datasheet ff600r12me7 b11

EconoDUAL™3 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC

Features• Electrical features

- VCES = 1200 V- IC nom = 600 A / ICRM = 1200 A- Integrated temperature sensor- TRENCHSTOPTM IGBT7- VCEsat with positive temperature coefficient

• Mechanical features- High power density- Isolated base plate- PressFIT contact technology- Standard housing

Potential applications• Commercial Agriculture Vehicles• High power converters• Motor drives• Servo drives• UPS systemsProduct validation• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068Description

FF600R12ME7_B11EconoDUAL™3 module

Datasheet Please read the Important Notice and Warnings at the end of this document 1.00www.infineon.com 2021-05-21

https://www.infineon.com

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15


Table of contents

Datasheet 2 1.002021-05-21

1 Package

Table 1 Insulation coordination

Parameter Symbol Note or test condition Values Unit

Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 3.4 kV

Material of modulebaseplate

Cu

Internal Isolation basic insulation (class 1, IEC 61140) Al2O3

Creepage distance dCreep terminal to heatsink 14.5 mm

Creepage distance dCreep terminal to terminal 13.0 mm

Clearance dClear terminal to heatsink 12.5 mm

Clearance dClear terminal to terminal 10.0 mm

Comparative tracking index CTI > 200

RTI Elec. RTI housing 140 °C

Table 2 Characteristic values


Min. Typ. Max.

Stray inductance module LsCE 20 nH

Module lead resistance,terminals - chip

RCC'+EE' TC=25°C, per switch 0.8 mΩ

Storage temperature Tstg -40 125 °C

Mounting torque for modulmounting

M - Mounting according tovalid application note

M5, Screw 3 6 Nm

Terminal connection torque M - Mounting according tovalid application note

M6, Screw 3 6 Nm

Weight G 345 g

2 IGBT, Inverter

Table 3 Maximum rated values


Collector-emitter voltage VCES Tvj = 25 °C 1200 V

Continous DC collectorcurrent

ICDC Tvj max = 175 °C TC = 85 °C 600 A

Repetitive peak collectorcurrent

ICRM tP = 1 ms 1200 A

Gate-emitter peak voltage VGES ±20 V


1 Package

Datasheet 3 1.002021-05-21



Min. Typ. Max.

Collector-emitter saturationvoltage

VCE sat IC = 600 A, VGE = 15 V Tvj = 25 °C 1.50 1.75 V

Tvj = 125 °C 1.65

Tvj = 175 °C 1.75

Gate threshold voltage VGEth IC = 12 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V

Gate charge QG VGE = ±15 V, VCE = 600 V 9.6 µC

Internal gate resistor RGint Tvj = 25 °C 0.56 Ω

Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 92 nF

Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.46 nF

Collector-emitter cut-offcurrent

ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 35 µA

Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA

Turn-on delay time(inductive load)

tdon IC = 600 A, VCE = 600 V,VGE = ±15 V, RGon = 0.51 Ω

Tvj = 25 °C 0.250 µs

Tvj = 125 °C 0.270

Tvj = 175 °C 0.290

Rise time (inductive load) tr IC = 600 A, VCE = 600 V,VGE = ±15 V, RGon = 0.51 Ω

Tvj = 25 °C 0.065 µs

Tvj = 125 °C 0.072

Tvj = 175 °C 0.074

Turn-off delay time(inductive load)

tdoff IC = 600 A, VCE = 600 V,VGE = ±15 V,RGoff = 0.51 Ω

Tvj = 25 °C 0.420 µs

Tvj = 125 °C 0.500

Tvj = 175 °C 0.540

Fall time (inductive load) tf IC = 600 A, VCE = 600 V,VGE = ±15 V,RGoff = 0.51 Ω

Tvj = 25 °C 0.125 µs

Tvj = 125 °C 0.270

Tvj = 175 °C 0.370

Turn-on energy loss perpulse

Eon IC = 600 A, VCE = 600 V,Lσ = 25 nH, VGE = ±15 V,RGon = 0.51 Ω, di/dt =7800 A/µs (Tvj = 175 °C)

Tvj = 25 °C 24 mJ

Tvj = 125 °C 43

Tvj = 175 °C 58

Turn-off energy loss perpulse

Eoff IC = 600 A, VCE = 600 V,Lσ = 25 nH, VGE = ±15 V,RGoff = 0.51 Ω, dv/dt =3100 V/µs (Tvj = 175 °C)

Tvj = 25 °C 50.5 mJ

Tvj = 125 °C 77

Tvj = 175 °C 95.5

SC data ISC VGE ≤ 15 V, VCC = 800 V,VCEmax=VCES-LsCE*di/dt

tP ≤ 8 µs, Tvj ≤ 150 °C

2500 A

tP ≤ 6 µs, Tvj ≤ 175 °C

2400


2 IGBT, Inverter

Datasheet 4 1.002021-05-21

Table 4 Characteristic values (continued)


Min. Typ. Max.

Thermal resistance, junctionto case

RthJC per IGBT 0.0721 K/W

Thermal resistance, case toheatsink

RthCH per IGBT, λgrease= 1 W/(m*K) 0.0193 K/W

Temperature underswitching conditions

Tvj op -40 175 °C

Note: Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14.

3 Diode, Inverter

Table 5 Maximum rated values


Repetitive peak reversevoltage

VRRM Tvj = 25 °C 1200 V

Continous DC forwardcurrent

IF 600 A

Repetitive peak forwardcurrent

IFRM tP = 1 ms 1200 A

I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 28300 A²s

Tvj = 175 °C 26000



Min. Typ. Max.

Forward voltage VF IF = 600 A, VGE = 0 V Tvj = 25 °C 1.80 2.10 V

Tvj = 125 °C 1.70

Tvj = 175 °C 1.60

Peak reverse recoverycurrent

IRM VR = 600 V, IF = 600 A,VGE = -15 V, -diF/dt =7800 A/µs (Tvj = 175 °C)

Tvj = 25 °C 400 A

Tvj = 125 °C 550

Tvj = 175 °C 625

Recovered charge Qr VR = 600 V, IF = 600 A,VGE = -15 V, -diF/dt =7800 A/µs (Tvj = 175 °C)

Tvj = 25 °C 38 µC

Tvj = 125 °C 79.5

Tvj = 175 °C 108


3 Diode, Inverter

Datasheet 5 1.002021-05-21

Table 6 Characteristic values (continued)


Min. Typ. Max.

Reverse recovery energy Erec VR = 600 V, IF = 600 A,VGE = -15 V, -diF/dt =7800 A/µs (Tvj = 175 °C)

Tvj = 25 °C 19 mJ

Tvj = 125 °C 39

Tvj = 175 °C 53

Thermal resistance, junctionto case

RthJC per diode 0.141 K/W

Thermal resistance, case toheatsink

RthCH per diode, λgrease= 1 W/(m*K) 0.0230 K/W

Temperature underswitching conditions

Tvj op -40 175 °C

Note: Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14.

4 NTC-Thermistor



Min. Typ. Max.

Rated resistance R25 TNTC = 25 °C 5 kΩ

Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 %

Power dissipation P25 TNTC = 25 °C 20 mW

B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K



Note: Specification according to the valid application note.


4 NTC-Thermistor

Datasheet 6 1.002021-05-21

5 Characteristics diagrams

output characteristic (typical), IGBT, InverterIC = f(VCE)VGE = 15 V

output characteristic (typical), IGBT, InverterIC = f(VCE)Tvj = 175 °C

0.0 0.5 1.0 1.5 2.0 2.5 3.00

100

200

300

400

500

600

700

800

900

1000

1100

1200

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

100

200

300

400

500

600

700

800

900

1000

1100

1200

transfer characteristic (typical), IGBT, InverterIC = f(VGE)VCE = 20 V

switching losses (typical), IGBT, InverterE = f(IC)RGoff = 0.51 Ω, RGon = 0.51 Ω, VCE = 600 V, VGE = ± 15 V

5 6 7 8 9 10 11 12 130

100

200

300

400

500

600

700

800

900

1000

1100

1200

0 200 400 600 800 1000 12000

50

100

150

200

250

300

350



Datasheet 7 1.002021-05-21

switching losses (typical), IGBT, InverterE = f(RG)IC = 600 A, VCE = 600 V, VGE = ± 15 V

transient thermal impedance , IGBT, InverterZth = f(t)

0 1 2 3 4 5 60

25

50

75

100

125

150

175

200

225

250

0.001 0.01 0.1 1 100.001

0.01

0.1

1

reverse bias safe operating area (RBSOA), IGBT,InverterIC = f(VCE)RGoff = 0.51 Ω, VGE = ±15 V, Tvj = 175 °C

Switching times (typical), IGBT, Invertert = f(IC)RGoff = 0.51 Ω, RGon = 0.51 Ω, VCE = 600 V, VGE = ± 15 V, Tvj =175 °C

0 200 400 600 800 1000 1200 14000

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

0 200 400 600 800 1000 12000.01

0.1

1

10



Datasheet 8 1.002021-05-21

Switching times (typical), IGBT, Invertert = f(RG)IC = 600 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C

capacity characteristic (typical), IGBT, InverterC = f(VCE)f = 100 kHz, VGE = 0 V, Tvj = 25 °C

0 1 2 3 4 5 60.01

0.1

1

10

0 10 20 30 40 50 60 70 80 90 1000.01

0.1

1

10

100

1000

gate charge characteristic (typical), IGBT, InverterVGE = f(QG)IC = 600 A, Tvj = 25 °C

forward characteristic of (typical), Diode, InverterIF = f(VF)

0 1 2 3 4 5 6 7 8 9 10-15

-12

-9

-6

-3

0

3

6

9

12

15

0.0 0.5 1.0 1.5 2.0 2.50

100

200

300

400

500

600

700

800

900

1000

1100

1200



Datasheet 9 1.002021-05-21

switching losses (typical), Diode, InverterErec = f(IF)VCE = 600 V, RGon = RGon(IGBT)

switching losses (typical), Diode, InverterErec = f(RG)VCE = 600 V, IF = 600 A

0 200 400 600 800 1000 12000

10

20

30

40

50

60

70

80

0 1 2 3 4 5 60

10

20

30

40

50

60

70

80

transient thermal impedance , Diode, InverterZth = f(t)

temperature characteristic (typical), NTC-ThermistorR = f(TNTC)

0.001 0.01 0.1 1 100.001

0.01

0.1

1

0 25 50 75 100 125 150 17510

100

1000

10000

100000



Datasheet 10 1.002021-05-21

6 Circuit diagram

Figure 2


6 Circuit diagram

Datasheet 11 1.002021-05-21

7 Package outlines

In f in e o n

Figure 3


7 Package outlines

Datasheet 12 1.002021-05-21

8 Module label code

2

Module label code

Code format Data Matrix Barcode Code128

Encoding ASCII text Code Set A

Symbol size 16x16 23 digits

Standard IEC24720 and IEC16022 IEC8859-1

Code content ContentModule serial numberModule material numberProduction order numberDate code (production year)Date code (production week)

Digit1 – 56 - 1112 - 1920 – 2122 – 23

Example71549142846550549911530

Example

7154914284655054991153071549142846550549911530

Figure 4


8 Module label code

Datasheet 13 1.002021-05-21

Revision historyDocument revision Date of release Description of changes

V1.0 2019-10-08 Target datasheet

0.10 2020-11-24 Target datasheet

0.11 2021-04-08 Preliminary datasheet

0.12 2021-04-15 Preliminary datasheet

1.00 2021-05-21 Final datasheet


Revision history

Datasheet 14 1.002021-05-21

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-05-21Published byInfineon Technologies AG81726 Munich, Germany © 2021 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-AAY183-003

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”).With respect to any examples, hints or any typicalvalues stated herein and/or any information regardingthe application of the product, Infineon Technologieshereby disclaims any and all warranties and liabilitiesof any kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

Please note that this product is not qualifiedaccording to the AEC Q100 or AEC Q101 documentsof the Automotive Electronics Council.

WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury.

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datasheet ff600r12me7 b11

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