cmos rf power amplifiers: nonlinear, linear, linearized
TRANSCRIPT
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CMOS RF Power Amplifiers:Nonlinear, Linear, Linearized
David Su
Atheros Communications
Sunnyvale, California
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2 of 41 IEEE Local Chapter Nov 2002
Outline
1.
• Introduction• Nonlinear Power Amplification• Linear Power Amplification• Linearization using Envelope
Elimination and Restoration• Conclusion
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3 of 41 IEEE Local Chapter Nov 2002
RF Power Amplification
• Purpose: Delivers “narrow-band” RF power to a
50-ohm antenna
• Performance:Output Power
Efficiency
Linearity
Antenna
Transmitter RF PA
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4 of 41 IEEE Local Chapter Nov 2002
Traditional PA Classification
Class Modes ConductionAngle
OutputPower
MaximumEfficiency Gain Linearity
ACurrentSource
100% moderate 50% Large Good
B 50% moderate 78.5% Moderate Moderate
C < 50% small 100% Small Poor
D
Switch
50% large 100% Small Poor
E 50% large 100% Small Poor
F 50% large 100% Small Poor
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5 of 41 IEEE Local Chapter Nov 2002
PA Classification & Input Drive
Vdd
0
2Vdd
0 100%
Class C Class Class ABB
ClassA
ClassD,E,F Switch
CurrentSource
Conduction Angle (VDC)
Inp
ut
Sig
nal
Ove
rdri
ve(V
in)
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6 of 41 IEEE Local Chapter Nov 2002
Power Amplifier Classification
Vdd
0
2Vdd
0 100%
Class C Class Class ABB
ClassA
ClassD,E,F
SaturatedClass A
Switch
CurrentSource
SaturatedClass C
Conduction Angle (VDC)
Inp
ut
Sig
nal
Ove
rdri
ve(V
in)
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7 of 41 IEEE Local Chapter Nov 2002
CMOS for RF Power Amplification
• Traditional RF PAs use GaAs / Bipolar.
• Advantages of CMOS:Low cost, high-yield, high-integration
Efficient switched-mode amplifier
• Disadvantages of CMOS:Low bandwidth
Low breakdown voltage
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8 of 41 IEEE Local Chapter Nov 2002
Simplified RF Output StageVDD
IDCL
VDD
VD
ID
Vin
+
–
IDC
CGS
CGD
RL
CC
gm VinIL
ID gmVin=
IL
VDDRL
-------------≤
VL
Vin ro
ID
VD
VDD
IDC
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9 of 41 IEEE Local Chapter Nov 2002
C
RL
RL
AC Equivalent Model
Class-A (Linear) Operation
Pout 12--- I
L2
RLVDD
2
2RL----------------≤=
For Pout = 1 W (Class A), RL = 4.5 Ω @ VDD = 3VRL = 3.1 Ω @ VDD = 2.5V
⇒Needs Impedance Transformation Network → 50 Ω antenna⇒Keep parasitic loss << RL of 3.1 Ω
L
VDD
IL
VDDRL
-------------≤
Vin
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Efficiency of Class A operation
MatchingNetwork
PD
ID
L
VDD
VD
ID+
–
Pout VDD2
2RL----------------≤
Psupply IDCxVDDVDD
2
RL----------------= =
Efficiency PoutPsupply------------------------- 50%≤=
VD
Vin
VDD
IDC
IDCC
Vin
PD = ID x VD ↓ ⇒ Efficiency ↑
RL
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Efficiency-Linearity Tradeoff
PD
ID
VD
Vin
MatchingNetwork
L
VDD
VD
ID+
–
• Large input signal
• Square wave output ID and VD
• Non-overlapping ID and VD1.
Pout VDD2
RL----------------=
IDC
C
Vin
PD = 0 ⇒ Efficiency =100%
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Low-Voltage Operation
0 0.5 1.0 1.50
1
2
3
4
5
6
7
8
9
10
Ideal Output Power (W)
Eq
uiv
alen
tL
oad
Res
ista
nce
(Ω)
Class A,B
Class C
25%
Idc
VDD = 3V
RloadM1
10%5%
Pout VDD2
nRload----------------------≈
RloadVDD
2
nPout------------------≈
SwitchedMode
Class A,B: n = 2Class C: n > 2
Switched-Mode: n = 1
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13 of 41 IEEE Local Chapter Nov 2002
L
VDD
VD 50 ohm
+
–
IDC
Vin
Practical Power Amplifier DesignImpedance
Transformation
HarmonicTuning
VDC
InputDrive
3
2
1
LOAD PULL Optimization1. Impedance transformation: Output Power2. Harmonic Tuning: short @ 2fc & open@ 3fc for non-overlap ID & VD to
maximize efficiency3. Input drive: VDC -> Conduction Angle; Vin -> current source vs switch
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Nonlinear Power Amplifier
• Hewlett Packard Labs(with W. McFarland)
• 800-MHz 32dBm AMPS PA with 42 %PAE in 0.8 µm CMOS
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Choose n = 1.5 (assume 67% efficiency due to Ron > 0),VDD = 2.5V,For Pout = 1 W,
Rload = 4.2 Ω [Pout = VDD2/n Rload ]IDC = 0.49A [IL (peak) = IDC & Pout = 0.5 x IDC
2 x Rload]Ron = 1 Ω [Assume no overlap; PD = 0.5W = 0.5 x (2 IDC)2 x Ron]
⇒ Output transistor sizing: Ron < 1 Ω
Switched-Mode Design
MatchingNetwork
Antenna
L
VDD
Ron
Rload
RloadVDD
2
nPout------------------≈
IDC
Pout VDD2
nRload----------------------≈
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Output Stage Design
IN A = 25dB5dBm
OUT
50Ω
VDD=2.5V
3.8nH 3.8pF
7.6pF2.5Vp
25pF
Zload
VD
ID
107 108 109 1010 10111
Frequency (Hz)
VD
ID +
–
Q~5101
|Zload|
102
103
104
Imp
edan
ce(o
hm
)
8400/1
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Complete Amplifier
IN
OUTL1L2L3
M2
M150
Cp
VDD
M3
M4
M4c200
L4c
CMOS IC bond wiresL4
RF choke
Freq 824 – 849 MHz
VDD 2.5V
Pout 30 dBm
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Die Photo 0.8µm CMOS
1.5 mm2
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Power Supply Voltage (Volts)
Ou
tpu
tP
ow
er(d
Bm
)
Po
wer
Ad
ded
Eff
icie
ncy
(%)
1.0 1.5 2.0 2.5 3.010
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
Measured POUT and Efficiency
Efficiency
Power
Drain Efficiency ~ 68%
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Linear Power Amplifier
• Atheros Communications(with D. Weber et al)
• 5-GHz 18dBm OFDM PA for IEEE802.11a in 0.25 µm CMOS
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Spectral-Efficient Modulation
• 64-QAM (Quadrature Amplitude Modulation)— Large signal to noise ratio > 30dB
• OFDM (Orthogonal Frequency Division Mux)— Large peak to average power ratio of or
17dB52
Requires High Linearity in PA
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Power Amplifier Design• Large peak to average ratio (PAR) of or 17dB
• Signal peaks are infrequent: 0.25dB SNRdegradation when PAR reduced to 6dB for16-QAM*.
• Implications:- Poor power efficiency- With 6dB PAR, to obtain 40mW (16dBm) requires
Psat of ~22dBm or 160mW- With 17dB PAR, to obtain 40mW (16dBm) requires
Psat of ~33dBm or 2W
*Van Nee & Prasad, OFDM for Wireless Multimedia Communications,Artech House, 2000
52
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Linear PA makes efficient radios
• Frequency bandwidth is precious--> Maximize network capacity
• Energy/bit (battery life)More bits sent per second--> PA + the rest of the radio
are ON for shorter duration
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Linear PA Design• Input load impedance
- signal dependency- cascode
• VGS overdrive- dc bias with capacitive level-shift
• Output load impedance- impedance matching network
• Stability- cascode
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Power Amplifier Topology
Output
Bias
L3
Input
L2*
M2 M3
C2
L4*
Vpa = 3.3V • Class A operation
• Cascoded- 3.3V supply voltage- Stability
• Capacitive Level-shift- Metal-2,3,4,5 stacks
• Inductive loads
• Differential- Off-chip balun
* C.P. Yue and S.S. Wong, IEEE JSSC, May 1998
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Power Amplifier Schematic
Vin+Vin-
Vpa=3.3V
L1p
C1pVout+
Bias
L3p
Bias
L2p
M2pM3p
C2p
L4p
L1n
C1nVout-
Bias
L3n
Bias
L2n
M2n M3n
C2n
L4n
PSAT = 22 dBm
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27 of 41 IEEE Local Chapter Nov 2002
Die Photograph
Tx
Rx
Synth
Bias
Log
ic
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Measured BPSK OFDM Spectrum
16.25MHz
POFDM = 17.8 dBm
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Measured Transmit Output Power
6 9 12 18 24 36 48 54
12
14
16
18O
FD
MO
utp
ut
Po
wer
(dB
m)
Data Rate (Mbps)
10
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Linearized Power Amplification
• Hewlett Packard Labs(with W. McFarland)
• Linearization IC for NADC withefficiency improvement from 36% to49% using envelope elimination andrestoration
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Applying Integration to RF PA
Transistors are cheap.• LARGE Output Power: Use switched-mode output stage• HIGH Efficiency: Use switched-mode output stage• GOOD Linearity: Use linearization circuits so that the output
stage does not need to be linear.
SOLUTION: Switched-mode output stage+ linearization.
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Gate
VDD
Envelope Elimination and Restoration
Limiter
RF Input
RF Output
Phase
Amplifier
Ref: L. Kahn, Proc IRE, July 1952
Magnitude
EnvelopeDetector
Switched-Mode PA
Amplifier
Combiner
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Closed-Loop EER Implementation
Limiter
RF Input RF OutputMagnitude
PhaseRF PowerAmplifier
Atten.
+
_
SwitchingPower Supply
∆-Mod Class-D
Σ
Buffer
EnvelopeDetector
EnvelopeDetector
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∆-Modulated Switching Power Supply
• Closed-loop system• Modulation to generate a two-level output
⇒ Pulse width modulation vs. Delta modulation
• Efficient Class-D driver
+_
Load
Σ
LowpassFilter
Modulation
Ref Out
Class-DDriver
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Switched-cap Circuit for ∆ Modulation
Subtraction &Compensation
OutputBuffer
Comparator LowpassFilter
Off-Chip
φ1
φ1
φ2
φ1
φ1
φ2
φ2
φ1
φ1
φ2
φ2
φ1
φ2
φ2
φ1
φ1
φ2
φ2
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Die Photograph
Buffer∆-Mod SwitchingPower Supply
EnvelopeDetector
(2 mm2)(1.9 mm2)
(0.03 mm2)
(0.34 mm2)Limiter
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Supply Voltage 3.0V
Output Voltage 0.1 to 2.65V
Output Current 0.75 A
Bandwidth 100 kHz
Harmonic Distortion –55 dBc
Efficiency 80%
Die Area 3.9 sq mm
Switching Power Supply
Frequency (in kHz)
Ou
tpu
tS
pec
tru
m(i
nd
B)
0 20 40 60 80 100–80
–70
–60
–50
–40
–30
–20
–10
0
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Spectral Mask of CMOS PA
836.5M
–60
–40
–20
0
Am
plit
ud
e(1
0d
B/d
iv)
Frequency (15kHz/div)
Saturated Output
Linearized Output
RBW: 300 HzVBW: 100 Hz
836.395M 836.605M
ACP1 –30dBc
ACP2 –48dBc
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π/4 QPSK Constellation of CMOS PA
With LinearizationWithout Linearization
Mag Err = 2.2%rms
Phase Err = 1.5orms
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Output Power (dBm)
linearized
original
10 15 20 25 300
10
20
30
40
50
60
Po
wer
-ad
ded
Eff
icie
ncy
(%)
nonlinear
Peak Linear Power: 26.5dBm → 29.5dBm
Peak Linear PAE: 36% → 49%
Efficiency of 4.8-V GaAs PA
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Conclusion
• Nonlinear (switched-mode) PA provides(+) large output power and high efficiency(–) poor linearity
• Linear PA provides(+) linearity, spectral efficiency(-) poor efficiency
• Linearization using envelope elimination andrestoration(+) linear RF output + high efficiency(-) implementation complexity