datasheet - irf630 - n-channel 200 v, 0.29 Ω typ., 9 a ... · 1 2 3 to-220 tab am01475v1_nozen...
TRANSCRIPT
1 23
TO-220
TAB
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
FeaturesOrder code VDS RDS(on) max. ID
IRF630 200 V 0.40 Ω 9 A
• Extremely high dv/dt capability• Very low intrinsic capacitance• Gate charge minimized
Applications• Switching applications
DescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET™process has specifically been designed to minimize input capacitance and gatecharge. It is therefore suitable as primary switch in advanced high-efficiency isolatedDC-DC converters.
Product status link
IRF630
Product summary
Order code IRF630
Marking IRF630
Package TO-220
Packing Tube
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package
IRF630
Datasheet
DS0668 - Rev 10 - December 2018For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDDS Drain-source voltage (VGS = 0 V) 200 V
VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V
VGS Gate-source voltage ±20 V
IDDrain current (continuous) at TC = 25 °C 9 A
Drain current (continuous) at TC = 100 °C 6.5 A
IDM(1) Drain current (pulsed) 36 A
PTOT Total power dissipation at TC = 25 °C 120 W
EAS(2) Single pulse avalanche energy 110 mJ
dv/dt(3) Drain-body diode dynamic dv/dt ruggedness 5.8 V/ns
Tstg Storage temperature range-65 to 175 °C
TJ Operating junction temperature range
1. Pulse width is limited by safe operating area.2. Starting TJ = 25 °C, ID = 4.5 A
3. ISD = 9 A, di/dt = 520 A/μs, VDD = 50 V, TJ < TJmax
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 1.26 °C/W
Rthj-amb Thermal resistance junction-ambient 62.5 °C/W
IRF630Electrical ratings
DS0668 - Rev 10 page 2/13
2 Electrical characteristics
TCASE = 25 °C unless otherwise specified
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA 200 V
IDSS Zero gate voltage drain current
VGS = 0 V, VDS = 200 V 1 µA
VGS = 0 V, VDS = 200 V,
TC = 125 °C(1)100 µA
IGSS Gate body leakage current VDS = 0 V, VGS = 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4.5 A 0.29 0.40 Ω
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitanceVDS = 25 V, f = 1 MHz,
VGS = 0 V
- 370 - pF
Coss Output capacitance - 77 - pF
Crss Reverse transfer capacitance - 14 - pF
Qg Total gate charge VDD = 160 V, ID = 9 A
VGS = 0 to 10 V
(see Figure 13. Test circuit for gatecharge behavior)
- 11.6 - nC
Qgs Gate-source charge - 2.2 - nC
Qgd Gate-drain charge - 5.5 - nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 100 V, ID = 4.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 12. Test circuit forresistive load switching times andFigure 17. Switching timewaveform)
- 5.6 - ns
tr Rise time - 2.6 - ns
IRF630Electrical characteristics
DS0668 - Rev 10 page 3/13
Table 6. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VSD(1) Forward on voltage ISD = 9 A, VGS = 0 V - 1.5 V
trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs,
VDD = 50 V
(see Figure 17. Switching timewaveform)
- 118.5 ns
Qrr Reverse recovery charge - 393 nC
IRRM Reverse recovery current - 6.6 A
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
IRF630Electrical characteristics
DS0668 - Rev 10 page 4/13
2.1 Electrical characteristics (curves)
Figure 1. Safe operating areaGADG221120181106SOA
101
100
10-1
10-2
10-1 100 101 102
ID (A)
VDS (V)
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
Operation in this areais limited by RDS(on)
TC = 25 °C,TJ ≤ 175 °C,single pulse
Figure 2. Thermal impedance
GADG221120181106ZTH
10 -1
10 -2
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
K
tp (s)
δ = 0.5
δ = 0.1
δ = 0.05
δ = 0.02δ = 0.01
Single pulse
δ = 0.2
Figure 3. Output characteristics
GADG221120181107OCH
20
16
12
8
4
00 5 10 15 20
ID (A)
VDS (V)
VGS = 8, 9, 10 V
VGS = 7 V
VGS = 6 V
VGS = 5 V
VGS = 4 V
Figure 4. Transfer characteristics
GADG221120181221TCH
7
6
5
4
3
2
1
00 1 2 3 4 5
ID (A)
VGS (V)
VDS = 10 V
TJ = 25 °C
TJ = 150 °CTJ = -55 °C
Figure 5. Gate charge vs gate-source voltage
GADG221120181107QVG
12
10
8
6
4
2
00 2 4 6 8 10 12
VGS (V)
Qg (nC)
VDS = 160 V, ID = 9 A
Figure 6. Static drain-source on-resistance
GADG221120181108RID
325
300
275
2500 1 2 3 4 5 6 7 8 9
RDS(on) (mΩ)
ID (A)
VGS = 10 V
IRF630Electrical characteristics (curves)
DS0668 - Rev 10 page 5/13
Figure 7. Capacitance variations
GADG221120181107CVR
10 3
10 2
10 1
10 0 0 50 100 150
C (pF)
VDS (V)
CISS
COSS
CRSS
Figure 8. Normalized gate threshold voltage vstemperature
GADG221120181109VTH
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4-75 -25 25 75 125 175
VGS(th) (norm.)
Tj (°C)
ID = 250 µA
Figure 9. Normalized on-resistance vs temperature
GADG221120181109RON
2.6
2.2
1.8
1.4
1.0
0.6
0.2-75 -25 25 75 125 175
RDS(on) (norm.)
Tj (°C)
VGS = 10 V, ID = 4.5 A
Figure 10. Normalized V(BR)DSS vs temperature
GADG221120181109BDV
1.121.101.081.061.041.021.000.980.960.940.920.900.88
-75 -25 25 75 125 175
V(BR)DSS (norm.)
Tj (°C)
ID = 1 mA
Figure 11. Source-drain diode forward characteristics
GADG221120181110SDF
0.9
0.8
0.7
0.6
0.5
0.40 2 4 6 8
VSD (V)
ISD (A)
TJ = 175 °C
TJ = 25 °C
TJ = -55 °C
IRF630Electrical characteristics (curves)
DS0668 - Rev 10 page 6/13
3 Test circuits
Figure 12. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200μF VDD
3.3μF+
pulse width
VGS
Figure 13. Test circuit for gate charge behavior
AM01469v1
47 kΩ1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST100 Ω
100 nF
D.U.T.
+pulse width
VGS
2200μF
VG
VDD
Figure 14. Test circuit for inductive load switching anddiode recovery times
AM01470v1
AD
D.U.T.S
B
G
25 Ω
A A
B B
RG
GD
S
100 µH
µF3.3 1000
µF VDD
D.U.T.
+
_
+
fastdiode
Figure 15. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3µF
2200µF
Figure 16. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 17. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
IRF630Test circuits
DS0668 - Rev 10 page 7/13
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
IRF630Package information
DS0668 - Rev 10 page 8/13
4.1 TO-220 type A package information
Figure 18. TO-220 type A package outline
0015988_typeA_Rev_22
IRF630TO-220 type A package information
DS0668 - Rev 10 page 9/13
Table 7. TO-220 type A package mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
IRF630TO-220 type A package information
DS0668 - Rev 10 page 10/13
Revision history
Table 8. Document revision history
Date Version Changes
09-Sep-2004 8 Complete version
03-Aug-2006 9 New template, no content change
12-Dec-2018 10Part number IRF630FP has been moved to a separate datasheet and thedocument has been updated accordingly.
Minor text changes
IRF630
DS0668 - Rev 10 page 11/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
IRF630Contents
DS0668 - Rev 10 page 12/13
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IRF630
DS0668 - Rev 10 page 13/13