1 C3D08065E Rev. A, 12-2015

C3D08065ESilicon Carbide Schottky Diode

Z-Rec® Rectifier

Features

• 650-VoltSchottkyRectifier• ZeroReverseRecoveryCurrent• ZeroForwardRecoveryVoltage• High-FrequencyOperation• Temperature-IndependentSwitchingBehavior• ExtremelyFastSwitching• PositiveTemperatureCoefficientonVF

Benefits

• ReplaceBipolarwithUnipolarRectifiers• EssentiallyNoSwitchingLosses• HigherEfficiency• ReductionofHeatSinkRequirements• ParallelDevicesWithoutThermalRunaway

Applications

• SwitchModePowerSupplies • PowerFactorCorrection• MotorDrives

Package

TO-252-2

Maximum Ratings (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Value Unit Test Conditions Note

VRRM RepetitivePeakReverseVoltage 650 V

VRSM SurgePeakReverseVoltage 650 V

VDC DCBlockingVoltage 650 V

IF ContinuousForwardCurrent25.5128

ATC=25˚CTC=135˚CTC=155˚C

Fig.3

IFRM RepetitivePeakForwardSurgeCurrent 3425 A TC=25˚C,tP=10ms,HalfSineWave

TC=110˚C,tP=10ms,HalfSineWave

IFSM Non-RepetitivePeakForwardSurgeCurrent 7160 A TC=25˚C,tp=10ms,HalfSineWave

TC=110˚C,tp=10ms,HalfSineWaveFig.8

IF,Max Non-RepetitivePeakForwardSurgeCurrent 650530 A TC=25˚C,tP=10µs,Pulse

TC=110˚C,tP=10µs,PulseFig.8

Ptot PowerDissipation 12052 W TC=25˚C

TC=110˚CFig.4

TJ,Tstg OperatingJunctionandStorageTemperature -55to+175 ˚C

Part Number Package Marking

C3D08065E TO-252-2 C3D08065

VRRM = 650 V

IF (TC=135˚C) = 12 A

Qc = 20 nC

PIN1

PIN2CASE

2 C3D08065E Rev. A, 12-2015

10

15

20

25

30

Re

ve

rse

Le

ak

ag

e C

urr

en

t, I

RR

(mA

)

TJ = 175 °C

TJ = 125 °C

TJ = 75 °C

T = 25 °C

0

5

10

0 100 200 300 400 500 600 700 800 900 1000

Re

ve

rse

Le

ak

ag

e C

urr

en

t, I

Reverse Voltage, VR (V)

TJ = -55 °C

TJ = 25 °C

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

VF ForwardVoltage 1.52.1

1.82.4 V IF=8ATJ=25°C

IF=8ATJ=175°CFig.1

IR ReverseCurrent 1020

50200 μA VR=650VTJ=25°C

VR=650VTJ=175°CFig.2

QC TotalCapacitiveCharge 20 nCVR=650V,IF=8Adi/dt=500A/μsTJ=25°C

Fig.5

C TotalCapacitance3953732

pFVR=0V,TJ=25°C,f=1MHzVR=200V,TJ=25˚C,f=1MHzVR=400V,TJ=25˚C,f=1MHz

Fig.6

EC CapacitanceStoredEnergy 3.0 μJ VR=400V Fig.7

Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.

Thermal Characteristics

Symbol Parameter Typ. Unit Note

RθJC ThermalResistancefromJunctiontoCase 1.25 °C/W Fig.9

Typical Performance

Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics

020040060080010001200

8

10

12

14

16

18

20

Fow

ard

Cu

rren

t, I F

(A)

TJ = -55 °C

TJ = 25 °C

TJ = 75 °C

TJ = 175 °C

TJ = 125 °C

0

2

4

6

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Fow

ard

Cu

rren

t, I

Foward Voltage, VF (V)

I F (

A)

VF (V) VR (V)

I R (

mA)

3 C3D08065E Rev. A, 12-2015

30

40

50

60

70

80

90

I F(A

)

10% Duty20% Duty30% Duty50% Duty70% DutyDC

0

10

20

30

25 50 75 100 125 150 175

TC (°C)

Figure3.CurrentDerating Figure4.PowerDerating

60

80

100

120

140

PTOT(W

)0

20

40

25 50 75 100 125 150 175

TC (°C)

Figure5.TotalCapacitanceChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage

Typical Performance

10

15

20

25

30

Ca

pa

citi

ve

Ch

arg

e,

QC

(nC

)

Conditions:TJ = 25 °C

0

5

10

0 100 200 300 400 500 600 700

Ca

pa

citi

ve

Ch

arg

e,

Q

Reverse Voltage, VR (V)

150

200

250

300

350

400

450

Ca

pa

cita

nce

(p

F)

Conditions:TJ = 25 °CFtest = 1 MHzVtest = 25 mV

0

50

100

150

0 1 10 100 1000

Ca

pa

cita

nce

(p

F)

Reverse Voltage, VR (V)

I F(p

eak)

(A

)

TC ˚C TC ˚C

PTo

t (W

)C

(p

F)

VR (V)

QC (

nC

)

VR (V)

4 C3D08065E Rev. A, 12-2015

3

4

5

6

7

8

Ca

pa

cita

nce

Sto

red

En

erg

y, E

C( µµ µµ

J)

0

1

2

0 100 200 300 400 500 600 700

Ca

pa

cita

nce

Sto

red

En

erg

y, E

Reverse Voltage, VR (V)

Typical Performance

100

1,000

I FS

M(A

)

TJ = 25 °CTJ = 110 °C

1010E-6 100E-6 1E-3 10E-3

Time, tp (s)

Figure7.CapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrentversuspulseduration(sinusoidalwaveform)

tp (s)

I FS

M (

A)

VR (V)

E C(m

J)

Figure9.TransientThermalImpedance

100E-3

1

Ther

mal

Res

istan

ce (

o C/W

)

0.5

0.3

0.1

0.05

0.02

0.01

SinglePulse

1E-3

10E-3

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1Time, tp (s)

0.01

Ther

mal

Res

ista

nce

(˚

C/

W)

T (Sec)

5 C3D08065E Rev. A, 12-2015

Recommended Solder Pad Layout

Part Number Package Marking

C3D08065E TO-252-2 C3D08065

Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering

Package Dimensions

PackageTO-252-2

Tjb June 2015 MX+DI+PSI

TO-252-2

SYMBOL MILLIMETERSMIN MAX

A 2.159 2.413A1 0 0.13b 0.64 0.89

b2 0.653 1.143b3 5.004 5.6c 0.457 0.61

c2 0.457 0.864D 5.867 6.248

D1 5.21 -E 6.35 7.341

E1 4.32 -e 4.58 BSC H 9.65 10.414L 1.106 1.78

L2 0.51 BSC L3 0.889 1.27L4 0.64 1.01θ 0° 8°

Tjb June 2015 MX+DI+PSI

66 C3D08065E Rev. A, 12-2015

Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.4600 Silicon Drive

Durham, NC 27703USA Tel: +1.919.313.5300

Fax: +1.919.313.5451www.cree.com/power

• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology.

• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,orairtrafficcontrolsystems.

Notes

• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i

RelatedLinks

Diode Model

VT RT

Diode Model CSD04060

Vf T = VT + If*RT

VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3)

Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C

VfT=VT+If*RT

VT=0.95+(TJ*-1.2*10-3)RT=0.054+(TJ*5.5*10-4)