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Eugene Technology 2
Company Overview
Company name Eugene Technology Co., Ltd.
Established 05 JAN, 2000
CEO Pyung Yong Um
Capital / MRKT CAP \6.14B / \280.6B (as of May 12th)
Address 209-3 Chugeri, Yangji myun, Cheoin gu, Yongin, Kyunggi do, Korea
Main Products Thermal LP-CVD & Plasma Process
Home Page www.eugenetech.co.kr
Eugene Tech is R&D oriented company, which is specialized in Single-Wafer Process Solution for
Diffusion area including Thermal LPCVD and Plasma Treatment processes.
Up coming 450mm Convergence, foreseeable increased needs on Single-Wafer Process!
Name Position Major Career
PY UM CEO Hynix, Teradyne, Brooks Auto.
Dr. YW KIM CTO PhD Plasma Eng., VP R&D in Hynix
SW SHIN Exec Dir 20 Yrs in Hynix R&D
DJ KIM Exec Dir 19 Yrs in Samsung & Hynix
Dr. JK KIM Exec Dir 20 Yrs in Hynix
SH WOO Exec Dir 14 Yrs in Hynix R&D
DK LEE Director 15 Yrs in Samsung R&D
YD KIM Manager 15 Yrs in Samsung & Hynix R&D
HW KIM Manager 10 Yrs in Hynix R&D
Dr. Sergey Z Manager PhD Moscow Power Eng. Institute, LG Electric
200/300mm Single wafer type ; LPCVD Nitride/Oxide/Poly Process
JDA with Hynix
JDA with SAMSUNG
300mm Single wafer type ;
Plasma Nitridation/Oxidation Process
200/300mm Single wafer type ; LPCVD Nitride/Poly Process
300mm Single wafer type ;
Plasma Nitridation/Oxidation Process
R&D Key MemberJDA Engineering
Manpower
over 80%
Eugene Technology 3
Thermal LPCVD
Blue JayTM
Plasma Treatment System
Albatross™
Key Products & its Processes
Dual Rotated Spiral Antenna
ICP Antenna
Quartz Cylinder
Low Electron Temperature ~ 1.0 eV Plasma Damage Free
High Density 4E+12
Wide Process Windows2 Zone 1 T.C Heater (100℃~800℃)
Metal Contamination Free
Eugene Tech-patented Plasma Source Very Low Thermal budget
Excellent Uniformity
Less particle generated
Diverse Process Applications
Very Thin Layer Deposition
Nitride /Oxide /Poly Nitridation /Oxidation
Eugene Technology 4
Eugene Technology’s patented Plasma technology
1ST Antenna Coil
(PCW Cooling)2ND Antenna Coil
(PCW Cooling)
Gas Inlet Port
Quartz Tube
Antenna
Support
ICP(Inductively Coupled Plasma)Source Properties
. High Plasma Density : > 4.0E12 atoms/cm3
. Plasma Damage Free : ~ 1 ev
. Heater : 100℃~800℃
. N-Concentration range 3.3 ~30 atomic% Arial
. Patent No. : 10-0800401, 10-0800396,
Dual Rotated Spiral Antenna(DuRoSA)
Eugene Technology 5
Key Products & its Processes
Cyclic CVDVarious Spacer Deposition available with
- Excellent Thickness Uniformity
- Good Loading Effect
- Excellent Step Coverage
Very Low Temperature Deposition
- 50℃ ~ 450℃- Suppress Thermal Degradation
Excellent Wet Etch Rate
- Thermal Ox < Cyclic CVD < HTO
(0.5Å /Sec)* (1.0Å /Sec)* (1.9Å /Sec)*
*300:1 BOE
Application for Sacrifice Layer
- Wet Etch Rate Controllability
by Densification process technique
- Patented process and system
High Throughput
- up to 180WPH
Easy MaintenanceSilicon Nitride Silicon Oxide
Eugene Technology 6Nitride DRAM
Nitride LOGIC
Oxide FLASH
Poly FLASH
Nitridation DRAM
Nitridation FLASH
Oxidation FLASH
Oxidation DRAM
Poly DRAM
Poly LOGIC
Expanding to
12 layers
2010 2011 2013 ~ 2012
Expanding to
23 layers
Expanding to
45 layers
Cyclic CVD Seeding Poly
Cyclic CVD SiN, SiO2 Logic, Flash, DRAM
Oxide LOGIC
2009~ 2008
5Xnm 4Xnm 3Xnm 2Xnm
12 layers
23 layers
45 layers
Application Expansion
(LPCVD & Plasma)
6 layers
Expanding to
75 layers
Expanding to
100+ layers
75 layers
100+ layers
Applications;
Coping with Device Geometry Scaling Down & Customer’s Needs
Eugene Technology 7
Domestic & Global Activities
Eugene
Technology.,
Inc., Taiwan
Eugene
Technology.,
Inc., USAEUROPE
CHINA
Eugene
Technology.,
Ltd., Korea
NAND
Logic
Logic
DRAM
DRAM
DRAM
NOR
450mm
Logic
Logic
NAND
Logic
With our Single-Wafer Process technology & knowhow, we can deliver optimal customized process
solutions to various clients.
As the device geometry scaling down, demand on less thermal exposure & precise Single-Wafer process
will prevail.
And, Eugene Technology is certainly one of the solution providers.
Eugene Technology 8
Capability
450mm LPCVD Introduction
One Process Chamber
with
Dual process capability
Poly and SiN
------------------------------
450mm LPCVD System
Very Low Thermal budget
Excellent Uniformity
Less particle generated
Diverse Process Applications
Very Thin Layer Deposition
Eugene Technology 9
450mm LPCVD Introduction
Process ModulePumping cross section view Pumping cross section view
Eugene Technology 10
450mm LPCVD Introduction
Process Chamber closed Process Chamber open
Eugene Technology 11
System Overview
Category Description
Activation SourceThermal
(Resistance heating type)
Flow Dynamics Shower Head
Pressure Control Baratron Gauge & Throttle Valve
MFC Control Digital type
System Interface Device Net
In-situ Chamber Clean Remote Plasma Cleaning (NF3)
Heater
Material Ceramic AlN
Temperature Control 2 zone 2 T.C.
Lifetime Target 1 yr (TBD)
Process Chamber Max Multi 4 Chamber / Cluster tool
Sub ModuleDry Pump Each PM & 1 TM Pump
Scrubber Burn type
450mm LPCVD Introduction
Eugene Technology 12
450mm LPCVD Introduction
Process
Precursor Source (doping) Gas
300mm StatusSiH4 Si2H6 NH3 N2O
PH30.1%N2
B2H60.1% H2
SiliconNitride
● ● Field Proven & Mass Product
● ● Under develop for Low
Temperature (~550 ℃)
SiliconOxide
● ● Field Proven & Mass Product
● ● Under Develop for Low Temperature (~550 ℃)
UndopedSilicon
● Field Proven & Mass Product
● Field Proven & Mass Product
n-type Silicon
● ● Field Proven & Mass Product
● ● Field Proven & Mass Product
p-type Silicon
● ● Field Proven(p-type doping at 500 ℃)
● ●Field Proven(p-type doping at 500 ℃)
Various Process Applications & Solutions
Eugene Technology 13
450mm LPCVD Preparedness / Overall Schedule
Month
Manufacturing
April
Kickoff & Pre-Design
NovOctSepAugJulyJuneMayCategory
Design
Site Preparation
S2/S8
Source
Inspection
Shipping to
Dock
Tool Installation/
Qualification
Kickoff & Pre-design
Design Review
Approval for technical Issues
Shipping Tool Dock
Tool
Installation Qual for SL1Qual for SL2 &
Tool Released
Eugene Technology 14
DRAM 2010 2011 2012 2013 2014
Design 8F2 Conv 6F2 BG 6F2 BG 4F2 Pillar 4F2 Pillar
LPCVD
POLY, SiN, SiO2
Plasma
SystemPlasma Nitridation, Plasma Oxidation, Plasma Doping
Cyclic CVD
SiO2, SiN, POLY
450mm Conversion Roadmap & Eugene Tech’s Status
Design ProductionProcess & System
Evaluation
Design Production
Process &
System
Evaluation
Design Production
Process &
System
Evaluation
2nd Half of 2010: 1st draft design, Specification review, & Terms & Conditions Discussion.
1st Half of 2011: Terms & Conditions agreed and Contract completed.
Manufacturing begins including system integration with other modules & components.
Continuous discussion with SEMATECH/ISMI
2nd Half of 2011: 1st 450mm LPCVD system Fab in at CNSE, Albany, New York
2012 & beyond: Successful process development with SEMATECH/ISMI.
450mm LPCVD Oxide, Plasma Nitridation & Oxidation, and Cyclic CVD will be available.
And, Eugene Tech would like to offer all available process solutions to SEMATECH/ISMI
for further collaboration together.
Eugene Technology 1515
Goals: Successful Demonstration on Mature Pre-Production Tool
Processes: Robust Diffusion process with good uniformity and film quality
Productivity: Meet current 300mm’s performance by 2013
SEMATECH/ISMI
Eugene Tech IDMs
Achieving successful outcome through Strong Collaboration between three parties;
SEMATECH/ISMIC, IDMs, and Eugene Technology
Eugene Technology 16
Thank you!
Q & A