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Designing SERDES Applications--82545/82546, 82571/82572 & 631xESB/632xESBApplication Note--AN498
August 2006
AN498 August 20062
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Copyright © 2007, Intel Corporation. All Rights Reserved.
August 2006 AN4983
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
Contents
1.0 Introduction ..............................................................................................................51.1 Scope ................................................................................................................5
2.0 Basic Circuit Design ...................................................................................................72.1 Design and Layout Considerations .........................................................................9
2.1.1 Board Layout Recommendations.................................................................92.1.2 Board Layout Recommendations for Software Compatibility ...........................92.1.3 Impedance Matching............................................................................... 102.1.4 Gigabit Ethernet Controller Dependencies .................................................. 10
3.0 SERDES Specifications ............................................................................................. 133.1 Transmit and Receive Specifications..................................................................... 133.2 Device ID Specifications ..................................................................................... 13
4.0 Testing for PICMG 3.1 Compliance ........................................................................... 154.1 PICMG Test Setup and Specifications ................................................................... 15
5.0 Component/Material Selection ................................................................................ 21
6.0 References .............................................................................................................. 21
7.0 Reference Schematics ............................................................................................. 23
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
AN498 August 20064
Revision History
Date Revision Description
August 2006 1.0 Initial release
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Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
1.0 Introduction
The goal of this document is to enable customers to construct a board layout design using the Serializer-Deserializer (SERDES) interface on Intel Gigabit Ethernet (GbE) controllers. A typical application using the SERDES interface is a GbE fiber design where the electrical interface connects to an optical module. However, another possible application would use the SERDES interface to drive and receive electrical signals over a backplane for board-to-board communication such as in modular servers. The benefit of using the internal SERDES for a backplane is that it reduces the cost, power, and board-size real estate of a design since neither optical module with associated fiber connectors nor copper PHY-related components, such as magnetics and cable connectors, are required. Instead, the electrical signals are sent from the internal SERDES to traces that go to a backplane connection, then over a backplane and another backplane connector to the SERDES-capable link partner for communication.
The use of SERDES is called out in many industry specifications. For example:
• IEEE 802.3z: Gigabit for fiber
• 1000BaseCX: Gigabit over 30 meters of 75 Ω coax cable
• 1000BaseX
• PICMG 3.1: Gigabit over 100 Ω differential backplane
This document was created for use in aiding the design of modular servers or embedded designs that are based on GbE as the protocol for onboard and board-to-board communications. Additionally, it is anticipated that many designs will require compliance with the PICMG 3.1 specification. However, since different Local Area Network (LAN) devices with a SERDES interface might use different DC-biasing and have different signaling voltage levels, there is no single SERDES-SERDES circuit that allows the LAN to work properly with every different possible pair of LAN components. This document is intended to provide basic circuit information; design considerations and testing for PICMG 3.1 compliance that should help a designer overcome many of these issues.
1.1 Scope
This document covers SERDES information for the 82545/82546, 82571/82572, and 631xESB/632xESB. All testing results were performed on modified Intel Network Interface Cards (NICs) using the Intel LAN controller. Similar devices with a SERDES can benefit from this document; however, if using a GbE controller other than the ones described here, designers should verify all device specifications to ensure they meet the requirements of the design.
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Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
2.0 Basic Circuit Design
SERDES is short for a dedicated SERializer / DESerializer pair where typical inputs enter the serializer in a parallel fashion and are then serially aligned so that in one clock period one set of parallel bits (one word) is transmitted.
Figure 1. SERDES Functional Block Diagram
A SERDES design must be treated similar to a typical data transmission network design. The goal is to send data across some distance and have enough S/N (Signal to Noise) ratio at the receive end so that an acceptable level of errors are observed.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
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Figure 2. Basic SERDES-SERDES Backplane Circuit
Designers must consider the signal strength of the transmitter (differential output voltage), the loss due to the transmission media (trace size, shape, length) and receiver sensitivity level (minimum signal level) that detects when a 1 or 0 is being sent. The basic equation is as follows:
Transmitter Output - Physical Medium Induced Loss =Receiver Sensitivity
Ideally, the higher the transmit voltage output level on a SERDES device, the better the design performs. However, most SERDES devices are specified with an output performance range so designers should always design with the minimum, worst-case differential output level to ensure a robust design. Figure 3 shows examples of various devices and the range of their signaling levels.
Figure 3. Peak-to-Peak Voltage Signaling Level of Various Devices
Another factor is the trace shape and length which can be a challenge to a successful design. This is mainly due to the I2R losses of the transmission trace and it determines the loss in signal strength that the transmitted signal is exposed to prior to reaching the receive device. Mechanical connectors can come into play as they disturb the impedance match between the transmitter and receiver which can degrade the signal strength.
The 1000Base-BX GbE backplane specification requires the transmit device and receive device be 100 Ω differentially terminated. Therefore connectors that might distort this impedance generate more loss or noise distortion due to standing waves or Voltage Standing Wave Ratio (VSWR), also termed “insertion loss”. A 1:1 VSWR implies a perfect impedance match between the SERDES device and electrical trace. Any difference or mismatch of these impedances can degrade an optimal power transfer.
Finally, the receive device must be chosen so that when the data signal reaches the end of the line that enough voltage amplitude remains to determine if a 1 or 0 has been sent. The receiver component should be carefully chosen to include adequate design margin above the receive sensitivity. For example, a receiver with the lowest input sensitivity level provides the best margin for a design as it helps make up for the variability of the transmitter, connector, and medium losses.
OOUUTTPPUUTT
DDRRIIVVEE
00 mmVV 2200000011000000 1155000055000000
LV-PECL (1200-2000mV)
LV-PECL (200-2000mV)
82546GB (750 -1350mV)
PicoLight PL-XSL-00513-03 (300-2000mV)
PICMG 3.1 Spec at TP-R (200-1350mV)
PicoLight PL-XSL-00513-03 (600 -1200mV)
PICMG 3.1 Spec at TP-1 (750 -1350mV)
MMeeddiiaa//CCoonnnneeccttoorr LLoossss BBuuddggeett
82546GB (200-2000mV)IINNPPUUTT
SSEENNSSIITTIIVVIITTYY
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Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
2.1 Design and Layout Considerations
2.1.1 Board Layout Recommendations
In Gigabit SERDES-SERDES systems, the main design elements are the GbE controllers, the backplane connectors, and the backplane. Since the transmission line medium extends onto the Printed Circuit Board (PCB), special attention must be paid to layout and routing of the differential signal pairs, as well as to the choice of the connectors. This section discusses the most critical aspects of optimizing and maintaining a usable, valid signal in a SERDES-SERDES design in both directions over the backplane.
The differential pairs should be routed to be as short and symmetrical as possible. The overall length of differential pairs is dependent on meeting Bit Error Rate (BER) requirements which in turn is dependent on material characteristics, S21 loss in the channel, the maximum transmitter output and the minimum receiver input voltage (Rx sensitivity). The general formula used to calculate the minimum received signal for successful reception is:
Rxmin = Txmax - (Connector S21 attenuation + Backplane Trace S21 attenuation)
The lengths of the differential traces (within each pair) should be equal within 50 mils (1.25 mm) and as symmetrical as possible. Asymmetrical and unequal length traces in differential pairs contribute to common mode noise. Strip line is best to use, routed as close to connectors' layer as possible, edge coupled with 100 Ω differential trace pairs. Traces should have at minimum 100 mils spacing between differential pairs with greater than 300 mils recommended to minimize crosstalk between differential pairs. To help minimize EMI problems do not route differential traces near board edges. Within pairs keep traces close as possible to meet 100 Ω differential (<10 mils).
Keep traces as symmetrical as possible when laying out such things as components, pads, and test points keeping components as small as possible. It is critical to minimize stubs which attenuate the signal negatively. Use standard, good trace routing such as avoiding 90 degree bends; instead use two 45 degree bends with beveled corners to obtain 90 degree turns. Avoid routing differential traces near digital signal traces on the same layer and ensure that digital signal traces on adjacent layers cross at 90 degree angles to the differential traces. Keep vias to a minimum, if used at all, using no more than two per trace.
Avoid highly resistive traces by making traces as wide as possible and as thick as possible while maintaining the 100 Ω differential trace impedance. Trace width greater than 8-10 mils width is desirable. Keep transmit traces to the backplane as short as possible with two to four inches being desirable to reduce S21 loss. Additionally, trace routes of long distances should be routed at an off-angle at the x-y axis of the PCB, to distribute the effects of fiberglass bundle weaves and resin rich areas of the dielectric.
2.1.2 Board Layout Recommendations for Software Compatibility
It is recommended that all fiber-based implementations connect the energy sense output of the attached optics to Software Defined Pin (SDP) 1. This allows the software to detect a valid cable much more accurately than possible without it. Intel NIC implementations follow this recommendation and by choosing to include this in the design allows better software re-use and compatibility without requiring significant driver changes. The device EEPROM must be modified to reflect the nature of the pin being a Input pin. Please consult the appropriate EEPROM documentation for details.
For pure SERDES implementations, it is also recommended that an EEPROM be used in order to store driver-needed data for SERDES amplitude attenuation values. This allows for environmental tuning without significant modifications from the Intel driver baseline.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
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These recommendations are based on Intel’s own experience with cost savings and higher product quality via a more refined end-user experience. The marginal cost increase of adding these extra hardware resources can be justified by the savings of software resources to overcome the lack of these recommendations.
2.1.3 Impedance Matching
Maintain 100 Ω +10% differential impedance by choosing the appropriate backplane connector and PCB layout. Match the connectors' impedance as closely as possible. Transmit and receive pairs should be AC coupled through a 0.01uF capacitor to overcome differences in DC levels between the different logic types such as PECL, LVDL and etc. Place capacitors shown in the termination networks as close as possible to the receiver pins. Keep the connectors as close to the GbE controller as possible.
Connectors must be impedance-matched and specified for 1.25 GHz first harmonic of the data rate and 625 MHz fundamental frequency. Pairs must be separated from adjacent pairs by having grounds between them on the connectors. The Tyco® HM-Zd or equivalent connector is a valid reference for performance when selecting a connector for your design.
2.1.4 Gigabit Ethernet Controller Dependencies
2.1.4.1 Output Voltage Adjustment
82545 and 82546
The differential output amplitude can be adjusted by changing the value of the Extended PHY Specific Control 2 Register (Address: 26) bits 3:0. Each bit set increases the amplitude as listed in Table 1.
Table 1. SERDES Typical Output Peak-to-Peak Differential Voltage vs. Bit Setting (82545 & 82546)
A driver, including Intel's, can be used to set the above register during initialization by placing the values desired in bits 3:0 of Word 06h in the EEPROM. For customer developed drivers, design the driver to read these bits and transfer the values to the Extended PHY Specific Control 2 Register.
82571 and 82572
For the 82571 and 82572, the differential output amplitude is controlled in the EEPROM image. Besides the default amplitude, there are Low and High Amplitude settings.
Bits 3:0 Register Setting Typical P-P Voltage Output at TP-1
008h 980 mV
009h 1020 mV
00Ah 1160 mV
00Bh 1270 mV
00Ch (default) 1370 mV
00Dh 1450 mV
00Eh 1530 mV
00Fh 1590 mV
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Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
The chosen configuration for the low-range amplitude is 0x29:
The chosen configuration for the high-range amplitude is 0x67:
The middle range (Average) is unchanged (0x49 by default EEPROM).
To obtain an EEPROM image that sets an amplitude other than the default, contact your Intel representative.
2.1.4.2 Signal Detect
82545/46
The signal detect pin on the GbE controller should be pulled up if no optical module exists to control link detection. When not using auto-negotiation, such as when the link partner does not support it, software should check for link before transmitting. This can be done by verifying that the MAC is synchronized by checking that bit 30 in the Receive Configuration Word Register [RXCW (00180h; R)] is set (1) and that there are no symbol errors by checking that bit 27 of RXCW is clear (0). If both partners support auto-negotiation this software check is not necessary as that process resolves the link process. However, in both cases link detect should be pulled up to 3.3 V dc.
Some devices might be capable of looking at the incoming stream of Rx symbols and determining link/synchronization status solely from the symbol content. However, when in internal SERDES mode, the Ethernet controller uses SIGDET as the primary indication of link up/down status.
Link status is a direct function of SIGDET regardless of whether HW auto-negotiation is enabled or not. Therefore, even if HW auto-negotiation is enabled, if SIGDET is not asserted, link up is not indicated.
In circumstances where SIGDET is connected to VCC and HW auto-negotiation is disabled, the Ethernet controller always reports that link is up.
82571/72
In a SERDES backplane application, Signal Detect is not used. SRDSA_SIG_DET and SRDSB_SIG_DET should be pulled up, either by floating them using the internal pull-ups or using external resistors to pull them up on the board.
631xESB/632xESB
Besides copper, the SerDes port can also work with fiber (1G transceiver). In this case, the LINK_0 and LINK_1 pins are used as SIG_DET (signal detect) signals.
When high, SIG_DET indicates that a signal is detected; when low, it indicates that no signal is detected.
For non-optical connection in backplane applications, these signals must be pulled up.
Average (mv) Minimum (mv) Maximum (mv)
852.7222846 752.344 966.406
Average (mv) Minimum (mv) Maximum (mv)
1175.490504 1024.22 1322.66
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
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2.1.4.3 Signal Reception (All)
The receiver on the GbE controller must be able to receive any signal transmitted by a compliant transmitter through a compliant channel. For example, the GbE controller’s link partner’s transmitter must transmit signals that the GbE controller is capable of successfully receiving and deciphering through the backplane traces that meet the layout, length and other specifications as described in the PICMG 3.1 specification. Conversely, the link partner of the GbE controller must be capable of receiving and correctly understanding signals transmitted from the GbE controller. This requires verifying that the SERDES output and input of the GbE controller is compatible with its link partner's SERDES input and output respectively by carefully reviewing both parts' receiver and transmitter specifications.
Rigorous testing should then be performed on a prototype to verify that both parts and the signals transmitted minus losses are able to meet this receiver requirement. This testing should again be repeated on multiple finished product boards over all conditions that the finished product is subjected to such as supply voltage variations, ambient temperature variations, humidity, and etc. Failing to do this testing can result in failures of the product at a customer's site.
2.1.4.4 Pre-Emphasis
82545/46
Pre-emphasis control is available in the Extended PHY Specific Control 2 Register (Address: 26), bit 13 in GbE controllers. With the default setting of (0) the transmitted differential output amplitude includes 7% pre-emphasis value and can be increased to 15% by setting bit 13 to (1). The benefits of pre-emphasis are in high-speed data rate applications across longer (>30 inches) backplane lengths with multiple connectors (> 2). When a high-speed signal is traveling through a long PCB trace, the signal is degraded due the electrical properties of the PCB trace. The higher the frequency and the longer the PCB trace, the higher the degradation due to the bandwidth limitation of the PCB trace. When the data rate is higher than the bandwidth of the PCB trace, degradation of the signal occurs.
Although the simple resolution might seem to be to increase the amplitude of the signal, this does not address the problem of signal roll off or pattern dependent jitter and tends to increase noise and power consumption. The pre-emphasis technique has been proven to be an effective way to reduce such effects, especially in backplane designs, because it boosts the high frequency energy whenever there is a transition in the data which is when most problems occur.
Since high frequency components are attenuated more than low frequency components this results in a more equalized eye pattern at the receiver making it easier for the receiver to decipher the signal. A combination of both adjusting the output voltage level and the pre-emphasis bit setting is useful when problems arise with receiving transmitted information assuming that the design meets the layout requirements in this document. With improper layout it is quite likely that it will not be possible to overcome the problem without correcting the layout.
82571/72
By default, pre-emphasis is not enabled for the 82571/72. It can be enabled with the EEPROM image. When pre-emphasis is enabled, it is approximately 3.5dB. To obtain an EEPROM image that enables pre-emphasis for the 82571/72, contact your Intel representative.
631xESB/632xESB
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Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
Pre-emphasis is not supported.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
14
3.0 SERDES Specifications
3.1 Transmit and Receive Specifications
Table 2. SERDES Specifications
3.2 Device ID Specifications
The Device ID must be set (forced) for SERDES-SERDES interface operation.
This ensures proper functionality with Intel drivers and the boot agent.
Parameter Value
Transmit Measured at TP-T
Data Rate 1000 Mb/s
Nominal Signal Speed 1250 MBd
Clock Tolerance +/-100 ppm
Differential Output Amplitude (peak-to-peak) 750 - 1350 mV (Adjustable)
Return Loss 15 dB Maximum (at TP-1)
Impedance 100 +/- 10% Ωs
Total Jitter (Random and Deterministic) <223 pS
Receive Measured at TP-R
Data Rate 1000 Mb/s
Nominal Signal Speed 1250 MBd
Clock Tolerance +/-100 ppm
Input Sensitivity 200 - 2000 mV
Differential Skew 175 pS Maximum
Differential Return Loss 15 dB Maximum
Common Mode Return Loss 6 dB Maximum (200 MHz to 2.5 GHz)
Impedance 100 +/- 10% Ωs
Fastest Rise Time 85 pS Maximum
Total Jitter (Random and Deterministic) <528 pS
Device Device ID (SERDES)
82545GM 1028h
82546GB 107Bh
82571EB (SERDES) 1060h
82572EI (SERDES) 107Fh
82571EB (Fiber) 105Fh
82572EI (Fiber) 107Eh
631xESB/632xESB (SERDES) 1098h
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
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4.0 Testing for PICMG 3.1 Compliance
Thorough testing of the circuit is a fundamental requirement for all backplane designs. If resources are not available to perform these tests, outside contractors with these capabilities will be able to assist. While full PICMG 3.1 testing is optimal, the crucial tests for SERDES-SERDES backplane designs are listed here and in the PICMG 3.1 specification:
1. Insertion loss: Use a Vector Network Analyzer (VNA) to check insertion loss. It is also very useful to provide frequency domain measurements, measure impedance characteristics, transfer functions and various other losses in the channel.
2. Jitter: Jitter is tested as described in the PICMG specification using an eye pattern and a Signal Integrity Analyzer. Backplane jitter is specified in terms of both total jitter (TJ) and deterministic jitter (DJ):
a. TJ = sum of the peak-to-peak DJ and RJ (random jitter)
b. RJ = jitter generation from the several random processes
3. DJ = jitter from a variety of systematic effects (Duty Cycle Distortion, Inter Symbol Interference, periodic jitter).
The analyzers acquire signals and perform statistical analysis to separate DJ & RJ from TJ. Some scopes can also be used for eye diagram and jitter analysis. Such scopes provide the masks for Eye Diagrams.
4. Bit Error Rate (BER): The BER provides a good indication of real world network performance. BER testing should be performed with the length of backplane desired and several link partners. The test limit is 10-12 for any size of frame. BER is measured with a Bit Error Ratio Tester (BERT) available from several manufacturer of network test equipment. A BERT is used to create the “stressed eye” or worst-case packet waveform as seen by the receiver. Stressed eye includes both worst-case waveform amplitude and edge variation. BER can also be measured using the Intel® gigabit IEEE conformance test kit which includes the software, pattern files and suggested test setups to perform BER testing. Contact your Intel FAE to obtain this kit.
5. Return loss: Use a vector network analyzer to check return loss.
4.1 PICMG Test Setup and Specifications
1000BASE-BX is the PICMG electrical specification for transmission of 1000BASE-X encoded data over a 100-Ω backplane. The test points TP-T and TP-R are mandatory compliant points. All specifications are differential (see Figure 4).
Figure 4. SERDES Ethernet Electrical Environment and Test Points
Confirm that the input impedance at connection TP-1 in Figure 4 is 100 ± 30 Ω and at connection TP-1 is 100 ± 10 Ω and 100 ± 30 Ω at TP-T.
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Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
Transmitted Electrical Specification at TP-T
• The output driver is assumed to have output levels supporting the PIMG 3.1 test point (TP-T).
• The test point is the backplane side of the mated HM-ZD connector as shown in Figure 5.
Figure 5. Transmit Test Point at TP-T
Note: Capacitor and resistor tolerance is +/- 1%.
Transmitter Testing at TP-T
1. Differential output amplitude (peak-to-peak)
2. Rise/Fall time (20%-80%)
3. Differential skew
4. Normalized eye diagram mask at TP-T
5. Absolute eye diagram mask at TP-T
6. Transmitted total jitter and deterministic jitter
Note: Maximum drive amplitude of any PICMG 3.1 driver must not exceed 1600 mV peak-to-peak.
Table 3. Transmitter Specifications at TP-T
Test Parameter PICMG 3.1 Value
Differential Output Amplitude (peak-to-peak) 750 - 1350 mV
Rise Time (20% - 80%) 85 - 327 pS
Fall Time (20% - 80%) 85 - 327 pS
Differential Skew (Maximum) 25 pS
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
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Table 4. Transmitted Eye Diagram Mask Specification at TP-T
Figure 6. Absolute Transmit Eye Diagram Mask at TP-T
Table 5. Transmitted Jitter Specifications at TP-T
Test Parameter PICMG 3.1 Eye Diagram Mask Requirement
Normalized Eye Diagram MaskNormalized Amplitude Normalized Time (UI)
0.2 - 0.8 X1 (0.14), X2 (0.34)
Absolute Eye Diagram MaskDifferential Amplitude (mV) Normalized Time (UI)
325 ~(-325) X1 (0.14), X2 (0.34)
PICMG 3.1 Transmit Jitter Budget
Parameter Total Jitter Deterministic Jitter
UI PS UI PS
Data TIE 0.279 223 0.14 112
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Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
Receiver Electrical Specifications at TP-R
The receiver is AC-coupled to the media through a receiver network. The receive network terminates the Tx/Rx connection by an equivalent impedance of 100 Ω, as specified in Figure 7.
Figure 7. Receiver Testing
1. Received differential skew (max) at TP-R
2. Received input sensitivity at TP-R
3. Received eye diagram mask at TP-R
4. Bit error rate (BER) testing at TP-R
5. Received total jitter and deterministic jitter
Table 6. Received Eye Diagram Mask Specification at TP-R
Data PLL TIE 0.279 223 0.14 112
Clock TIE 0.279 223 0.14 112
Clock PLL TIE 0.279 223 0.14 112
PICMG 3.1 Transmit Jitter Budget
PICMG 3.1 Receive Eye Diagram Mask Requirement
Backplane Eye Mask TestDifferential Amp (mV) Normalized Time (UI)
100~(-100) 0.3, 0.5, and 0.7
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
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Figure 8. Received Eye Mask at TP-R After 25-Inch Backplane
Table 7. Received Input Specifications at TP-R
Anasoft® provides a complete signal integrity simulation package, linking mechanical drawings to electrical simulation packages to board layouts for 3-D field solver analysis.
PICMG 3.1 Receive Specifications
Sensitivity 200 to 1350 mV
Differential Skew 175 pS
Jitter Budget Total Jitter Differential Jitter
UI PS UI PS
Data TIE 0.66 528 0.4 320
Data PLL TIE 0.66 528 0.4 320
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
22
5.0 Component/Material Selection
There are a variety of applications that use GbE SERDES for its cost saving benefits. However, designers must carefully select components that provide the required performance. The GbE controllers were designed to be compliant with the PICMG 3.1 specifications and thus minimize risk of an improper backplane design. As a general rule, backplane designs should be kept as short as possible due to signal degradation in long traces, especially when using FR4 fabric for the PCB.
Other less “lossy” PCB materials, such as “Rogers”, are available but these can be more costly than FR4. When making design trade-offs to save costs, designers need to understand the impact on the performance and overall back plane design. This means careful attention to layout to maintain the 100 Ω differential impedance and testing thoroughly both on the prototype and the final production boards. Should the backplane exceed 30 inches there is much more likelihood that signal degradation may be too great to compensate, even with amplitude adjustment--especially on FR4 PCB material.
Also, using connectors of a lower quality than HM-Zd type can increase signal distortion. With shorter backplanes, there should be less trace signal degradation and the design might be able to afford slightly more signal degradation at the connector. In all cases, customers should perform thorough testing to ensure the critical components on multiple boards thorough all the conditions meet the requirements in their final application(s). The PICMG 3.1 specification is a valid reference for this compliance testing.
6.0 References
It is assumed that the designer is acquainted with high-speed design and board layout techniques. Documents that can provide additional information are:
• 82546 Gigabit Ethernet Controller Datasheet.
• 82546 Gigabit Ethernet Controller Design Guide.
• 82571EB/82572EI Gigabit Ethernet Controller Datasheet.
• 82571EB/82572EI Gigabit Ethernet Controller Design Guide.
• 631xESB/632xESB Gigabit Ethernet Controller Datasheet
• PICMG® 3.1 Ethernet/Fibre Channel Over PICMG 3.0 Specification.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
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7.0 Reference Schematics
This section contains SERDES reference schematics for the 82545/82546 & 82571/82572.
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M, F
lash
5 - F
IBER
Lase
r co
nnect
ions
6 - V
olta
ge R
egula
tors
7 - S
ER
DES
Back
pla
ne C
onnect
ions
8 - D
ecouplin
g1
.0
82
54
6G
BR
EFER
EN
CE D
ES
IG
N(S
ER
DES
/FIB
ER
)
82546G
B R
efe
rence D
esig
n
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
26
8/1
7/2
004
02
R
A
RE
V
SH
EE
TD
AT
E
DW
G. N
O.
SC
ALE
CSIZ
E
TIT
LE
AP
PR
OV
ALS
PB
A N
O.
DR
AW
N
CH
EC
KE
D
EN
GR
AP
VD
AP
VD
AP
VD
2
DA
TE
1
BCD
DA
TE
DE
SC
RIP
TIO
NRE
VIS
ION
S1
23
4
RE
V
56
78
D C B A
87
65
43
PO
WE
R B
LO
CK
DIA
GR
AM
FU
NC
TIO
NA
L B
LO
CK
DIA
GR
AM
1.0
82546G
B R
efere
nce
Des
ign
PC
I /
PC
I-X
Inte
l 8
25
46
GB
:D
ua
l P
ort
LA
N C
on
tro
lle
rE
EP
RO
M
Fla
sh
Bo
ot
RO
M
Ad
dre
ss
/ D
ata
Ad
dre
ss
/ D
ata
Op
tic
al
Tra
ns
ce
ive
r "
B"
or S
erD
es
Ba
ck
pla
ne
Ch
an
ne
l "B
"
1.2
5 G
Bd
Op
tic
al
Tra
ns
ce
ive
r "
A"
or S
erD
es
Ba
ck
pla
ne
Ch
an
ne
l "
A"
1.2
5 G
Bd
PCI Address / Data
25
MH
z X
tal
Inte
l 8
25
46
GB
:D
ua
l P
ort
LA
N C
on
tro
lle
r
1.5
V
Re
gu
lato
r
2.5
V
Re
gu
lato
r
CT
RL
_2
5A
CT
RL
_1
5
27
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
64 528tib agi
G la uD
rellortnoC t enrehtEsp b
M0001/ 00 1/0 1
mm12 x
mm1 2
4 fo 1
mm1 2 x
mm12
64528t ibagi
G lauD
rellortnoC tenrehtEspb
M0001/001/01
4 fo 2
letnI
R
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et e
cn
amr
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oc
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alu
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htiw yrav lli
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ediv o rp ot spac gnidaol eter csid.)
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cn
eref
eR
BG
64
52
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da
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nio
P ts
eT
wei
V k
col
C
ro xu A_V 3.3 ot O IV tcen noC
eht ot gnidrocca BSV5 ICP.e su ni g nill ang is
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
28
8/1
7/2
004
04
R
A
RE
V
SH
EE
TD
AT
E
DW
G. N
O.
SC
ALE
CSIZ
E
TIT
LE
AP
PR
OV
ALS
PB
A N
O.
DR
AW
N
CH
EC
KE
D
EN
GR
AP
VD
AP
VD
AP
VD
2
DA
TE
1
BCD
DA
TE
DE
SC
RIP
TIO
NRE
VIS
ION
S1
23
4
RE
V
56
78
D C B A
87
65
43
82
54
6
Du
al
Gig
ab
it
Eth
ern
et C
on
tro
lle
r
10
/1
00
/1
00
0M
bp
s
21
mm
x 2
1m
m
3 o
f 4
4 o
f 4
21
mm
x 2
1m
m
82
54
6
Du
al
Gig
ab
it
Eth
ern
et C
on
tro
lle
r
10
/1
00
/1
00
0M
bp
s
93C
66
82546G
B R
efe
rence
Des
ign
Seri
al EEPR
OM
OP
TIO
NA
L: F
LA
SH
No
te:
Do
No
t S
tuff
un
less r
eq
uir
ed
by E
EP
RO
M v
en
do
r
1.0
Pla
ce c
aps c
lose
to p
art
in p
lane
No
te:
Th
is c
on
ne
ctio
n a
llow
s c
om
pa
tib
ility
with
fla
sh
pa
rts h
avin
g g
rea
ter
me
mo
ry c
ap
acity.
29
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
8/1
7/2
004
05
R
A
RE
V
SH
EE
TD
AT
E
DW
G. N
O.
SC
ALE
CSIZ
E
TIT
LE
AP
PR
OV
ALS
PB
A N
O.
DR
AW
N
CH
EC
KE
D
EN
GR
AP
VD
AP
VD
AP
VD
2
DA
TE
1
BCD
DA
TE
DE
SC
RIP
TIO
NRE
VIS
ION
S1
23
4
RE
V
56
78
D C B A
87
65
43
LC
- O
ptical
Tra
nsceiv
er
LC
- O
ptical
Tra
nsceiv
er
Insta
ll t
he
se
co
mp
on
en
ts o
nly
if
usin
g t
he 8
25
46
wit
h a
fib
er m
odu
le.
Fo
r S
erD
es b
ackp
lan
e m
od
e -
See S
erD
es b
ackp
lan
e o
ptio
n.
OPTIO
N:
FIBER
MO
DU
LE C
ON
NECTIO
N
No
te
:
Re
fe
re
nce
op
tic
al m
od
ule
s c
on
ta
in
AC
co
up
lin
g c
ap
s o
n S
erD
es P
ins.
No
te
:
Re
fe
re
nce
op
tic
al
mo
du
les c
on
ta
in
AC
co
up
lin
g c
ap
s o
n S
erD
es P
ins.
1.0
82546G
B R
efe
rence D
esig
n
TO
PO
RT B
TO
PO
RT A
No
te:
Stu
ff f
or
fib
er
mo
de
on
ly -
em
pty
fo
r b
ackp
lan
e m
od
e.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
30
8/1
7/2
004
06
R
A
RE
V
SH
EE
TD
AT
E
DW
G. N
O.
SC
ALE
CSIZ
E
TIT
LE
AP
PR
OV
ALS
PB
A N
O.
DR
AW
N
CH
EC
KE
D
EN
GR
AP
VD
AP
VD
AP
VD
2
DA
TE
1
BCD
DA
TE
DE
SC
RIP
TIO
NRE
VIS
ION
S1
23
4
RE
V
56
78
D C B A
87
65
43
1.0
82546G
B R
efere
nce D
esig
n
No
te:
Stu
ff f
or
Ba
ckp
lan
e m
od
e o
nly
- e
mp
ty f
or
Fib
er
mo
de
.
OPTIO
N:
SER
DES B
AC
KP
LA
NE C
ON
NECTIO
N SER
DES
PO
RT B
SER
DES
PO
RT A
Backp
lan
e C
on
necto
r(G
en
eri
c)
Insta
ll t
he
se
co
mp
on
en
ts o
nly
if
usin
g t
he 8
25
46
wit
h a
backp
lan
e c
on
necto
r
For F
IB
ER
mod
e -
See f
iber o
ptio
n.
31
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
8/1
7/2
004
07
R
A
RE
V
SH
EE
TD
AT
E
DW
G. N
O.
SC
ALE
CSIZ
E
TIT
LE
AP
PR
OV
ALS
PB
A N
O.
DR
AW
N
CH
EC
KE
D
EN
GR
AP
VD
AP
VD
AP
VD
2
DA
TE
1
BCD
DA
TE
DE
SC
RIP
TIO
NRE
VIS
ION
S1
23
4
RE
V
56
78
D C B A
87
65
43
1.0
82546G
B R
efere
nce
Des
ign
PO
WE
R R
EG
UL
AT
IO
N
1.5
V I
nte
rg
ra
te
d L
ine
ar R
eg
ula
to
r
2.5
V I
nte
rg
ra
te
d L
ine
ar R
eg
ula
to
r
RE
SE
T S
up
ervis
or
Op
tio
na
l C
ap
Op
tio
na
l C
ap
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
32
8/1
7/2
004
08
R
A
RE
V
SH
EE
TD
AT
E
DW
G. N
O.
SC
ALE
CSIZ
E
TIT
LE
AP
PR
OV
ALS
PB
A N
O.
DR
AW
N
CH
EC
KE
D
EN
GR
AP
VD
AP
VD
AP
VD
2
DA
TE
1
BCD
DA
TE
DE
SC
RIP
TIO
NRE
VIS
ION
S1
23
4
RE
V
56
78
D C B A
87
65
43
Op
tio
na
l C
ap
acito
r site
s w
ill p
rovid
e b
ett
er
de
co
up
ling
fo
r th
e d
esig
n.
Op
tio
na
l C
ap
s
Op
tio
na
l C
ap
s
82546G
B R
efere
nce
Des
ign 1
.0
Byp
ass C
ap
s f
or
LA
N c
on
tro
ller
- P
lace
Clo
se
To
Th
e D
evic
e I
n P
lan
e
DECO
UPLIN
G
Op
tio
na
l C
ap
s
33
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
DN
P -
Do
No
t P
op
ula
te s
ym
bo
l.T
his
is a
co
mp
on
en
t stu
ffin
g o
pti
on
fo
r an
op
tio
nal
featu
re,
sp
ecia
l d
eb
ug
or
testi
ng
pu
rpo
ses.
82571E
B R
efe
ren
ce D
esig
n -
SE
RD
ES
.
PA
GE I
ND
EX
1
- T
itle
Page
2
- F
unctional Blo
cks
3
- 8
2571EB M
DI,
SERD
ES,
EEPRO
M,
Fla
sh &
SM
Bus
inte
rfaces.
4
- 8
2571EB V
CC,
VD
D a
nd V
SS C
onnections.
5
- 8
2571EB P
CI
Expre
ss
JTA
G a
nd o
ther
inte
rfaces.
6
- F
LA
SH
and E
Epro
m d
evic
es.
7.
- S
ERD
ES L
ase
r connecti
ons.
8.
- S
ERD
ES b
ackpla
ne c
onnecto
r
For
pow
er
deliv
ery
solu
tions
refe
r to
the
"82571EB/8
2572EI
Gig
abit
Eth
ern
et
Contr
olle
r D
esi
gn G
uid
e"
Applic
ati
on N
ote
(A
P-4
47)
Rev. 6
.0
11/2
005
82
57
1E
BR
EFE
RE
NC
E D
ES
IGN
(SE
RD
ES
/FIB
ER
)
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
34
8257
1EB
Ref
. Des
ign
2
Fun
ctio
na
l Blo
ck
Op
tio
n A
SE
RD
ES
Las
er.
Op
tio
n B
SE
RD
ES
Bac
kpla
ne.
SE
RD
ES
Port
B
Port
A
SPI
FLA
SH
SPI
EE
PRO
M
Pag
es 7
-8P
ages
3,4
,5
Not
sho
wn
for
SE
RD
ES
Des
ign
Pag
e 6
Pag
e 5
JTA
G
CO
PPE
R P
HY
8257
1EB
LA
NC
ON
TR
OL
LE
R
Pag
e 6
Pag
es 3
SM
Bus
/ FM
L
Pag
es 5
PCI-E
xpre
ss -
x4
35
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
SDP I/F
LEDs PORT A
SMBus
Serial FLASHEEPromEthernet Port A
SERDES PORTS A & B
1m
m P
itch
16
mm
x 1
6m
m B
GA
82
57
1E
B
PC
I -
E1
0/1
00
/10
00
Mb
ps
Eth
ern
et C
on
tro
ller
1 O
F 3
Ethernet Port BLEDs PORT B
Ref
ere
to d
esig
n gu
ide
for
SMBu
s pu
ll-up
val
ues.
Mak
e lo
ad c
aps
5% C
OG
.Ca
n be
040
2, 0
603
or08
05.
8257
1EB
Ref
. Des
ign
Crys
tal l
oad
cap
valu
es w
ill v
ary
with
pad
size
and
sta
ckup
adj
ust
crys
tal
disc
rete
load
ing
caps
to
prov
ide
25.0
00 M
Hz
(+/-
30
ppm
).
Ro
ute
as
dif
fere
nti
alp
airs
to
tes
t p
oin
tsp
lace
d n
ear
the
825
71E
B.
TO S
ER
DE
SP
OR
TS A
& B
3In
stal
l on
ly f
or
spec
ial d
ebu
g o
r te
stin
g p
urp
ose
s
8257
1EB
MD
I, S
ERD
ES, F
LASH
AND
EEP
RO
MIN
TER
FACE
S
No
te:
Pin
R11
C
on
nec
tio
nD
epen
ds
on
m
anag
abil
ity
mo
de
des
ired
-
Co
nsu
lt D
esig
nG
uid
e.
Th
e P
HY
is p
ow
ered
do
wn
wh
en in
SE
RD
ES
mo
de.
Th
eref
ore
, th
ese
pin
s d
o n
ot
req
uir
e p
ull-
up
o
r p
ull-
do
wn
res
isto
rs.
Th
e P
HY
is p
ow
ered
do
wn
wh
en in
SE
RD
ES
mo
de.
Th
eref
ore
, th
ese
pin
s d
o n
ot
req
uir
e p
ull
-up
o
r p
ull-
do
wn
res
isto
rs.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
36
82
57
1E
BP
CI-
E1
0/1
00
/10
00
Mb
ps
Eth
ern
et C
on
tro
ller
1m
m P
itch
16
mm
x 1
6m
m B
GA
2 o
f 3
VSS Pins
VDD/VCC Pins
4
8257
1EB
VCC
, VD
D &
VSS
CO
NNEC
TIO
NS
Op
tio
nal
: C
on
nec
t to
sys
tem
th
erm
alm
anag
emen
t co
ntr
olle
r.
8257
1EB
Ref
. Des
ign
NO
TE
: P
ow
er d
eliv
ery
for
8257
1EB
.T
he
1.1V
an
d 1
.8V
su
pp
lies
mu
st
be
sep
arat
e su
pp
lies
for
the
Eth
ern
et C
on
tro
ller
on
ly.
Co
nsu
lt D
esig
n G
uid
e.
37
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
3 O
F 3
82
57
1E
B
PC
I -
E1
0/1
00
/10
00
Mb
ps
Eth
ern
et C
on
tro
ller
16
mm
x 1
6m
m B
GA
1m
m P
itch
PCI Express RECEIVE
PCI Express TRANSMITJTAG
Pla
ce c
aps
wit
hin
25
0 m
ils o
f th
e P
CI-
E T
ran
smit
ters
.
Pla
tfo
rm S
MB
us
pu
ll-u
p
dic
tate
s s
tuff
ing
op
tio
ns
for
this
pu
ll-u
p r
esis
tor.
Co
nn
ect
to G
P p
ort
pin
so
n S
up
er
IO t
hat
ret
ain
va
lue d
uri
ng
res
et.
No
rmal
ly n
ot
con
nect
ed.
See
des
ign
gu
ide
for
det
ails
.
If u
sin
g s
yste
m le
vel
JTA
G, d
o n
ot
po
pu
late
thes
e re
sist
ors
.
B0
and
Su
bse
qu
ent
Ste
pp
ing
s O
nly
PC
I-E
X R
eset
Gen
erat
ed b
yP
latf
orm
Co
nn
ect
to G
P P
ort
on
Su
per
I/O
th
at r
etai
ns
its
valu
e d
uri
ng
res
et.
Inst
all
on
ly f
or
spec
ial
deb
ug
or
test
ing
pu
rpo
ses
Rec
eiver
inp
uts
sh
ou
ld b
eA
C c
ou
ple
d f
rom
tra
nsm
itte
rso
urc
e (n
ot
sh
ow
n)
per
PC
IEX
sp
ec.
Ro
ute
as
dif
fere
nti
al p
airs
.T
race
len
gth
s sh
ou
ld b
eeq
ual
wit
hin
0.0
05".
Fo
ra
pai
r.
Ro
ute
as
dif
fere
nti
al p
air
s.T
race
len
gth
s s
ho
uld
be
equ
al w
ith
in 0
.005
". F
or
a p
air
in e
ach
seg
men
t.
5
PC
I Exp
ress
Tra
nsm
itte
rd
iffe
ren
tial
pair
s fr
om
th
esy
stem
bo
ard
.
PC
I Exp
ress
Rec
eive
r d
iffe
ren
tial
pai
rs t
o t
he
syst
em b
oar
d.
8257
1EB
PCI
EXPR
ESS,
JTA
GA
ND S
MBU
S IN
TER
FACE
S
Ro
ute
to
ICH
wak
e p
in
8257
1EB
Ref
. Des
ign
See
Des
ign
Gu
ide
for
FL
B f
un
ctio
nal
ity.
If t
he
8257
1EB
is
tosu
pp
ort
au
x w
ake
R50
m
ust
be
inst
alle
d.
LA
N P
OW
ER
GO
OD
:S
ee D
esig
n G
uid
e.D
o n
ot
con
nec
t an
yth
ing
to
th
is p
in.
Th
ese
pin
s ar
e re
serv
ed.
Pu
ll-u
ps
are
req
uir
ed
as
thes
e p
ins
def
ine
test
mo
des
in o
ther
sta
tes.
Th
ese
can
be
sin
gle
04
02 p
art
per
pin
or
a R
pac
k. D
o n
ot
use
a
sin
gle
res
isto
r fo
r al
l pin
s.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
38
Byp
ass
Cap
s fo
r 1.
1V C
OR
EV
DD
Pla
ce C
lose
To
LAN
sili
con
Byp
ass
Cap
s fo
r 1.
8V V
DD
Pla
ce C
lose
To
LAN
sili
con
DEC
OUP
LING
Fla
sh o
ptio
nal
SP
I E
EP
RO
M
6
Se
ria
l FL
AS
H
FLA
SH A
ND E
EPR
OM
8257
1EB
Ref
. Des
ign
Opt
ion
al c
aps:
Pla
ce c
lose
to
silic
on
as p
ossi
ble
OR
pla
ce o
n se
cond
ary
side
dir
ectl
y o
n th
e B
GA
po
wer
pin
s.D
NP
unl
ess
need
ed.
Op
tiona
l cap
s:P
lace
clo
se to
sili
con
as
pos
sib
leO
R p
lace
on
sec
onda
ry s
ide
dire
ctly
on
the
BG
A p
ower
pin
s.D
NP
unl
ess
need
ed. O
ptio
nal c
aps:
Pla
ce c
lose
to
sili
con
as
poss
ible
OR
pla
ce o
n s
econ
dary
sid
edi
rect
ly o
n th
e B
GA
pow
er p
ins.
DN
P u
nle
ss n
eede
d.
39
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
LC -
Opt
ical
T
rans
ceiv
er
LC -
Opt
ical
T
rans
ceiv
er
SE
RD
ES
PO
RT
A
SE
RD
ES
PO
RT
B
Pla
ce c
lose
toT
rans
ceiv
er
Pla
ce fi
lter
as c
lose
as
pos
sib
le to
lase
r.P
lace
sm
alle
st v
alu
ed c
aps
clos
est
to la
ser
VC
C.
Pla
ce c
lose
toT
rans
ceiv
er
OPT
ION
A:
SER
DES
/LA
SER
CO
NNEC
TIO
N 7
Pla
ce f
ilte
r as
clo
se a
s po
ssib
le t
o la
ser.
Pla
ce s
mal
lest
val
ued
ca
ps c
lose
st t
o la
ser
VC
C.
8257
1EB
Ref
. Des
ign
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
40
8
Bac
kpla
ne
Co
nn
ecto
r(G
ener
ic)
SER
DES
POR
T A
SER
DES
POR
T B
OPT
ION
B: S
ERD
ES B
ACK
PLA
NE C
ONN
ECTI
ON
8257
1EB
Ref
. Des
ign
41
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
DN
P -
Do
No
t P
op
ula
te s
ym
bo
l.T
his
is a
co
mp
on
en
t stu
ffin
g o
pti
on
fo
r an
op
tio
nal
featu
re,
sp
ecia
l d
eb
ug
or
testi
ng
pu
rpo
ses.
82572E
I R
efe
ren
ce D
esig
n -
SE
RD
ES
Rev. 3
.0
11/2
005
82
57
2E
IR
EFE
RE
NC
E D
ES
IGN
(SE
RD
ES
/FIB
ER
)
PA
GE I
ND
EX
1
- T
itle
Page
2
- F
uncti
onal Blo
cks
3
- 8
2572EI
MD
I, S
ERD
ES,
EEPRO
M,
Fla
sh &
SM
Bus
inte
rfaces.
4
- 8
2572EI
VCC,
VD
D a
nd
VSS C
onnecti
ons.
5
- 8
2572EI
PCI
Expre
ss
JTA
G a
nd o
ther
inte
rfaces.
6
- F
LA
SH
and E
Ep
rom
devic
es.
7.
- S
ERD
ES L
ase
r connecti
ons.
8.
- S
ERD
ES b
ackp
lane c
onnecto
r
For
pow
er
deliv
ery
solu
tions
refe
r to
the
"82571EB/8
2572EI
Gig
abit E
thern
et
Con
trolle
r D
esign G
uid
e"
Applic
ati
on N
ote
(A
P-4
47)
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
42
Page
s 3
Pag
es 5
SM
Bus
/ FM
L
PC
I-Exp
ress
- x
4
Page
6
Op
tio
n A
SE
RD
ES
- F
IBE
RO
pti
on
B S
ER
DE
S -
BA
CK
PL
AN
E
SE
RD
ES
Port
A Pag
es 7
- 8
Fun
ctio
na
l Blo
ck
8257
2EI
LA
NC
ON
TR
OL
LE
R
CO
PPE
R A
FE
Page
6
Not
show
n fo
r S
ER
DE
S D
esi
gn
Page
s 3,4
,5
SPI
EE
PR
OM
SPI
FLA
SH
JTA
G Pag
e 5
2
8257
2EI R
ef. D
esig
n
43
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
1 O
F 3
82
57
2E
I
PC
I -
E1
0/1
00
/10
00
Mb
ps
Eth
ern
et
Co
ntr
oll
er
16
mm
x 1
6m
m B
GA
1m
m P
itch
SERDES PORTS A
Ethernet Port A EEProm Serial FLASH
SMBus
LEDs PORT A
SDP I/F
Th
e P
HY
is
po
were
d d
ow
nw
hen
in
SE
RD
ES
mo
de.
Th
eref
ore
, th
ese
pin
s d
o n
ot
req
uir
e p
ull
-up
o
r p
ull-d
ow
n r
esi
sto
rs.
Th
ese
pin
s a
re d
isab
led
an
d d
o n
ot
req
uir
e p
ull
-up
o
r p
ull-d
ow
n r
esi
sto
rs.
Th
ese
pin
s are
dis
able
d
and
do
no
t re
qu
ire
pu
ll-u
p
or
pu
ll-d
ow
n r
esis
tors
.
Th
ese
pin
s ar
e d
isb
aled
a
nd
do
no
t re
qu
ire
pu
ll-u
p
or
pu
ll-d
ow
n r
esis
tors
.
No
te:
Pin
R11
C
on
nec
tio
nD
epen
ds
on
m
anag
ab
ilit
ym
od
e d
esir
ed -
C
on
sult
Des
ign
Gu
ide.
82
57
2EI
MD
I, S
ERD
ES,
FLA
SH A
ND
EEP
RO
MIN
TER
FACE
S
Insta
ll o
nly
fo
r sp
ecia
l d
ebu
g o
r te
stin
g p
urp
ose
s3
8257
2EI R
ef. D
esig
n
TO
SE
RD
ES
LA
NP
OR
T A
Ro
ute
as
dif
fere
nti
al
pair
s to
tes
t p
oin
tsp
lace
d n
ear
the
825
71E
B.
Crys
tal l
oad
cap
valu
es w
ill v
ary
with
pad
size
and
sta
ckup
adj
ust
crys
tal
disc
rete
load
ing
caps
to
prov
ide
25.0
00 M
Hz
(+/-
30
ppm
)
Mak
e lo
ad c
aps
5% C
OG
.Ca
n be
040
2, 0
603
or08
05.
Ref
ere
to d
esig
n gu
ide
for
SMBu
s pu
ll-up
val
ues.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
44
VDD/VCC Pins
VSS Pins
2 o
f 3
16
mm
x 1
6m
m B
GA
1m
m P
itch
82
57
2E
I
PC
I-E
10
/10
0/1
00
0 M
bp
sE
the
rne
t C
on
tro
lle
r
4
8257
2EI R
ef. D
esig
n
VC
C,
VD
D &
VS
S C
ON
NEC
TIO
NS
Op
tio
nal
: C
on
nec
t to
sys
tem
th
erm
alm
anag
emen
t co
ntr
oller
.
NO
TE
: P
ow
er d
eliv
ery f
or
8257
2EI.
Th
e 1
.1V
an
d 1
.8V
su
pp
lies
mu
st
be s
epara
te s
up
plies
fo
r th
e E
ther
net
Co
ntr
oller
on
ly.
Co
nsu
lt D
esig
n G
uid
e.
45
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
3 O
F 3
82
57
2E
I
PC
I -
E1
0/1
00
/1
00
0 M
bp
sE
the
rnet
Co
ntr
oll
er
16
mm
x 1
6m
m B
GA
1m
m P
itch
PCI Express RECEIVE
PCI Express TRANSMITJTAG
Pla
ce c
ap
s w
ith
in
250 m
ils o
f th
e
PC
I-E
Tra
nsm
itte
rs.
Pla
tfo
rm S
MB
us p
ull-u
p
dic
tate
s s
tuff
ing
op
tio
ns
for
this
pu
ll-u
p r
es
isto
r.
LA
N P
OW
ER
GO
OD
:S
ee D
esig
n G
uid
e.
Do
no
t co
nn
ect
an
yth
ing
to
th
is p
in.
PC
I-E
X R
eset
Gen
era
ted
by
Pla
tfo
rm
Co
nn
ect
to G
P P
ort
on
Su
per
I/O
th
at r
etai
ns
its
valu
e d
uri
ng
res
et.
Insta
ll o
nly
fo
r sp
ecia
l d
eb
ug
or
testi
ng
pu
rpo
ses
Receiv
er
inp
uts
sh
ou
ld b
eA
C c
ou
ple
d f
rom
tra
nm
itte
rso
urc
e (
no
t sh
ow
n)
per
PC
IEX
sp
ec.
82572E
I R
ef.
Desig
n
Ro
ute
as d
iffe
ren
tial
pair
s.
Tra
ce l
en
gth
s s
ho
uld
be
eq
ual w
ith
in 0
.005".
Fo
ra p
air
.
Ro
ute
as d
iffe
ren
tial
pair
s.
Tra
ce l
en
gth
s s
ho
uld
be
eq
ual w
ith
in 0
.005".
Fo
ra p
air
in
each
seg
men
t.
5
PC
I E
xp
ress T
ran
sm
itte
rd
iffe
ren
tial p
air
s f
rom
th
esyste
m b
oard
.
PC
I E
xp
ress R
eceiv
er
dif
fere
nti
al
pair
s t
o t
he s
yste
m b
oard
.
82
57
2EI
PC
I EX
PR
ESS
, JT
AG
AN
D S
MB
US
IN
TER
FAC
ES
Co
nn
ec
t to
GP
po
rt p
ins
on
Su
per
IO t
ha
t re
tain
valu
e d
uri
ng
res
et.
Ro
ute
to
ICH
wak
e in
pu
t
See D
esig
n G
uid
e
for
FL
B f
un
cti
on
ali
ty.
If t
he 8
2572E
I is
to
su
pp
ort
au
x w
ake R
50
mu
st
be in
sta
lled
.
If u
sin
g s
yste
m le
vel
JTA
G, d
o n
ot
po
pu
late
thes
e re
sist
ors
.
Th
ese p
ins a
re r
eserv
ed
.P
ull
-up
s a
re r
eq
uir
ed
as
these p
ins d
efi
ne t
est
mo
des i
n o
ther
sta
tes.
Th
ese c
an
be s
ing
le
0402 p
art
per
pin
or
a
Rp
ack. D
o n
ot
use a
sin
gle
resis
tor
for
all p
ins.
82545/82546, 82571/82572 & 631xESB/632xESB—Designing SERDES Applications
46
Byp
ass
Cap
s fo
r 1.
1V C
OR
EV
DD
Pla
ce C
lose
To
LAN
sili
con
Byp
ass
Cap
s fo
r 1.
8V V
DD
Pla
ce C
lose
To
LAN
sili
con
DEC
OUP
LING
Flas
h o
ptio
nal
SP
I E
EP
RO
M
8257
2EI R
ef. D
esig
n6
Se
ria
l FL
AS
H
FLA
SH A
ND E
EPR
OM
Opt
ion
al c
aps:
Pla
ce c
lose
to
silic
on
as p
ossi
ble
OR
pla
ce o
n se
cond
ary
side
dir
ectl
y o
n th
e B
GA
po
wer
pin
s.D
NP
un
less
nee
ded
.
Opt
iona
l cap
s:P
lace
clo
se t
o si
lico
n a
s po
ssib
leO
R p
lace
on
sec
on
dary
sid
ed
irec
tly
on th
e B
GA
po
wer
pin
s.D
NP
un
less
nee
ded
. Opt
ion
al c
aps:
Pla
ce c
lose
to
silic
on
as p
oss
ible
OR
pla
ce o
n se
cond
ary
side
dir
ectl
y o
n th
e B
GA
po
wer
pin
s.D
NP
un
less
nee
ded
.
47
Designing SERDES Applications—82545/82546, 82571/82572 & 631xESB/632xESB
LC
- O
ptic
al
Tra
nsce
iver
LC
- O
ptic
al
Tra
nsce
iver
SE
RD
ES
PO
RT
A
SE
RD
ES
PO
RT
B
Pla
ce c
lose
to
Tra
nsc
eiv
er
Pla
ce filt
er
as
close
as
poss
ible
to la
ser.
Pla
ce s
ma
llest
va
lued
cap
s cl
ose
st to la
ser
VC
C.
Pla
ce c
lose
to
Tra
nsc
eiv
er
OP
TIO
N A
: S
ERD
ES/
LAS
ER C
ON
NEC
TIO
N 7
Pla
ce f
ilte
r as
clo
se a
s po
ssib
le t
o la
ser.
Pla
ce s
malle
st v
alu
ed c
aps
close
st t
o la
ser
VC
C.
8257
1EB
Ref
. Des
ign