datasheet ipu80r900p7 - farnell · 2017-07-06 · final data sheet rev. 2.0, 2017-03-21 1 maximum...

1

IPU80R900P7

Rev.2.0,2017-03-21Final Data Sheet

1 2

tab

3

IPAK

DrainPin 2, Tab

GatePin 1

SourcePin 3

MOSFET800VCoolMOSªP7PowerTransistorThelatest800VCoolMOS™P7seriessetsanewbenchmarkin800Vsuperjunctiontechnologiesandcombinesbest-in-classperformancewithstateoftheartease-of-use,resultingfromInfineon’sover18yearspioneeringsuperjunctiontechnologyinnovation.

Features•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss•Best-in-classDPAKRDS(on)•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V•IntegratedZenerDiodeESDprotection•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)•Fullyoptimizedportfolio

Benefits•Best-in-classperformance•Enablinghigherpowerdensitydesigns,BOMsavingsandlowerassemblycosts•Easytodriveandtoparallel•BetterproductionyieldbyreducingESDrelatedfailures•Lessproductionissuesandreducedfieldreturns•Easytoselectrightpartsforfinetuningofdesigns

ApplicationsRecommendedforhardandsoftswitchingflybacktopologiesforLEDLighting,lowpowerChargersandAdapters,Audio,AUXpowerandIndustrialpower.AlsosuitableforPFCstageinConsumerapplicationsandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 800 V

RDS(on),max 0.90 Ω

Qg,typ 15 nC

ID 6 A

Eoss @ 500V 1.4 µJ

VGS(th),typ 3 V

ESD class (HBM) 2 -

Type/OrderingCode Package Marking RelatedLinksIPU80R900P7 PG-TO 251-3 80R900P7 see Appendix A

2

800VCoolMOSªP7PowerTransistorIPU80R900P7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

63.9 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 14 A TC=25°C

Avalanche energy, single pulse EAS - - 13 mJ ID=0.9A; VDD=50V

Avalanche energy, repetitive EAR - - 0.11 mJ ID=0.9A; VDD=50V

Avalanche current, repetitive IAR - - 0.9 A -

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V

Gate source voltage VGS-20-30

--

2030 V static;

AC (f>1 Hz)

Power dissipation Ptot - - 45 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 150 °C -

Continuous diode forward current IS - - 4.4 A TC=25°C

Diode pulse current2) IS,pulse - - 14 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=1.1A,Tj=25°C

Maximum diode commutation speed3) dif/dt - - 50 A/µs VDS=0to400V,ISD<=1.1A,Tj=25°C

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 2.8 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s

1) Limited by Tj max. Maximum duty cycle D=0.52) Pulse width tp limited by Tj,max3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs

4



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.11mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=800V,VGS=0V,Tj=25°C

VDS=800V,VGS=0V,Tj=150°C

Gate-source leakage curent incl. zenerdiode IGSS - - 1 µA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.771.99

0.90- Ω VGS=10V,ID=2.2A,Tj=25°C

VGS=10V,ID=2.2A,Tj=150°C

Gate resistance RG - 1.4 - Ω f=250kHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 350 - pF VGS=0V,VDS=500V,f=250kHz

Output capacitance Coss - 6 - pF VGS=0V,VDS=500V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 11 - pF VGS=0V,VDS=0to500V

Effective output capacitance, timerelated2) Co(tr) - 135 - pF ID=constant,VGS=0V,VDS=0to500V

Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=2.2A,RG=15Ω

Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=2.2A,RG=15Ω

Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=2.2A,RG=15Ω

Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=2.2A,RG=15Ω

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 2 - nC VDD=640V,ID=2.2A,VGS=0to10V

Gate to drain charge Qgd - 6 - nC VDD=640V,ID=2.2A,VGS=0to10V

Gate charge total Qg - 15 - nC VDD=640V,ID=2.2A,VGS=0to10V

Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=2.2A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V

5



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.2A,Tf=25°C

Reverse recovery time trr - 610 - ns VR=400V,IF=1.1A,diF/dt=50A/µs

Reverse recovery charge Qrr - 5 - µC VR=400V,IF=1.1A,diF/dt=50A/µs

Peak reverse recovery current Irrm - 11 - A VR=400V,IF=1.1A,diF/dt=50A/µs

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

35

40

45

50

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs10 µs100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-1

100

101

0.5

0.2

0.1

0.050.02

0.01single pulse

ZthJC=f(tP);parameter:D=tp/T

7



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

10

12

14

16

1820 V 10 V

8 V7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

10

1220 V10 V

8 V7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 5 10 151.0

1.5

2.0

2.5

3.0

3.5

4.05 V 5.5 V

6 V

6.5 V

7 V

10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

98%

typ

RDS(on)=f(Tj);ID=2.2A;VGS=10V

8



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

2

4

6

8

10

12

14

16

25 °C

150 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 150

1

2

3

4

5

6

7

8

9

10

120 V 640 V

VGS=f(Qgate);ID=2.2Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0 2.510-1

100

101

102

25 °C125 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

2

4

6

8

10

12

14

EAS=f(Tj);ID=0.9A;VDD=50V

9



Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175700

750

800

850

900

950

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 600 700 8000.0

0.5

1.0

1.5

2.0

2.5

3.0

Eoss=f(VDS)

10



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

11



6PackageOutlines

33N

L2

L 8.89

0.89 0.035

0.3509.65

1.37 0.054

0.380

4.57

2.29

MILLIMETERS

A1

b4

b2

b

A

DIM

D1

E

E1

c2

D

e1

e

c

0.90

2.16

0.64

0.65

4.95

MIN

0.46

5.97

5.04

6.35

4.70

0.46

0.035

0.025

0.085

0.185

0.250

0.198

0.235

0.018

0.018

0.195

0.026

m

1.14

0.89

2.41

1.15

5.50

MAX

0.89

6.22

5.77

6.73

5.21

0.60

j

INCHES

0.180

0.090

MIN

0.045

0.035

MAX

0.095

0.205

0.265

0.227

0.245

0.035

0.024

0.217

0.045

m

2.0

EUROPEAN PROJECTION

ISSUE DATE

SCALE

0

4mm

0

2.0

REVISION

01-04-2016

04

DOCUMENT NO.

Z8B0003330

1.90 0.0752.29 0.090L1

c

Figure1OutlinePG-TO251-3,dimensionsinmm/inches

12



7AppendixA

Table11RelatedLinks

• IFXCoolMOSWebpage:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/p7

13



RevisionHistoryIPU80R900P7

Revision:2017-03-21,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-03-21 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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datasheet ipu80r900p7 - farnell · 2017-07-06 · final data sheet rev. 2.0, 2017-03-21 1 maximum...

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