conducted noise prediction method for inverter & converter...
TRANSCRIPT
1 © 2016 ANSYS, Inc. November 20, 2017
Conducted noise prediction method for Inverter & Converter
ANSYS KOREASeungjoo Kim
2 © 2016 ANSYS, Inc. November 20, 2017
CONTENTS
I. System simulation Introduction (CE)
II. Key point- Switching Device model
- PCB & Power Module model
- Passive component model
- Magnetic device model
III. Simulation Result
IV. Case Study
V. Conclusion
3 © 2016 ANSYS, Inc. November 20, 2017
System simulation Introduction for EMI (CE)
4 © 2016 ANSYS, Inc. November 20, 2017
Systems Context: Physics + Controls
Electronic Control
Operating Conditions
Safety Requirements
Operational Profiles
Embedded SoftwareSensors
Actuators
How does the system perform?
5 © 2016 ANSYS, Inc. November 20, 2017
System Simulation for Power ElectronicsParasitic Effects in Power Electronic Systems
IGBT based inverter
000
0
0
PhaseBPhaseA
AA
A
A
A
Amp_4
+
V
+
V
+
V
+
V
+
V
+
V
A
+
V
+
V
+
V
+
V
+
V
+
V
+
V
+
V
+
+
Q3D ROM
System-Level Use Case• Validate compliance with EMC
requirements (conducted emissions)• Optimize the performance of power
electronic systems, including AC drive system, DC links, and IGBT modules
Keys to the System Model • Reduced-Order Models of package,
busbar, and cable parasitics from ANSYS Q3D and Maxwell
6 © 2016 ANSYS, Inc. November 20, 2017
Motivation of Simulation
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Three Factors – EM Noise Issue
1) Noise Source(EMI) – Radiated or Conducted Emission
2) Load (Immunity) – immunity response against EMI
3) Noise Path
EMISource
Immunity
ConductiveNoise
InductiveNoise
CapacitiveNoise
RadiationNoise
Conduction Path
Space Path
High Frequency(HFSS)
Low Frequency
Space
“EMC ANALYSIS METHODS AND COMPUTATIONAL MODELS”: Frederick M. Tesche, Michel V. Ianoz:John Wiley & Sons, Inc. 1997 p34-36
Non-Radiation
8 © 2016 ANSYS, Inc. November 20, 2017
What is CM/DM noise?
DM noise cause Voltage&Currentdifference between both lines supplying electric power
Differential Mode
Common Mode
CM noise is occurred due to current flow to Ground and makes Voltage&Current difference between Ground and power paths
9 © 2016 ANSYS, Inc. November 20, 2017
Equivalent circuit of LISN➢ LISN (Line Impedance Stabilization Network)
10 © 2016 ANSYS, Inc. November 20, 2017
Key pointsfor Precise Simulation
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Simulation Model
Tri-Phase 400Vrms Inverter
Input : DC source, Output : Resistance
Cy : Stray Cap of Solar panels
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Measure Environment
SiC inverter
Load Resistor
(12.5ohm*3)
LISN
600Vdc
3phase Normal mode filter
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System Overview➢ STEP1. Switching Device Model
14 © 2016 ANSYS, Inc. November 20, 2017
Half-Bridge Power Module
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Transfer Characteristic
Key point – Switching Device Model(Simplorer)
Output Characteristic
ANSYS Simplorer
Dynamic Characteristic
16 © 2016 ANSYS, Inc. November 20, 2017
Key point – Switching Device Model(Simplorer)
Equivalent Circuit for SimulationExperimental setup
Turn off Turn on
100ns/di
v
100ns/di
v
---simulation---Experimental
---simulation---Experimental
17 © 2016 ANSYS, Inc. November 20, 2017
System Overview➢ STEP2. Circuit board & Power module & Cable Model
18 © 2016 ANSYS, Inc. November 20, 2017
Influence of Parastic LCR
rA
SA
SYTR
VL
dt
dILV
Surge Noise
VY: Surge Voltage(V)、Ls: Line Self inductance(nH)ΔV: Pulse Voltage(V)、Ra: Driver side impedance(ohm)Tr: Pulse Rise time(ns)
rA
Minduc
TR
LCrosstalk
r
MBcap
T
CRCrosstalk
High-Speed Digital Design”:Haward Johnson, Martin Graham:Prentice Hall PTR 1993 P25-P36
capinductotal CrosstalkCrosstalkCrosstalk
Crosstalk Noise
LM: Line Mutual Inductance , CM: Line CapacitanceRA: Driver side impedance(ohm)RB: Receiver side impedance(ohm)
19 © 2016 ANSYS, Inc. November 20, 2017
Key point - Circuit Board & Power Module & Cable (Q3D)
Simplorer Schemetic
Self Inductance
20 © 2016 ANSYS, Inc. November 20, 2017
Key point - Circuit Board & Power Module & Cable (Q3D)
The Value of Measurement and Simulation are almost identical
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Importing Q3D model to Simplorer
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System Overview➢ STEP3. Passive components & LC filter model
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Key point – Magnetic device
B-H NL Char.- Flux density rely on the magnetic field- Permeability of core rely on the Freq
Inductance rely on Freq&Current
Skin/Proximity effect- Current distribution change rely on the Freq
Resistance & Inductance rely on the Freq
Coupling Maxwell and Simplorer
- Magneto static (saturation) Table model
- Eddy current (skin/proximity, Freq dep) SS model
-Transient (saturation, skin/proximity) Co-simulation
Coupling HFSS/Q3D and Simplorer
- State Space model ( S-parameter )
24 © 2016 ANSYS, Inc. November 20, 2017
Key point – Magnetic device (Maxwell)
B-H Curve :Saturation characteristic of Core
Convert to Table model
1/14 Model
25 © 2016 ANSYS, Inc. November 20, 2017
Key point – Magnetic device (HFSS/Q3D)
Simplorer’s System Circuit
26 © 2016 ANSYS, Inc. November 20, 2017
Key point – Magnetic device (HFSS/Q3D)
Without Choke filter With Choke filter
115dBuV
118dBuV100dBuV
73dBuV
17dBuV
Vdm (dBuV)
Vcm (dBuV)
Vdm (dBuV)
Vcm (dBuV)
27 © 2016 ANSYS, Inc. November 20, 2017
Key point – Passive Components (Simplorer)
1.00E-001 1.00E+000 1.00E+001 1.00E+002 1.00E+003 1.00E+004 1.00E+005F [kHz]
-90.00
0.00
90.00
Phase [deg]
-50.00
-25.00
0.00
25.00
Gain
[dB
]
00_nonideal_RImpedance
Curve Info
-E1.V/E1.IAC
R1C1
L1
n
p
+
V
VM1
A
AM1
p
n
E1
Resistor model
n
p
R1
C1
L1
+
V
VM1
A
AM1
Inductor model
1.00E-001 1.00E+000 1.00E+001 1.00E+002 1.00E+003 1.00E+004 1.00E+005F [kHz]
-90.00
0.00
90.00
Phase [deg]
-40.00
-15.00
10.00
25.00
Gain
[dB
]01_nonideal_LImpedance
Curve Info
-E1.V/E1.IAC
n
p
R1
C1
L1
+
V
VM1
A
AM1
1.00E-001 1.00E+000 1.00E+001 1.00E+002 1.00E+003 1.00E+004 1.00E+005F [kHz]
-90.00
0.00
90.00
Phase [deg]
-40.00
-15.00
10.00
35.00
60.00
Gain
[dB
]
02_nonideal_CImpedance
Curve Info
-E1.V/E1.IAC
Capacitor model
Passive Components with Frequency dep. S-parameter model or Equivalent circuit model Ignore Saturation characteristic
28 © 2016 ANSYS, Inc. November 20, 2017
Result
29 © 2016 ANSYS, Inc. November 20, 2017
Simulation and Experimental result
Similar trend Less than 15dB error
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Case study
31 © 2016 ANSYS, Inc. November 20, 2017
Case study – Flyback converter
32 © 2016 ANSYS, Inc. November 20, 2017
Case study – Flyback converter
Capacitance Matrix
(30 min) – 1 >10pF
– 11 5-10pF
– 24 1-5pF
–428 <1pF
•Inductance Matrix: R,L,M
(30 min) –63 Paths (23 Pri & 40 Sec)
–31 Paths (16 Pri & 25 Sec)
33 © 2016 ANSYS, Inc. November 20, 2017
Case study – Flyback converter
0.15 0.3 1 3 10 30-20
0
20
40
60
80
100
120Simulated -Black vs Measured -Red CM EMI Spectrum
CM
Nois
e (
dBV
)
0.15 0.3 1 3 10 30-20
0
20
40
60
80
100
120Simulated -Black vs Measured -Red DM EMI Spectrum
DM
Nois
e (
dBV
)
Frequency (MHz)
Simulated
Measured
34 © 2016 ANSYS, Inc. November 20, 2017
Case study – Flyback converter
35 © 2016 ANSYS, Inc. November 20, 2017
Case study – Flyback converter
36 © 2016 ANSYS, Inc. November 20, 2017
n
p
R1
C1
L1
+
V
VM1
A
AM1
Case study – Flyback converter
37 © 2016 ANSYS, Inc. November 20, 2017
Case study – Flyback converter
38 © 2016 ANSYS, Inc. November 20, 2017
0.15 0.3 1 3 10 30-20
0
20
40
60
80
100
120Simulated Total EMI Spectrum
Noi
se (d
B V
)
Frequency (MHz)
Nominal EMI
Filtered EMI
Filtered/Shielded EMI
CISPRA
CISPRB
Case study – Flyback converter
39 © 2016 ANSYS, Inc. November 20, 2017
Conclusion
- Switching device, one of noise source
- Need to Detail Switching device model Ideal < SPICE < Dynamic
- influence to noise of Magnetic device
- Passive component with Frequency dependent impedance
- With accurate model, Possible EMI prediction.
- Estimate result after enhancement
40 © 2016 ANSYS, Inc. November 20, 2017
Thank You
Discussion & Next Steps