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3D NAND FLASH MEMORIESComparison of Leading Edge 3D NAND MemoriesTOSHIBA-SanDisk /SAMSUNG/SK HYNIX/INTEL- MICRONMemory report by Belinda DubeDecember 2018
REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
Table of Contents
Overview / Introduction 4
o Executive Summary
o Reverse Costing Methodology
Company Profile 8
o Toshiba/SanDisk
o Samsung
o SK Hynix
o Micron/Intel
Technology & Market 8
o NAND Roadmap
o NAND Revenue
Physical Analysis 14
o Toshiba Synthesis of the Physical Analysis
o Toshiba Physical Analysis Methodology
o Toshiba Physical analysis
Die
Cross-Section
o Toshiba Patents
o Samsung Synthesis of the Physical Analysis 53
o Samsung Physical Analysis Methodology
o Samsung Physical analysis
Die
Cross-Section
o Samsung Patents
o SK Hynix 80
Synthesis
Die design
Cross-Section
Patents
o Intel/ Micron 110
Synthesis
Die design
Cross-Section
Patents
Manufacturing Process Flow 146
o Global Overview
o Wafer Fabrication Unit
o Front-End Process
Cost Analysis 179
o Synthesis of the cost analysis
Yields Explanation & Hypotheses
NAND wafer and die cost
Front-End Cost
Component Cost
Estimated Price and Manufacturer Gross Margin 228
Company services 239
Overview / Introductiono Executive Summaryo Reverse Costing
Methodologyo Glossary
Company Profile
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Executive Summary
The memory semiconductor industry continues to grow due to higher memory demand in consumer electronics andmass storage. Remarkable investments are channeled into the memory manufacturing business. IoT escalates thisdemand and hence manufacturers continue to increase the die density of memories at the same time aiming onreduction of the NAND die. The manufacturing process is complex compared to most semiconductor products. Eachmanufacturer proposes different manufacturing techniques with each generation in order to lower the wafermanufacturing by reducing the patterning count and cost.
This report details each process and features found in the latest NAND Memories. This full reverse costing study hasbeen conducted to provide insight on technology data, detailed analysis of microstructural features, wafermanufacturing cost and die selling price of the latest LEADING EDGE 3D NAND MEMORIES produced by the four topmanufacturers in the NAND memory industry.
Toshiba/SanDisk, Samsung , Micron/Intel have produced 64 Layers in their latest 3D NAND and SK Hynix have the
highest number of layers in their NAND Memory having 72 layers in their latest 3D NAND.
Based on complete teardown analyses of the 3D, the reports provide the physical analysis and detailed manufacturing
methods and cost estimation of each 3D NAND wafer. Comparison is made on the technology used, feature differences
and the wafer fabrication technics used by each manufacturer and their estimated cost.
Moreover, the report proposes a comparison of the four different NAND memories, highlights the differences in design
and manufacturing process.
All the 3D NAND memory manufacturers use the 12 inch wafer (300mm).
Overview / Introductiono Executive Summaryo Reverse Costing
Methodologyo Glossary
Company Profile
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Executive Summary
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Toshiba NAND- Packaging (with mesurements)
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Toshiba NAND - Multiple Layer Etch
Dielectric support pillar :
• High Aspect Ratio etching is perfomed through dielectric material oxide and alternating stack
• The opening extending through the terrace is filled with SiO2
• This support pillar is useful in providing mechanical support to the terrace structure to avoid collapse during SiN wet etching.
Channel Hole• High Aspect Ratio etch is also perfomed in
creation, of channel hole and memory slits.
Cell Vertical structure (full view) –SEM©2018 by System Plus Consulting
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Toshiba NAND- Logic Area : Transistor Technology
620nm
620nm
320nm
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Samsung Memory- Memory Cross section- staircase
NAND Memory Staircase©2018 by System Plus Consulting
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Samsung Memory- Memory Cross section- staircase
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
SK Hynix Memory- Effective unit Area
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Intel/Micron Memory- Double stack technic
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Die comparison
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Physical analysis summary
Overview / Introduction
Company ProfileTechnology and market
Physical Analysis o NAND Synthesiso Toshiba/SanDisk Synthesiso Toshiba/SanDisk Packageo Toshiba/SanDisk Physical
Analysiso Toshiba/SanDisk Patento Toshiba Outlineo Samsung Synthesiso Samsung Packageo Samsung Physical Analysiso Samsung Patento Samsung Outlineo SK Hynix Synthesiso SK Hynix Packageo SK Hynix Physical Analysiso SK Hynix Patento SK Hynix Outlineo Intel/Micron Synthesiso Intel/Micron Packageo Intel/Micron Physical
Analysiso Intel/Micron Patento Intel/Micron outlineo Comparison
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Physical analysis summary -staircase
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flowo Toshiba Overviewo Toshiba Front-End Processo Samsung Overviewo Samsung Front End processo SK Hynix Overviewo SK Hynix Front End Processo Intel/Micron Overviewo Intel/Micron Front End
Processo Comparison
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
SK Hynix- Bit line contact and bit line
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flowo Toshiba Overviewo Toshiba Front-End Processo Samsung Overviewo Samsung Front End processo SK Hynix Overviewo SK Hynix Front End Processo Intel/Micron Overviewo Intel/Micron Front End
Processo Comparison
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
Intel/Micron – First deck: channel hole and slit formation
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Toshiba/SanDisk Supply
Chain/Yieldo Toshiba/SanDisk Wafer & Die Costo Toshiba/ SanDisk Package Costo Toshiba/SanDisk Back-End Costo Toshiba/SanDisk Component Costo Synthesiso Samsung Supply Chain/Yieldo Samsung Wafer & Die Costo Samsung Package Costo Samsung Back-End Costo Samsung Component Costo Synthesiso SK Hynix Supply Chain/Yieldo SK Hynix Wafer & Die Costo SK Hynix Package Costo SK Hynix Back-End Costo SK Hynix Component Costo Synthesiso Intel/Micron Supply Chain/Yieldo Intel/Micron Wafer & Die Costo Intel/Micron Package Costo Intel/Micron Back-End Costo Intel/Micron Component Cost
Estimated Price Analysis
Related Reports
About System Plus
Memory – CMOS and Last Metal Layers Front End Cost
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Toshiba/SanDisk Supply
Chain/Yieldo Toshiba/SanDisk Wafer & Die Costo Toshiba/ SanDisk Package Costo Toshiba/SanDisk Back-End Costo Toshiba/SanDisk Component Costo Synthesiso Samsung Supply Chain/Yieldo Samsung Wafer & Die Costo Samsung Package Costo Samsung Back-End Costo Samsung Component Costo Synthesiso SK Hynix Supply Chain/Yieldo SK Hynix Wafer & Die Costo SK Hynix Package Costo SK Hynix Back-End Costo SK Hynix Component Costo Synthesiso Intel/Micron Supply Chain/Yieldo Intel/Micron Wafer & Die Costo Intel/Micron Package Costo Intel/Micron Back-End Costo Intel/Micron Component Cost
Estimated Price Analysis
Related Reports
About System Plus
Memory 3D Front-End Cost
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Toshiba/SanDisk Supply
Chain/Yieldo Toshiba/SanDisk Wafer & Die Costo Toshiba/ SanDisk Package Costo Toshiba/SanDisk Back-End Costo Toshiba/SanDisk Component Costo Synthesiso Samsung Supply Chain/Yieldo Samsung Wafer & Die Costo Samsung Package Costo Samsung Back-End Costo Samsung Component Costo Synthesiso SK Hynix Supply Chain/Yieldo SK Hynix Wafer & Die Costo SK Hynix Package Costo SK Hynix Back-End Costo SK Hynix Component Costo Synthesiso Intel/Micron Supply Chain/Yieldo Intel/Micron Wafer & Die Costo Intel/Micron Package Costo Intel/Micron Back-End Costo Intel/Micron Component Cost
Estimated Price Analysis
Related Reports
About System Plus
Memory Wafer & Die Cost
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Toshiba/SanDisk Supply
Chain/Yieldo Toshiba/SanDisk Wafer & Die Costo Toshiba/ SanDisk Package Costo Toshiba/SanDisk Back-End Costo Toshiba/SanDisk Component Costo Synthesiso Samsung Supply Chain/Yieldo Samsung Wafer & Die Costo Samsung Package Costo Samsung Back-End Costo Samsung Component Costo Synthesiso SK Hynix Supply Chain/Yieldo SK Hynix Wafer & Die Costo SK Hynix Package Costo SK Hynix Back-End Costo SK Hynix Component Costo Synthesiso Intel/Micron Supply Chain/Yieldo Intel/Micron Wafer & Die Costo Intel/Micron Package Costo Intel/Micron Back-End Costo Intel/Micron Component Cost
Estimated Price Analysis
Related Reports
About System Plus
Memory : Packaging Cost
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Cost Comparisono Wafer Cost o Die Costo CMOS o NAND Memory Cellso Top metallizationo Cost/Gb
Related Reports
About System Plus
Wafer Cost Comparison- Medium Yield
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Cost Comparisono Wafer Cost o Die Costo CMOS o NAND Memory Cellso Top metallizationo Cost/Gb
Related Reports
About System Plus
Die Cost Comparison- Medium Yield
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Cost Comparisono Wafer Cost o Die Costo CMOS o NAND Memory Cellso Top metallizationo Cost/Gb
Related Reports
About System Plus
CMOS Cost Comparison
Overview / Introduction
Company Profile
Technology and market
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Estimated Price Analysis
Related Reports
About System Plus
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