charge transfer properties through graphene layers (production & qa of graphene samples) p....
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Charge Transfer Properties Through Graphene Layers
(Production & QA of Graphene Samples)
P. Thuiner1,2, R. Hall-Wilton3, R. B. Jackman4, H. Müller1, T. T. Nguyen4, R. de Oliveira1, E. Oliveri1, D. Pfeiffer1,3, F. Resnati1,
L. Ropelewski1, J. A. Smith4, M. van Stenis1, R. Veenhof5
1CERN, 2Technische Universität Wien, 3ESS, 4University College London, 5Uludağ University
Patrik Thuiner et al. 2GDD Meeting – 2015/02/18
• Goal: create a device fully transparent to electrons and fully opaque to ions
• Graphene is narrowest and thinnest possible conductive mesh with pore size < 1 Å
• Study of charge transfer through graphene layers suspended on Cu meshes or GEM electrodes(hole diameter ≥ 30 µm!)
Patrik Thuiner et al. 3IEEE 2014 NSS/MIC – 2014/11/13
Graphene Transfer
Acetone
Nitric Acid
1. Find “good” side of copper foil2. Etch away “bad” layer in
nitric acid3. Spin-coat with PMMA4. Etch away copper foil with
Fe 3 nitrate5. PMMA with graphene layer on
bottom floating on Fe 3 nitrate6. First step of cleaning with
demineralized water7. Second step of cleaning with
demineralized water8. PMMA with graphene on
bottom scooped out with mesh/GEM
9. PMMA dissolved with acetone in Critical Point Dryer
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7
?
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Iron 3 Nitrate Iron 3 Nitrate Demineralized Water
Demineralized Water
Demineralized Water
Patrik Thuiner et al. 4GDD Meeting – 2015/02/25
Charge Transfer Measurements
Tnpnp
np
0 200 400 600 800 1000 12000
500
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ADC channels
Coun
ts
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ADC channels
Coun
ts
0 200 400 600 800 1000 12000
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ADC channels
Coun
ts
P2P1ED1
Telectron = P1/P2
Pre-AmpPre-Amp
A
Ions
AIons
AElectrons 𝑇 𝑖𝑜𝑛=𝐼 h𝑐𝑎𝑡
𝐼 h𝑐𝑎𝑡 +𝐼 h𝑚𝑒𝑠
Patrik Thuiner et al. 5
• Setup (gas detectors)– Need for conductive support structure– Free-standing graphene membranes of
hole diameter ≥ 30 µm – Beam size: order of mm²
• Production/Transfer– Contamination– Layer integrity
• Qualitiy assurance– Contaminations: SEM– Homogeneity, defects: Raman spectroscopy
GDD Meeting – 2015/02/25
Challenges
D peak2D peak
G peak
Patrik Thuiner et al. 10IEEE 2014 NSS/MIC – 2014/11/13
Mesh Production
Nitric Acid
120°C
1. Find “good” side2. Etch away “bad” layer in
¼ nitric acid 68% for 4 min3. Spin-coat with HIPR6512
photoresist and cure for one hour at 120°C
4. Flip good side to bottom5. Laminate top side with
FX930 photoresist6. Put hole mask onto
photoresist7. Irradiate with UV light8. Develop negative
photoresist (removed at hole positions)
9. Apply ferric perchloride to top side
UV light Ferric Perchloride
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4 5 6
7
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Patrik Thuiner et al. 11IEEE 2014 NSS/MIC – 2014/11/13
Mesh Production
Ethanol
Acetone
1. Ship samples to UCL2. Dissolve FX930
photoresist in Ethanol
3. HIPR6512 photoresist still protects graphene layer
4. Dissolve HIPR6512 photoresist with acetone in Critical Point Dryer
5. Graphene membrane on copper mesh
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4 5