chapter 3 manufacturing wafers 半導體製程 材料科學與工程研究所 張翼 教授
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Chapter 3Manufacturing Wafers
半導體製程材料科學與工程研究所張翼 教授
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Figure 3.1 Hydrogen reduction of trichlorosilane.
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Figure 3.2 Unit cell of silicon.
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Figure 3.3 GaAs crystal structure.
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Figure 3.4 Poly- and single-crystal structures.
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Figure 3.5 Crystal planes.
<111> are most widely used planes for Si.
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Figure 3.6 Wafer orientation indicators.
Si<100> MOS devices<111> Bipolar devices GaAs<100>
EPD: Etch Pit Density
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Figure 3.7 Czochralski crystal-growing system.
Seed and crucible are rotated in the opposite direction.
Crucible (silica) CZ, LEC, FC: Three popular m
ethods for growing wafers CZ is the most widely used m
ethod for Si Can also be N or P-type dope
d
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Figure 3.8 Crystal growth from a seed.
Heated to 1415℃ → Take 3 days to grow a crystal (12 inches are available now)
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Figure 3.8
→ surface tension
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Figure 3.9 LEC system of crystal growth.
Widely used for GaAs wafer Need B2O3 to prevent As evap
oration
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Figure 3.10 Float-zone crystal-growing system.
Low oxygen content Smaller diameter Higher dislocation density Used for Thyristors and Recti
fiers
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Figure 3.11 Comparison of CZ and float crystal-growing methods.
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Figure 3.12 Vacancy crystal defect.
Point defect Dislocations Growth defects: slip line
twin
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Figure 3.13 Crystal slip.
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Figure 3.14 Crystal diameter grinding.
Wafer were grown a few degrees off orientation for ion implantation or epi-growth
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Figure 3.15 Crystal orientation determination.
ORIENTATION DETERMINATION
: X-ray diffraction Light reflection
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Figure 3.16 Crystal flat grinding.
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Figure 3.17 Wafer flat locations.
Four point probe determine resistivity→doping conc.
Hot point probe with polarity meter to detective polarity
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Figure 3.18 Inside-diameter saw wafer slicing.
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Figure 3.19 Laser dot coding (Reprinted from the Jan. 1998 edition of Solid State Technology, Copyright 1998 by PennWell Publishing Company.)
Coding
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Figure 3.20 Cross section of MOS transistor.
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Figure 3.21 Abrasive and chemical-mechanical surface polishing.
abrasion slurry lapping: remove surface damage from dicing
CMP: slurry of silica with mild etchant
(potassium/ammonium hydroxide)
Alkaline slurry grow oxides and then mechanically removed.
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Figure 3.21
rough polishing
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Figure 3.21
CMP polishing
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Figure 3.22 Trapping.
Formed by sand blasting Backside damage → dislocat
ion → trap of mobile ionic contamination (Gettering)
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Figure 3.23 Wafer edge grinding.
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Figure 3.24 Typical 200-mm wafer specification.