es
• Consumer Electronics – Touch Panel – LCD – OLED Display
• Cleantech – OLED Ligh5ng – Thin Film Photovoltaics
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Technology
9/27/11 10
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ClearOhmTM Layer Structure
Substrate
1. Coat nanowire layer 2. Coat overcoat (op5onal, applica5on dependent)
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Nanowire Surface Concentra5on Determines Sheet Resistance
15 Ohms/sq. 50 Ohms / sq.
Higher Nanowires Surface Concentra5on = Lower Sheet Resistance
* % Total forward transmission, glass as reference
9/27/11 12
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Engineered Nanostructures: Control over Material Proper5es
Independent process control of nanowire length and diameter
Lower haze Higher haze
9/27/11 13
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ClearOhm™ Film: A BeSer Transparent Electrode
14
• Vola5le commodity • BriSle, cracking problems • Weakly conduc5ve • Expensive material • Requires Index matching • Requires High Temperature to crystallize • Expensive to paSern
• Silver: common electronic material • Completely bend-‐able film, , no cracking, high manufacturing yield • Most conduc5ve metal; crystalline • 1% surface coverage • Deposited by wet coa5ng • Etch, Transfer, or Print
ITO ClearOhm™ Film
9/27/11
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ClearOhmTM Film Manufacturing Process
• ClearOhmTM film is created by a roll-‐to-‐roll wet coa5ng process
• Process temperatures are < 120C
9/27/11 15
Mul$%Zone*Dryer**
Unwind*
Rewind*
Slot%Die*PET*Nanowire*Film*
Mul$%Zone*Dryer**
UV*cure*
Unwind*
Rewind*
PET*Nanowire*film*Overcoat* Slot%Die*
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Op5cal Performance: Transmission
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Op5cal – Electrical Performance: Haze
G4 is Cambrios’ most op5cal clear material
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Op5cal-‐Electrical Performance: Color
G4 ClearOhmTM Ink has a more neutral color rela5ve to G2 & G3
Results on Eagle 2000 glass, reference b* = 0.34
G2 G3 G4
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Op5cal Proper5es: Color
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ClearOhmTM Film Greatly Reduces Cracking
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ClearOhmTM Film Specifica5on vs. ITO
ClearOhm ITO ClearOhm ITO ClearOhm ITO Resistance (Ω/sq.) 250 270 130 150 80 NA % Transmission 92.4 90.8 92.3 90.8 92.1 % Haze 0.6 0.7 0.7 0.7 0.9 yellowness (b*) 0.9 2.5 1.2 2.2 1.5 Cracking Pass Fail Pass Fail Pass Reliability Pass Pass Pass Pass Pass
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Commercial Progress
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Smart Phones on the Market with ClearOhmTM Material
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Sensor Makers & Chip/Module Makers: Early Adopters
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ClearOhmTM Enabled Func5onal Films
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ClearOhmTM Film Reliability
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Reliability: ClearOhmTM G4 Film
9/27/11 27
Recent customer film qualifica5on Bare film results – no encapsula5on in the device stack
50 um PET
ClearOhmTM Layer at ~250 ohm/sq.
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Ag Paste Reliability Simulated Devices
9/27/11 28
Schema5c of the Ag paste contact
Top View
Cross Sec5on
50 um PET, F090716-‐06 (O-‐35-‐39) Toyobo 250-‐5 Paste With laminate, MD
PaSerned line reliability in the laminate structure is excellent
Results on 50 um PET ClearOhmTM Film
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PaSerning Methods
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PaSerning ClearOhmTM Film
9/27/11 30
Fully Developed In Development
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Wet Etching ClearOhmTM Film • Photoresist or screen printable
resist is applied to the ClearOhmTM film to protect the conduc5ve regions
• The etching solu5on penetrates the overcoat layer and etches the nanowires – The etch rate is typically very slow
at room temperature – Faster etch rates are achieved at
higher temperature • The etchant is removed from the
overcoat aqer rinsing with DI water
• The reliability of the etched paSern aqer this process is excellent
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PET
Overcoat
Nanowires
PET
Resist
PET
Etchant 1. Penetrates overcoat 2. Etches nanowires
PET Rinse & strip resist
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Wet Etching: Full Etch and “Par5al Etch”
9/27/11 32
With full etch, nanowires are completely removed.
With par5al etch, cuts made in nanowires. Wires stay, but the material is non-‐conduc5ve.
ClearOhmTM Film Before Etch
ClearOhm™ Film
PET
Full etch process Par5al etch process
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Low Visibility PaSern: Par5al Etch Process
• For projec5ve capaci5ve touch panel applica5ons, low visibility transparent conduc5ve paSerns are essen5al
• In the non-‐conduc5ve region, the nanowires are cut into smaller segments
• Compa5ble with coarse paSerning methods, e.g. screen prin5ng
9/27/11 33
Etched Unetched
Nanowires are cut into disconnected segments
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Photo-‐paSerning on Glass Substrates
9/27/11 34
Coat Metallic Nanostructures
Soq Bake
Standard PhotopaZerning Process
Overcoat
Hard Bake
DI Rinse / Dry Standard Photolithography Process 5 micron resolu=on demonstrated Gen II glass (37 x 47 cm)
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Laser PaSerning ClearOhmTM Film
9/27/11 35
• Op5mum power – Invisible PaSern
• No damage to PET
– Complete electrical isola5on
• High Power Visible PaSern
- Damage to PET
Complete electrical isola5on
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ClearOhmTM Material TFT-‐LCD Displays (Under Development)
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DNS Gen 5 Coa5ng Trials
SK Series Capable of processing 4th-‐ to 8th-‐genera5on substrates
Linearcoater®
1.1 m x 1.25 m x 0.7 mm ~10% Nonuniformity ~30 Ω/
9/27/11 37
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Voltage-‐Transmission Curves TN Type LCD Cells
9/27/11 38 200X Microscope Image
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Conformal Via Contact
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TFT (boSom gate, back channel etched)
ITO
SiNx
Drain Source
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TFT-‐LCD Display Demonstra5on*
4.1” QVGA TFT-‐LCD Display with ClearOhmTM Pixel Electrode
*Fabricated by TTLA, Hsinchu, Taiwan
9/27/11 40
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OLED Ligh5ng
9/27/11 41
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Gravure-‐Printed Anode for OLED
Prin5ng and device manufacture performed at VTT Technical Research Center of Finland (Dr. Riikka Suhonen)
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Op#cal Characteriza#on
lines down to 0.3mm width
openings down to 0.9mm
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Printable Demonstra5ons
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Printable ClearOhmTM Ink: Feasibility Established
• Ink-‐jet • Screen Prin5ng • Gravure Prin5ng • Reverse Offset Prin5ng
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Summary: Cambrios 2011
• Commercial li]off: products for mul5touch – First consumer electronic product launch in 1Q2011
• Visibility on growth in other applica=ons – LCD, OLED, PV
• New standard in transparent electrodes – Large exis5ng market with needs for a beSer solu5on
– Rapidly emerging, huge new market categories
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