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Detection Methods Coherent ↔ Incoherent Photon Detection ↔ Bolometric Photon Counting ↔ Integrating

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Detection Methods. Coherent ↔ Incoherent Photon Detection ↔ Bolometric Photon Counting ↔ Integrating. Radio Telescopes. Typical Designs Heterodyne Receivers. Jansky’s First Radio Telescope 1933. Grote Reber: 1937 Radio Telescope. The Arecibo Radio Telescope. Heterodyne Receivers. - PowerPoint PPT Presentation

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Page 1: Detection Methods

Detection Methods

• Coherent ↔ Incoherent• Photon Detection ↔ Bolometric• Photon Counting ↔ Integrating

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Radio Telescopes

• Typical Designs• Heterodyne Receivers

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Jansky’s First Radio Telescope

1933

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Grote Reber: 1937 Radio Telescope

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The Arecibo Radio Telescope

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Heterodyne Receivers

• Mix signal and local oscillator• Mixed signal contains

“intermediate frequency”f_signal – f_local but also the sum of the frequencies

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Heterodyne Signal Detection

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MM and Sub-MM Telescopes

• Use both coherent and incoherent detection

• Heterodyne receivers for emission-lines• Mostly bolometers for continuum

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Millimeter Valley on Mauna Kea

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NGC 6334

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SMA Receivers

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Bolometers

• Absorb and thermalize photons• Measure temperature change• Balance between heating and cooling

results in long time constants• Typically used in chopped operation

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Transition Edge Sensors: Extreme sensitivity to small temperature changes allows to build very sensitive bolometer arrays

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Photocathods

• The photoelectric effect• Quantum nature of light• Photomultipliers, channel plates …

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Photocathod Devices

• Cathods• Photomultiplier• Image intensifiers• Microchannel plates

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Physics of Semiconductors

Basic Quantum PhysicsSolids

SemiconductorsPN Junctions

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Semiconductors

• Conduction in semiconductors• Doping

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PN Junctions

• Formation of pn junction• Rectifying properties• Charge separating properties

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Electronics

• PN junctions and photodiodes• Field Effect transistors• Logic devices• Analog switches• Operational amplifiers• A practical example

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Field Effect Transistor

• Junction FET (JFET)• Metal-Oxide-Semiconductor FET

(MOSFET)• CMOS circuits (Complementary Oxide

Semiconductor)

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Fabrication of Integrated Circuits

• Doping• Depositing metal• Growing oxides (as isolators)• All controlled by photoresist masking

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HAWAII-2: Photolithographically Abut 4 CMOS Reticles to Produce Each 20482 ROIC

Twelve 20482 ROICs per 8” Wafer

20482 Readout Provides Low Read Noise for Visible and MWIR

Canon 16mm x 14 mmGCA 20mm x 20 mm

ASML 22mm x 27.4 mmReticle-Stitching: 2048x2048 ROIC

Submicron Stepper Options

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3-D Barrier to Prevent Glow from Reaching the Detector

Metal 1

Metal 2

Metal 3

Poly 1

Analog Capacitor

Low

-Noi

se C

MO

S M

ultip

lexe

r

p-type

n+

HgCdTeDetector

IndiumInterconnect

Overglass

CMOS (LOCOS)

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