c. piemonte 1 development of sipms a fbk-irst c.piemonte fbk – fondazione bruno kessler, trento,...
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C. Piemonte 1
Development of SiPMsa FBK-irst
C.Piemonte
FBK – Fondazione Bruno Kessler, Trento, Italy
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C. Piemonte
Outline
• Important parameters of SiPM
• Characteristics of FBK-irst SiPMs
• Application of FBK-irst SiPM
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C. Piemonte 3
- Gain
- Noise
- Photo-detection efficiency
- Dynamic range
- Time resolution
General view of the important parameters in a SiPM
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C. Piemonte 4
Gain = IMAX*Q = (VBIAS-VBD)*Q = (VBIAS-VBD)*CD __ ________ __ ____________ q RQ q q
charge collected per event is the area of the exponential decay which is determined by circuital elements and bias.
t
i
~exp(-t/RS*CD)
~(VBIAS-VBD)/RQ
exp(-t/RQ*CD)
Gain
number of carriers produced per photon absorbed
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C. Piemonte 5
1) Primary DARK COUNT
False current pulses triggered by non photogenerated carriers
Main source of carriers: thermal generation in the depleted region. Critical points: quality of epi silicon; gettering techniques.
NOISE
2) Afterpulsing: secondary current pulse caused by a carrier released by a trap which was filled during the primary event.
3) Optical cross-talk Excitation of neighboring cells due to the emission of photons during an avalanche discharge
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C. Piemonte 6
PDE = Npulses / Nphotons = QE x P01x FF
1. QE Quantum efficiency is the probability for a photon to generate a carrier that reaches the high-field region.
Maximization: anti-reflective coating, drift region location
Photodetection efficiency
2. P01. triggering probability probability for a carrier traversing the
high-field to trigger the avalanche.
Maximization: 1. high overvoltage 2. photo-generation in the p-side of the junction (electrons travel through the high-field region)
3. FF. Fill Factor “standard” SiPMs suffer from low FF due to the structures present around each micro-cell (guard ring, trench)
micro-cell
dead width
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C. Piemonte 7
Time resolution
Statistical Fluctuations in the first stages of the current growth:
1. Photo-conversion depth
2. Vertical Build-up at the very beginning of the avalanche
3. Lateral Propagation
t=0 pair generation0<t<t1 drift to the high-field regiont>t1 avalanche multiplication
* for short wavelength light the first contribution is negligible
t1
t’1
single carrier current level
the avalanche spreading is faster ifgeneration takes place in the center
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C. Piemonte 8
Development of SiPMs started in 2005 in collaboration with INFN.
• IRST: development of the technology for the production of SiPMs (large area devices/matrices) + functional characterization
• INFN (Pisa, Bari, Bologna, Perugia, Trento): development of systems, with optimized read-out electronics, based on SiPMs for applications such as: - tracking with scintillating fibers; - PET; - TOF; - calorimetry
FBK-irst SiPMs
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C. Piemonte 9
13
14
15
16
17
18
19
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
depth (um)
Do
pin
g c
on
c. (
10^
) [1/
cm^
3]0E+00
1E+05
2E+05
3E+05
4E+05
5E+05
6E+05
7E+05
E fi
eld
(V/c
m)
Doping
Field
n+ pShallow-Junction SiPM
1) Substrate: p-type epitaxial2) Very thin n+ layer 3) Polysilicon quenching resistance4) Anti-reflective coating optimized for ~420nm
p+ subst.
epi
n+
[C. Piemonte “A new Silicon Photomultiplier structure for blue light detection” NIMA 568 (2006) 224-232]
IRST technology
Drift regionHigh field region
p
guard region
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C. Piemonte 10
Layout: from the first design…(2005)
SiPM structure:- 25x25 cells- microcell size: 40x40m2
1mm
1mm
Geometry NOT optimizedfor maximum PDE (max fill factor ~ 30%)
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C. Piemonte 11
… to the new devices (i) (2007)
1x1mm2 2x2mm2 3x3mm2 (3600 cells) 4x4mm2 (6400 cells)
Fill factor: 40x40m2 => ~ 40% 50x50m2 => ~ 50% 100x100m2 => ~ 76%
Geometries:
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C. Piemonte 12
…to the new devices (ii)
Circular: diameter 1.2mm diameter 2.8mm
Matrices: 4x4 elements of 1x1mm2 SiPMs
Linear arrays: 8,16,32 elements of 1x0.25mm2 SiPMs
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C. Piemonte 13
• IV measurement fast test to verify functionality and uniformity of the properties.
• Functional characterization in dark for a complete characterization of the output signal and noise properties (signal shape, gain, dark count, optical cross-talk, after-pulse)
• Photo-detection efficiency
C. Piemonte et al. “Characterization of the first prototypes of SiPM fabricated at ITC-irst” IEEE TNS, February 2007
Tests performed at FBKTests performed at FBK
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C. Piemonte 14
Leakage current: mainly due to surface generation at the micro-diode periphery
Static characteristic (IV)Static characteristic (IV)
Matrix 4x4 1-9
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
0 5 10 15 20 25 30 35Vrev [V]
I [A
]
SiPM4 - W12
Breakdown voltage
Breakdown current: determined by dark events
Very useful fast test. Gives info about:- Device functionality- Breakdown voltage- (Dark rate)x(Gain) uniformity- Quenching resistance (from forward IV)
Reverse IV
Performed on several thousands ofdevices at wafer level
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C. Piemonte 15
Dark signals are exactly equal to photogenerated signals functional measurements in dark give a complete picture of the SiPM functioning
Signal properties – NO amplifierSignal properties – NO amplifier
0.E+00
1.E-03
2.E-03
3.E-03
4.E-03
5.E-03
6.E-03
7.E-03
0.0E+00 1.0E-07 2.0E-07 3.0E-07 4.0E-07
Time (s)
Am
pli
tud
e (V
)
Thanks to the large gain it is possible to connect the SiPM directly to the scope
VBIAS
SiPM
50
DigitalScope
SiPM: 1x1mm2
Cell: 50x50m2
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C. Piemonte 16
0
100
200
300
400
500
600
700
800
0 20 40 60 80 100 120Charge (a.u.)
Co
un
ts
0.0E+00
5.0E+05
1.0E+06
1.5E+06
2.0E+06
2.5E+06
3.0E+06
3.5E+06
31 32 33 34 35 36
Bias voltage (V)
Ga
in
Pulse gen.
Laser
Pulse area= charge
histogram collection
SiPM
~ns
1p.e. 23
4
pedestal.
Excellent cell uniformity
Lineargain
Signal properties – NO amplifierSignal properties – NO amplifier
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C. Piemonte 17
s = singled = double pulsesa = after-pulse
VBIAS
SiPM
50
DigitalScope
Pulses at the scope.
Av100x
Signal properties – with amplifierSignal properties – with amplifier
A voltage amplifier allows an easier characterization,but attention must be paid when determining the gain
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C. Piemonte 18
1x1mm2 (400 cells) 4x4mm2 (6400 cells)
Let’s look at the electro-optical characteristics of these devices:
Micro-cell size: 50x50m2
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C. Piemonte 19
1x1mm2 SiPM - 50x501x1mm2 SiPM - 50x50m2 cellm2 cell
0.01
0.10
1.00
-1.0E-08 4.0E-08 9.0E-08 1.4E-07Time (s)
Am
plit
ud
e (
a.u
.)T = 25C
T = 15C
T = 5C
T = -5C
T = -15C
T = -25C`
Signal shapeFast transient:avalanche currentthrough parasiticcapacitance inparallel with quenching res.
Slow transient:Exponential rechargeof the diode capac. through the quenching resistor
Important to note:The value of the quenching resistor increases with decreasing temperature and so the time constant follows the same trend
Set up: SiPM current signal converted into voltage on a 50 resistor and amplified with a wide-band voltage amplifier.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-1.00E-08 4.00E-08 9.00E-08 1.40E-07
Time (s)
Am
plitu
de (
a.u.
)T = 25C
Signal shape
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C. Piemonte 20
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+06
-0.70 -0.60 -0.50 -0.40 -0.30 -0.20 -0.10 0.00
Threshold (V)
Cou
nts
DC 28DC 28.5DC 29DC 29.5DC 30DC 30.5DC 31DC 32DC 33
1x1mm2 SiPM – 50x501x1mm2 SiPM – 50x50m2 cellm2 cell Dark count Dark count
Growing threshold
T = -30C VBD = 27.2V
From this plot we get idea of dark rate and optical cross-talk probability
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C. Piemonte 21
1x1mm2 SiPM - 50x50m2 cell
1.0E+05
1.0E+06
1.0E+07
27 28 29 30 31 32 33 34 35
Voltage (V)
Da
rk c
ou
nt
(Hz)
25.00
15.00
5.00
-5.00
-15.00
-25.00
0.0E+00
1.0E+06
2.0E+06
3.0E+06
4.0E+06
5.0E+06
27 28 29 30 31 32 33 34 35
Voltage (V)
Ga
in
T = 25C
T = 15C
T = 5C
T = -5C
T = -15C
T = -25C
Gain
Dark count
y = 0.0674x + 29.2
27
27.5
28
28.5
29
29.5
30
30.5
31
31.5
-30 -10 10 30Temperature (C)
Bre
akd
ow
n v
olta
ge
(V
)
y = 1E+14e-5.213x
1.E+05
1.E+06
1.E+07
3.2 3.4 3.6 3.8 4.0 4.21000/T (1/K)
Dar
k co
unt (
Hz)
DC 2V
DC 3V
DC 4V
• 2V overvoltage• 3V overvoltage• 4V overvoltage
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C. Piemonte 22
4x4mm2 SiPM - 50x50m2 cell4x4mm2
0.01
0.10
1.00
10.00
-1.0E-08 5.0E-08 1.1E-07 1.7E-07 2.3E-07Time (s)
Am
plit
ud
e (
a.u
.)
1mm2
T = -15C
T = -25C
Signal shape
1mm2 SiPM
0.E+00
1.E+06
2.E+06
3.E+06
4.E+06
5.E+06
6.E+06
7.E+06
28 29 30 31 32 33
Voltage (V)
Da
rk c
ou
nt (
Hz)
16 x Dark Count of 1mm2 SiPM
-15C -25C
0.E+00
1.E+06
2.E+06
3.E+06
28 29 30 31 32 33
Voltage (V)
Ga
in
-15C
-25CGain
Dark count
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C. Piemonte 23
4x4mm2 SiPM - 50x50m2 cell
Same conclusions as for the previous device:
• Excellent cell response uniformity over the entire device (6400 cells) Width of peaks dominated by electronic noise
-5.E-10 2.E-09 4.E-09 6.E-09 8.E-09
Charge (V ns)
28.6V
29.2V
29.6V
12 3
4
5
1
2
34 5 6
12
3
4 5 6 7
8
T=-25C Vbd=27.6VCharge spectra when illuminating the device with short light pulses
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C. Piemonte 24
Photo-detection efficiency (1)Photo-detection efficiency (1)
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C. Piemonte 25
Photo-detection efficiency (2)Photo-detection efficiency (2)
dark pulses light pulses
DC currwith light
DC curr. wo light
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C. Piemonte 26
……what is the PDE of these devices?what is the PDE of these devices?
Measured on 1x1mm2 SiPM using photon counting technique
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
30 31 32 33 34 35
Bias voltage (V)
PD
E
L=400nm
L=425nm
L=450nm
L=475nm
L=500nm
L=550nm
50x50m cell - ~50% fill factor
400nm
Broad peak between 450 and 600nm
500nm
425nm
450nm
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C. Piemonte 27
• Laser: - wavelength: 400 or 800nm - pulse width: ~60fs - pulse period: 12.34ns with time jitter <100fs• Filters: to have less than 1 photodetection/laser pulse• SiPMs: 3 devices from 2 different batches measured
Time resolution (1)Time resolution (1)
G. Collazuol, NIMA, 581, 461-464, 2007.
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C. Piemonte 28
Time resolution (2)Time resolution (2)
Distribution of thetime difference
Timing performance ()as a function of the over-voltage
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C. Piemonte 29
Microcell functionality measurementMicrocell functionality measurement
(measurement at RWTH Aachen)
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C. Piemonte
Measurement of microcell eficiency with a 5 um LED spot diameter
Microcell functionality measurementMicrocell functionality measurement
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C. Piemonte
Microcell functionality measurementMicrocell functionality measurement
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C. Piemonte 32
Some applications and Some applications and projects in which we are projects in which we are
involvedinvolved
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C. Piemonte 33
SiPM matrix – for PET (1)
Matrix 4x4 1-9
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
0 5 10 15 20 25 30 35Vrev [V]
I [A
]
SiPM4 - W12IV curves of 9 matrices of one wafer
1mm
9x16 IV curvesNon working SiPM
• Uniform BD voltage• Uniform dark rate
First, small monolithic matrix of SiPM:Element 1x1mm2
Micro-cell size: 40x40m2
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C. Piemonte 34
Na22 spectrum with LSOon a single SiPM (1x1mm2, 40x40m2 cell)
Res = 18%
Tests are ongoing in Pisa (DASiPM project, A. Del Guerra) on these devices coupled with pixellatedand slab LSO scintillators
SiPM matrix – for PET (2)
NEXT STEP: Larger monolithic matrices
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C. Piemonte 35
50%
55%
60%
65%
70%
75%
80%
85%
90%
95%
100%
0 1 2 3 4
SiPM dark current (microAmps/mm^2)
Mu
on
Eff
icie
ncy
fo
r 1
kHz
no
ise
2.8 mm round IRST
SiPMfor CMS-Outer Hadroncalorimeter
Muonresponse in YB2 using SiPMs
MuonEfficiency in YB2Baseline HPD response at 8 kV
Circular SiPM - 50x50m2 cellfor CMS – Outer Hadron Calorimeter
Muon response using SiPMs
Muon response using HPD at 8kV
package designed by Kyocera
module with 18 SiPMs
Each SiPM reads a bundleof 5 fibers
6mm2 area SiPM
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C. Piemonte 36
Array of SiPM for Fiber Tracking
32x array connected to ASIC designed for strip detectors=> capacitive divider at the input to reduce signal
Response uniformity under LED illumination
INFN PG (R. Battiston) + Uni Aachen
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C. Piemonte 37
HYPERimage project
Seventh Framework programme, FP7-HEALTH-2007-A
coordinator
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C. Piemonte 38
HYPERimage projectDevelopment of hybrid TOF-PET/MR test systems
with dramatically improved effective sensitivity
First clinical whole body PET/MR investigations of breast cancer
TOF-PET building blocks
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C. Piemonte 39
• The SiPM is going to play a major role as a
detector for low intensity light, because of:
- comparable/better proprieties than PMT;
- the inherent characteristics of a solid-state det..
• IRST has been working on SiPMs (GM-APDs) for about
3 years obtaining very good results in:
- performance;
- reproducibility;
- yield;
- understanding of the device.
Conclusion