top most important electrical engineering mcq's

10
Top Most Important Electrical Engineering MCQ’s Click here for YouTube video on this topic

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Top Most Important Electrical Engineering

MCQ’s

Click here for YouTube video on this topic

1. Electron-hole pair are created by

a. recombination

b. thermal energy

c. Ionization

d. Doping

Ans .b. thermal energy

2. Recombination occurred when

(a) an electron falls into a hole

(b) a positive and a negative ion bond together

(c) a valence electron becomes a conduction electron

(d) a crystal is formed

Ans. (a) an electron falls into a hole

3. Each atom in a silicon crystal has

(a) four valence electrons

(b) four conduction electrons

(c) eight valence electrons, four of its own and four shared

(d)no valence electrons because all are shared with other atoms

Ans. (c) eight valence electrons, four of its own and four shared

4. The process of adding an impurity to an intrinsic

semiconductor is called

(a) doping

(b) recombination

(c)atomic modification

(d)Ionization

Ans. (A) doping

5. The current in a semiconductor is produced by

(a) electrons only

(b) holes only

(c) negative ions

(d)both electrons and holes

Ans. (d)both electrons and holes

6. A trivalent impurity is added to silicon to create

(a) germanium

(b) a p-type semiconductor

(c) an n-type semiconductor

(d) a depletion region

Ans. a p-type semiconductor

7. The purpose of pentavalent impurity is to

(a) reduce the conductivity

(b) increase the number of holes

(c) increase the number of free electrons

(d)create minority carriers

Ans. (c) increase the number of free electrons

8. For a silicon diode, the value of the forward-bias voltage

typically

(a) must be greater than 0.3V

(b) must be greater than 0.7V

(c) depends on the width of depletion region

(d)depends on the concentration of majority carriers

Ans. (b) must be greater than 0.7V

9. When forward biased , a diode

(a) blocks current

(b) conducts current

(c) has a high resistance

(d) drops a large voltage

Ans. B. conducts current

10. The term bias means

(a) the ration of majority carriers to minority carriers

(b) the amount of current across a diode

(c) a dc voltage is applied to control the operation of a device

(d) none of the above

Ans. (c) a dc voltage is applied to control the operation of a

device

11. When a voltmeter is placed across a forward-biased diode, it

will read a voltage approximately equal to

(a) the bias battery voltage

(b) 0V

(c) the diode barrier potential

(d) the total circuit voltage

Ans. (c) the diode barrier potential

12. In a LED, the light is produced by a solid state process called as

(a) light radiation

(b) electroluminescence

(c) light multiplication

(d) Phosphoresce

Ans. (b) electroluminescence

13. Efficiency of LED is given by

(a) light to light conversion

(b) light to electrical conversion

(c) electrical power to visible light conversion

(d) none of above

Ans. (c) electrical power to visible light conversion

14. The wavelength of the light emitted and its colour depends on

the

(a) forward voltage

(b) forward current

(c) band gap energy of the material forming P-N junction

(d) none of the above

Ans. (c) band gap energy of the material forming P-N junction

15. Although current is blocked in reverse bias,

(a) there is some current due to majority carrier

(b) there is very small current due to minority carriers

(c) there is an avalanche current

(d) none of the above

Ans. (b) there is very small current due to minority carriers

16. The cathode of zener diode in a voltage regulator is normally

(a) more positive than the anode

(b) more negative than the anode

(c) at +0.7 V

(d) grounded

Ans.(a) more positive than the anode

17. If a certain zener diode has a zener voltage of 3.6V,it

operates in

(a) regulated breakdown

(b) Zener breakdown

(c) forward conduction

(d) avalanche breakdown

Ans. (b) Zener breakdown

18. When operated in cut-off and saturation, the transistor acts

like

(a) linear amplifier

(b) a switch

(c) a variable capacitor

(d) a variable resistance

Ans. (b) Switch

19. The JFET is

(a) a unipolar device

(b) a voltage-controlled device

(c) a current controlled device

(d) the supply voltage is too high

Ans. (a) a unipolar device

20. The channel of JFET is between the

(a) gate and drain

(b) drain and source

(c) gate and source

(d) input and output

Ans. (b) drain and source

21. A JFET always operates with

(a) gate to source pn junction reverse-biased

(b) gate to source pn junction forward-biased

(c) the drain connected to ground

(d) the gate connected to source

Ans. (a) gate to source pn junction reverse-biased

22. IDSS is

(a) the drain current with the source shorted

(b) the drain current at cutoff

(c) the maximum possible drain current

(d) the midpoint drain current

Ans. (c) the maximum possible drain current

23. Drain current in the constant-current area increases when

(a) the gate-to-source bias voltage decreases

(b) the gate-to-source bias voltage increases

(c) the drain to source voltage increases

(d) the drain to source voltage decreases

Ans. (a) the gate-to-source bias voltage decreases

24. At cutoff, the JFET channel is

(a) at its widest point

(b) completely closed by the depletion region

(c) extremely narrow

(d) reverse-biased

Ans. (b) completely closed by the depletion region

25. A thyristor has

(a) 2 pn junctions

(b) 3 pn junctions

(c) 4 pn junctions

(d) only 2 terminals

Ans. (b) 3 pn junctions

26. Common types of thyristors include

(a) BJTs and SCRs

(b) UJTs and PUTs

(c)FETs and TRIACs

(d)DIACs and TRIACs

Ans. (d)DIACs and TRIACs

27. The diac is

(a) a thyristor

(b) a bilateral, two terminal device

(c) like two parallel 4-layer diodes in reverse directions

(d)all of these

Ans. (d)all of these

28. The triac is

(a) like a bidirectional SCR

(b) a four-terminal device

(c) not a thyristor

(d) answers (a) and (b)

Ans. (a) like a bidirectional SCR

29. The value of reverse bias resistance for an ideal diode is

__________

(a) infinity

(b) 0

(c) 1

(d) none of the above

Ans. (a) infinity

30. Semiconductor material have __________ temp. coefficient

(a) Positive

(b) Negative

(c) Both positive and negative

(d) None

Ans. (b) Negative

31. A zener diode works on the principal of

(a) tunneling of charge carriers across junction

(b) thermionic emission

(c) diffusion of charge carriers across junction

(d) hopping of charge carriers across junction

Ans. (c) diffusion of charge carriers across junction

32. Optical fiber cable carries following

(a) Electrical signal

(b) Light signal

(c) Sound signal

(d) None of above

Ans. (b) Light signal