defense systems take flight with intelligent rf integration
TRANSCRIPT
Peregrine: Solving the World’s Toughest RF Challenges
Peregrine Semiconductor Proprietary 2
Fabless semiconductor company
• Pioneered use of CMOS SOI for RF
• Performance on par with GaAs, with all the
benefits of CMOS
• Perfected technology over 25 years
Serving multiple end-markets
• Leading innovator in the mobile handset space
• Bringing RF innovation to aerospace,
automotive test & measurement and other
industrial markets
• Initial Public Offering August 2012
• Headquarters in San Diego, CA
• 300+ employees
Mobile
High Performance
Analog (HPA)
Intellectual
Property Rights
Company Overview: Driving the RF SOI Revolution
3
Global 1
Expanding Opportunities for RADAR: Even since 2012
Peregrine Semiconductor Proprietary 5
Ground Weather Radar
Military SAR Radar Space X Band
SAR – Earth Observation
Commercial Airborne Radar
Storm Tracking
Existing
NEXRAD
Proposed CASA
RADAR
Cosmo SkyMed
Pro
toty
pe
Pere
grin
e S
em
ico
nd
ucto
r Pro
prie
tary
2
Seri
al B
us
Inte
rfa
ce
CLK
DATA
EN
VDD
VSS
TX_IN
RX_OUT TX_OUT
RX_IN
768
483
391
345
179
100
1000
Ro
nC
off
20% Improvement Target
253
Production Release Year
113
Why mmwave on UltraCMOS® Technology
Cgd
Cgs
Cbd
Cbs
gbs
gdsgm
Cgd
Cgs
Cgb
gdb
rd
rs
Gate Bulk
Source
Drain
The small signal model is simplified with the
removal of the shaded elements associated
with the bulk node.
UltraCMOS®• Insulating
substrate
• CMOS Digital,
Analog, RF
• Logic functions
• High yielding
• High ESD rating
• Processed in
multiple fabs
• High Q insulating substrate
• Allows RF Integration
• High Q passives (L/C)
• Lange Couplers
• Wilkinson Combiners
• RF Hybrids
UltraCMOS® Linearity
UltraCMOS® Technology UltraCMOS® Integration
Standard
CMOS
UltraCMOS®
Results in High Linearity
Microwave blocks
Frequency (GHz)
( phase S21-phase S31 ) deg
Example of Microwave Distributed Structures
• Lange Physical Length = 1600 um
• Line width = 7 um, Line separation = 9 um
• EM Simulated over DC to 100 GHz
7
P1
P3
P4
P2
Frequency (GHz)
Magnitude Balance
dB(S21)
dB(S31)
Frequency (GHz)
Return Loss
dB(S33)
dB(S22)
dB(S11)
Integration of Microwave Elements
• Integration of high performance coupler structures
relies on a low loss substrate
• UltraCMOS loss tan is < 0.00014 @ 19 GHz
- Better than Alumina at 0.0012
• Capability can be used in other distributed circuits
• Wilkinson power dividers
• Broad band baluns
8
7um W&S
PE82670 – Introducing the first Peregrine core-chip
Peregrine Semiconductor Proprietary 9
Part #RF Freq
(GHz)
DSA
Bits
Phase
Shift bits
Insertion
loss (dB)
Isolation
(dB)Package
Export
Status
Release
Status
PE82670 9.0-10.1 6 6/10 14 50 Bare die UKAS – Feb 15
FP – Jul 15
Die on Test Board
Monolithic solution
Built on UltraCMOS ®
Silicon-on-sapphire
technology
Accurate
Reliable
Repeatable
performance, chip to
chip, lot to lot, for the
lifetime of your product
Seri
al B
us
Inte
rfa
ce
CLK
DATA
EN
VDD
VSS
TX_IN
RX_OUT TX_OUT
RX_IN
Phase and amplitude adjustment
Peregrine Semiconductor Proprietary 11
PHASE ADJUSTMENT ON LINEAR SCALE
- 10.6 GHZ (+90 DEG FOR CLARITY)
- 9.6 GHZ
- 8.6 GHZ (-90 DEG FOR CLARITY)
AMPLITUDE ADJUSTMENT (DB)
Isolation –Key Performance Parameter
Peregrine Semiconductor Proprietary 12
TX_IN TO RX_OUT ISOLATION
BLUE TRACE – SIMULATED PCB
RED TRACE – MEASURED PCB
LOWER TRACES – DE-EMBEDDED DIE
PERFORMANCE
In Summary
Peregrine Semiconductor Proprietary 13
• Peregrine discussed these concepts back in 2012
• Since 2012, we have developed fundamental MMIC design capabilities
• Successfully developed an X-Band core chip
• Implemented multiple functions on a single die
• MMIC design elements: Lange Coupler
• RF design elements: Tx/Rx switches
• Analog Design elements: Voltage regulation
• Digital elements: Control interface
• Performance that matches or exceeds that of existing solutions
• Peregrine has now shown that UltraCMOS® technology is a viable
solution for integrated high-frequency products