datasheet - scth100n65g2-7ag - automotive-grade silicon

TAB

7

1

H2PAK-7

Drain (TAB)

Gate (1)

Driversource (2)

Powersource (3, 4, 5, 6, 7)

N-chG1DS2PS34567DTAB

FeaturesOrder code VDS RDS(on) typ. ID

SCTH100N65G2-7AG 650 V 20 mΩ 95 A

• AEC-Q101 qualified • Very fast and robust intrinsic body diode• Low capacitance

Applications• Traction inverters• DC-DC converters• OBC

DescriptionThis silicon carbide Power MOSFET device has been developed using ST’sadvanced and innovative 2nd generation SiC MOSFET technology. The devicefeatures remarkably low on-resistance per unit area and very good switchingperformance.

Product status link

SCTH100N65G2-7AG

Product summary

Order code SCTH100N65G2-7AG

Marking 100N65AG

Package H²PAK-7

Packing Tape and reel

Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

SCTH100N65G2-7AG

Datasheet

DS12773 - Rev 1 - November 2018For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/SCTH100N65G2-7AG

http://www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGSGate-source voltage -10 to 22

VGate-source voltage (recommended operational values) -5 to 18

VDS Drain-source voltage 650 V

IDDrain current (continuous) at TC = 25 °C 95

ADrain current (continuous) at TC = 100 °C 65

ID(1) Drain current (pulsed) 260 A

PTOT Total power dissipation at TC = 25 °C 360 W

Tstg Storage temperature range-55 to 175

°C

TJ Operating junction temperature range °C

1. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.42 °C/W

Rthj-amb Thermal resistance junction-ambient 50 °C/W

SCTH100N65G2-7AGElectrical ratings

DS12773 - Rev 1 page 2/15

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V

IDSS Zero gate voltage drain current

VGS = 0 V, VDS = 650 V 1 10

µAVGS = 0 V, VDS = 650 V,

TJ = 175 °C25

IGSS Gate-body leakage currentVDS = 0 V, VGS = 22 V,

TJ = 175 °C20 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 5 mA 1.9 3.1 5 V

RDS(on) Static drain-source on-resistance

VGS = 18 V, ID = 50 A 20 26

mΩVGS = 18 V, ID = 50 A,

TJ = 175 °C32

Table 4. Dynamic


Ciss Input capacitanceVDS = 520 V, f = 1 MHz,

VGS = 0 V

- 3315 - pF

Coss Output capacitance - 267 - pF

Crss Reverse transfer capacitance - 46 - pF

Qg Total gate charge

VDS = 520 V, VGS = -5 to 18 V, ID= 50 A

- 162 - nC

Qgs Gate-source charge - 45 - nC

Qgd Gate-drain charge - 49 - nC

Rg Gate input resistance f=1 MHz, ID = 0 A - 1 - Ω

Table 5. Switching energy


Eon Turn-on switching energy VDD = 520 V, ID = 50 A

RG= 10 Ω, VGS = -5 to 18 V

- 486 - µJ

Eoff Turn-off switching energy - 506 - µJ

SCTH100N65G2-7AGElectrical characteristics

DS12773 - Rev 1 page 3/15

Table 6. Reverse SiC diode characteristics


VSD Diode forward voltage IF = 30 A, VGS = 0 V - 3.5 - V

trr Reverse recovery timeISD = 50 A, di/dt = 2140 A/µs

VDD = 520 V, RG= 10 Ω, VGS= -5 V

- 26 ns

Qrr Reverse recovery charge - 370 - nC

IRRM Reverse recovery current - 24 - A

SCTH100N65G2-7AGElectrical characteristics

DS12773 - Rev 1 page 4/15

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

GADG191120181526SOA

10 2

10 1

10 0

10 -1

10 0 10 1 10 2

ID (A)

VDS (V)

tp =10 µs

tp =100 µs

tp =1 ms

tp =10 ms

Operation in this areais limited by RDS(on)

Single pulse, TC = 25 °C, TJ = 175 °C

Figure 2. Thermal impedance

GADG031020181127ZTH

10 -1

10 -2

10 -3

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.2δ = 0.1

δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 3. Output characteristics (TJ = 25 °C)

GIPG190920181009OCH_25

160

120

80

40

00 2 4 6 8

ID (A)

VDS (V)

VGS =8 V

VGS =6 V

VGS =10 V

VGS =12 V

VGS =14 V

VGS = 18 V, 20 V VGS =16 V

Figure 4. Output characteristics (TJ = 175 °C)

GADG261120180955OCH

160

120

80

40

00 2 4 6 8

ID (A)

VDS (V)

VGS = 12 V

VGS = 10 V

VGS = 8 V

VGS = 6 V

VGS = 14, 16, 18, 20 V

Figure 5. Transfer characteristics

GADG261120180955TCH

160

120

80

40

00 4 8 12 16

ID (A)

VGS (V)

VDS = 4 V TJ = 25 °C

TJ = 175 °C

Figure 6. Power dissipation

GADG261120180956PDT

360

300

240

180

120

60

0-75 -25 25 75 125 175

PTOT (W)

TC (°C)

TJ = 175 °C

SCTH100N65G2-7AGElectrical characteristics (curves)

DS12773 - Rev 1 page 5/15

Figure 7. Gate charge vs gate-source voltage

GIPG021020181232QVG

16

12

8

4

0

-4

-80 30 60 90 120 150

VGS (V)

Qg (nC)

VDD = 520 VID = 50 A

Figure 8. Capacitance variations

GIPG190920181024CVR

10 3

10 2

10 1

10 -1 10 0 10 1 10 2

C (pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 9. Switching energy vs drain current

IGBT190920181025SLC

2000

1000

00 40 80

E(μJ)

ID (A)

Etot

Eoff

Eon

Figure 10. Normalized V(BR)DSS vs temperature

GADG260920181515BDV

1.04

1.02

1.00

0.98

0.96

0.94-75 -25 25 75 125 175

V(BR)DSS (norm.)

Tj (°C)

Figure 11. Normalized gate threshold voltage

GADG260920181207VTH

1.4

1.2

1.0

0.8

0.6

0.4-75 -25 25 75 125 175

VGS(th) (norm.)

Tj (°C)

Figure 12. Switching energy vs junction temperature

SIC031020181415SLT

1000

800

600

400

200

025 75 125

E (µJ)

TJ (°C)

Etot

Eoff

Eon

VDD = 520 V, VGS = -5 to 18 V, RG = 10 Ω, ID = 50 A


DS12773 - Rev 1 page 6/15

Figure 13. Switching energy vs gate resistance

SIC041020180951SLG

1600

1200

800

400

04 8 12 16 20

E (μJ)

RG (Ω)

Etot

Eoff

Eon

VDD = 520 V, VGS = -5 to 18 V,

ID = 50 A

Figure 14. Normalized on-resistance vs temperature

GADG261120180956RON

1.8

1.6

1.4

1.2

1.0

0.8

0.6-75 -25 25 75 125 175

RDS(on) (norm.)

Tj (°C)

VGS = 18 V

Figure 15. Body diode characteristics (TJ = 25 °C)

SIC260920181209DVF

-80

-120

-160

-200-8 -6 -4 -2

ID (A)

VDS (V)

VGS = 10 V

VGS = 0 V

-40VGS = -10 V

Figure 16. Body diode characteristics (TJ = 175 °C)

SIC260920181210DVF200

-40

-80

-120

-160

-200-8 -6 -4 -2

ID (A)

VDS (V)

VGS = -10 V

VGS = 10 V

VGS = 0 V


DS12773 - Rev 1 page 7/15

3 Test circuits

Figure 17. Test circuit for resistive load switching times

AM01468v1

VD

RG

RL

D.U.T.

2200μF VDD

3.3μF+

pulse width

VGS

Figure 18. Test circuit for gate charge behavior

AM01469v1

47 kΩ1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST100 Ω

100 nF

D.U.T.

+pulse width

VGS

2200μF

VG

VDD

Figure 19. Test circuit for inductive load switching anddiode recovery times

AM01470v1

AD

D.U.T.S

B

G

25 Ω

A A

B B

RG

GD

S

100 µH

µF3.3 1000

µF VDD

D.U.T.

+

_

+

fastdiode

Figure 20. Unclamped inductive load test circuit

AM01471v1

VD

ID

D.U.T.

L

VDD+

pulse width

Vi

3.3µF

2200µF

Figure 21. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Figure 22. Switching time waveform

AM01473v1

0

VGS 90%

VDS

90%

10%

90%

10%

10%

ton

td(on) tr

0

toff

td(off) tf

SCTH100N65G2-7AGTest circuits

DS12773 - Rev 1 page 8/15

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 H²PAK-7 package information

Figure 23. H²PAK-7 package outline

DM00249216_4

SCTH100N65G2-7AGPackage information

DS12773 - Rev 1 page 9/15

https://www.st.com/ecopack

http://www.st.com

Table 7. H²PAK-7 package mechanical data

Dim.mm

Min. Max.

A 4.30 4.80

A1 0.03 0.20

C 1.17 1.37

e 2.34 2.74

e1 4.88 5.28

e2 7.42 7.82

E 0.45 0.60

F 0.50 0.70

H 10.00 10.40

H1 7.40 7.60

L 14.75 15.25

L1 1.27 1.40

L2 4.35 4.95

L3 6.85 7.25

M 1.90 2.50

R 0.20 0.60

V 0° 8°

Figure 24. H²PAK-7 recommended footprint

footprint_DM00249216_4

Note: Dimensions are in mm.

SCTH100N65G2-7AGH²PAK-7 package information

DS12773 - Rev 1 page 10/15

4.2 Packing information

Figure 25. Tape outline

P1A0 D1

P0

FW

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

Top covertape

AM08852v2

SCTH100N65G2-7AGPacking information

DS12773 - Rev 1 page 11/15

Figure 26. Reel outline

A

D

B

Full radius

Tape slotIn core for

Tape start

G measured

At hub

C

N

REEL DIMENSIONS

40 mm min.

Access hole

At slot location

T

Table 8. Tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

SCTH100N65G2-7AGPacking information

DS12773 - Rev 1 page 12/15

Revision history

Table 9. Document revision history

Date Version Changes

27-Nov-2018 1 First release.

SCTH100N65G2-7AG

DS12773 - Rev 1 page 13/15

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

4.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

SCTH100N65G2-7AGContents

DS12773 - Rev 1 page 14/15

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2018 STMicroelectronics – All rights reserved

SCTH100N65G2-7AG

DS12773 - Rev 1 page 15/15

datasheet - scth100n65g2-7ag - automotive-grade silicon

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