design of multiplexer using tolerant keeper technique · international journal of advances in...

12
International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963 467 Vol. 3, Issue 2, pp. 467-478 DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE R. Vetri Selvi 1 , and S. Prabu Venkateshwaran 2 1 PG Student, Department of ECE, SNS College of technology, India 2 Assistant Professor, Department of ECE, SNS College of technology, India ABSTRACT The dynamic gates have been the excellent choice in the design of modern processor, but limitations of dynamic gates includes low noise margin and leakage current, hence keeper techniques are used to overcome these limitations ,but that traditional keepers are susceptible to process variation, hence the tolerant keeper architecture is proposed , and if it is affected by threshold variation means noise margin also affected ,hence this keeper is replaced by an ideal keeper, that is an current source which supplies minimum required current to maintain the noise margin. This paper splits the current source into 3 parts namely, control circuitry , process variation sensor, and variation coupled keeper, here the process variation sensor and the variation coupled keeper act as a current sources, and this keeper with OR gate is used for the design of multiplexer, the delay value for the proposed multiplexer is compared with the design of multiplexer with traditional keepers and the comparison table shows that delay of multiplexer is reduced from 3.10ns to 2.91 ns and leakage current is reduced from 82nA to 63nA for a single transistor. KEYWORDS: Dynamic or gate, tolerant keeper, leakage current, multiplexer, processor, Noise margin. I. INTRODUCTION This paper explains about the design of tolerant keeper technique to reduce the leakage current of OR gate, and multiplexer is designed using this new OR gate, that is OR gate with traditional keeper, this proposed multiplexer is compared with the multiplexer using traditional OR gate, here section II describes about the literatures, that is prior works which were related to the design of keepers, section III deals about design of proposed keepers and design parameters related to the design of new keeper, section IV explains about the design of multiplexer using proposed keeper with OR gate, section V indicates the tool used for this work and outputs for literature and proposed work and section VI shows the output waveforms. 1.1. Leakage Current Mechanisms Definition of leakage current: The current, which flows through the conducting device to the ground even though the device in OFF condition. This paper explores the leakage mechanisms contributing the off-state current (not just the current from the drain terminal). Other leakage mechanisms are applicable for the small geometries themselves. As the drain voltage increases, the drain to channel depletion region widens, resulting in a significant increase in off state leakage current. Figure1. Leakage current in MOS transistor

Upload: vananh

Post on 21-Jun-2019

216 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

467 Vol. 3, Issue 2, pp. 467-478

DESIGN OF MULTIPLEXER USING TOLERANT KEEPER

TECHNIQUE

R. Vetri Selvi1, and S. Prabu Venkateshwaran

2

1 PG Student, Department of ECE, SNS College of technology, India 2Assistant Professor, Department of ECE, SNS College of technology, India

ABSTRACT

The dynamic gates have been the excellent choice in the design of modern processor, but limitations of dynamic

gates includes low noise margin and leakage current, hence keeper techniques are used to overcome these

limitations ,but that traditional keepers are susceptible to process variation, hence the tolerant keeper

architecture is proposed , and if it is affected by threshold variation means noise margin also affected ,hence

this keeper is replaced by an ideal keeper, that is an current source which supplies minimum required

current to maintain the noise margin. This paper splits the current source into 3 parts namely, control circuitry

, process variation sensor, and variation coupled keeper, here the process variation sensor and the variation

coupled keeper act as a current sources, and this keeper with OR gate is used for the design of multiplexer, the

delay value for the proposed multiplexer is compared with the design of multiplexer with traditional keepers

and the comparison table shows that delay of multiplexer is reduced from 3.10ns to 2.91 ns and leakage

current is reduced from 82nA to 63nA for a single transistor.

KEYWORDS: Dynamic or gate, tolerant keeper, leakage current, multiplexer, processor, Noise margin.

I. INTRODUCTION

This paper explains about the design of tolerant keeper technique to reduce the leakage current of OR

gate, and multiplexer is designed using this new OR gate, that is OR gate with traditional keeper, this

proposed multiplexer is compared with the multiplexer using traditional OR gate, here section II

describes about the literatures, that is prior works which were related to the design of keepers, section

III deals about design of proposed keepers and design parameters related to the design of new keeper,

section IV explains about the design of multiplexer using proposed keeper with OR gate, section V

indicates the tool used for this work and outputs for literature and proposed work and section VI

shows the output waveforms.

1.1. Leakage Current Mechanisms

Definition of leakage current: The current, which flows through the conducting device to the ground

even though the device in OFF condition. This paper explores the leakage mechanisms contributing

the off-state current (not just the current from the drain terminal). Other leakage mechanisms are

applicable for the small geometries themselves. As the drain voltage increases, the drain to channel

depletion region widens, resulting in a significant increase in off state leakage current.

Figure1. Leakage current in MOS transistor

Page 2: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

468 Vol. 3, Issue 2, pp. 467-478

We describe six short-channel leakage mechanisms as illustrated in Figure.1.I1 is the reverse-bias pn

junction leakage; I2 is the sub threshold leakage; I3 is the oxide tunnelling current; I4 is the gate

current due to hot-carrier injection; I5 is the GIDL; I6 is the channel punch through current. The

currents, I2, I5 and I6 are off-state leakage mechanisms, while the current I1 and I3 occurs in both ON

and OFF states and I4 occurs in the off state.

II. PRIOR WORKS

This part has two categories: first one decreases the leakage current through reengineering of pull

down network, second one is design of innovative keeper circuits[1],[2]. The design of innovative

keeper circuits includes the following literatures..

Figure2. (a)Fixed Keeper,(b) Conditional Keeper,(C) High Speed Domino Keeper

Figure2. (a) is a fixed keeper, where the p-MOS keeper is introduced in the dynamic OR gate to

reduce the leakage current.Figure2 (b) is a conditional keeper the keeper circuit [3] is split into two

parts so that during evaluation phase, first part is always ON and the second component turns ON

after a delay. Delay is used to decrease the amount of contentions between keeper and pull-down

network. The drawback of this approach is that the keeper is significantly weak during the transition

of pre-charge /evaluation clock signal, Figure2 (c) is a high speed domino keeper, the keeper circuit

[4] is composed of only one p-MOS transistor, which remains OFF during the early part of

evaluation phase and only turns ON if the dynamic node is supposed to remain high for rest of the

period depending on the input pattern. Here noise margin is low only at the begin of the evaluation

period.

III. PROPOSED KEEPER CIRCUIT

3.1 Keeper Sizing for Dynamic OR Gates

3.1.1 Definition of Noise Margin

There are several metrics have been proposed to improve the noise margin of the dynamic gate [5].

Here, we considering unity gain noise margin (UNG). UNG [6] is defined as the input voltage which

if applied to the input of all dynamic node results in the signal of same amplitude at the output node.

In Figure3, voltage source of VNM is applied to all MOS transistors in the pull down network, and

current source supplies enough current to the dynamic node so that voltage of the output nodes (VOUT)

is equal to VNM. In this configuration, for a given threshold voltage of transistor, amplitude of current

source Imin-Req is called minimum required current for UNG it is equal to VNM.

Page 3: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

469 Vol. 3, Issue 2, pp. 467-478

Figure3. Measurement of Minimum Required Current for Noise Margin in Vth Variation

In the presence of Vth variation, leakage current drawn out of the dynamic nodes has large deviation,

so minimum required current must be supplied by an ideal keeper to maintain UNG. For particular

noise margin (UNG), threshold voltage of transistors varied over large range and minimum required

current is measured. Minimum required current sketch is shown in Figure4, here vertical axis shows

current and horizontal axis shows threshold voltage variation.

Figure 4 Minimum Required Current (Broken Line Shows), Current of Traditional Keeper (Solid Line)

The broken line in the Figure4 displays minimum required current to sustain a constant UNG over

threshold voltage range from Vth0-3σ to Vth0+3σ.Alternatively; the solid lines represent the drive

current of traditional PMOS keepers, which shows linear behaviour with respect to threshold voltage

variation. Hashed area in Figure4 corresponds to the excess amount of current injected into the

dynamic node this can be reduced with the proper design of keeper transistor.

To meet the minimum current criteria over Vth variation range, PMOS keeper should be enlarged,

only top solid line satisfies the requirement. Minimum required current curve, which presents

behaviour of an ideal keeper, is our reference to evaluate the efficiency of other keeper circuits under

process variation. It is very difficult to design a keeper which provides exact minimum required

current over entire threshold voltage variation, so it is desirable to propose a circuitry that does not

provide many variations.

This proposed architecture has three major modules [7]: 1) Fixed keeper 2) Variation coupled keeper

3) Process variation sensor. Fixed keeper is a conventional keeper, and the output of process variation

sensor is coupled to fixed keeper using variation coupled keeper. The process variation sensor used in

this paper based on DIBL(Drain Induced Barrier Lowering)[8] effect, it observed that for short

channel devices, threshold voltage is modulated by drain voltage, assuming all other parameters to be

constant, the threshold voltage becomes linearly depends on drain voltage that is sensitive to process

variation.

Page 4: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

470 Vol. 3, Issue 2, pp. 467-478

Figure5. Proposed Keeper Architecture

Process variation insensitive circuitry is proposed in Figure5, which is the tolerant keeper, and it is

used in our keeper circuit the reference current and voltage generated by bias circuitry are only

function of the thermal voltage and width of the transistor, and hence, they are effectively independent

of channel length variations.

Figure 6 (a) Schematic Sensor block Diagram

(b) Transistor Level Diagram of Sensor

The sensor circuit in Figure6 (a), which is composed of transistor M2 and current and voltage sources,

the bias current (IBias) is generated using a current source (IREF) and a current mirror, which consist of

MI and MC. Since both these devices have identical gate-to-source voltages, the current of M2 is

equal to IBias=IREF×[(W/L)M1/(W/L)MC]. The bias voltage is implemented using transistors MV and

MB and MC .Here MV, MB ,MC form a current mirror, where with proper sizing of devices, the bias

current of MA and MB set to be IBias. It can be easily shown that if MA and MB are both biased in sub

threshold region, VBias is independent of IBias value and it is equal to [n(kT/q)×(WA/WB)],where WA

and WB are widths of MA and MB ,respectively. Operation of bias circuitry is a function of fixed

parameters [(kT/q)×(WA/WB)] and it is insensitive to fluctuations induced by noise or process

variation so leakage current is reduced.

IV. MULTIPLEXER USING PROPOSED KEEPER

A multiplexer (or MUX) is a device that selects one of several analog or digital input signals and

forwards the selected input into a single line. A multiplexer of 2n inputs has n select lines, which are

used to select which input line to send to the output. Multiplexers are mainly used to increase the

amount of data that can be sent over the network within a certain amount of time and bandwidth. A

multiplexer is also called a data selector.

Larger multiplexers are also common and, as stated above, require selector pins for inputs.

Other common sizes are 4-to-1, 8-to-1, and 16-to-1. Since digital logic uses binary values, powers of

Page 5: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

471 Vol. 3, Issue 2, pp. 467-478

2 are used (4, 8, 16) to maximally control a number of inputs for the given number of selector inputs.

Table1 is the truth table for the multiplexer and figure7 is the logic diagram for multiplexer.

Table1.Truth table for multiplexer

B A OUTPUT

0 0 INPUT1

0 1 INPUT2

1 0 INPUT3

1 1 INPUT4

Output= (INPUT1+B+C ) +(INPUT2+B+C) +(INPUT3+B+C) +(INPUT4+B+C)

The logic diagram of 4-1 multiplexer is shown here ,in this diagram the 4-input OR gate is the

proposed OR gate.

Figure7 Logic diagram of 4-to-1 multiplexer using OR gate and inverter

Figure8.structure of proposed OR gate

Page 6: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

472 Vol. 3, Issue 2, pp. 467-478

In this OR gate structure pull-up network having proposed keeper and pull down network having transistors as

required.

V. RESULT AND IMPLEMENTATION

The keepers in literatures and proposed areas are simulated using Tanner EDA Tool; tanner is a

simulation tool which generates output waveform for a given schematic circuits, this tool having three

sub software’s first one is 1)S-Edit –the circuit have been drawn in S-Edit window, using symbol

browser and wires, the symbol browser contains set of components, we can select our required

component from this symbol browser , and wires are used to give connections between components ,

second one is 2) T-Spice- this T-Spice generates spice coding for the given circuit, in that coding we

should add commend for which output we want eg . if we want input output means we have to

mention the commend as .print input output ,else if we want current means we have to insert i(

component name for which component we want power) third one is 3)W-Edit in that window output

waveform is printed based on the input commend in spice the coding. In this tool technology file

specifies the transistor width length threshold voltage and other parameters design parameters this file

also need to be included in spice coding to select the device properties ,we can select any one of the

technology file , this paper takes 1.25µm as a technology file, and VDD=5, oxide thickness

Tox=225.00E-10,threshold voltage Vto=0.622490 , Kp=6.326640E-05.here table1 shows leakage

current for literature OR gate and proposed OR gate.table2 shows the power and delay value for

proposed and literature multiplexer.

Table1 Comparison Table for Leakage Current

Keeper logic Input(v) Output(v) Leakage current

input’0’(A)

4 Input Dynamic

OR gate logic With

traditional keeper

0

1

0

1

82(nA)

Conditional keeper

0

1

0

1

83.280( nA)

High speed

domino keeper

0 0 83.1(nA)

Tolerant keeper 0

1

0

1

63(nA)

Table2 Comparison table for multiplexer

Logic Power(W) Delay(ns)

Existing multiplexer 750pW 2.91

Proposed multiplexer 5.56uW 3.10

VI. OUTPUT WAVEFORMS

6.1 Input Output Waveform for Proposed OR Gate

Page 7: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

473 Vol. 3, Issue 2, pp. 467-478

Figure9 input output waveform for proposed OR gate

This Figure9 is the input output waveform for proposed OR gate, here if input is logic 1(5V),

output also logic1,if the input is logic 0(0V),output also logic0 and X-axis denotes

time(second) division, Y-axis voltage (Voltage),here from bottom to top first waveform is

input1,second waveform is input2,thired waveform is input3,fourth waveform is output.

6.2 Input Output Waveform for Proposed Multiplexer

Figure 10 .input output waveform for proposed multiplexer

Page 8: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

474 Vol. 3, Issue 2, pp. 467-478

This Figure10 the input and output waveform for proposed multiplexer here if selection

line(input5,input6) is 00,input1 is selected if selection line is 01 input2 is selected if selection

line is 10,then input three is selected and if the selection line is 11 input4 is selected. Here 0

represents logic 0(0V) and 1 represents logic1 ( 5V),from bottom to top first waveform is

input1,second waveform is input2 third waveform is input4 forth waveform is input5 sixth

waveform is input6 and seventh waveform is output.

6.3 Leakage Current Waveform for Four Input Dynamic OR Gate With Traditional

Keeper [figure2(a)]

Figure11 Leakage current waveform for four input dynamic OR gate with tradition keeper

This figure11 is the leakage current waveform for four input dynamic OR gate this waveform

shows that the leakage current is about 82nA,that leakage current is indicated by the straight

line, y-axis represents the leakage current in nA.

6.4 Leakage Current Waveform for Conditional keeper[Figure2(b)]

Figure12 Leakage Current Waveform for Conditional keeper

This is the leakage current waveform for conditional keeper it value ranges about

83.280nA,that value is indicated by the straight line, at the beginning it starts at 83.220 and it

remains in constant at 83.280.

Page 9: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

475 Vol. 3, Issue 2, pp. 467-478

6.5 Leakage Current Waveform for High Speed Domino keeper [Figure2(c)]

Figure 13 Leakage Current Waveform for High Speed Domino keeper

Figure 13 shows leakage current waveform for high speed domino logic, its value remains

about 83.1nA.here y-axis shows the leakage current.

6.6 Leakage Current Waveform for Proposed Keeper[Figure5]

Figure 14 Leakage Current Waveform for Proposed Keeper

This Figure14 is the leakage current waveform and this waveform shows that the value is

63nA,that is leakage current is indicated by the straight line.

6.7 Power Waveform for Existing Multiplexer

Page 10: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

476 Vol. 3, Issue 2, pp. 467-478

Figure 15 Power Waveform for Proposed Keeper

Figure15 shows the power waveform of the literature multiplexer-axis shows the power in

pico watt, x-axis shows the node name for which terminal power is calculated, here at the

output node r1 is denoted as the node 750pW.

6.8 Power Waveform for Proposed Multiplexer[Figure7]

Figure16 Power waveform for proposed multiplexer

This is the power waveform for proposed multiplexer, y-axis shows the power in ultra watt,

x-axis shows the node name for which terminal power is calculated, here at the output node

time is denoted as the node 5.56uW

VII. CONCLUSION

The continues scaling of device parameters have been increases the leakage current even though it

reduces the size, therefore keepers are used to reduce the leakage current, this papers explains the

keeper for OR gates, and if this keeper with OR gate is used for the design of multiplexer, and circuit

elements which is in the registers of the register files, the leakage current of register files also reduced,

Page 11: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

477 Vol. 3, Issue 2, pp. 467-478

and it reduces leakage current of processors which increases its the performance. Here the delay for

the multiplexer is reduced from 3.10ns to 2.9ns,this delay denotes the rise time and fall time delay,

rise time delay is the delay in the output waveform to reach 90% from the 10% of its steady state

value ,and fall time delay is the delay in the output waveform to reach 10% from 90%,total delay is

the sum of rise time delay and fall time delay, leakage current is reduced from 82nA to 63nA,this is

the current that flows through the device when it is in OFF condition.table1 shows the value of

leakage current and it reduces form 82nA to 63nA.,all the figures from 9 to 16 shows the output

waveforms for input output, leakage current and power, from that leakage current waveform figure

14,that is proposed keeper shows minimum leakage current, when compared to literatures leakage

current these are shown in figure 11-figure13. Power of proposed multiplexer (figure16) is lower than

the power of existing multiplexer (figure15).

REFERENCES

[1]. Krishnamurthy.R, Alvandpour.A, Balamurugan.G, Shanbhagh.N, Soumyanath.K, and Borkar.S,2001, “A 0.13

µm 6 GHz 256 × 32 b leakagetolerant register file,” in Proc. VLSI Circuits, 2001, pp. 25–26.

[2]. Kuroda.T,Fujita.T, Mita.S, Nagamatu.T, Yoshioka.S, Sano.F, Norishima.M, Murota.M, Kako.M,

Kinugawa.M,Kakumu.M, and Sakurai.T,1996, “A 0.9 V 150 MHz 10 mW 4mm2 2-D discrete cosine transform

core processor with variable-threshold-voltage scheme,” in Proc.ISSCC, pp. 166–167

[3]. Alvandpour.A, Krishnamurthy.R,Soumyanath.K, and Borkar.S,2001, “A conditional keeper

technique for sub-0.13µm wide dynamic gates,” in Proc. VLSI Circuits, pp. 29–30.

[4]. Anis.M.H,Allam.M.W, and Elmasry.M.I, 2002,“Energy-efficient noise tolerant dynamic styles for scaled-down

CMOS and MTCMOS technologies,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst.,vol.10, no.2, pp.71–78.

[5]. D.Li and P.Mazumder,”On circuit techniques to improve noise immunity of CMOS dynamic logic,”IEEE

Trans.Very LARGE scale Integr.(VLSI) Syst., vol. 12, no.9,pp.910-925,Sep.2004

[6]. Shanbhag.N, Soumyanath.K, and Martin.S,2000 “Reliable low-power design in the presence of deep submicron

noise,” in Proc. ISLPED, pp. 295–302.

[7]. Griffin.M. M,Zerbe.J, Tsang.G, Ching.M, and Portmann.C.L,1998,“A process-independent, 800-MB/s, DRAM

byte-wide interface featuring command interleaving and concurrent memory operation,” IEEE J. Solid-State

Circuits, vol. 33, no. 11, pp. 1741–1751

[8]. Dadgour.H.F, Joshi.R.V, and Banerjee.K,2006, “A novel variation-aware low-power keeper architecture for wide

fan-in dynamic gates,” in Proc.Des. Autom. Conf., 2006, pp. 977–982.

[9]. Sudo.T, 2006,“Behavior of switching noise and electromagnetic radiation in relation to package properties and on-

chip decoupling capacitance,” in Proc. Int. Zurich Symp. Electromagn. Compat., Zurich, Switzerland, Feb./Mar.

pp. 568–573

[10]. Dadgour H.F, Lin S.C, and Banerjee.K,2007, “A statistical framework for estimation of full-chip leakage

power distribution under parameter variations,” IEEE Trans. Electron Devices, vol. 54, no. 11, pp. 2930–2945.

[11]. K.Roy and S.C. Prasad,low-power CMOS VLSI Circuit Design,New York:Wiley,2000,ch.5,pp.214-219

[12]. Kursun.V,and FriedmanE.G.,2003, “Domino logic with variable threshold voltage keeper,” IEEE Trans. Very

Large Scale Integr. (VLSI) Syst.,vol.11, no. 6, pp. 1080–1093.

[13]. Kim.C.H, Hsu.S,Krishnamurthy.R,Borkar.S, and Roy.K,2005 “Self calibrating circuit design for variation tolerant

VLSI systems,” in Proc. On-Line Testing Symp., pp. 100–105

[14]. Anis.M.H,Allam.M.W, and Elmasry.M.I, 2002,“Energy-efficient noise tolerant dynamic styles for scaled-down

CMOS and MTCMOS technologies,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst.,vol.10, no.2, pp.71–78

[15]. Hamed F Dadgour and Kaustav Banerjee, 2010,”A navel variation tolerant keeper architecture for

high performance low power wide fanin dynamic OR gates” in ie ee tr ans acti ons on vlsi systems , ,vol. 18 ,

no. 11.

Page 12: DESIGN OF MULTIPLEXER USING TOLERANT KEEPER TECHNIQUE · International Journal of Advances in Engineering & Technology, May 2012. ©IJAET ISSN: 2231-1963

International Journal of Advances in Engineering & Technology, May 2012.

©IJAET ISSN: 2231-1963

478 Vol. 3, Issue 2, pp. 467-478

Authors

R. Vetri Selvi received the BE degree in electronics& communication engineering

from Anna University, Chennai in 2010. Currently, she is a ME student at Anna

University, Coimbatore, India. Her research interests are in Digital electronics and

VLSI Design.

S. Prabu venkateshwaran received the BE. Degree in electronics and communication

engineering from the Anna University, in 2005.He received the ME. Degree in VLSI

Design from the Anna University, in 2009. Currently, he is a professor at SNS College

of Technology, Coimbatore, India. His research interest includes digital system design

and testing of VLSI Circuits.