· disadvantages: complex target design outline motivation background examples exercise 8...
TRANSCRIPT
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Simulation of
Metal
TRAnport
SIMTRA : a tool to predict and understand deposition
K. Van Aeken, S. Mahieu, D. Depla
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1) Motivation : Why do we calculate ?2) Scientific background : How do we calculate ?3) Examples : What can we calculate ?4) Some conclusions
Outline
K. Van Aeken, S. Mahieu, D. Depla J. Phys. D: Appl. Phys. 41 205307 (2008)
OutlineMotivationBackgroundExamplesExercise
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Motivation
The results of each deposition technique is a thin film with given properties
A few relevant properties are thickness, crystallographic orientation, morphology, density, composition, …
All depend on : - the type of arriving species- the properties of the particles (charge, energy, …)- the number of arriving particles
The major players are of course the film forming particles
So SIMTRA is developed to predict the number and the properties of the particles leaving the source and arriving at the substrate.
The code is optimized for magnetron sputter deposition (see further)
OutlineMotivationBackgroundExamplesExercise
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Motivation
Why developing a new simulation code ?
-Most codes are research group specific.-Most codes are hard to access .-Most codes are not user-friendly. They miss a good interface to assist the user.
An easy to access program (www.draft.ugent.be )with a simple interface (three VB sheets)is the answer.
OutlineMotivationBackgroundExamplesExercise
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Scientific background : magnetron sputter deposition
Magnetron sputter deposition is based on a magnetically assistedgas discharge
Source materials is the cathode, or targetDischarge voltage : order 400 VWorking pressure (argon gas) :1x10-3 tot 1x10-2 mbar
Behind the cathode magnetsare placed. In this way the gas discharge can bemaintained at lowerpressures.Reason : higher depositionrates
OutlineMotivationBackgroundExamplesExercise
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Scientific background : magnetron types
2 inch diameter cathodeCilindrical planar kathodeLab scale
2’’
15’’
4 1/3’’ Rectangular planar cathodeIndustrial scale
Intrinsic disadvantages : Formation of an erosion groove
Less stable in reactive mode
Advantages : simple target design
OutlineMotivationBackgroundExamplesExercise
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Scientific background : magnetron types
Rotating cylindricalmagnetron
18 cm : but can be extended
5 cm
45 cm
14 cm
Advantages : Stable in reactive modeNo erosion groove (i.e. longer lifetime)
Disadvantages : Complex target design
OutlineMotivationBackgroundExamplesExercise
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Scientific background : Target erosion : starting points of the sputtered
particles
Cooperation with VITO
OutlineMotivationBackgroundExamplesExercise
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Scientific background : sputtering
Magnetron sputter deposition is an PVD technique
Physical Vapour Deposition
The production of a vapour by a physical process. Thisprocess is sputtering.Ions from the plasma hit the target, and target atoms are ejected. These move towards the substrate to form the film.
OutlineMotivationBackgroundExamplesExercise
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Scientific background : sputtering
0.001
0.01
0.1
1
10
sputter yield
10 100 1000 10000 100000
ion energy (eV)
The number of atoms sputtered per ion depends on the material and the discharge voltageFor metal : 0.5 to 2 (Al to Cu)For oxides : much lower 0.07 (Al)
OutlineMotivationBackgroundExamplesExercise
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Scientific background : angular distribution of sputtered particles
Heart-like emissionDeviation from cosine
Propose differential yield :
∑=
=Ω
5
12
2
cos)(i
i
ic
d
Ydθθ
Fit coefficients ci from thesimulated deposition profilesof an angular base set
Nascent angular distribution :
OutlineMotivationBackgroundExamplesExercise
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Scientific background : energy distribution1.0
0.8
0.6
0.4
0.2
0.0
relative number density
0.001 0.01 0.1 1 10 100
energy copper atoms (eV)
Copper evaporated at 1300 K
Copper sputtered by 300 eV Ar+
Thompson distribution SRIM energy distribution
Usb/2
average energy of sputtered particles
OutlineMotivationBackgroundExamplesExercise
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Scientific background : sputter yield
To calculate a deposition rate, the sputter yield of the material must be known.
What yield to use ?Sputter yields Cu
0.5
1
1.5
2
2.5
200 300 400 500 600 700
Vd of Ei
Yield
exp
Yam model
Tridyn
srim
We decided to measure them.
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Scientific background : reactive magnetron sputtering
Magnetron sputer deposition allows to deposit compounds.
Oxides, nitrides : generally no conductivetarget available
Solution : the reactive gas is added to the discharge
Reaction occurs mainly on the substate, but at sufficient high reactive gas flows also on the target.
-
reactive gas : O2
SN N
+
Target
Ar-ions
Consequences ?
OutlineMotivationBackgroundExamplesExercise
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Scientific background : reactive magnetron sputtering
390
380
370
360
350
340
330
target voltage (V)
1.41.21.00.80.60.40.20.0
oxygen flow (sccm)
300
250
200
150
100
50
depositio
n ra
te (m
ass unit/s
)
/ target voltage / deposition rate
full symbols : additionopen symbols : removal
Reactive deposition of TiO2
OutlineMotivationBackgroundExamplesExercise
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Scientific background : SIMTRA
Calculate free path length
High energy
Near thermal energy
Thermal
Initialization Generate particles-planar : radial erosion profile-cylindrical : measured or simulated erosion profile
BoundaryImplements geometry
Does particles’ trajectory intersects surface before collision ?
NOYES
m lnXλ = −λ
m
g
1
nλ =
σs
m
g r
v
n vλ =
σ
m
sg
g
1
mn 1
m
λ =
σ +
OutlineMotivationBackgroundExamplesExercise
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Scientific background : SIMTRA
NOBoundary
Implements geometryDoes particles’ trajectory
intersects surface before collision ?
Describe collision :Calculate scattering angle
Calculate new velocity
com com2
R 2
2
com
1(E ,p) 2p dr
V(r) pr 1
E r
∞
θ = π −
− −∫
Go back to free path calculation
YES
Deposition
Generate new particle
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Scientific background : SIMTRA
com com2
R 2
2
com
1(E ,p) 2p dr
pr 1
E r
V(r)
∞
θ = π −
− −∫
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Scientific background : SIMTRA
Internuclear distance r (Å)Interatomicpotential (eV)
Internuclear distance r (Å)Interatomicpotential (eV)
Screened Coulomb potential :Only repulsive !
Quantum-mechanical potentialsAttractive and repulsive(only Cu-Ar and Al-Ar)
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Examples : Verification of the code ?
The Metal Flux Monitor
C. Eisenmenger-SittnerM. Horkel
Angular distribution of metal flux Thickness Profile
Pinhole Camera : A particle that passes the orifice (diameter 1mm) at
a given angle x impinges the substrate a the position y
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Examples : Verification of the code ?
Comparison Cu at variable pressures
Comparison Al at variable pressures
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Examples : Deposition rate distribution for a rotating magnetron
Measure deposition rate with a
quartz crystal microbalance for :
Cu, Ti, Al target
Ar pressure : 0.3, 0.6 and 1 Pa
as function of θ at : 3 radial distances : r1,r2,r3 3 z-positions : z1,z2,z3
⇒Outward radial metal flux (r,θ,z)
Compare to simulation
Al, 0.3Pa Ar
r = r2, θ = -30°, z = z2Vd = 357 V, I = 0.45 A
Example :
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Examples : Deposition rate distribution for a rotating magnetron
P = 0.3 Pa
r = r1
Spatial dependence Pressure dependence :
r = r1z = z2
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Examples : A simple thing to start
We can expect that the deposition rate decreases as a function of the target-substrate distance.What is the relationship ? We expect a 1/d2 relationship at sufficient high pressure. Well, let us test this idea with SiMTRA
A planar circular
magnetron (2inch)
mounted in a cubic
vacuum chamber
(1x1x1 m). The
substrate was a circular
plate of 1x1 cm placed
under the target centre
at several distances.
The target material was
aluminum.
Using an output file of SIMTRA and MatLab one can check the configuration
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Examples : A simple thing to start
60000
50000
40000
30000
20000
10000
0
5.568101520100
0.0001 0.005 0.01 0.015 0.02 0.025 0.03 0.033
0.1 Pa
0.3 Pa
0.6 Pa
0.9 Pa
d-2 (cm
-2 )
target-substrate distance d (cm)
number of arriving particles
Seems to fit quite well.
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Examples : Prediction of the composition for dual planar magnetrons
Experimental set-up
Thanks to M. Saraiva
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Examples : Prediction of the composition for dual planar magnetrons
•Discharge current
Mg, Cr = 0.5 A
•Source-sample distance
•Oxygen flow
Mg-Cr-O
20
18
16
14
12
10
8
09121316192125273241
20
18
16
14
12
10
850403020100
7
6
5
4
3
2
4952525254545758605959
20
18
16
14
12
10
8
1008175736558504133220
target position Mg
target position Cr
oxygen flow
Mg concentration (%)
Cr concentration (%)
O concentration (%)
target-sample distance (cm)
oxygen flo
w (sccm)
Mg metal ratio (%)
composition
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Examples : Prediction of the composition for dual planar magnetrons
100
80
60
40
20
0100806040200
100
80
60
40
20
0100806040200
100
80
60
40
20
0100806040200
100
80
60
40
20
0100806040200
100
80
60
40
20
0100806040200
M/(M+Mg) %
(R'/(R'+1))x100
Mg(Al)O Mg(Cr)O Mg(Ti)O
Mg(Y)O Mg(Zr)O
open symbols : experimental
closed symbols : SiMTRA
: fitted line through the experimental points
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Examples : Prediction of the composition for dual rotating
magnetrons
Setup:
Cu - target Al - targetshield in order
to minimize
re-deposition
discharge
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Examples : Prediction of the composition for dual rotating magnetrons
Simulation : Separate calculation for both magnetronsUsing correct sputter yields for Al and CuCalculate the composition
Experiment : Measuring Cu/Al using EPMA and EDX
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Examples : Prediction of the composition for dual rotating magnetrons
100
80
60
40
20
0
at. %
Cu
50403020100
distance from chamber wall (cm)
0.3 A exp
0.3 A SiMTRA 0.6 A exp
0.6 A SiMTRA 0.9 A exp
0.9 A SiMTRA
1.0
0.8
0.6
0.4
0.2
relative # of atoms arriving at substrate
50403020100
distance from chamber wall (cm)
Al exp
Al SiMTRA Cu exp
Cu SiMTRA
Deposition of Cu-Al: SiMTRA vs.
experiments
• discharge current
Cu = 0.3 A, Al = 0.3 - 0.9 A
• source-sample distance = 9.5 cm
• SiMTRA can be used to predict
composition in a dual magnetron
setup
Thanks to F. Boydens
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Examples : Reactive magnetron sputtering : condition of the substrate
tθ
t1 θ−
cθ
c1 θ−
F
F1
F2
F4F3
The composition at the substrate is defined by the deposition rate on the substrate, and the reactive gas pressure
( ) ( ) ( )c
c
t
tMc
c
t
tNccA
A1Y
e
J1
A
AY
e
J1F20 θθ−
−θ−θ
+θ−α=
Homogeneous deposition and steady state conditions:
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Examples : Reactive magnetron sputtering : condition of the substrate
( ) ( ) ( )c c,i N t t c,i M t td c, ,i ,i d i
J J0 2 F 1 Y A 1 Y 1 A
e ef f
= α − θ + θ − θ − − θ θ
Subdivide the substrate in several cells and the condition of cell i can be calculated by
The fraction fd,i of sputtered atoms arriving at each cell i can be calculated with SiMTRA. So, we included the output of SiMTRA in another simulation tool (also available at www.draft.ugent.be) RSD2009.
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Examples : Reactive magnetron sputtering : condition of the substrate
0.37
0.35
0.33
0.31
0.29
Total pressure (Pa)
3.02.01.00.0
Oxygen flow (sccm)
Blue : metalRed : oxide
Thanks to Wouter Leroy
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Examples : Negative oxygen emission
M+
O-
Masspec
Y or Al
P(Ar) 0.4 PaP(O ) 0.04 Pa2
8 cm
Measurement of negative oxygen emission during reactive magnetron sputtering
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Examples : Negative oxygen emission
100
101
102
103
104
Cps (a.u.)
25020015010050E (eV)
exp O SiMTRA O2 SiMTRA
YO SiMTRA YO2 SiMTRA O-
O2
- =>
O + O-YO
- =>
Y + O-
YO2
- =>
YO + O-
100
101
102
103
104
Cps (a.u.)
30025020015010050 E (eV)
exp O SiMTRA O2 SiMTRA
AlO SiMTRA AlO2 SiMTRAO
-
O2
- =>
O + O-
AlO- =>
Al + O-
AlO2
- =>
AlO + O-
VYOM
OMxV
VYOM
OMxV
VOM
OMxV
VOM
OMxV
d
d
d
d
5.24)(
)(
28)(
)(
5.92)(
)(
185)(
)(
2
2
=
=
=
=
VAlOM
OMxV
VAlOM
OMxV
VOM
OMxV
VOM
OMxV
d
d
d
d
78)(
)(
108)(
)(
145)(
)(
290)(
)(
2
2
=
=
=
=
Simulation of the energy distribution
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Examples : Negative oxygen emission
0°10°
20°
-30° 30°
-20°
-10°
Massp
ec
Masspec
Masspec
Masspec
Masspec
Masspec
Massp
ec
Direction of the negative ions.
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Examples : Negative oxygen emission
'O exp' 'O SiMTRA' 'O/Al SiMTRA (a.u.)' 'magnetron'
0°10°
20°
-30° 30°
-20°
-10°
Al Y
'O exp' 'O SiMTRA' 'O/Y SiMTRA (a.u.)' 'magnetron'
0°10°
20°
-30° 30°
-20°
-10°
Thanks to Stijn Mahieu
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Examples : momentum flux
Opening area ATorsion plate
Torsion wire
reflector
Front view Back view
Measure steady state rotation angle => know momentum flux
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Examples : momentum flux
15
12
9
6
3
Hardness (GPa)
40x10-21
3020100
Measured Mtot (kgm/s)
Contribution of backscatter ions, sputtered neutrals to the total momentum flux can be calculated using SIMTRA
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Examples : Biaxial aligned thin films
Out-of-
planeGrain boundary
In-
plane
Only preferred out-of-planeorientation : uniaxialalignment
Out-of-
planegrain
boundary
In-
plane
Preferred in-plane and out-of-plane orientation: biaxialalignment
FWHM
XRD pole-
figures
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Examples : Biaxial aligned thin films
Zone T growth: as seen in plan view
- growth rate anisotropy due to anisotropy in capture cross-section
of incoming adatoms
Direction of
incoming
material
Capture length
(111)
(111)
(111)
(111)
Sketch of plan view
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Examples : Biaxal aligned thin filmsOutlineMotivationBackgroundExamplesExercise
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Conclusion
The code can give an answer to quite some questions related to
Deposition rateCompositionEnergy of deposited sputtered particlesAnd probably you can invent a few more …
In that case, or if you wish to cooperate on this projectwe are ready to assist you …
Contact : [email protected]
Cost of SiMTRA : A scientific return in joint papers is a good alternative for money.
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Exercise : vacuum chamber
The influence of a shutter on the deposition profile.
Set-up
Cylindrical vacuum chamber : diameter : 60 cmlength : 50 cm
60 cm
50 cm
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Exercise : gas element, pressure, temperatureOutlineMotivationBackgroundExamplesExercise
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Exercise : the source Lab magnetron 2”OutlineMotivationBackgroundExamplesExercise
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Exercise : the source : position
60 cm
50 cm
The centre of the axis is in the middle of the magnetron
So, in the middle of the vacuum chamber lidand z=0.035 m
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Exercise : let’s make a cylindrical substrate
1 cm
2 cmThis object consists of 3 surfaces !1) Plane piece : outer boundary circle2) Cylindrical piece3) Plane piece : outer boundary circle
This tells to SIMTRA where the surfaces are located in the reference system of the object (see manual, and next slide)
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Exercise : the position vectors for the substrate
2 cm
x’
z’
y’
Reference system of the object
c
a
b-0.005-0.010
-0.00500.01
-0.00500
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Exercise : the position vectors for the substrate
2 cm
x’
z’
y’
Reference system of the object
c
a
b
0.0050.010
0.00500.01
0.00500
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Exercise : the position vectors for the substrate
2 cm
x’
z’
y’
Reference system of the object
-0.0050.01
+0.00500
-0.00500
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Exercise : position the substrate
60 cm
50 cm
X : 0Y : 0Z : 0.175 m
10 cm
Magnetron length : 7 cmCentre of the substrate : 0.5 cmAnode-substrate top surface : 10 cm
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Exercise : check the output : Matlab file : plotdepositie
This looks just great !
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Let us calculate : the deposition profile on the top surface
2.0
1.5
1.0
0.5
0.0
2.01.51.00.50.0
Yellow is zero.
What is the effect of the pressure ?
1 4 7
10
13
16
19
22
25
28
R1
R4
R7
R10
R13
R16
R19
R22
R25
R28
20-25
15-20
10-15
5-10
0-5
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Repeat the simulations at different pressures
45x103
40
35
30
25
20
15
10
5
number of arriving atoms
86420
argon pressure (Pa)
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Including a shutter …
The shutter is built from a rod and a circular disk.
60 cm
50 cm
The rod is 38 cm long and has a diameter of 1 cm. Make it.
The position of the rod is 2 cm off centre, and connected to the back of the chamber
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Including a shutter …(2)
The shutter is built from a rod and a circular disk.
60 cm
50 cm
The disk is 10 cm in diameter and 1 mm thick. Make it…
Its centre is at 7 cm in X and 2 cm in Y, and connected to the rod.
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Exercise : check the output : Matlab file : plotdepositie
This looks just great !
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Repeat the simulations at different pressures
45x103
40
35
30
25
20
15
10
5
0
number of arriving atoms
86420
argon pressure (Pa)
no shutter
with shutter
The introduction of the shutter lowers the deposition rate as the shutter collects atoms which can not reach the substrate anymore.
But there is more …
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Let us look at the distributions
25
20
15
10
5
0
20100
0.25 Pa
25
20
15
10
5
0
20100
0.5 Pa
25
20
15
10
5
0
20100
1 Pa
25
20
15
10
5
0
20100
2 Pa
25
20
15
10
5
0
20100
3 Pa
25
20
15
10
5
0
20100
4 Pa
25
20
15
10
5
0
20100
5 Pa
25
20
15
10
5
0
20100
8 Pa
Distorted deposition profile …
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Let us look at the distributions
25
20
15
10
5
0
20100
Weighted centre position
Error…
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
off centre position (a.u.)
86420
pressure (Pa)
with shutter
without shutter
25
20
15
10
5
2520151050
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And what about the energy ?
0.01
2
4
6
0.1
2
4
6
1
2
4
6
10
average energy (eV)
8 9
0.12 3 4 5 6 7 8 9
12 3 4 5 6 7 8
pressure (Pa)
without shutter
with shutter
Thermal energy