chapter1 fundamentals of microwave engineering

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

MICROWAVE INTERGRATED CIRCUITS

1

Huynh Phu Minh Cuong, PhD [email protected]

Department of Telecommunications

Faculty of Electrical and Electronics Engineering

Ho Chi Minh city University of Technology

Dr. Cuong HuynhTelecommunications DepartmentHCMUT 2

Instructor: Cuong Huynh (PhD)

Office: 112 B3 , HCMUT

Office Hours: Friday 2:00-4:00 PM

E-mail: [email protected]

Textbook:

[1] David M. Pozar, Microwave Engineering, John Wiley & Sons, Inc, 4th ed.,

2012.

References:

[2] Gonzalez, Microwave Transistor Amplifiers, Prentice Hall, 2nd ed. 1997

[3] I.D. Robertson, S. Lucyszyn, RFIC and MMIC Design and Technology, The

Institution of Electrical Engineers, London, 2001

[4] V nh Thnh, Mch Siu Cao Tn, NXB HQG, 2006

[5] V nh Thnh, K Thut Siu Cao Tn, NXB HQG, 2004.



Learning outcomes Understand effects of noise and nonlinearity distortion on microwave systems and system parameters such as noise figure, input/output referred

noise, 1-dB compression point and third-order intercept point.

Analyze various microwave transceiver architectures and design system parameters for microwave transceivers.

Analyze, design, fabricate and measure microwave passive components such as power divider/combiner, directional coupler, hybrid coupler, circulator

and T/R switch.

Analyze, design, fabricate and measure microwave filters using distributed elements.

Analyze, design, fabricate and measure microwave amplifiers including low noise amplifier, broadband amplifier and power amplifier.

Analyze, design, fabricate and measure microwave mixers and oscillators. Use microwave simulation soft-wares such as ADS, Cadence and SDH, and equipments such as network analyzer, spectrum analyzer, synthesizer and noise

figure analyzer.



Grading

Homework 20% You are encouraged to work together with your classmates on the homework. HW can be turned in via Email.

No late homework will be graded

Final Project 30% Report and PowerPoint presentation are required

Final Exams 50% Closed book One single-sided A4 of notes is allowed



Outline

Chapter 1: Fundamentals of Microwave Engineering

Chapter 2: System Parameters and Transceiver

Architectures

Chapter 3: Power Dividers and Directional Couplers

Chapter 4: Microwave Amplifier

Chapter 5: Oscillators and Mixers

Chapter 6: Microwave Filters



Huynh Phu Minh Cuong [email protected]

Department of Telecommunications

Faculty of Electrical and Electronics Engineering

Ho Chi Minh city University of Technology

Chapter 1

Fundamentals of Microwave Engineering



Introduction

and emerging applications !

Integrated Circuits (IC)

Is the key driver behind the scene !


Introduction


1.1 Fundamentals of microwave engineering

Transmission lines

. .( ) . .x xV x V e V e

0

1 ( )( )

1 ( )

xZ x Z

x

2( ) ( ). dx l e

0

0

( ) L

L

Z Zl

Z Z

00

0

. . ( )( )

. . ( )

L

L

Z j R tg dZ x R

R j Z tg d

. .

0 0

( ) l lV V

I l e eZ Z

1

1S VSWR



Smith chart



Impedance Matching

Using lump elements

Using transmission line

ADS Smith chart tool



Scattering Parameters

At microwave regime: S-parameters

matrix, defined in terms of traveling

waves, is used instead.

The scattering matrix represents the

relation between the voltage incident

waves on the ports to voltage reflected

wave from the ports.

S-parameters are measured with

matched loads rather than open- or

short-circuits.

At microwave frequencies, matched

loads are relatively easy to realize.

S-parameters are measured using

Vector Network Analyzer (VNA).


S-Parametter Definition

V+n is the incident voltage wave on port n

V n is the reflected voltage wave from port n.

The scattering matrix, or [S] matrix, is defined in relation to these incident

and reflected voltage waves.


S-Parametter Definition


Example: Find [S]


1.2 Technology and device for microwave integrated circuits

Target: smaller size, lighter weight, lower power requirements, lower cost,

and increased complexity.

Microwave integrated circuits (MICs) Technology replace bulky and

expensive waveguide and coaxial components with small and inexpensive planar

components.

MIC technology has advanced to the point where complete microwave

subsystems, such as receiver front ends and radar transmit/receive modules, can be

integrated on a chip that is only a few square millimeters in size.

Hybrid MICs

MIC

MMIC/RFIC Hybrid Microwave Integrated Circuits

Monolithic Microwave Integrated Circuits

Radio Frequency Integrated Circuits



Hybrid MICs MMIC/RFIC


The metaloxidesemiconductor field-effect transistor (MOSFET) was first patented

by Julius Edgar Lilienfeld in 1925, well before

the invention of BJT.

Due to the fabrication limitation, MOSFET has not been used until the early years of 1960s.

CMOS (Complementary MOS p- and n-type device) was patented by Frank Wanlass in 1967,

initiating a revolution in the semiconductor

industry.

CMOS initially dominates in the digital circuit/systems while others for analog.

Why CMOS now ? Low cost, high integration

and solution for SOC.


Technology CMOS



CMOS Technology

CMOS Transistors Interconnect Diodes Resistors Capacitors Inductors Bipolar Transistors



CMOS Technology Intel 45 nm CMOS Process



Microwave Devices

DIODES BIPOLAR JUNCTION TRANSISTORS FIELD EFFECT TRANSISTORS Capacitor Inductor


Microwave devices



NMOS Transistor



PMOS Transistor



Interconnect



Diode



Resistor



Capacitor



Inductor



Circuit Simulator: ADS, Cadence EM simulator: Momentum, HFSS,IE3D, CST, SONET

1.3 Microwave simulation tools

chapter1 fundamentals of microwave engineering

Documents

microwave systems

microwave transceivers

microwave amplifier

measure microwave filters

measure microwave amplifiers

measure microwave mixers

huynh phu minh cuong

cuong huynh phd office