charged particle detection using the timepix and … · charged particle detection using the...

CHARGED PARTICLE DETECTION USING THE TIMEPIX AND TIMEPIX3 CHIPS AND FUTURE

PLANS

M. Campbell, J. Alozy, R. Ballabriga, E.H.M. Heijne, S. Kulis, X. Llopart, T. Poikela, E. Santin, L. Tlustos and W. Wong

CERN, EP Department1211 Geneva 23Switzerland

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- U INFN Cagliari- CEA-LIST Saclay- CERN Genève- U Erlangen- ESRF Grenoble- U Freiburg- U Glasgow- IFAE Barcelona- Mitthoegskolan- MRC-LMB Cambridge- U INFN Napoli- NIKHEF Amsterdam- U INFN Pisa- FZU CAS Prague - IEAP CTU in Prague - SSL Berkeley

http://medipix.web.cern.ch/MEDIPIX/

The Medipix2 Collaboration (1999-present)

University of Canterbury, Christchurch, New Zealand CEA, Paris, France CERN, Geneva, Switzerland, DESY-Hamburg, Germany Albert-Ludwigs-Universität Freiburg, Germany University of Glasgow, Scotland, UK Leiden University, The Netherlands NIKHEF, Amsterdam, The Netherlands Mid Sweden University, Sundsvall, Sweden IEAP, Czech Technical University, Prague, Czech Republic ESRF, Grenoble, FranceUniversität Erlangen-Nurnberg, Erlangen, Germany University of California, Berkeley, USA VTT, Information Technology, Espoo, Finland KIT/ANKA, Forschungszentrum Karlsruhe, GermanyUniversity of Houston, USADiamond Light Source, Oxfordshire, England, UKUniversidad de los Andes, Bogota, ColombiaUniversity of Bonn, GermanyAMOLF, Amsterdan, The NetherlandsTechnical University of Munich, GermanyBrazilian Light Source, Campinas, Brazil

The Medipix3 Collaboration (2005-present)

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Hybrid Silicon Pixel Detectors

Fill factor is 100 % (away from periphery)Full depletion of sensor allows prompt charge collection Extremely high SNR easy to reach Standard CMOS can be used allowing on-pixel signal processing Sensor material can be changed (Si, GaAs, CdTe..)

But because of low volumes bump bonding is still expensive

p+

n-

ASICn-well

p-substrate

Semiconductor detector

Bump-bond contact

Charged particle

gmIin Vout

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Micro-channel plate readout

Charge distribution on stripsCharge Cloud

MCP stack

Tube Window withphotocathode

γ

MCP can be used to detector electrons, ions or neutrons(when e.g. B doped)

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Gas detector readout - InGrid

Semiconductor detector is replaced with charge amplification gridPermits lower energy events to be detected

NB: GEM foils may be used in place of the InGrid foils

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Hybrid pixel detectors

• Developed initially for LHC• 3 large scale vertex detector systems operating smoothly• One large RICH detector system (based on hybrid pixels

in a photodetector tube) contributing to LHCb physics

• In the Medipix2 and Medipix3 Collaborations we have taken the technology into many new fields

• This talk will focus on charged particle tracking and detection using Timepix and Timepix3

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Outline

• Particle detection and tracking using Timepix and some examples of applications

• TheTimepix3 chip and some use cases

• The VELOpix chip

• Tiling large areas

• Summary

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Outline





• Summary

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Pixel matrix 256 x 256Pixel size 55 x 55 μm2

Technology CMOS 250 nmMeasurement modes Programmable per pixel:

• Single particle counting • Timepix (arrival time wrt shutter)• Time over Threshold

# thresholds 1 per 55 μm pixel4-bit threshold adjustment

Counter depth 1 x 14-bits

Readout type Frame based• Sequential R/W

Readout Time Serial: <100ms at 100MHzParallel: <300ms @ 100MHz

Minimum threshold ~ 650 e-

Timepix Specifications

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Timepix miniaturised readout

IEAP/CTU, Prague

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CERN@school

Simon Langton School, Canterbury, England

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LUCID detector

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Annual CERN@school Symposium

Langton student Katherine Evans presenting at the CERN@schoolSymposium in September 2014

2016 Symposium to be held at Rutherford Lab tomorrow

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Institute for Research in Schools

-16- 16Image of the astronaut Chris Cassidy working near the Timepix USB on the International Space Station (Courtesy of NASA, photo ref. no. iss036e006175)

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Timepix - 4s exposures

South China Sea South Atlantic Anomaly

University of Houston, IEAP Prague, NASA

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0.3 mGy/d

3 mGy/d

5.5 mGy/d

REM Dose Rate Data (µG/min)

University of Houston, IEAP Prague, NASA

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Carbon Therapy beam monitoring

Slide courtesy of M. Martisikova, German Cancer Research Centre, Heidelberg

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Carbon Therapy beam monitoring

Slide courtesy of M. Martisikova, German Cancer Research Centre, Heidelberg

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Low Energy Electron Microscopy

I. Sikharulidze, J-P Abrahams and co-workers‘Medipix2 applied to low energy electron microscopy’, Ultramicroscopy 110 (2009) 33 - 35

MCP + CCD imagesMedipix2 Images Graphene flakes

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Rutherford backscattering Spectrometry/Channeling @CTN/IST (Lisbon) -> He2+ RBS/C on Si single crystal

• Timepix detector proved to have energy sensitivity andeffective count rate for practical structural analysis byRBS/C

• Improvement on spatial resolution compared with previously used resistive charge PSD

Resistive charge PSD Timepix single chip

Slide courtesy of E. Bosne

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First on-line run with Timepix @ISOLDE CERN24Na : GaN b- - Emission Channeling

l Timepix QUAD→ High position resolutionl Improvement on displacements

and multiple sites determinationl Tpx3 fast count rate will combine

high position resolution with low sample damage

2012-2014FASTVATAGP7PADdetector

22x22=484pads1.4x1.4mm2

>5.5kHz

Slide courtesy of E. Bosne

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Advantages of the Timepix detector in EBSP acquisition

• Sensor separated from the electronics: à Radiation hardnessà Choice of the sensor’s material and thickness

• Direct electron imaging:à Reduced exposure dosesà Reduced beam energies

• Energy discrimination:à Working in noise-free conditionà Energy filtered EBSD pattern

à Improved contrast and sharpness in EBSPs

à increase in the diffraction features of higher order in EBSPs

à Improvement in the depth and lateral resolution

• Compact size Slide courtesy of S. Vespucci

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Energy filtering in EBSD with Timepix

0 10 20 30 40 50 60 70 80

60

80

100

120

140

160

180

Inte

nsity

Pixel

Threshold energy: 4.6 keV 19.4 keV

EBSPs from silicon, Beam energy: 20keV,Beam current: ≈9.5nA, Specimen tilt = 70°Distance specimen-detector: ≈1.5 cmCounted particles: ≈4x1010

Contrast = (Max-Min)/(Min+Max)(a) Threshold energy: 4.6 keV, Contrast: 0.53(b) Threshold energy: 19.4 keV, Contrast: 0.65

c

a Silicon b Silicon

Slid

e co

urte

sy o

f S. V

espu

cci

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Time of Flight Mass Spectrometry

“Enhanced Detection of High-Mass Proteins by Using an Active Pixel Detector”, Shane R Ellis et al, Angewandte Chemie DOI: 10.1002/anie.201305501

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Time of Flight Mass Spectrometry

“Enhanced Detection of High-Mass Proteins by Using an Active Pixel Detector”, Shane R Ellis et al, Angewandte Chemie DOI: 10.1002/anie.201305501

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Timepix at CAST Experiment

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Calibration with very low X-ray energies

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Medipix2/Medipix3 KT License Holders

• Advacam s.r.o. (formerly Widepix)CZ• Amsterdam Scientific Instruments BV, NL• MBI, Christchurch, NZ• PANalytical, Almelo, NL• Quantum Detectors, Didcot, UK• X-ray Imaging Europe GmbH, Freiburg, D• X-Spectrum, Hamburg, D

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Outline





• Summary

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Timepix3Pixel matrix 256 x 256Pixel size 55 x 55 μm2

Technology CMOS 130 nmMeasurement modes • Simultaneous 10 bit TOT and 14 + 4 bit

TOA• 14 + 4 bit TOA only • 10 bit PC and 14 bit integral TOT

Readout type • Data driven• Frame based

(both modes with zero suppression)Dead time (pixel, data driven) >475 ns (pulse processing + packet transfer)Output bandwidth 40 Mbits/s – 5.12 Gbits/sMaximum count rate 0.4 Mhits/mm2/s (data driven mode)TOA Precision * 1.56 ns Front end noise 60e- RMSMinimum threshold ~500 e-

Specifications

* Fast ToA block from V. Gromov et al., Nikhef

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Energy and time measurements with cosmic particles

Integral frame ~ 72h

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Timepix3 Spectrum(Si 55µm/300µm)

3.76 keV FWHM

241Am

E. Frojdh

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Read-out chip

Sensor

Energy and time measurements with cosmic particles

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Cosmic ray in Timepix3 - measurement

Precise arrival time information (1.6ns steps) provides depth of interaction within the sensor layer

E. Frojdh

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Aegis Experiment

Slide courtesy of H. Holmestad, Univ Oslo

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90Sr Source measurements with Timepix3

1 sec acquisistion time300 µm p-n Si sensorDetector Vbias = 30VMeasured rate: ~16.5 Khit/sCluster definition: XY distance of ≤ 50 pixelsTOA spread ≤ 150 ns

Measured cluster rate: ~2.2 Kcluster/s

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First 200 events – event number

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First 200 events - ToT (keV)

0 37.5 75

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First 200 events - ToA (ns)

0 65 130

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First 200 events - ToA (ns)

0 65 1300 65 130

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Selected events: #3 and #17

e- impact point

115ns TOA spreadEvent #17

Event #3 30ns TOA spread

130ns TOA spread

#17 impact point

#3 impact point

ToT: 693 KeV

ToT: 374 KeV

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Difference in Charge collection time vs Vbias

0

10000

20000

30000

40000

50000

60000

70000

80000

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150

Cou

nts

Dt [ns]

cluster tmax-tmin

150V 100V 50V 30V

e- impact point (tmax)

e- (tmin)

1000s acquisition

>1 Mclusters detected

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Total charge in cluster vs Vbias

0

5000

10000

15000

20000

25000

30000

35000

40000

45000

50000

55000

60000

0 50 100 150 200 250 300

Cou

nts

[KeV]

150V 100V

50V 30V

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Outline





• Summary

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The LHCb VELO upgrade

624 VeloPixASICs 26 planes

N07-17: P. Collins: ”The LHCb VELO Upgrade”N12-3: P. Collins: “The Timepix3 Telescope and Sensor Development for the LHCb VELO Upgrade”

• Trigger readout @ 1 MHz• Radial strip detector + Beetle ASIC• During physics data-taking, the silicon

sensors @7 mm

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Data rates per ASIC (Gbps)

Hybrid pixel readout chip:Bonded to a sensor.

VeloPix ASIC module

• Trigger-less readout @ 40MHz• The hottest chips 5.1 mm from the beam• Expected integrated radiation 10 years:

– TID: From 50 to 400 Mrad (non-uniform)– 8.5 x 1015 neq cm-2

• Data per chip: ~15.1 Gbps, 2.9 Tbps for VELO

• The module installation during the CERN Long Shutdown 2 (LS2) 2019/2020.

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From Timepix3 à Velopix

Timepix3 (2013) VeloPix (2016)

Pixel arrangement 256 x 256

Pixel size 55 x 55 µm²

Peak hit rate 80 Mhits/s/ASIC 800 Mhits/s/ASIC50 khits/s/pixel

Readout type Continuous, trigger-less, TOT Continuous, trigger-less, binary

Timing resolution/range 1.5625 ns, 18 bits 25 ns, 9 bits

Total Power consumption <1.5 W < 3 W

Radiation hardness 400 Mrad, SEU tolerant

Sensor type Various, e- and h+ collection Planar silicon, e- collection

Max. data rate 5.12 Gbps 20.48 Gbps

Technology IBM 130 nm CMOS TSMC 130 nm CMOS

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Velopix Chip Architecture

• Pixel matrix:– 256 x 256 pixels– 128 x 64 super pixels (2x4 pixels each)– @40MHz

• Packet-based architecture:– 8 pixels/packet + 9 bit time stamp à

30% reduction in data rate

• Data-driven readout:– 20 Mpackets/s/double column

• 40, 80, 160 and 320 MHz TMR clock domains in the periphery

• 1 to 4 configurable serializers (GWT)

• GBT frame compatible

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VeloPix

14.14 mm

Analog front-end16 x 55 um²

Double column:512 pixels64 super pixels

Full matrix:128 Double columns

~190 Mtransistors

Pixel & SuperpixelLogic (HD Library) 16

.6

mm

Active Periphery

2.4

mm

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VeloPix: General Measurements

ü Measured power consumption (@nominal settings):ü Analog < 480 mWü Digital:

ü Periphery < 380mWü Pixel Matrix <350mW (idle)ü @High rate ~+300mW (simulated)

ü Total= ~1.5W @High rateü Slow and Fast control fully functionalü Pixel Configuration and readout ü On-chip biasing DACs (next slide)ü Internally measured packet latency

(@low rate) ü eCDRPLL (CERN) total jitter @320MHz

<6psrms

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Electronic Noise

0

2000

4000

6000

8000

10000

12000

0 1 2 3 4 5 6 7 8

Coun

ts

DACCode

ENCENC fit

µeq= 4.14 (62.9 e-)*σeq= 0.27 (4.1 e-

rms)*

*@gain of 25mV/ke-

Measured ENC of all pixels• Threshold scan over noise floor• All pixels at code 0xF

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0

1000

2000

3000

4000

5000

6000

7000

8000

1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700

Cou

nts

DAC Code

Threshold=0x0F

Threshold=0x0F fit

Threshold=0x0

Threshold=0x0 fit

Threshold equalized

µ0x0= 1378σ0x0= 27.06

µ0xF= 1513σ0xF= 26.19

µeq= 1446σeq= 2.65 (40.3 e-

rms)*

Threshold Equalization

Unequalised Threshold distribution: • All pixels at code 0x0

*@gain of 25mV/ke-

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Summary of VELOpix measurements

Pixel gain ~24.6 mV/Ke-

Pixel to pixel gain variation ~3.3%

Pixel ENC 62.9 e-

Pixel to pixel threshold mismatch 410 e-rms

Pixel to pixel threshold mismatch calibrated (Threq) 40.3 e-rms

Expected minimum threshold > 450 e-

Threshold equalization only calculated not measured on chipAll measurements assuming Ctest=5fF

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First source measurements

• First single chip assemblies available since last week at CERN

Fe55 600s Thr ~900 e-

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Outline





• Summary

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Tiling larger areas

Single chip assembly

Sensor

ASIC

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Tiling larger areas – present day solution

ASIC

SensorLadder – n x 1

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Tiling larger areas– present day solution

ASIC

ASIC

Ladder – n x 2

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Tiling larger areas - TSVs at periphery

TSVs for IO eliminate wire bonding reducing dead area

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Tiling larger areas - TSVs within pixel matrix

If IO are distributed within the pixel matric TSVs permit seamless tiling

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Tiling larger areas - TSVs within pixel matrix

Permits use of single 4-side buttable tiles

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Through Silicon Via processing of Medipix3/Timepix3

Through Silicon Vias offer the possibility of creating 4-side buttable tiles

3 projects for been undertaken with LETI- Funding mainly from Medipix3 Collaboration, AIDA and LCD group

1) 2011 - Feasibility of TSV processing on Medipix3 (low yield wafers)

2) 2013 - Proof of yield using Medipix3RX wafers (6 wafers)

3) 2014 - TSV processing of ultra-thin Medipix3/Timepix3 wafers (50µm)

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TSV processing on the Medipix3

MEDIPIX3 pixel side native thickness TSV processed chip“BGA” bottom

distribution

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Yield verification of TSV processed wafers

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Yield from 2nd TSV project with LETI

Lot no. uSA999P Lot no. uSB254PP04 P05 P06 P01 P02 P03

% KGD before TSV (on wafer) 57 51 50 50 60 53% KGD after TSV (chips) 45 41 rework 20 41 38

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Photo comparing 50µm and 120µm thick Medipix3RX Chips with TSV Processing

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What’s next?

• A new Collaboration called Medipix4 has been started (4th March 2016)

• Chips to be fully tile-able on 4-sides • 2 chips development are foreseen (65nm CMOS) • Medipix4 Photon counting spectrometric chip

– Will use charge summing and allocation scheme– Multiple thresholds – Pixel pitch varied to match sensor material– Better high count rate performance (aimed at human CT)

• Timepix4– Smaller pixel pitch– Better timing resolution (sub-ns)– Better high count rate performance (TSV)

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Summary and conclusions

• The Medipix developments grew out of R and D on pixel detectors for LHC

• Timepix has been used extensively in particle tracking applications but is limited by the frame-based readout

• Timepix3 provides data driven readout at relatively high rates (40Mhits/cm2/sec)

• The precise ToA measurement provides particle tracking within the semiconductor detector layer and single layer tracking for electrons

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Summary and conclusions

• The VELOpix chip was derived directly from the Timepix3 work and designed by the same team

• First results are consistent with a well operating chip. Measurements are on-going

• The Medipix4 Collaboration has been formed and will explore 4 side tile-able readout of hybrid pixel detectors for the first time

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Thank you for your attention!

Medipix3RX images: S. Procz et al.

charged particle detection using the timepix and … · charged particle detection using the...

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