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DMP3020LSSDocument number: DS31263 Rev. 8 - 2

1 of 5www.diodes.com

October 2008 Diodes Incorporated

DMP3020LSS

NEWPRODUCT

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

Features

Low On-Resistance

14m @ VGS = -10V

25m @ VGS = -4.5V

Low Gate Threshold Voltage

Low Input Capacitance Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Case: SOP-8L

Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.072g (approximate)

SOP-8L

S

D

D

G

D

D

S

S

TOP VIEW

Internal SchematicTOP VIEW

Maximum Ratings @TA = 25C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -30 V

Gate-Source Voltage VGSS 25 V

Drain Current (Note 1) SteadyState

TA = 25C

TA = 70CID

-12-6

A

Pulsed Drain Current (Note 3) IDM -40 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1) PD 2.5 W

Thermal Resistance, Junction to Ambient RJA 50 C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 C

Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB with RJA = 50C/W.

2. No purposefully added lead.

3. Pulse width 10S, Duty Cycle 1%.4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

Please click here to visit our online spice models database.
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Electrical Characteristics @TA = 25C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A

Zero Gate Voltage Drain Current IDSS -1 A VDS = -30V, VGS = 0V

100 VGS = 20V, VDS = 0VGate-Source Leakage IGSS

800

nAVGS = 25V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS(th) -1 -2 V VDS = VGS, ID = -250A

Static Drain-Source On-Resistance RDS (ON)

11.618.6

1425

mVGS = -10V, ID = -8A

VGS = -4.5V, ID = -5A

Forward Transconductance gfs 12 S VDS = -10V, ID = -12A

Diode Forward Voltage (Note 5) VSD -0.5 -1.1 V VGS = 0V, IS = -2A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss 1802 pF

Output Capacitance Coss 415 pF

Reverse Transfer Capacitance Crss 295 pF

VDS = -15V, VGS = 0V, f = 1.0MHz

Gate Resistance RG 2.3 VGS = 0V, VDS = 0V, f = MHz

SWITCHING CHARACTERISTICS

Total Gate Charge Qg 15.3

30.7

VDS = -15V, VGS = -4.5V, ID = -8A

VDS = -15V, VGS = -10V, ID = -8AGate-Source Charge Qgs 3.5 VDS = -15V, VGS = -10V, ID = -8A

Gate-Drain Charge Qgd 7.9

nC

VDS = -15V, VGS = -10V, ID = -8A

Turn-On Delay Time td(on) 5.1

Rise Time tr 8

Turn-Off Delay Time td(off) 46

Fall Time tf 30

nsVGS = -10V, VDS = -15V,

RD = 15, RG = 6

NEWPRODUCT

Notes: 5. Short duration pulse test used to minimize self-heating effect.

Fig. 1 Typical Output Characteristic

0

4

8

12

16

20

0 1 2 3 4

-V , DRAIN-SOURCE VOLTAGE (V)DS

-I,D

5

RAIN

CURRENT(A)

D

V = -1.5VGS

V = -2.0VGS

V = -2.5VGS

V = -3.0VGS

V = -4.0VGS

V = -10VGS

Fig. 2 Typical Transfer Characteristic

0

4

8

12

16

20

1 1.5 2 2.5 3 3.5

-V , GATE-SOURCE VOLTAGE (V)GS

-I,DRAIN

C

RRENT(A)

D

T = -55CA

T = 25CA

T = 85CAT = 125CA

T = 150CA




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Fig. 3 Typical On-Resistancevs. Drain Current and Gate Voltage

0

0.005

0.01

0.015

0.02

0.025

0.03

0 6 12 18 24 30

-I , DRAIN-SOURCE CURRENT (A)D

R

,DRAIN-SO

RCEON

-RESISTANCE(

)

DS(ON)

V = -4.5VGS

V = -10VGS

Fig. 4 Typical On-Resistancevs. Drain Current and Temperature

0

0.005

0.01

0.015

0.02

0.025

0.03

0 6 12 18 24 30

-I , DRAIN CURRENT (A)D

R

,DRAIN-S

URCEON

-RESISTANCE(

)

DS(ON)

T = -55CA

T = 25CA

T = 85CA

T = 125CA

T = 150CA

Fig. 5 Normalized On-Resistance vs. Ambient Temperature

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (C)A

R

,DRAIN-SOURCE

ON-RESISTANCE(NORMALIZED)

DS(ON)

V = -4.5V

I = -5AGS

D

V = -10V

I = -10AGS

D

Fig. 6 Typical Total Capacitance

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)DS

C,CAPACITANCE(pF)

100

1,000

10,000

Ciss

Coss

Crss

f = 1MHz

0

0.4

0.8

1.2

1.6

2.0

2.4

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (C)A

-V

,GATETHRESHOLD

VOLTAGE(V)

GS(TH)

I = -250AD

Fig. 8 Diode Forward Voltage vs. Current

0

4

8

12

16

20

0 0.2 0.4 0.6 0.8 1 1.2

-V , SOURCE-DRAIN VOLTAGE (V)SD

-I,SOURCEC

RRENT(A)

S

T = 25CA

NEWPRODUCT




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0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000

r(t),TRANSIENTTHERM

ALRESISTANCE

Fig. 9 Transient Thermal Response

t , PULSE DURATION TIME (s)1

T - T = P * R (t)

Duty Cycle, D = t /tJ A JA

1 2

R (t ) = r(t) * R

R = 87C/W

JA JA

JA

P(pk)t1

t2

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

NEWPRODUCT

Ordering Information (Note 6)

Part Number Case Packaging

DMP3020LSS-13 SOP-8L 2500/Tape & Reel

Notes: 6. For packaging details, go to our website athttp://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

Logo

Part no.

Year: "07" =2007"08" =2008

Xth week: 01~52

1 4

8 5

P3020LS

YY WW

Package Outline Dimensions

GAUGE PLANE0.2

54

SEATING PLANE

DETAIL A

DETAIL A

EE1

h

L

D

e b

A2

A1

A

45

7~9

A3

SOP-8L

Dim Min Max

A 1.75

A1 0.08 0.25

A2 1.30 1.50

A3 0.20 Typ.

b 0.3 0.5

D 4.80 5.30

E 5.79 6.20

E1 3.70 4.10

e 1.27 Typ.

h 0.35

L 0.38 1.27

0 8All Dimensions in mm



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Suggested Pad Layout




NEWPRODUCT

IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any producdescribed herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shalassume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our websiteharmless against all damages.

LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed writtenapproval of the President of Diodes Incorporated.

X

C1

C2

Y

Dimensions Value (in mm)

X 0.60

Y 1.55

C1 5.4

C2 1.27

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