datasheet - a1c15s12m3 - acepack™ 1 converter inverter ... · 1.1.2 diode limiting values at tj =...

ACEPACK™ 1

Features• ACEPACK™ 1 power module

– DBC Cu Al2O3 Cu• Converter inverter brake topology

– 1600 V, very low drop rectifiers for converter– 1200 V, 15 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC

Applications• Inverters• Motor drives

DescriptionThis power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 1package with NTC, integrating the advanced trench gate field-stop technology fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.

Product status

A1C15S12M3

Product summary

Order code A1C15S12M3

Marking A1C15S12M3

Package ACEPACK™ 1

Leads type Solder contact pins

ACEPACK™ 1 converter inverter brake, 1200 V, 15 A, trench gate field‑stop M series IGBT with soft diode and NTC

A1C15S12M3

Datasheet

DS11631 - Rev 7 - October 2018For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/A1C15S12M3

1 Electrical ratings

1.1 Inverter stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.1.1 IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

Symbol Description Value Unit

VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current at TC = 100 °C 15 A

ICP (1) Pulsed collector current (tp = 1 ms) 30 A

VGE Gate-emitter voltage ± 20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 142.8 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES Collector-emitter breakdown voltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)(terminal) Collector-emitter saturation voltage

VGE = 15 V, IC= 15 A 1.95 2.45 V

VGE = 15 V, IC = 15 A, TJ = 150 ˚C 2.3 V

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 μA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

985 pF

Coes Output capacitance 118 pF

Cres Reverse transfer capacitance 40 pF

Qg Total gate charge VCC = 960 V, IC = 15 A, VGE = ±15 V 71 nC

td(on) Turn-on delay timeVCC = 600 V, IC = 15 A, RG = 22 Ω,

VGE = ±15 V,di/dt = 820 A/µs

120 ns

tr Current rise time 14.5 ns

Eon (1) Turn-on switching energy 0.59 mJ

td(off) Turn-off delay timeVCC = 600 V, IC = 15 A, RG = 22 Ω,

VGE = ±15 V,dv/dt = 8200 V/µs

115 ns

tf Current fall time 84 ns

Eoff (2) Turn-off switching energy 0.83 mJ

A1C15S12M3 Electrical ratings

DS11631 - Rev 7 page 2/19



VGE = ±15 V, di/dt = 690 A/µs, TJ = 150 °C

122 ns

tr Current rise time 17 ns

Eon (1) Turn-on switching energy 1.08 mJ


VGE = ±15 V,dv/dt = 7000 V/µs, TJ = 150 °C

122 ns


Eoff (2) Turn-off switching energy 1.06 mJ

tSC Short-circuit withstand time VCC ≤ 600V, VGE ≤ 15 V, TJstart ≤ 150 °C 10 µs

RTHj-c Thermal resistance junction-to-case Each IGBT 0.95 1.05 °C/W

RTHc-h Thermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.90 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

A1C15S12M3Inverter stage

DS11631 - Rev 7 page 3/19

1.1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode, inverter stage

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

IF Continuous forward current at (TC = 100 °C) 15 A

IFP(1) Pulsed forward current (tp = 1 ms) 30 A




Table 4. Electrical characteristics of the diode, inverter stage


VF(terminal) Forward voltage

IF = 15 A - 3.0 3.8V

IF = 15 A, TJ = 150 ˚C - 2.1

trr Reverse recovery time

IF = 15 A, VR = 600 V, VGE = ±15 V,

diF/dt = 820 A/μs

- 190 ns

Qrr Reverse recovery charge - 1.45 µC

Irrm Reverse recovery current - 23 A

Erec Reverse recovery energy - 0.55 mJ


IF = 15 A, VR = 600 V, VGE = ±15 V,

diF/dt = 690 A/μs, TJ = 150 °C

- 400 ns




RTHj-c Thermal resistance junction-to-case Each diode - 1.60 1.75 °C/W

RTHc-h Thermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 1.15 °C/W

A1C15S12M3Inverter stage

DS11631 - Rev 7 page 4/19

1.2 Brake stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.2.1 IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage


VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current (TC = 100 °C) 15 A

ICP(1) Pulsed collector current (tp = 1 ms) 30 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 142.8 W




Table 6. Electrical characteristics of the IGBT, brake stage


V(BR)CES Collector-emitter breakdown voltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)(terminal) Collector-emitter saturation voltage

VGE = 15 V, IC = 15 A 1.95 2.45V

VGE = 15 V, IC = 15 A, TJ = 150 ˚C 2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

985 pF

Coes Output capacitance 118 pF

Cres Reverse transfer capacitance 40 pF

Qg Total gate charge VCC = 960 V, IC = 15 A, VGE = ±15 V 71 nC


VGE = ±15 V,di/dt = 820 A/µs

120 ns

tr Current rise time 14.5 ns

Eon(1) Turn-on switching energy 0.59 mJ


VGE = ±15 V,dv/dt = 8200 V/µs

115 ns


Eoff(2) Turn-off switching energy 0.83 mJ


VGE = ±15 V, di/dt = 690 A/µs, TJ = 150 °C

122 ns

tr Current rise time 17 ns

Eon Turn-on switching energy 1.08 mJ

A1C15S12M3Brake stage

DS11631 - Rev 7 page 5/19



VGE = ±15 V, dv/dt = 7000 V/µs, TJ = 150 °C

122 ns


Eoff Turn-off switching energy 1.06 mJ

tSC Short-circuit withstand time VCC ≤ 600 V, VGE≤ 15 V, TJstart ≤ 150 °C 10 µs

RTHj-c Thermal resistance junction to case Each IGBT 0.95 1.05 °C/W

RTHc-h Thermal resistance case to heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.90 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.


DS11631 - Rev 7 page 6/19

1.2.2 Diode

Table 7. Absolute maximum ratings of the diode, brake stage



IF Continuous forward current at (TC = 100 °C) 15 A

IFP(1) Pulsed forward current (tp = 1 ms) 30 A




Table 8. Electrical characteristics of the diode, brake stage


VF(terminal) Forward voltageIF = 15 A - 3.0 3.8

VIF = 15 A, TJ = 150 ˚C - 2.1


IF = 15 A, VR = 600 V, VGE = ±15 V,

di/dt = 820 A/μs

- 190 ns





IF = 15 A, VR = 600 V, VGE = ±15 V,

di/dt = 690 A/μs, TJ = 150 °C

- 400 ns




RTHj-c Thermal resistance junction-to- case Each diode - 1.60 1.75 °C/W



DS11631 - Rev 7 page 7/19

1.3 Converter stageLimiting values at TJ = 25 °C, unless otherwise specified.

Table 9. Absolute maximum ratings of the bridge rectifiers

Symbol Description Value Unit


IF RMS forward current 30 A

IFSMForward surge current tp = 10 ms, TC = 25 °C 315

AForward surge current tp = 10 ms, TC = 150 °C 250

I2ttp = 10 ms, TC = 25 °C 496

A2stp = 10 ms, TC = 150 °C 312



Table 10. Electrical characteristics of the bridge rectifiers


VF(terminal) Forward voltage

IF = 15 A - 0.97 1.4V

IF = 15 A, TJ = 150 ˚C - 0.85

IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 mA

RTHj-c Thermal resistance junction-to-case Each diode - 1.20 1.35 °C/W


A1C15S12M3Converter stage

DS11631 - Rev 7 page 8/19

1.4 NTC

Table 11. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test condition Min. Typ. Max. Unit

R25 Resistance T = 25 °C 5 kΩ

R100 Resistance T = 100 °C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 3. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 4. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

1.5 Package

Table 12. ACEPACK™ 1 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 V

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 28.7 nH

Rs Module single lead resistance , terminal to chip 3.9 mΩ

A1C15S12M3NTC

DS11631 - Rev 7 page 9/19

2 Electrical characteristics (curves)

Figure 5. IGBT output characteristics(VGE = 15 V, terminal)

IGBT021220161342OC15

25

20

15

10

5

00 0.5 1 1.5 2 2.5 3 3.5

IC (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT output characteristics(TJ = 150 °C, terminal)

IGBT021220161344OC150

25

20

15

10

5

00 1 2 3 4

IC (A)

VCE (V)

VGE = 19 V

15 V

9 V

11 V

13 V17 V

Figure 7. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT021220161402TCH

25

20

15

10

5

05 6 7 8 9 10 11

IC (A)

VGE (V)

VCE = 15 V

TJ = 25 °C

TJ = 150 °C

Figure 8. IGBT collector current vs case temperature

IGBT161020181203CCT

35

30

25

20

15

10

5

00 25 50 75 100 125 150

IC (A)

TC (°C)

VCC = 15 V, TJ ≤ 175 °C

Figure 9. Switching energy vs gate resistance

IGBT260720171311SLG

7

6

5

4

3

2

1

00 50 100 150 200 250 300

E (mJ)

RG (Ω)

VCC = 600 V, VGE = ±15 V, IC = 15 A

Eon (TJ = 150 °C)

Eoff (TJ = 25°C)

Eon (TJ = 25 °C)

Eoff (TJ = 150°C)

Figure 10. Switching energy vs collector current

IGBT260720171327SLC

2.5

2.0

1.5

1.0

0.5

00 5 10 15 20 25

E (mJ)

IC (A)

VCC = 600 V, RG = 22 Ω, VGE = ±15 V

Eoff (TJ = 150 °C)

Eon (TJ = 150 °C)

Eon (TJ = 25°C)

Eoff (TJ = 25°C)

A1C15S12M3Electrical characteristics (curves)

DS11631 - Rev 7 page 10/19

Figure 11. IGBT reverse biased safe operating area(RBSOA)

IGBT021220161423FSOA

30

25

20

15

10

5

00 200 400 600 800 1000 1200

IC (A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 22 Ω

Figure 12. Diode forward characteristics (terminal)

IGBT021220161506DVF

25

20

15

10

5

00 1 2 3 4

IF (A)

VF (V)

TJ = 150 °C

TJ = 25 °C

Figure 13. Diode reverse recovery energy vs diodecurrent slope

IGBT240820171455Erec

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 200 400 600 800

Erec (mJ)

di/dt (A/µs)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, IF = 15 A, VGE = ±15 V

Figure 14. Diode reverse recovery energy vs forwardcurrent

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.200 5 10 15 20 25

Erec (mJ)

IF (A)

IGBT240820171500RREFC

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, RG = 22 Ω, VGE = ±15 V

Figure 15. Diode reverse recovery energy vs gateresistance

IGBT240820171516RRE

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 50 100 150 200 250

Erec (mJ)

RG (Ω)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, IF = 15 A, VGE = ±15 V

Figure 16. Converter diode forward characteristics(terminal)

IGBT021220161527CDFC

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2

IF (A)

VF (V)

TJ = 25 °CTJ = 150 °C


DS11631 - Rev 7 page 11/19

Figure 17. IGBT thermal impedance

GADG240820171446ZTH

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(typ.)JH

Zth(max.)JC

JC

i 1 2 3 4ri (˚C/W) 0.1482 0.4802 0.2979 0.1220τi (s) 0.0003 0.0066 0.0309 0.2750

RC - Foster thermal network

JH

i 1 2 3 4ri (˚C/W) 0.1589 0.5231 0.7198 0.4488τi (s) 0.0004 0.0097 0.0616 0.3274


Figure 18. Inverter diode thermal impedance

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(typ.)JHZth(max.)JC

IGBT240820171523DNZTH

JC

i 1 2 3 4ri (˚C/W) 0.3364 0.7389 0.4543 0.2159τi (s) 0.0008 0.0064 0.0361 0.2530


JH

i 1 2 3 4ri (˚C/W) 0.3747 0.7300 0.9861 0.6526τi (s) 0.0010 0.0094 0.0636 0.3075



DS11631 - Rev 7 page 12/19

3 Test circuits

Figure 19. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 20. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 21. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

Figure 22. Diode reverse recovery waveform

25

A1C15S12M3Test circuits

DS11631 - Rev 7 page 13/19

4 Topology and pin description

Figure 23. Electrical topology and pin description

L3

L1L2

P

N

P1

GB

B

NB

T1U

T2

VW

EU EV EW

G1

G2

G3

G4

G5

G6

Figure 24. Package top view with CIB pinout

L1

L2 L3

G5

W

G3

V

G1

U

T1

T2

P

B

NB

GB

G6

EW

G4

EV

G2

EU

N

P1

GIPD270320151420FSR

A1C15S12M3Topology and pin description

DS11631 - Rev 7 page 14/19

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

A1C15S12M3Package information

DS11631 - Rev 7 page 15/19

https://www.st.com/ecopack

http://www.st.com

5.1 ACEPACK™ 1 CIB solder pins package information

Figure 25. ACEPACK™ 1 CIB solder pins package outline (dimensions are in mm)

Detail A

Section B-B

4.5±0.1

48±

0.3

41±

0.2

62.

8±0.

5

16.4±0.2

19.4±0.2

33.8±0.3

53±

0.1

42.

5±0.

2

28.1±0.2

15.

5±0.

50

12±

0.35

3.2 BSC

3.2

BSC

2.5±0.2

1.3±0.2

36.

8 RE

F

3.5 REF x45°

8.5

2.3

REF

AA

B

B

25.6

0

19.2

0

16.0

0

12.8

0

6.40

0.00

32.00

25.60

22.40

19.20

16.00

12.80

9.60

0.00

6.40

3.20

L1

L2 L3

G5

W

G3

V

G1

U

T1

T2

P

B

NB

GB

G6

EW

G4

EV

G2

EU

N

P1

0.64±0.03

GADG110720171247SA_8569715_4

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A1C15S12M3ACEPACK™ 1 CIB solder pins package information

DS11631 - Rev 7 page 16/19

Revision history

Table 13. Document revision history

Date Revision Changes

02-May-2016 1 Initial release.

10-Mar-2017 2

Added Section 2: "Electrical characteristics curves" and Section 3: "Testcircuits". Updated Section 5.1: "ACEPACK™ 1 CIB solder pins packageinformation".

Minor text changes.

26-Jul-2017 3

Datasheet promoted from preliminary data to production data.

Modified Table 2: "Absolute maximum ratings of the IGBTs, inverter stage",Table 3: "Electrical characteristics of the IGBTs, inverter stage", Table 6:"Absolute maximum ratings of the IGBT, brake stage", Table 7: "Electricalcharacteristics of the IGBT, brake stage", Table 4: "Absolute maximum ratingsof the diode, inverter stage", Table 5: "Electrical characteristics of the diode,inverter stage", Table 10: "Absolute maximum ratings of the bridge rectifiers",Table 11: "Electrical characteristics of the bridge rectifiers", Table 12: "NTCtemperature sensor, considered as stand-alone", Table 13: "ACEPACK™ 1package".

Modified Figure 10: "IGBT thermal impedance" and.

Modified Figure 22: "Package top view with CIB pinout".

Modified Section 5: "Package information".Minor text changes.

24-Aug-2017 4

Updated Table 3: "Electrical characteristics of the IGBTs, inverter stage",Table 5: "Electrical characteristics of the diode, inverter stage", Table 7:"Electrical characteristics of the IGBT, brake stage", Table 9: "Electricalcharacteristics of the diode, brake stage", Table 11: "Electrical characteristicsof the bridge rectifiers", Section 2: "Electrical characteristics curves".

Minor text changes.

05-Oct-2017 5Updated Table 13: "ACEPACK™ 1 package", Figure 15: "IGBT thermalimpedance" and Figure 16: "Inverter diode thermal impedance".

Minor text changes.

13-Feb-2018 6

Updated Figure 16. IGBT thermal impedance and Figure 17. Inverter diodethermal impedance.

Removed maturity status indication from cover page.

Minor text changes.

17-Oct-2018 7Added Figure 8. IGBT collector current vs case temperature.

Minor text changes

A1C15S12M3

DS11631 - Rev 7 page 17/19

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

1.3 Converter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

2 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

5.1 ACEPACK™ 1 CIB solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

A1C15S12M3Contents

DS11631 - Rev 7 page 18/19

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2018 STMicroelectronics – All rights reserved

A1C15S12M3

DS11631 - Rev 7 page 19/19

datasheet - a1c15s12m3 - acepack™ 1 converter inverter ... · 1.1.2 diode limiting values at tj =...

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