compositional dependence of damage buildup in ar - ion bombarded al x ga 1-x n
DESCRIPTION
Soltan Institute for Nuclear Studies. Compositional dependence of damage buildup in Ar - ion bombarded Al x Ga 1-x N. Karolina Danuta Pągowska. Outline. 1. Energy loss of ions in solids, collision cascade 2. Ion implanter 3. FET 4. RBS and channeling - PowerPoint PPT PresentationTRANSCRIPT
Compositional dependence of damage buildup in Ar - ion
bombarded AlxGa1-xN
Karolina Danuta Pągowska
Soltan Institute for Nuclear Studies
2
1. Energy loss of ions in solids, collision cascade
2. Ion implanter
3. FET
4. RBS and channeling
5. Channeling spectra for ion bombarded GaN
6. Multi-step damage accumulation in irradiated crystals
7. Summary
Outline
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
En
erg
y
/ M
eV
Rp = 5.21 µm
Depth/ µm
0 1 2 3 4 5 6
Energy - Depth – Relation for 1.5 MeV He–ions in Si
4
1/2
d/d
(d/d)n
(d/d)e
200 keV Ar+
15 keV 2 MeV
0.9 keV He+ 800 keV 2 MeV
0.008 keV 70 keV 2 MeV
Ion velocity ~ (Energy)1/2
En
erg
y lo
s s
He ions
He ions
Ar ions
Ar ions Ionization
Displace-ments
dEe/dx
dEn/dx
Energy loss of ions in solids
5
Collision cascade
6
Target chamber
Wobbler
Magnetic lenses
Accelerator
Magnetic separator
Ion source
Extraction
Ion implanter
7
• Doping
• Insulating region formation (patterned implantation)
Mask
Ion beam
Sample
Ion implantation in compound semiconductors and their heterostructures in usually performed for:
8
Si substrate
Ion beam
Mask
Field – Effect Transistor (FET)
9SiO2 Si
SOI – Silicon On Insulator
10
Detector
x0
- O- Si
4He, 2 MeV
x0
Si SiO2
Energy
Depth
x0
Yie
ld
Principles of Rutherford Backscattering Spectrometry
11
Ion channeling
12
Short summary of HRXRD superlattice analysis
Defect analysis using ion channeling
13
Channeling spectra for ion implanted GaN
GaN
channel
100 200 300 400 500 600 700 800
yiel
d
0
500
1000
1500
2000
2500
3000 random 1*1017 4*1016 1*1016
5*1015 3.5*1015 2*1015
1*1015 5*1014 1*1014
5*1013 1*1013 5*1012 virgin
14
Experiment and simulation
Fluence 1*1015
energy200 400 600 800 1000 1200 1400
yiel
d
0
500
1000
1500
2000
experimentsimulation McChasy
15
Distribution of displacement atoms
Fluence 1*1015
depth (nm)
0 200 400 600 800 1000 1200
disp
lace
men
t ato
ms
%
0
2
4
6
8
10
12
14
16
18
16
Schematic representation of the MSDA model
Fluence
Acc
umul
ated
dam
age
FluenceA
ccum
ulat
ed d
amag
e
Fluence
Acc
umul
ated
dam
age
Structure A
Structure BStructure C
Structure A
Structure A
Structure B
Structure B
Structure C
Structure C
Structure A
Structure A
Structure A
Structure B
Structure B
Structure CA
B
A
B
B
C
Low fluenceStage 1
Medium fluenceStage 2
High fluenceStage 3
a
b
c
17
Simulation
fluence (x 1014)
0 20 40 60 80
accu
mul
ated
dam
age
0
20
40
60
80
100
simulationx3
x2 fd3
fd2
fd1
Simulation multi-step accumulation
18
For GaNfd1=6sig1=0.77fd2=68.5sig2=0.0398x2=12.5fd3=100sig3=0.008x3=400
Three-step accumulation
19
Three-step accumulation
20
For AlGaN
fd1=6
sig1=0.86
fd2=54
sig2=0.015
x2=5
Two-step accumulation
21
Two-step accumulation
22
Two-step accumulation
For AlNfd1=7sig1=0.245fd2=63.5sig2=0.02x2=10
23
Two-step accumulation
24
Summary
GaN Three-step accumulation
AlGaN Two-step accumulation
AlN Two-step accumulation
25
Thanks for attention