Current Status of the EUVL Development at CEL, LASTI, 

University of Hyogo

Takeo WatanabeCenter for EUVL, University of Hyogo

EUVL

Center for EUVL,

Reflectometer (BL10)CSM (BL10)

NewSUBARU Synchrotron Radiation Facility

EUVM & CSM （BL3）

EUV Interference Lithography (BL9B)Outgas and Contamination (BL9C)

EUVL

Resist

Mask

EUV Interference Lithography

10‐5 Pa

Pattern is appeared

EUV

- 1st order0th order

0th order+ 1st order

±1st order

Resist/WaferT-Grating

Resist patternEUV light

Exposure tool

Clean roomClass 100

■The Interference fringes were created at the interference point of 1storder and ‐1st order diffracted lights.■ Replication pattern pitch of the resist pattern has a half pitch size of the diffraction grating. 

hp 15 nm50 μm

150μm

hp 45 nm

hp 40 nm

hp 35 nm

hp 30 nm

hp 22.5 nm

hp 20 nm

hp 17.5 nm

hp 15 nm

Two window transmissiongrating

Four window transmission grating 

hp 50 nmhp 35 nm

hp 40 nmhp 28 nm

hp 28 nmhp 15 nm

Resist replication results

BL‐７ｂWorld first analysis for chemical 

reaction of EUV resist!!

Energy ResolutionE/ΔE=～3000

Resist chemical reaction study by SR absorption spectroscopy for high sensitivity and low LWR

OH

O

O

m n

OH

O

O

m n

＋

＋ e‐

S+

O2S CF2

CF2

CF2O2S

-N S+

O2S CF2

CF2

CF2O2S

-N S+

O2S CF2

CF2

CF2O2S

-NH+‐S‐ ＋ ＋e‐ H+

EUV light ( hν ) 

EUV light ( hν ) S+

O2S CF2

CF2

CF2O2S

-N

Ionization reaction

Direct excitation reaction

Conventional reaction

Additional reaction

＋by‐product

＋

Why 4 times high sensitive in Imidate type 

of PAG under EUV exposure??

H+ ‐F‐

H+  ‐N‐SO2

H+   ‐N‐SO2 ‐CF2

Resist chemical reaction study by SR absorption spectroscopy for high sensitivity and low LWR

Contamination evaluation tool using in-situ ellipsometry adapted to the 10.8-m-long undulator

QMS

Ellipsometry(Source)

Ellipsometry(Analyzer)

Control Valve

0

0.2

0.4

0.6

0.8

1

0

0.2

0.4

0.6

0.8

1

0 50

Fitti

ng

2

Thickn

ess (nm

)

Time (min)

Thickne…Kai^2Fittng 2

Phase-modulation-type spectroscopicellipsometer450 nm～1000 nm

On a witness sample 320 mW/cm2

in-band EUV

On a resist sample149 mW/cm2

Schwarzschild optics(Multilayer mirror, NA 0.3, 30X)

New SUBARU SRBeamLine 3

Load-lock chamber

Vibration isolator

front-end turning mirror(Multilayer mirror)

back-end turning mirror(Multilayer mirror)

(c) CCD camera

X-Y-Z sample stage

X-ray zooming tube（10～200X）

EUV Microscope (EUVM) for EUV mask inspectionSource： Bending magnetInspection: Bright fieldTime： 10～20 sMag.： 300～6000 XNA：0.3

Thank you for your attention !!