datasheet - stgw60h65dfb, stgwa60h65dfb, … · trench gate field-stop 650 v, 60 a high speed hb...

TO-2471

23

TO-3P1

23

TO-247 long leads

TAB

12

3

Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A• Tight parameter distribution• Safe paralleling• Positive VCE(sat) temperature coefficient• Low thermal resistance• Very fast soft recovery antiparallel diode

Applications• Photovoltaic inverters• High-frequency converters

DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

Product status link

STGW60H65DFB

STGWT60H65DFB

STGWA60H65DFB

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB

Datasheet

DS9535 - Rev 8 - July 2019For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/stgw60h65dfb

https://www.st.com/en/product/stgwt60h65dfb

https://www.st.com/en/product/stgwa60h65dfb

http://www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 650 V

ICContinuous collector current at TC = 25 °C 80 (1) A

Continuous collector current at TC = 100 °C 60 A

ICP (2)(3) Pulsed collector current 240 A

VGEGate-emitter voltage ±20 V

Transient gate-emitter voltage (tP ≤ 10 μs) ±30 V

IFContinuous forward current at TC = 25 °C 80 (1) A

Continuous forward current at TC = 100 °C 60 A

IFP (2)(3) Pulsed forward current 240 A

PTOT Total power dissipation at TC = 25 °C 375 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Current level is limited by bond wires.2. Pulse width is limited by maximum junction temperature.3. Defined by design, not subject to production test.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.4 °C/W

RthJC Thermal resistance junction-case diode 1.14 °C/W

RthJA Thermal resistance junction-ambient 50 °C/W

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBElectrical ratings

DS9535 - Rev 8 page 2/21

2 Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 650 V

VCE(sat) Collector-emitter saturation voltage

VGE = 15 V, IC = 60 A 1.60 2

VVGE = 15 V, IC = 60 A,TJ = 125 °C 1.75

VGE = 15 V, IC = 60 A,TJ = 175 °C 1.85

VF Forward on-voltage

IF = 60 A 2 2.6

VIF = 60 A, TJ = 125 °C 1.7

IF = 60 A, TJ = 175 °C 1.6

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics


Cies Input capacitanceVCE = 25 V, f = 1 MHz,VGE = 0 V

- 7792 - pF

Coes Output capacitance - 262 - pF

Cres Reverse transfer capacitance - 158 - pF

Qg Total gate charge VCC = 520 V, IC = 60 A,

VGE = 0 to 15 V(see Figure 28. Gatecharge test circuit)

- 306 - nC

Qge Gate-emitter charge - 126 - nC

Qgc Gate-collector charge - 58 - nC

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBElectrical characteristics

DS9535 - Rev 8 page 3/21

Table 5. IGBT switching characteristics (inductive load)


td(on) Turn-on delay time

VCE = 400 V, IC = 60 A,

RG = 10 Ω,VGE = 15 V (see Figure 27. Test circuit for inductive loadswitching)

- 66 - ns

tr Current rise time - 38 - ns

(di/dt)on Turn-on current slope - 1216 - A/µs

td(off) Turn-off delay time - 210 - ns

tf Current fall time - 20 - ns

Eon (1) Turn-on switching energy - 1590 - µJ

Eoff (2) Turn-off switching energy - 900 - µJ

Ets Total switching energy - 2490 - µJ

td(on) Turn-on delay time

VCE = 400 V,

IC = 60 A, RG = 10 Ω,

VGE = 15 V, TJ = 175 °C(see Figure 27. Test circuitfor inductive load switching)

- 59 - ns

tr Current rise time - 40 - ns

(di/dt)on Turn-on current slope - 1230 - A/µs

td(off) Turn-off-delay time - 242 - ns

tf Current fall time - 147 - ns

Eon (1) Turn-on switching energy - 2860 - µJ

Eoff (2) Turn-off switching energy - 1255 - µJ

Ets Total switching energy - 4115 - µJ

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)


trr Reverse recovery time

IF = 60 A, VR = 400 V,VGE = 15 V,di/dt = 100 A/µs

(see Figure 27. Test circuitfor inductive load switching)

- 60 - ns

Qrr Reverse recovery charge - 99 - nC

Irrm Reverse recovery current - 3.3 - A

dIrr/dt Peak rate of fall of reverse recoverycurrent during tb

- 187 - A/µs

Err Reverse recovery energy - 68 - µJ

trr Reverse recovery timeIF = 60 A, VR = 400 V,VGE = 15 V,

di/dt = 100 A/µs,TJ = 175 °C

(see Figure 27. Test circuitfor inductive load switching)

- 310 - ns

Qrr Reverse recovery charge - 1550 - nC

Irrm Reverse recovery current - 10 - A

dIrr/dt Peak rate of fall of reverse recoverycurrent during tb

- 59 - A/µs

Err Reverse recovery energy - 674 - µJ

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBElectrical characteristics

DS9535 - Rev 8 page 4/21

2.1 Electrical characteristics (curves)

Figure 1. Output characteristics (TJ = 25 °C)

GIPD230820131147FSR

200

160

120

80

40

00 1 2 3 4

IC (A)

VCE (V)

VGS =13,15V

VGS =11V

VGS =9V

Figure 2. Output characteristics (TJ = 175 °C)

GIPD230820131205FSR

200

160

120

80

40

00 1 2 3 4

I C (A)

V CE (V)

VGS =13, 15V

VGS =11V

VGS =9V

VGS =7V

Figure 3. Transfer characteristicsGIPD270820131335FSR

200

160

120

80

40

05 6 7 8 9 10

IC (A)

VGE (V)

VCE =6V

TJ =175°C TJ =25°C

Figure 4. Collector current vs case temperature

I C

60

40

20

00 50 TC(°C)75

(A)

25 100

80

125 150

VGE =15V, TJ =175°C

GIPD270820131347FSR

Figure 5. Power dissipation vs case temperature

P tot

300

200

100

00 50 TC(°C)75

(W)

25 100 125 150

VGE =15V, TJ =175°C

GIPD270820131401FSR

Figure 6. VCE(sat) vs junction temperature

VCE(sat)

1.8

1.6

1.4

1.2-50 Tj(°C)

(V)

100

2.0

0 50

2.2

150

2.4

2.6 VGE=15V IC=120A

IC=60A

IC=30A

GIPD021020131457FSR

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBElectrical characteristics (curves)

DS9535 - Rev 8 page 5/21

Figure 7. VCE(sat) vs collector current

V CE(sat)

1.4

1.20 20 IC(A)

(V)

40 60 80

2.2

2.0

1.8

1.6

VGE=15V

TJ=175°C

TJ=25°C

TJ=-40°C

2.4

100

GIPD270820131423FSR

Figure 8. Forward bias safe operating area

10 2

101

10 0

10 0 10 1 10 2

IC(A)

VCE(V)

V CE(s

at)lim

it

Tj≤175°CTc=25°CVGE=15Vsingle pulse

1ms

10µs

1µs

100µs

GIPG300320151744ALS

Figure 9. Diode VF vs forward current

GIPG170415EWF7WDVF

2.8

2.4

2.0

1.6

1.2

0.820 40 60 80 100

VF (V)

IF (A)

TJ =-40°C

TJ =25°C

TJ =175°C

Figure 10. Normalized V(BR)CES vs junction temperature

V(BR)CES(norm)

1.1

1.0

0.9-50 TJ(°C)0 50 100 150

IC=2mA

GIPD280820131415FSR

Figure 11. Normalized VGE(th) vs junction temperature

VGE(th)(norm)

0.8

0.7

0.6-50 TJ(°C)0 50 100 150

0.9

1.0

IC=1mA

GIPD280820131503FSR

Figure 12. Gate charge vs gate-emitter voltage

VGE(V)

4

2

00 Qg(nC)50 100 150 200

6

8

250 300 350

10

12

14

GIPD280820131507FSR

Vcc=520V, Ic=60A, IG=1mA


DS9535 - Rev 8 page 6/21

Figure 13. Switching energy vs temperature

E (µJ)

1800

1000

20025 TJ(°C)50 75 100 125

2600

VCC=400V, VGE=15VRg=10Ω, IC=60A

150

EOFF

EON

GIPD290820131623FSR

Figure 14. Switching energy vs gate resistance

E(µJ)

2100

1300

5002 RG(Ω)6 10

2900

VCC=400V, VGE=15VIC=60A, TJ=175°C

14 18

EOFF

EON

GIPD280820131527FSR

Figure 15. Switching energy vs collector current

E (µJ)

2000

1000

00 IC(A)20 40 60 80

3000

4000

5000

6000

7000VCC=400V, VGE=15VRg=10Ω, TJ=175°C

100

EOFF

EON

GIPD280820131538FSR

Figure 16. Switching energy vs collector emitter voltage

E (µJ)

2300

1300

300150 VCE(V)250 350 450

3300

TJ=175°C, VGE=15VRg=10Ω, IC=60A

EOFF

EON

4300

GIPD280820131554FSR

Figure 17. Switching times vs collector current

t(ns)

100

10

10 IC (A)20 40 60 80

TJ=175°C, VGE=15VRg=10Ω, VCC=400V

100

t f

t doff

t don

t r

GIPD280820131613FSR

Figure 18. Switching times vs gate resistance

t (ns)

100

10R g (Ω)4 8

TJ =175°C, VGE =15V IC =60A, VCC =400V

12

t f

t doff

16

t don

t r

20

GIPD280820131622FSR


DS9535 - Rev 8 page 7/21

Figure 19. Reverse recovery current vs diode currentslope

Irm(A)

70

30

00 di/dt(A/µs)500 1000 1500

Vr=400V, IF=60A

TJ=175°C

2000 2500

50

60

40

20

10

80

TJ=25°C

GIPD280820131635FSR

Figure 20. Reverse recovery time vs diode current slope

trr(ns)

150

00 di/dt(A/µs)500 1000 1500

Vr =400V, IF=60A

TJ =175°C

2000 2500

250

200

100

50TJ =25°C

300

GIPD280820131643FSR

Figure 21. Reverse recovery charge vs diode currentslope

Qrr(nC)

1500

00 di/dt(A/µs)500 1000 1500

Vr=400V, IF=60A

TJ=175°C

2000 2500

2500

2000

1000

500TJ=25°C

3000

3500

4000

GIPD280820131650FSR

Figure 22. Reverse recovery energy vs diode currentslope

Err(µJ)

300

00 di/dt(A/µs)500 1000 1500

Vr=400V, IF=60A

TJ =175°C

2000 2500

500

400

200

100TJ= 25°C

600

700

800

GIPD280820131656FSR

Figure 23. Capacitance variations

C(pF)

1000

100

100.1 VCE (V)1 10

10000 Cies

CoesCres

100

f=1MHz

GIPD280820131518FSR

Figure 24. Collector current vs switching frequency

20

40

60

80

100

1 10

Ic (A)

f (kHz)

G ΩRectangular current shape, (duty cycle=0.5, VCC = 400V, R =10VGE = 0/15V, T J =175°C)

Tc=80°C

Tc=100 ° C

GIPD080120151105FSR


DS9535 - Rev 8 page 8/21

Figure 25. Thermal impedance for IGBT

ZthTO2T_A

10 -1

10 -2

10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1 δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 26. Thermal impedance for diode


DS9535 - Rev 8 page 9/21

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 30. Diode reverse recovery waveform

t

GADG180720171418SA

10%

VRRM

dv/dt

di/dt

IRRM

IF

trr

ts tf

Qrr

IRRM

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBTest circuits

DS9535 - Rev 8 page 10/21

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBPackage information

DS9535 - Rev 8 page 11/21

https://www.st.com/ecopack

http://www.st.com

4.1 TO-247 package information

Figure 31. TO-247 package outline

0075325_9

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBTO-247 package information

DS9535 - Rev 8 page 12/21

Table 7. TO-247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

ØP 3.55 3.65

ØR 4.50 5.50

S 5.30 5.50 5.70

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBTO-247 package information

DS9535 - Rev 8 page 13/21

4.2 TO-247 long leads package information

Figure 32. TO-247 long leads package outline

8463846_2_F

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBTO-247 long leads package information

DS9535 - Rev 8 page 14/21

Table 8. TO-247 long leads package mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51

A2 1.90 2.00 2.10

b 1.16 1.26

b2 3.25

b3 2.25

c 0.59 0.66

D 20.90 21.00 21.10

E 15.70 15.80 15.90

E2 4.90 5.00 5.10

E3 2.40 2.50 2.60

e 5.34 5.44 5.54

L 19.80 19.92 20.10

L1 4.30

P 3.50 3.60 3.70

Q 5.60 6.00

S 6.05 6.15 6.25

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBTO-247 long leads package information

DS9535 - Rev 8 page 15/21

4.3 TO-3P package information

Figure 33. TO-3P package outline

8045950_3

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBTO-3P package information

DS9535 - Rev 8 page 16/21

Table 9. TO-3P package mechanical data

Dim.mm

Min. Typ. Max.

A 4.60 4.80 5.00

A1 1.45 1.50 1.65

A2 1.20 1.40 1.60

b 0.80 1.00 1.20

b1 1.80 2.00 2.20

b2 2.80 3.00 3.20

c 0.55 0.60 0.75

D 19.70 19.90 20.10

D1 13.70 13.90 14.10

E 15.40 15.60 15.80

E1 13.40 13.60 13.80

E2 9.40 9.60 9.90

e 5.15 5.45 5.75

L 19.80 20.00 20.20

L1 3.30 3.50 3.70

L2 18.20 18.40 18.60

ØP 3.30 3.40 3.50

ØP1 3.10 3.20 3.30

Q 4.80 5.00 5.20

Q1 3.60 3.80 4.00

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBTO-3P package information

DS9535 - Rev 8 page 17/21

5 Ordering information

Table 10. Order codes

Order code Marking Package Packing

STGW60H65DFB GW60H65DFB TO-247 Tube

STGWA60H65DFB G60H65DFB TO-247 long leads Tube

STGWT60H65DFB GWT60H65DFB TO-3P Tube

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBOrdering information

DS9535 - Rev 8 page 18/21

Revision history

Table 11. Document revision history

Date Revision Changes

12-Mar-2013 1 Initial release.

30-Aug-2013 2Document status promoted from preliminary to production data.

Added Section 2.1: Electrical characteristics (curves).

31-Oct-2013 3 Updated VCE(sat) in Table 4: Static characteristics.

24-Feb-2014 4 Updated title and description in cover page.

09-Jan-2015 5

Updated features in cover page, Table 2: Absolute maximum ratings,

and Table 6: IGBT switching characteristics (inductive load).

Updated Figure 5: Collector current vs. case temperature, Figure 6:

Power dissipation vs. case temperature, Figure 8: VCE(sat) vs.

collector current, Figure 18: Switching times vs collector current,

Figure 19: Switching times vs gate resistance and Figure 20:

Reverse recovery current vs. diode current slope.

Added Figure 25: Collector current vs. switching frequency.

Updated Section 4: Package information.

Minor text changes.

23-Mar-2015 6

Text edits throughout document.

In document, added new order code STGWA60H65DFB in TO-247

long leads package, with accompanying information and data.

In Section 2.1: Electrical characteristics (curves):

- updated Figure 2, Figure 3, Figure 4, Figure 7, Figure 9

17-Apr-2015 7

Text edits throughout document.

In Section 2: Electrical characteristics:

- updated Table 4: Static characteristics

- updated Table 6: IGBT switching characteristics (inductive load)

In Section 2.1: Electrical characteristics (curves):

- updated Figure 3 and Figure 9

22-Jul-2019 8Updated Table 1. Absolute maximum ratings.

Minor text changes.


DS9535 - Rev 8 page 19/21

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBContents

DS9535 - Rev 8 page 20/21

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved


DS9535 - Rev 8 page 21/21

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