ccd area image sensor - hamamatsu photonics · s703*-1007 - 3000 - horizontal shift register...
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CCD area image sensor
Back-thinned FFT-CCD
S7030/S7031 series
www.hamamatsu.com 1
The S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes the S7030/S7031 series suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. The S7030/S7031 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range.The S7030/S7031 series has an effective pixel size of 24 × 24 μm and is available in image areas ranging from 12.288 (H) × 1.392 (V) mm2 (512 × 58 pixels) up to a large image area of 24.576 (H) × 2.928 (V) mm2 (1024 × 250 pixels).
Features Applications
Non-cooled type: S7030 seriesOne-stage TE-cooled type: S7031 seriesPixel size: 24 × 24 μm
Line, pixel binning
Wide spectral response range
Low readout noise
Wide dynamic range
MPP operation
High UV sensitivity with good stability
Greater than 90% quantum efficiency at peak sensitivity wavelength
Fluorescence spectrometer, ICP
Industrial inspection
Semiconductor inspection
DNA sequencer
Low-light-level detection
Raman spectrometer
Selection guide
Type no. Cooling Number of total pixels Number of effective pixels
Image size[mm (H) × mm (V)]
Suitable multichannel detector head
S7030-0906
Non-cooled
532 × 64 512 × 58 12.288 × 1.392
C7040S7030-0907 532 × 128 512 × 122 12.288 × 2.928S7030-1006 1044 × 64 1024 × 58 24.576 × 1.392S7030-1007 1044 × 128 1024 × 122 24.576 × 2.928S7031-0906S
One-stageTE-cooled
532 × 64 512 × 58 12.288 × 1.392
C7041S7031-0907S 532 × 128 512 × 122 12.288 × 2.928S7031-1006S 1044 × 64 1024 × 58 24.576 × 1.392S7031-1007S 1044 × 128 1024 × 122 24.576 × 2.928
Note: Two-stage TE-cooled type (S7032-1006/-1007) is available upon request (made-to-order product).
CCD area image sensor S7030/S7031 series
2
Structure
Absolute maximum ratings (Ta=25 °C)
Operating conditions (MPP mode, Ta=25 °C)
Parameter S7030 series S7031 seriesPixel size (H × V) 24 × 24 µmVertical clock phase 2 phasesHorizontal clock phase 2 phasesOutput circuit One-stage MOSFET source followerPackage 24-pin ceramic DIP (refer to dimensional outlines)Window*1 Quartz glass*2 AR-coated sapphire*3
*1: Temporary window type (ex. S7030-0906N) is available upon request.(Temporary window is fixed by tape to protect the CCD chip and wire bonding.)
*2: Resing sealing *3: Hermetic sealing
Parameter Symbol Min. Typ. Max. UnitOperating temperature*4 Topr -50 - +50 °CStorage temperature Tstg -50 - +70 °COutput transistor drain voltage VOD -0.5 - +25 VReset drain voltage VRD -0.5 - +18 VVertical input source voltage VISV -0.5 - +18 VHorizontal input source voltage VISH -0.5 - +18 VVertical input gate voltage VIG1V, VIG2V -10 - +15 VHorizontal input gate voltage VIG1H, VIG2H -10 - +15 VSumming gate voltage VSG -10 - +15 VOutput gate voltage VOG -10 - +15 VReset gate voltage VRG -10 - +15 VTransfer gate voltage VTG -10 - +15 VVertical shift register clock voltage VP1V, VP2V -10 - +15 VHorizontal shift register clock voltage VP1H, VP2H -10 - +15 VNote: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.*4: Package temperature (S7030 series), chip temperature (S7031 series)
Parameter Symbol Min. Typ. Max. UnitOutput transistor drain voltage VOD 18 20 22 VReset drain voltage VRD 11.5 12 12.5 VOutput gate voltage VOG 1 3 5 VSubstrate voltage VSS - 0 - V
Test point
vertical input source VISV - VRD - Vhorizontal input source VISH - VRD - Vvertical input gate VIG1V, VIG2V -9 -8 - Vhorizontal input gate VIG1H, VIG2H -9 -8 - V
Vertical shift registerclock voltage
High VP1VH, VP2VH 4 6 8V
Low VP1VL, VP2VL -9 -8 -7Horizontal shift registerclock voltage
High VP1HH, VP2HH 4 6 8V
Low VP1HL, VP2HL -9 -8 -7
Summing gate voltageHigh VSGH 4 6 8
VLow VSGL -9 -8 -7
Reset gate voltageHigh VRGH 4 6 8
VLow VRGL -9 -8 -7
Transfer gate voltageHigh VTGH 4 6 8
VLow VTGL -9 -8 -7
External load resistance RL 20 22 24 kW
CCD area image sensor S7030/S7031 series
3
Electrical characteristics (Ta=25 °C)
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Min. Typ. Max. UnitSignal output frequency fc - 0.25 1 MHz
Vertical shift register capacitance
S703*-0906CP1V, CP2V
- 750 -pFS703*-0907/-1006 - 1500 -
S703*-1007 - 3000 -Horizontal shift register capacitance
S703*-0906/-0907CP1H, CP2H -
110- pF
S703*-1006/-1007 180Summing gate capacitance CSG - 30 - pFReset gate capacitance CRG - 30 - pF
Transfer gate capacitanceS703*-0906/-0907
CTG -55
- pFS703*-1006/-1007 75
Charge transfer efficiency*5 CTE 0.99995 0.99999 - -DC output level*6 Vout 14 16 18 VOutput impedance*6 Zo - 3 4 kWPower consumption*6 *7 P - 13 14 mW*5: Charge transfer efficiency per pixel, measured at half of the full well capacity*6: The values depend on the load resistance. (Typical, VOD=20 V, Load resistance=22 kW)*7: Power consumption of the on-chip amplifier plus load resistance
Parameter Symbol Min. Typ. Max. UnitSaturation output voltage Vsat - Fw × CE - V
Full well capacityVertical
Fw240 320 -
ke-Horizontal*8 800 1000 -
Conversion efficiency CE 1.8 2.2 - µV/e-
Dark current*9
(MPP mode)25 °C
DS- 100 1000
e-/pixel/s0 °C - 10 100
Readout noise*10 Nread - 8 16 e- rms
Dynamic range*11 Line binningDrange
100000 125000 - -Area scanning 30000 40000 - -
Photoresponse nonuniformity*12 PRNU - ±3 ±10 %Spectral response range λ - 200 to 1100 - nm
BlemishPoint defect*13 White spots
-
- - 0 -Black spots - - 10 -
Cluster defect*14 - - 3 -Column defect*15 - - 0 -
*8: The linearity is ±1.5%.*9: Dark current nearly doubles for every 5 to 7 °C increase in temperature.*10: Measured with a HAMAMATSU C4880 digital CCD camera with a CDS circuit (sensor temperature: -40 °C, operating frequency:
150 kHz)*11: Dynamic range = Full well capacity / Readout noise*12: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
*13: White spotsPixels whose dark current is higher than 1 ke- after one-second integration at 0 °C.Black spotsPixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the saturation charge)
*14: 2 to 9 contiguous defective pixels*15: 10 or more contiguous defective pixels
Fixed pattern noise (peak to peak)
Signal× 100 [%]Photo Response Non-Uniformity (PRNU) =
CCD area image sensor S7030/S7031 series
4
Spectral response (without window)*16
Dark current vs. temperatureSpectral transmittance characteristics
KMPDB0058EB
*16: Spectral response with quartz glass or AR-coated sapphire is decreased according to the spectral transmittance characteristic of window material.
Qua
ntum
eff
icie
ncy
(%)
Wavelength (nm)
(Typ. Ta=25 °C)
0200 400 600 800 1000 1200
10
20
30
40
50
60
70
80
90
100
Spectral response (S7030/S7031 series, S7033/S7034 series)
KMPDB0058EB
Front-illuminated CCD
Front-illuminated CCD(UV coated)
Back-thinned CCD
0
10
100 200
Wavelength (nm)
Tran
smitt
ance
(%
)
300 400 500 600 700 800 900 1000 1100 1200
KMPDB0110EA
Spectral transmittance characteristics (S7030-01/S7031-01 series, S7170/S7171-0909, S7986-01, S7987-01, S7988, S10140/S10141 series, S9037/S9038 series,S10140-01/S10141-01 series)
20
30
40
50
60
70
80
90
100(Typ. Ta=25 °C)
Quartz window
AR coated sapphire
-50 -40 -30 -20 0-10 10 20 30
Temperature (°C)
0.01
1
0.1
10
100
1000
Dar
k cu
rren
t (e
- /pi
xel/s
)
KMPDB0256EA
Dark current vs. temperature (S7030/S7031 series)
(Typ.)
KMPDB0110EAKMPDB0256EA
CCD area image sensor S7030/S7031 series
5
KMPDC0016ED
Device structure (conceptual drawing of top view)
2322 21 20 1415
24
1
2
12
11
8 93 4 52-
beve
l
si
gnal
out
2n
4 blank pixels 4 blank pixels
V=58, 122H=512, 1024
4-be
vel
Thinning
Effective pixels
Effective pixels
Horizontal shift register
Horizontal shift register
Thin
ning
1 2 3 4 52345
V
H
6-bevel 6-bevel
2 n signal out
13
10
Device structure (S7030/S7031 series)
KMPDC0016ED
Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed.
CCD area image sensor S7030/S7031 series
6
Line binning
Timing chart
Parameter Symbol Min. Typ. Max. Unit
P1V, P2V, TG*17 Pulse widthS703*-0906
Tpwv1.5 2 -
µsS703*-0907/-1006 3 4 -S703*-1007 6 8 -
Rise and fall time Tprv, Tpfv 10 - - ns
P1H, P2H*17Pulse width Tpwh 500 2000 - nsRise and fall time Tprh, Tpfh 10 - - nsDuty ratio - - 50 - %
SGPulse width Tpws 500 2000 - nsRise and fall time Tprs, Tpfs 10 - - nsDuty ratio - - 50 - %
RGPulse width Tpwr 100 - - nsRise and fall time Tprr, Tpfr 5 - - ns
TG – P1H Overlap time Tovr 3 - - µs*17: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
Timing chart: line binning (S7030/S7031 series)
KMPDC0017ED
Integration period(shutter must be open)
Vertical binning period(shutter must be closed)
P1V
P2V, TG
P1H
P2H, SG
Readout period (shutter must be closed)3.. 623..126
63127
64←128←
58 + 6 (bevel): S703*-0906/-1006122 + 6 (bevel): S703*-0907/-1007
Tpwv
Tovr
Tpwh, Tpws
Tpwr
1 2 3
5311043
5321044
: S703*-0906/-0907: S703*-1006/-1007
4..5304..1042
1 2
D19D2..D10,D1 D20D20D2..D10, S1..S1024, D11..D19D1
RG
OS
S1..S512, D11.. : S703*-0906/-0907: S703*-1006/-1007
KMPDC0017ED
CCD area image sensor S7030/S7031 series
7
Area scanning: large full well modeTiming chart: area scanning (S7030/S7031 series)
KMPDC0127EC
Integration period(shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
Readout period (shutter must be closed)
Enlarged view
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20D5..D10, S1..S1024, D11..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
1 2 3
S1..S512 : S703*-0906/-0907: S703*-1006/-1007
4.. 634..127
64← 58 + 6 (bevel): S703*-0906/-1006128←122 + 6 (bevel): S703*-0907/-1007
Parameter Symbol Min. Typ. Max. Unit
P1V, P2V, TG*18 Pulse widthS703*-0906
Tpwv1.5 2 -
µsS703*-0907/-1006 3 4 -S703*-1007 6 8 -
Rise and fall time Tprv, Tpfv 10 - - ns
P1H, P2H*18Pulse width Tpwh 500 2000 - nsRise and fall time Tprh, Tpfh 10 - - nsDuty ratio - - 50 - %
SGPulse width Tpws 500 2000 - nsRise and fall time Tprs, Tpfs 10 - - nsDuty ratio - - 50 - %
RGPulse width Tpwr 100 - - nsRise and fall time Tprr, Tpfr 5 - - ns
TG – P1H Overlap time Tovr 3 - - µs*18: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
KMPDC0127EC
CCD area image sensor S7030/S7031 series
8
Dimensional outline (unit: mm)
S7030-0906/-0907 S7030-1006/-1007
4.4
± 0.
44
4.8
± 0.
49
2.35 ±
0.15
3.75 ±
0.44
Photosensitive surface1st pin indication pad
3.0
(24 ×) 0.5 ± 0.05
Window 16.3*
8.2*
34.0 ± 0.34
2.54 ± 0.1322
.9 ±
0.3
0
22.4
± 0
.30
A
Photosensitive area12.29
24
1 12
13
Dimensional outline (S7030-0906/-0907, unit: mm)
KMPDA0046EF
S7030-0906: A=1.392S7030-0907: A=2.928
* Size of window that guarantees the transmittance in the“Spectral transmittance characteristics” graph
3.0
Photosensitive surface
4.4
± 0
.44
2.35
± 0
.15
4.8
± 0
.49
3.75
± 0
.44
Window 28.6*
22.9
± 0
.30
22.4
± 0
.30
Photosensitive area 24.58
A8.2*
44.0 ± 0.44
2.54 ± 0.13
1st pin indication pad
Dimensional outline (S7030-1006/-1007/, unit: mm)
KMPDA0047EG
S7030-1006: A=1.392S7030-1007: A=2.928
* Size of window that guarantees the transmittance in the“Spectral transmittance characteristics” graph
(24 ×) 0.5 ± 0.05
24
1 12
13
KMPDA0046EFKMPDA0047EG
S7031-0906S/-0907S
Window 16.3*
8.2*
34.0 ± 0.34
50.0 ± 0.30
2.54 ± 0.13
22.9
± 0
.30
19.0
4.0
42.0
22.4
± 0
.30
A
6.92
± 0
.63
1.0
7.7
± 0
.68
6.32
± 0
.63
4.89
± 0
.15
Photosensitive area12.29
Photosensitive surface1st pin indication pad
3.0
Dimensional outline (S7031-0906S/-0907S, unit: mm)
KMPDA0048EH
TE-cooler
S7031-0906S: A=1.392S7031-0907S: A=2.928
* Size of window that guarantees the transmittance in the“Spectral transmittance characteristics” graph
(24 ×) 0.5 ± 0.05
1
24 13
12
KMPDA0048EH
CCD area image sensor S7030/S7031 series
9
Pin connections
Pin no.
S7030 series S7031 series Remark(standard operation)Symbol Function Symbol Function
1 RD Reset drain RD Reset drain +12 V2 OS Output transistor source OS Output transistor source RL=22 kW3 OD Output transistor drain OD Output transistor drain +20 V4 OG Output gate OG Output gate +3 V5 SG Summing gate SG Summing gate Same pulse as P2H6 - -7 - -8 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-29 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-110 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) -8 V11 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) -8 V12 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Connect to RD13 TG*19 Transfer gate TG*19 Transfer gate Same pulse as P2V14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-215 P1V CCD vertical register clock-1 P1V CCD vertical register clock-116 - Th1 Thermistor17 - Th2 Thermistor18 - P- TE-cooler-19 - P+ TE-cooler+20 SS Substrate (GND) SS Substrate (GND) GND21 ISV Test point (vertical input source) ISV Test point (vertical input source) Connect to RD22 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) -8 V23 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) -8 V24 RG Reset gate RG Reset gate
*19: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V.
S7031-1006S/-1007S
(24 ×) 0.5 ± 0.05
6.92
± 0
.63
1.03.
0
6.32
± 0
.63
4.89
± 0
.15
Photosensitive surface
7.7
± 0
.68
1st pin indication pad
A
4.0
19.0
22.4
± 0
.30
22.9
± 0
.30
44.0 ± 0.44
52.0
60.0 ± 0.30
2.54 ± 0.13
Window 28.6*
Photosensitive area 24.58
8.2*
Dimensional outline (S7031-1006S/-1007S, unit: mm)
KMPDA0049EI
S7031-1006S: A=1.392S7031-1007S: A=2.928
TE-cooler
* Size of window that guarantees the transmittance in the“Spectral transmittance characteristics” graph
1 12
1324
KMPDA0049EI
CCD area image sensor S7030/S7031 series
10
KMPDB0179EA
KMPDB0111EB
S7031-0906S/-0907S S7031-1006S/-1007S
Voltage/CCD temperature vs. current(S7015-0908, S7031-0906S/-0907S, S7034-0907S, S10141-1007S/-1008S/-1009S)
KMPDB0178EA
0
1
2
3
Volta
ge (
V)
CCD
tem
pera
ture
(°C
)
4
7
6
5
-40
-30
2.01.51.0
Current (A)
0.50
-20
-10
0
10
20
30(Typ. Ta=25 °C)
Voltage vs. currentCCD temperature vs. current
Voltage/CCD temperature vs. current(S7015-1008, S7031-1006S/-1008S, S7034-1007S, S10141-1107S/-1108S/-1109S)
KMPDB0179EA
0
1
2
3
Volta
ge (
V)
CCD
tem
pera
ture
(°C
)
4
7
6
5
-40
-30
432
Current (A)
10
-20
-10
0
10
20
30(Typ. Ta=25 °C)
Voltage vs. currentCCD temperature vs. current
Specifications of built-in temperature sensorA thermistor chip is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation.
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2) RT1: Resistance at absolute temperature T1 [K] RT2: Resistance at absolute temperature T2 [K] BT1/T2: B constant [K]
The characteristics of the thermistor used are as follows. R298=10 kW B298/323=3450 K
KMPDB0178EA
Resistance vs. temperature (S7960/S7961-1008, S7986-01, S7987-01, S7171-0909, S7010/S7011/S7015 series, S7030/S7031/S7033/S7034 series, S9970/S9971/S9972/S9973 series, S10140/S10141 series)
KMPDB0111EB
10 kΩ220 240 260
Temperature (K)
Resi
stan
ce
280 300
100 kΩ
1 MΩ
Specifications of built-in TE-cooler (Typ. vacuum condition)Parameter Symbol Condition S7031-0906S/-0907S S7031-1006S/-1007S Unit
Internal resistance Rint Ta=25 °C 2.5 1.2 WMaximum current*20 Imax Tc*21=Th*22=25 °C 1.5 3.0 AMaximum voltage Vmax Tc*21=Th*22=25 °C 3.8 3.6 VMaximum heat absorption*23 Qmax 3.4 5.1 WMaximum temperature of heat radiating side - 70 70 °C
*20: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60% of this maximum current.
*21: Temperature of the cooling side of thermoelectric cooler*22: Temperature of the heat radiating side of thermoelectric cooler*23: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum
current is supplied to the unit.
CCD area image sensor S7030/S7031 series
11
Precautions (electrostatic countermeasures)
Element cooling/heating temperature incline rate
・ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
・ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.・ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.・ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of tempera-ture change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
Multichannel detector heads C7040, C7041
Features
C7040: for S7030 series C7041: for S7031 seriesArea scanning or full line-binnng operation
Readout frequency: 250 kHz
Readout noise: 20 e- rms
DT=50 °C (DT changes by cooling method.)
Input Symbol Value
Supply voltage
VD1VA1+VA1-VA2VD2VpVF
+5 Vdc, 200 mA+15 Vdc, +100 mA-15 Vdc, -100 mA+24 Vdc, 30 mA
+5 Vdc, 30 mA (C7041)+5 Vdc, 2.5 A (C7041)
+12 Vdc, 100 mA (C7041)Master start φms HCMOS logic compatible
Master clock φmc HCMOS logic compatible, 1 MHz
Related information
Precautions
∙ Disclaimer∙ Image sensors/Precautions
Technical information
∙ FFT-CCD area image sensor/Technical information
www.hamamatsu.com/sp/ssd/doc_en.html
CCD area image sensor S7030/S7031 series
Cat. No. KMPD1023E19 Apr. 2019 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218, E-mail: [email protected]: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8, E-mail: [email protected]: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10, E-mail: [email protected] Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01, E-mail: [email protected]: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41, E-mail: [email protected]: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R.China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866, E-mail: [email protected]: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)3-659-0080, Fax: (886)3-659-0081, E-mail: [email protected]
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of April, 2019.
12
Connection example
Connections to multichannel detector head and PC (C7557-01)
KACCC0402ED
AC cable (100 to 240 V included with C7557-01)
PC (USB 2.0/3.0) [Windows 7 (32-bit, 64-bit)/
Windows 8 (64-bit)/Windows 8.1 (64-bit)]
C7557-01
USB cable(included with C7557-01)
Image sensor+
Multichanneldetector head
Shutter*timing pulse
Dedicated cable(included with C7557-01)
* Shutter, etc. are not available.
Trig.
TE CONTROL I/O
SIGNAL I/O
POWER
KACCC0402ED
Multichannel detector head controller C7557-01
Features
For control of multichannel detector head and data acquisitionEasy control and data acquisition using supplied software via USB interface