ch5. cmos performance factors
DESCRIPTION
Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning. Ch5. CMOS Performance Factors. Ch5.1 Basic CMOS Circuit Elements. CMOS Inverters. CMOS Inverter Transfer Curve. CMOS Inverter Transfer Curve. CMOS Inverter Noise Margin. CMOS Inverter Noise Margin. - PowerPoint PPT PresentationTRANSCRIPT
Advance Nano Device Lab. 1
Fundamentals of Modern VLSI Devices 2nd EditionYuan Taur and Tak H.Ning
Ch5. CMOS Performance Factors
Advance Nano Device Lab. 2
Ch5.1 Basic CMOS Circuit Elements
Advance Nano Device Lab. 3
Advance Nano Device Lab. 4
CMOS Inverters
Advance Nano Device Lab. 5
CMOS Inverter Transfer Curve
Advance Nano Device Lab. 6
CMOS Inverter Transfer Curve
(5.1)
Advance Nano Device Lab. 7
CMOS Inverter Noise Margin
(5.2)
Advance Nano Device Lab. 8
CMOS Inverter Noise Margin
Advance Nano Device Lab. 9
CMOS Inverter Noise Margin
Advance Nano Device Lab. 10
CMOS Inverter Switching Characteristics
(5.3)
Advance Nano Device Lab. 11
CMOS Inverter Switching Characteristics
(5.4) (5.5)
Advance Nano Device Lab. 12
Switching Energy and Power Dissipation
(5.6)
Advance Nano Device Lab. 13
Quasistatic Assumption
(5.7)
(5.8)
Advance Nano Device Lab. 14
CMOS NAND and NOR Gates
Advance Nano Device Lab. 15
Two-Input CMOS NAND Gate
Advance Nano Device Lab. 16
Two-Input CMOS NAND Gate
Advance Nano Device Lab. 17
Noise Margin of NAND Circuits
Advance Nano Device Lab. 18
Layout of a Single Device
Advance Nano Device Lab. 19
Layout of a CMOS Inverter
Advance Nano Device Lab. 20
Layout of a Two-Input CMOS NAND
Advance Nano Device Lab. 21
Ch5.2 Parasitic Elements
Advance Nano Device Lab. 22
Source-Drain Resistance
Advance Nano Device Lab. 23
Accumulation-Layer Resistance and Spreading Resistance
(5.9)
Advance Nano Device Lab. 24
Sheet Resistance
(5.10)
Advance Nano Device Lab. 25
Contact Resistance
(5.11)
(5.12)
(5.13)
(5.14)
Advance Nano Device Lab. 26
Resistance in a Self-Aligned Silicide Technology
Advance Nano Device Lab. 27
Parasitic Capacitances
Advance Nano Device Lab. 28
Junction Capacitance
(5.15)
(5.16)
Advance Nano Device Lab. 29
Overlap Capacitance
(5.17)
Advance Nano Device Lab. 30
Overlap Capacitance
(5.18)
(5.20)
(5.19)
Advance Nano Device Lab. 31
Gate Resistance
(5.21) (5.22)
Advance Nano Device Lab. 32
Gate Resistance
(5.23)
(5.24)
(5.25)
Advance Nano Device Lab. 33
Gate Resistance
(5.26)
(5.27)
Advance Nano Device Lab. 34
Gate Resistance
(5.28)
(5.29)
Advance Nano Device Lab. 35
Interconnect R and C
Advance Nano Device Lab. 36
Interconnect R and C
Advance Nano Device Lab. 37
Interconnect R and C
(5.30)
Advance Nano Device Lab. 38
Interconnect Scaling
Advance Nano Device Lab. 39
Interconnect Scaling
Advance Nano Device Lab. 40
Interconnect Resistance
(5.31)
(5.32)
(5.33)
Advance Nano Device Lab. 41
RC Delay of Global Interconnects
Advance Nano Device Lab. 42
RC Delay of Global Interconnects
Advance Nano Device Lab. 43
Ch5.3 Sensitivity of CMOS Delay to Device Parameters
Advance Nano Device Lab. 44
Propagation Delay of a CMOS Inverter Chain
Advance Nano Device Lab. 45
Propagation Delay of a CMOS Inverter Chain
(5.34)
(5.35)
Advance Nano Device Lab. 46
Propagation Delay of a CMOS Inverter Chain
Advance Nano Device Lab. 47
Bias-Point Trajectories in a Switching Event
Advance Nano Device Lab. 48
Bias-Point Trajectories in a Switching Event
(5.36)
(5.37)
(5.38)
Advance Nano Device Lab. 49
Delay Equation: Switching Resistance, Input and Output Capacitance
(5.39)
(5.40)
Advance Nano Device Lab. 50
Delay Equation: Switching Resistance, Input and Output Capacitance
(5.41)
(5.42)
Advance Nano Device Lab. 51
CMOS Delay Sensitivity to pMOSFET/nMOSFETwidth ratio
Advance Nano Device Lab. 52
Device Width Effect with Respect to Load Capacitance
(5.43)
(5.44)
(5.45)
Advance Nano Device Lab. 53
Sensitivity of Delay to Channel Length
Advance Nano Device Lab. 54
Sensitivity of Delay to Gate Oxide Thickness
Advance Nano Device Lab. 55
Sensitivity of Delay to Power-Supply Voltage and Thresh-old Voltage
Advance Nano Device Lab. 56
Power and Delay Tradeoff
(5.46)
Advance Nano Device Lab. 57
Sensitivity of Delay to Series Resistance
Advance Nano Device Lab. 58
Sensitivity of Delay to Overlap Capacitance
Advance Nano Device Lab. 59
Miller Effect
(5.47)
(5.48)
(5.49)
Advance Nano Device Lab. 60
Sensitivity of Delay to Junction Capacitance
Advance Nano Device Lab. 61
Sensitivity of Delay to Junction Capacitance
Advance Nano Device Lab. 62
Top and Bottom Switching of a Two-Way NAND Gate
Advance Nano Device Lab. 63
Top and Bottom Switching of a Two-Way NAND Gate
(5.50)
Advance Nano Device Lab. 64
Ch5.4 Performance Factors of Advanced CMOS Devices
Advance Nano Device Lab. 65
Small-Signal Equivalent Circuit
(5.51)
Advance Nano Device Lab. 66
Small-Signal Equivalent Circuit
Advance Nano Device Lab. 67
Unity-Current-Gain Frequency of an Intrinsic MOSFET
(5.52)
(5.53)
(5.54)
Advance Nano Device Lab. 68
Unity-Current-Gain Frequency of an Intrinsic MOSFET
(5.55)
(5.56)
(5.57)
Advance Nano Device Lab. 69
Effect of Transport Parameters on CMOS Performance
(5.58)
(5.59)
Advance Nano Device Lab. 70
Low-Temperature CMOS
Advance Nano Device Lab. 71
Low-Temperature CMOS