78

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3856

200

180

6

15

4

130(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Absolute maximum ratings Electrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3856

100max

100max

180min

50min∗2.0max

20typ

300typ

Unit

µA

µA

V

V

MHz

pF

Conditions

VCB=200V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=5A, IB=0.5A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC3856(Ta=25°C) (Ta=25°C)

IC–VCE Characteristics (Typical)

hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j -a–t Characteristics

IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)

Pc–Ta DeratingSafe Operating Area (Single Pulse)fT–IE Characteristics (Typical)

0

3

2

1

0 0.5 1.0 2.01.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=10A

5A

Co

lle

cto

r C

urr

en

t IC

(A)

0

15

10

5

0 21

Base-Emit tor Vol tage VBE(V)

(VCE=4V)

125˚

C (

Cas

e T

emp)

25˚C

(C

ase

Tem

p)–3

0˚C

(C

ase

Tem

p)

0 .1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

130

100

50

3.50

Ambient Temperature Ta(˚C)

Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

Wi th Inf in i te heatsink

Without Heatsink

0 25 50 75 100 125 1503 10 100 2000.1

1

0.5

10

40

5

Col lector-Emit ter Vol tage VCE(V)

Co

lle

cto

r C

urr

en

t IC

(A) DC

10ms

3ms

100ms

Without HeatsinkNatural Cool ing

0.02 0.1 1 100.5 5 1520

50

100

300

Col lector Current IC(A)

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

00

5

15

10

21 3 4

Col lector-Emit ter Vol tage VCE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

700mA

300mA500mA

200mA

100mA

50mA

IB=20mA

1A

(VCE=4V)

0.02 0.5 5120

50

200

100

0.1 10 15

Col lector Current IC(A)

DC

Cu

rre

nt

Ga

in h

FE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –100

10

20

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)

Emit ter Current IE(A)

Typ

Typical Switching Characteristics (Common Emitter)

VCC(V)

40

RL(Ω)

4

IC(A)

10

VBB2(V)

–5

IB2(A)

–1

ton(µs)

0.5typ

tstg(µs)

1.8typ

tf(µs)

0.6typ

IB1(A)

1

VBB1(V)

10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

19.9

±0.

3

4.0

2.0

5.0±

0.2

1.8

ø3.2±0.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.45±0.1 5.45±0.1

C

4.8±0.2

0.65+0.2-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0ga. Type No.b. Lot No.

∗ hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

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