building analog & digital power supplies using renesas...
TRANSCRIPT
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.
2012/8/15
瑞萨电子(中国)有限公司
A&P产品中心
Building Analog & Digital Power Supplies Using Renesas Green Semiconductor Devices
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.2
Agenda
Contents guide
Renesas Company Introduction
Renesas Leading Technologies
Renesas A&P Product for High Efficiency System Design
MOSFET
IGBT Device
FRD (Fast Recovery Diode)
Optical Devices
Others Standard Product
A&P Applications Example
Page3513222837 4247 5457
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.3
Contents Guide
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.4
1. Contents Guide
Renesas company introduction
Renesas take responsibility to support & provide green products
Renesas is high technology company in semiconductor– Renesas semiconductor technology base– Semiconductor technology trend by Renesas view
Renesas can provide high performance semiconductor products– MCU products– Auto electronic products– Soc products– Analog & power device products
Renesas take responsibility to support & provide green solutions
Green communications with Green semiconductor solutions – High efficiency system design for power supply and Data center – Technologies in digital power supply – Solutions for Green energy system
UPS, inverter, solar power… support– High voltage/current, high capacity IGBT development
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.5
Renesas Company Introduction
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.6
Worldwide Semiconductor Suppliers: CY2011 Revenue Ranking
Global Semiconductor Market Position
1
2
3
4
5
6
7
9
12
10
8
11
Supplier 2011 Revenue ($M) 2011 Share2011Rank
Source: IHS iSuppli “Annual 2011 Semiconductor Market Share”
Intel 48,721
Samsung Electronics 28,563
Texas Instruments 13,967
Toshiba 12,729
Renesas Electronics 10,648
Qualcomm 10,198
STMicroelectronics 9,735
Hynix 9,293
Micron Technology 7,365
Broadcom 7,160
Advanced Micro Devices (AMD) 6,436
Infineon Technologies 5,312
15.6%
9.2%
4.1%
3.4%
3.0%
1.7%
2.1%
2.3%
3.3%
3.1%
4.5%
2.4%
Renesas Electronics 10,648
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.7
Bit Ranking
8-bit No.1
16-bit No.1
32-bit No.1
Year 2011
34% Market Share
Source: Gartner’s "2011 Global Semiconductor Market Share", published on March 31, 2012. Above chart is developed by Renesas Electronics based on Gartner’s data.
The world's No.1 MCU supplier, accounted for 34% of total market share. (2011)
Global Microcontroller Market Position
MUS$/Year
1509
1113 1100973 961 938
683 593 508
Freescale Infineon Atmel TI Microchip STMicro Fujitsu Samsung NXP
4299
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.8
Renesas Electronics Business Direction
Green Technology Multimedia Integrated Technology
World’s No.1 or No.2
- 8-bit MCU
- 16-bit MCU
- 32-bit MCU
- Automotive MCU
- Secure MCU
- Power MOSFET- IPD - IGBT - Opto Electronics Devices
(LD, Coupler) - Motor Driver- LED Driver- LCD Driver
- Handset /RFIC- Special-purpose processor- DTV/STB SoC- Consumer/Industrial ASIC - Network storage devices- USB3.0
MCU Analog & Power Devices SoC
Automotive Electronics Automotive Electronics
Infrastructure Industry, Embedded System
Infrastructure Industry, Embedded System Cloud-ComputingCloud-Computing
CloudFamily
Handset
Global Business - 3 Focused Product Markets
#1
#1
#1
#1
#1
#2 #1
#1
#2
#1
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.9
Towards a Smart Society
Contribute to realize a Smart Community which enables a convenient, safe, and energy saving life by leveraging the synergy of Analog & Power devices, our strong MCU and SoC.
スマートグリッド
Smart Factory
Smart Building
Smart CarSmart Society
Smart Home
Smart Grid
Smart School
Smart Store
Power Plant
Solar/Wind- Generated Power Plant
Energy Management
Smart Meter
Book Map Movie
Internet
ITS
Smart Parking
Smart Transportation
Next-Generation Service Station
Electric Grid
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.10
Smart Home Solution
•Solution for power conditioner.•Higher efficiency with MCU + power
semiconductor.
Solar power Solar power Solar power
General
Inverter home applianceInverter home applianceInverter home appliance
Power meterPower meterPower meter
•MCU for inverter control.•Suggest power semiconductor and, IC for
power factor improvement.
•Solution for power meter. (measurement,communication.)
•Measure power consumption of homeappliances with low cost.
•Long lasting battery by low power MCU.•Direct connection to various sensors.
Healthcare equipmentHealthcare equipmentHealthcare equipment
•Wireless solution for ZigBee and RF4CE.•Solution for PLC.
NetworkNetworkNetwork
Solar Power generation
Plug-in Hybrid
Inverter home appliance
LED Lighting Inverter
HAN
HAN: Home Area Network
Wind Power generation
Power conditioner Smart meter
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.11
Smart Building Solution
Building management system Building management system Building management system
HMI (Touch panel) HMI (Touch panel) HMI (Touch panel)
LED lighting LEDLED lighting lighting
•Totally realize safety control of buildings, higher efficiency of each device and networkmanagement.
•Fine dimming control by MCU.•Provide total solution.
•“Capacitance detection circuit” available. Detection function by hardware reduces 90% of power consumption.
HVAC: Heating, Ventilating, Air Conditioning DALI: Digital Addressable Lighting Interface
Sensor (Detector)Sensor Sensor ((Detector)Detector)•Provide analog-integrated solution with low
power consumption.
Building management system
Ethernet
Server
HVAC
Sensor(Smoke detector)
DALI, etc
Independent communication
Entrance/exit control
Card reader ID card
HMI
LED lighting
Surveillancecamera
General
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.12
FA computer
PC (setup, maintenance)
General- purpose
inverter motor
USB / Ethernet
AC servo motor
CA
N
Ethernet
Machine controller
MServo motor
IO-Link
Sensor
MInverter motor
HMI
UPS
UPS: Uninterruptible Power Supply
Smart Factory Solution
AC servo/inverter motor ACAC servo/inverter motor servo/inverter motor
Sensor Sensor Sensor
Industrial networkIndustrial networkIndustrial network
•MCU with LCD direct display. •Easy to build network by Ether and USB.
HMIHMHMII
HMI: Human Machine Interface
•Improve productivity and power efficiency byhigher performance and higher accuracy.
•Total control with high accuracy by improvednetwork function and data processingperformance.
•More intelligent sensors: with smaller, lowerpower consumption, and networking features.•Downsizing and eco-friendly Smart Analog.
General
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.13
Renesas Leading Technologies
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.14
MCU
2.1 Renesas Product Strategy for Smart Society
Provide further power efficiency enabling Smart Society
2-chip solutionsSmart Car(including EV/HEV) 2-chip solutionsSmartphone
& Tablet PC 2-chip solutionsSmartSociety
Continuous product launches for efficiency in smart car, phone and social infrastructure
Provide differentiation through full kit solutions: power, analog, MCU and software
Expand overseas influence in Sales, technical support and new product requirements
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.15
2.2 Power Innovation in Smart Energy
Power conversion is the critical element of Smart Energy applications
Renesas leads in cutting-edge high efficiency, small size and safe usage
DC/AC DC/AC
AC DC/DCAC/DC AC/DC
LED
DC/AC
AC/DC
Air Con
DC/DCAC/DCAC/DC
TVBattery Charger
Smart Meter
Power Plant
Solar PowerPower Conditioner
EV
PFC IC, SJMOS, IGBTTriac, OptocouplerLED Driver
AC/DC ⇒ DC/DC ⇒ Converter, MOS,Driver MOS DC/AC ⇒
MOS, IGBT, Opto-coupler, HVMOSDriver IC, BMIC
PFC IC: World’s best
efficiency
SJ-MOS: World’s best
efficiency
IGBT: World’s best efficiency VCE
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.16
2.3 Technology Development for Low Power
New materials
Strategic Product
Stripe
Super Junction(600V)
Deep TrenchIGBT SiC
GaN
Diode(~1.2KV)J-FET(600V)
MOS(600V)
p
n
Supporting key trends:
Reduced cooling cost
Reduced size
Safety & high reliability
High temperature
Silicon device (Low power process)
Industrial Equipment
Automotive
Consumer Electronics
Comms
MOSFET IGBT
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.17
SiC-Diode / SiC FET
High power
High temperature operation
Lower loss
2.4 Foundation for Power Innovation
Power (W)
1
10
100
1k
10k
100 1k 10k 100k 1MFrequency (Hz)
IGBT
Si MOSFET
UPS, Motor control
Train, Industrial equipment
ComputingMobile
ConsumerWashing Machine, Air-Con…
Power conversion
GaN(High Speed)
SiC(High Power)
InverterInverter
DC/DC, PFCDC/DC, PFC
0 00 0 0 0
DCBA210E543F876*
Inv e r te rInv e rt er
0 00 0 0 0
DCBA210E543F876*
Inv e r te rInv e rt er
0 00 0 0 0
DCBA210E543F876*
Inv e r te rInv e rt er
0 00 0 0 0
DCBA210E543F876*
Inv e r te rInv e rt er
Si SiC, GaN
GaN FET
High speed
Lower loss
Innovation based on benefits of new materials: Gallium-Nitride & Silicon-Carbide
600V SiC-Diode now in production – 600V GaN-FET silicon 2014
Automotive
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.18
SiC has several benefits over silicon
Fewer cooling devices & less cost
Downsizing of equipment
2.5 Advantage of SiC Devices
High Efficiency Reduced heat lossLower Switching loss and conduction loss
SiC’s physicality High temperature operation
High Efficiency Reduced heat lossLower Switching loss and conduction loss
SiC’s physicality High temperature operation
SiC-SBD
600VUnder MP
Hybrid SiC-JFET
600VWS: end 2012
SiC-MOSFET
600VPlanning
SiC-JFET+Si-MOSFET
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.19
trr-VF Characteristicre
vers
e re
cove
ry ti
me
trr(n
s)
0
50
100
0 1 2 3 Forward voltage VF(V)
Low VF(RJU60C series)
Tc=25℃
SiC-SBD (RJS6004TDPP-EJ)
Ultra Fast recovery(RJU605 series)
Conduction Loss
Switc
hing
Los
s2.6 Leading Renesas SiC-SBD Technology
1.0
0.5
0SiC-SBD
15%
Si-FRD
Power loss 15% improved
Market-leading efficiency & low power losses
Higher Efficiency
Tc=25℃
Market-leading efficiency & low power losses
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.20
2.7 GaN Device Application Advantage Example
High Efficiency Reduced Heat loss
Reduction in cooling system costs
High Speed Switching Down Sized Peripherals
Higher Speed Switching (GaN:300kHz, Si:100kHz) Smaller Capacitance and Inductance
High Efficiency Reduced Heat loss
Reduction in cooling system costs
High Speed Switching Down Sized Peripherals
Higher Speed Switching (GaN:300kHz, Si:100kHz) Smaller Capacitance and Inductance
2-chip solutionsSwitchingDevice 2-chip solutionsSwitching
Power Supply 2-chip solutionsEndProduct
Present MOSFET
GaN FET package
assumption
Inside of AC
adaptor
Smaller heat radiation system & higher frequency
No adaptor
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.21
2.8 Renesas GaN Device Development
Apr 2002 – Mar 2006 (National Project)
Mar 2010 (R&D in NEC Laboratories)
GaN power device R&D stage
Normally-off operation of 600V TEG samples (published in IBDM in 2009)
Normally-off operation of GaN-MOSFET (600V, 10A)
Process line under construction for mass production
May 2012 (Renesas)
High frequency GaN device for communication base station
World record of 400W achieved in W-CDMA standard
Normally-on devices for CATV trunk amplifier released
GaN HEMT (30V) for DC – 1.5GHz wide-band operation with 22dB high gain via cascade amplifier
28GHz maximum frequency, 0.8–1.0A/mm maximum current
2011 (Renesas)
AlGaNキャップ層
ゲートソース ドレイン
AlxGa1-xN分極電荷中和層AlGaN電子供給層
GaNチャネル層
AlxGa1-xNバッファ層
Si基板
Al2O3
フィールドプレート
AlGaNキャップ層
ゲートソース ドレイン
AlxGa1-xN分極電荷中和層AlGaN電子供給層
GaNチャネル層
AlxGa1-xNバッファ層
Si基板
Al2O3
フィールドプレート
GaN transistor
400W amp.
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.22
Renesas A&P Product for High Efficiency System Design
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.23
Automotive Mixed Signal
SBSPower SupplyHDD/ODDMotor Driver PFC
Automotive Mixed Signal
SBSPower SupplyHDD/ODDMotor Driver PFC
LV MOSFETHV MOSFETIGBTThyristor
/TRIAC IPD
LV MOSFETHV MOSFETIGBTThyristor
/TRIAC IPD
Opto CouplerLaser DiodeDetector IC RF Switch IC RF TransistorGaAslow-noise FET
Opto CouplerLaser DiodeDetector IC RF Switch IC RF TransistorGaAslow-noise FET
Small LCD Driver
PDP Driver
Small LCD Driver
PDP Driver
Diode TransistorStandard ICSRAM EEPROMReset IC
Diode TransistorStandard ICSRAM EEPROMReset IC
Analog ICAnalog IC Power DevicesPower Devices
SBS: Smart Battery System IPD: Intelligent Power Device
3.1 Green Products of A&P Center
Consumer MarketConsumer Market Automotive MarketAutomotive Market Communication Market
Communication Market
Industrial MarketIndustrial Market
AC ServoAC ServoM
Low power Consumption
Small Package
High Quality
Stable Supply
Optical & High-frequency DevicesOptical & High-frequency Devices
Display DriverDisplay Driver Standard ProductsStandard Products
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.24
•1-chip LED driver for various LED bulb(AC power, PFC)
• Total solution for Solar Power with MCU + IGBT & Power Devices
3.2 Renesas in Green Power (Lighting, Solar Power)
Solar Power
• Reference design for Power conditioner
I2C Bass InterfacePH5551A2NA1 (I2C : 3.0V)
PH5553A2NA1 (I2C : 1.8V)
Analog LinearPH5502B2NA1 (230μA@100lx)
PH5503A2NA1 (60μA@100lx)
Developing
TV, PC, Light
TV, LightTV, Light
Mobile
R2A20134/35
1200V/30A~60A
RJK60S series
RJH1CD/Vx series
600V/20A~30A
NEW
NEW
IGBT CouplerIGBT Coupler
IGBTIGBT
SJMOSSJMOS
2.5APS9402
LED LightingAnalog & Power products support Energy Saving
SiC DiodeSiC DiodeRJS6004 series
600V/10A~30ANEW
・Adjust brightness & On/OffAmbient Light Sensor
Smart Home
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.25
VccGNDNC GCom
Inverter UnitPFC* Unit
IGBT
Single package for Sic + IGBT
SiCdiode
IGBTW/W-top-class
PFC performance
High performance of PFC circuit by single package of SiC diode & IGBT
* PFC: Power Factor Correction
IGBT
SiC diode
3.3 Renesas in Home AppliancesRealized high-performance Inverter technology
1.0
0.5
0SiC-SBD
15%
Si-FRD
Power loss 15% improved
SiC-SBD device for consumer market, paring with IGBT device
IGBTIGBT
PFC(Power Factor Correction)
PFC(Power Factor Correction)
Power MOSFETPower MOSFET
Photo CouplerPhoto Coupler#2
#1
Products with W/W-top-class performance
Smart Home
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.26
3.4 Renesas in Green & Smart Energy
Power conversion is the critical element of Smart Energy applications Renesas leads in cutting-edge high efficiency, small size and safe usage
DC/AC DC/AC
AC DC/DCAC/DC AC/DC
LED
DC/AC
AC/DC
Air Con
DC/DCAC/DCAC/DC
TVBattery Charger
Smart Meter
Power Plant
Solar PowerPower Conditioner
EV
PFC IC, SJMOS, IGBTTriac, OptocouplerLED Driver
AC/DC ⇒ DC/DC ⇒ Converter, MOS,Driver MOS DC/AC ⇒
MOS, IGBT, Opto-coupler, HVMOSDriver IC, BMIC
PFC IC: World’s best
efficiency
SJ-MOS: World’s best
efficiency
IGBT: World’s best efficiency VCE
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.27
3.5 Renesas in Communication
Renesas provide green & lower power & smart component for communication network
Renesas Green Product Inside
Network Power PFC/MOS/IGBT …..
More
End Application DeviceLED,SBS, Power device……..
Switching
Optical Devices in high speed communicationMemory: High speed SRAM/LSRAM,EEPROM
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.28
Power Devices MOSFET Technology
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.29
Si-FRD
SiC-SBD
Planar structure(conventional type)
SJ structure
Body Diode(1-chip structure)Built-in FRD(1-chip structure)
with Diode
RJUxxxx
RJKxxxx
RJLxxxx
RJKxxSx
RJPxxxx
RJHxxxx
without Diode
Built-in FRD(2-chip structure)
RC-type(Body Diode)
RJHxxxxR
RJSxxxx
Combined products RJQxxxx
N+
D
GS
PN
NN
P
P
4.1 High-Voltage Power Devices by Renesas
MOS-FET
IGBTInsulated Gate
Bipolar Transistor
FRD/SBDFast Recovery Diode
Schottky Barrier Diode
For switchingapplications
For High-currentapplications
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.30
2011 2012 2013
600VSJ-MOS
600VSJ-MOS
Hig
h br
eakd
own
volta
ge, H
igh
curr
ent
(FY)
Applying Automotive Market
600V600V High-speed
Including FRD
2014
PDP,UPS, DC/DC Power Supply
:Under planning
Home Appliances
Home Appliances
High Breakdown Voltage900V SJ-MOS
High Breakdown Voltage900V SJ-MOS
4.2 SJ-MOS Developing Roadmap
650-700VSJ-MOS
300VSJ-MOS
FA, AutomotiveMarket
FA, AutomotiveMarket
Solar Power ConditionerMotor Control for FA
HEV, EV
Power supply for TVPower supply for AC/DC
Motor for HA
Applying to wide area application with high-spec deep trench processApplying to wide area application with highApplying to wide area application with high--spec deep trench processspec deep trench process
New Material, Structure GaN
New Material, Structure GaN
Under Development
2015
SJ Structure of Competitor Device
SJ Structure of Renesas device
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.31
4.3 Advantages of HV-MOS
SJ-MOS FET・Low Ron (On-resistance)
※Contributing to reduce the loss in the power conversion
・Small Qgd (Required electric charge for Power MOSFET operations)
※Affecting the switching speed
Fast recovery FET・with improved built-in Body Diode→effective for reducing
recovery switching loss→effective for reducing noises
RJK60S5DPK-M0
RJL6020DPK
100
96
92
88
84
Effic
ienc
yh
[%]
Output Power [W]0 100 200 300 400 500
AC90V, Vout=400V, f=65KHzR2A20118A (CRM Interleaved PFC IC)
210ns
130ns130ns
RDS(on) [W]0.01 0.1 1.0 10
1.0
10
100
Qgd
[nC
]
Current Planar type
RJK60S5DPK-M0Super Junction
High
effici
ency
RJL6020DPK
SJSJ by S by S companycompany
SJ bySJ byF companyF company
SJ by SJ by T T comnanycomnany
SJSJ bybyI companyI company
(80 PLUS®certification)(Power Supplies for Servers)
Platinum →
Titanium 94% 96%
(80 PLUS®certification)(Power Supplies for Servers)
Platinum →
Titanium 94% 96%
2%UP!!2%UP!!2%UP!!
RJK5012DPP(500V,12A)
RJRJLL5012DPP5012DPP(500V,12A)(500V,12A)
Top-level Efficiencyof power conversionTop-level Efficiencyof power conversion
with improvedBodyDiode
with regularBodyDiode
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.32
4.4 Planar, Trench MOSFET Roadmap
2011 2012 2013
400 to 650VPlanar Process
Conventional Products(AP5H)
400 to 650VPlanar Process
Conventional Products(AP5H)
(FY)
Trench MOSFor Automotive
200-300V
600V Planar Process with
Low cost (AP5H)
600V Planar Process with
Low cost (AP5H)
2014
UPS、DC/DC电源
1500 to 2000VTrench Process
MOSFET
High Breakdown Voltage1200V SiC-FET(New Material)
High Breakdown Voltage1200V SiC-FET(New Material)
150-250VTrench MOSFET
AC/DC Power Supply,LED Lighting
Enhancing Breakdown Voltage Lineup and Reducing CostBy Developing Multi Process Structure Enhancing Breakdown Voltage Lineup and Reducing CostBy Developing Multi Process Structure
900 to 1350VTrench Process
MOSFET
900 to 1350VTrench Process
MOSFET
2015
150-250VGaN MOS
(New Material)
150-250VGaN MOS
(New Material)
Hig
h br
eakd
own
volta
ge, H
igh
curr
ent
:Under planning
Under Development
Under Development
Under Development
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.33
Hig
h Ef
ficie
ncy
WINFET (~25V)
12th Gen.
WINFET (~25V)
12th Gen.
WINFET2 (~25V)
xxth Gen.
WINFET2 (~25V)
xxth Gen.
BEAM (25-30V)
11th Gen.
BEAM (25-30V)
11th Gen.
Ultra High Speed SwitchingUltra High Speed Switching GaNGaN DeviceDevice
JET-MV*(40~100V) 10th Gen.
JET-MV*(40~100V) 10th Gen.
**MV: Middle VoltageMV: Middle Voltage
JET (30V) 10th Gen. JET (30V) 10th Gen.
Next Gen-MV (40~100V) xxth Gen.
Next Gen-MV (40~100V) xxth Gen.
BEAM2 (30V)
13th Gen.
BEAM2 (30V)
13th Gen.
Next Gen (30V)
xxth Gen.
Next Gen (30V)
xxth Gen.
4.5 LV Devices Road Map (High SW Speed)
LowLow GGaatete Charge DrivingCharge Driving
<<WaferWafer Process>Process>
ServerNBPC Router
YearYear
5x65x6 (WPAK)(WPAK)
3x33x3 HWSON3030HWSON3030
3.0x4.63.0x4.6 HWSON3046(Dual)HWSON3046(Dual)
3x33x3 HWSON(DualHWSON(Dual))
4x44x4 QFN24QFN24
6x66x6 QFN40QFN40
Hig
h In
tegr
atio
n
DrMOS*DrMOS*
POLPOL--SiPSiP**
5x65x6 WPAK(DualWPAK(Dual))
8x88x8 QFN56QFN56
minimini--POLPOLCSPCSP
5x55x5 QFN32QFN32
~~2010 2010 2011 2012 2013 2014 2012011 2012 2013 2014 20155
DiscreteDiscrete(Dual)(Dual)
DiscreteDiscrete(Single)(Single)
<Package><Package>**POLPOL--SiP:ControllerSiP:Controller + Hi/Lo + Hi/Lo MOSFETsMOSFETs **DrMOS:DriverDrMOS:Driver + Hi/Lo + Hi/Lo MOSFETsMOSFETs
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.34
Perf
orm
ance
UMOS4 4th Gen. UMOS4 4th Gen.
UMOS5 5th Gen. UMOS5 5th Gen.
UMOS6 6th Gen. UMOS6 6th Gen.
UMOS7 7th Gen. UMOS7 7th Gen.
Low RDS(on)UMOS6 Pch
(12~30V) 6th Gen.
UMOS6 Pch (12~30V) 6th Gen.
4.6 LV devices Road Map (Low RDS(on))
GaNGaN DeviceDevice
Mobilephone
PrinterPower tool NBPC
AC adapter
UMOS4 Pch (12~30V) 4th Gen.
UMOS4 Pch (12~30V) 4th Gen.
<<WaferWafer Process>Process>
YearYear~~2010 2010 2011 2012 2013 2014 2012011 2012 2013 2014 20155
5x6 5x6 WPAKWPAK5x6 5x6 8pHVSON8pHVSON
5x65x6 SOPSOP--88 3x33x3 (mini(mini--HV)HV)
3x33x3 (HWSON3030)(HWSON3030)
2x52x5 (6pHWSON)(6pHWSON)
2x2.72x2.7 (8pHUSON)(8pHUSON)
1.5x1.51.5x1.5 4pEFLIP4pEFLIP
2x22x2(Dual)(Dual) ((6pHUSON2020)6pHUSON2020)
CSPCSP
Hig
h In
tegr
atio
n
for Mobile Phonefor Mobile Phoneand Tablet PCand Tablet PC
for consumer for consumer equipmentequipment
for NBPC for NBPC Li+ batteryLi+ battery
66pEFLIPpEFLIP
2x22x2((SingleSingle))(6pHUSON2020)(6pHUSON2020)
66pEFLIPpEFLIP
4pEFLIP4pEFLIP
<PKG><PKG>
1.6x1.61.6x1.6 4pEFIP4pEFIP
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.35
4.7 DrMOS History & Roadmap
2003
DrMOS initial Spec.1.0(8x8 QFN)
2004DrMOS Spec. 1.0
2007DrMOS Spec. 3.0(6x6 QFN)
2004R2J20601NP(1st Generation)
2006R2J20602NP(2nd Generation)
2007R2J20604NP(PWM 3.3V)
2009R2J20605NP(8 x 8 mm)R2J20651NP(6 x 6 mm)
2004Dec.PIP212(Philips)
- Fairchild- Vishay- Infineon
Renesas is the first DrMOS vendor, and always running as a top supplier
2010R2J20652ANPR2J20653ANP(6 x 6 mm)
DrMOS Spec. 4.0(6x6 QFN)
2010-2011R2J20654NPR2J20655NPR2J20656ANPR2J20657NPR2J20658NP…(6 x 6 mm)
IntelVR11.x
Other suppliers
- AOS- On-Semi
IntelVR12
DrMOS
IntelVR12.5/12.6
2010
2007R2J20701NP(8 x 8 mm)
POL-SiP(Point of Load- System in Package)
2009R2J20702NP
(8 x 8 mm)
2010R2J20751NP(6 x 6 mm)
(= Integrated Driver-MOSFET)
2012R2J206X(6 x 6 mm)
For 2013 Model …
2012R2J207xx
Higher Performance Lower Cost, High Freq.
Underdevelopment
Mini SizeSimple function
2003
DrMOS initial Spec.1.0(8x8 QFN)
2004DrMOS Spec. 1.0
2007DrMOS Spec. 3.0(6x6 QFN)
2009R2J20605NP(8 x 8 mm)R2J20651NP(6 x 6 mm)
DrMOS Spec. 4.0(6x6 QFN)
2010-2011R2J20654NPR2J20655NPR2J20656ANPR2J20657NPR2J20658NP…(6 x 6 mm)
IntelVR11.x
IntelVR12
DrMOS
IntelVR12.5/12.6
2010
2012R2J206X(6 x 6 mm)
Higher Performance Lower Cost, High Freq.
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.36
Vin
DrMOS = Driver IC + Power MOSFET x 2
Driver
Driver
Controller
QFN 56pin (8x8mm)Small Area/Saving Space
Lower Loss/High Efficiency
Higher Switching
Easy for PCB Power Design
Combine and
Optimize
QFN 40pin (6x6mm)or
3chip in 1 PKG
Driver IC HighMOSFET
Low MOSFET
4.8 Integrated Power Solution DrMOS
+
•Voltage Regulator
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.37
Power Device IGBT Technology
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.38
5.1 IGBT Developing Roadmap
2010 2011 2012
G6H 600VFast & Low Vce(sat)
G6HG6H 600V600VFast & Low Fast & Low Vce(satVce(sat))
(FY)2013 2014
RJH60Fx
G6H 600VLong Time Short
Circuit Withstand Time (Up to 8us)
G6HG6H 600V600VLong Time Short Long Time Short
Circuit Withstand TimeCircuit Withstand Time(Up to (Up to 8us8us))
G6H-RC 600VIncluding Body DiodeG6H-RC 600VIncluding Body Diode
G7H650V
G7H650V
G7H650VGG77HH66550V0V
G8H650VG8HG8H66550V0V
••TrenchTrench••Thin WaferThin Wafer••Cell Structure OptimizationCell Structure Optimization
600V
>1,100V
2015
G6H-RC1,100-1,350V
Including Body Diode
G6HG6H--RCRC1,1,100100--1,3501,350VV
Including Including Body DiodeBody Diode
G7H1,250V
Low Vce(sat)
G7H1,250V
Low Vce(sat)
G7H1,800VGG77HH1,800V1,800V
RJH1BxxR/1CxxR
RJH60AxxR
RJH60RJH60DDxx/Mx/Vx/Mx/Vx
RJH1CVx/Dx/Mx
RJP65S0xx
G9H650VG9HG9H66550V0V
•Stripe Structure
••Narrow PitchNarrow Pitch
•New Core Technology
High Current for Inverter(Up to 400A@25C)
Ultra HighUltra High--SpeedSpeedtftf=40=4030ns(PFC)30ns(PFC)
G8H1,250VG8HG8H1,250V1,250V
G8H2,000VG8HG8H2,000V2,000V
Vce(sat):1.4VVce(sat):1.4V1.2V 1.2V
Technology for High Breakdown VoltageTechnology for High Breakdown Voltage
More Improving PerformanceMore Improving Performance
G6H1,200V
Including FRD
G6HG6H1,2001,200VV
Including FRDIncluding FRD
High Current for High Current for IInverternverter((Up to Up to 400A@25400A@25C)C)
Next GenerationNext Generation
Enhancing High Breakdown Voltage Lineup,Improving Performances of ProductsEnhancing High Breakdown Voltage Lineup,Improving Performances of Products : :Under planning
Hig
h br
eakd
own
volta
ge, H
igh
curr
ent
Under Development
Under Development
Under Development
Next GenerationNext Generation Next GenerationNext Generation
Next GenerationNext Generation
Next GenerationNext Generation
Next GenerationNext Generation
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.39
5.2 Advantages of Renesas IGBT
High Efficiency
High Reliability
High-level Technology
■Low Vce(sat)Low saturation voltage between Collector and Emitter.So, low heatgeneration.
■High-speed switching
■Improved spec. of Short-Circuit withstand time(tsc)◆It shows the time in which the part would not break down when the short-circuit would happen.◆The longer tsc, the higher reliability.◆There is the trade-off relationship between Vce and tsc.
■G7H has been developedto exceed G6H performances
■IGBT with new function
Ultra:RJH608xBHigh-speed 60ns@60A
RJH60Fx1.35V@50A
RJH60Dx:5usRJH60Vx:6usRJH60Mx:8us
Reverse-conducting typeBuilt-in Di for flowingregenerative current from motors, coils andso on when IGBTsturned off.RJH60A8xR (Body Diode)
G6H G7HVol. 600V 650VVol. 1200V 1250V
0
Vce(sat) [A]0 1.0 2.0
5
10
15
tsc
[ns]
RJH60Fx
RJH60Dx
RJH60Mx
G7H
RJH60Vx
G6H
SW Off Loss [uJ]400 800 1,6001,200
1.0
1.5
2.0
Comp.D
Comp.A
Comp.BV
ce(s
at) [
V]
Comp.C
G7H
G6H
G5H
2.5
Ic[A
]
0
20
40
60
80
100
Vce(sat) [V]0 1.0 2.0 3.0
Comp.B
Comp.A
Comp.DComp.C
HighHighEfficiencyEfficiency
G6H
G7Htf(Fall time)Speed-up
G6H G7H 10us min.
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.40
Thin Wafer Technology enables high efficiency solutions
5.3 IGBT Application Map
2010 2011
RJH1BF Series
Short Circuit Capability
RJH1CD/V (5s) / RJH1CM(10s) series
G7H
1600V and up
1350V
1200V
1100V
600V
RJH1CF/C D/CM/CV
Series
RJH1DF Series
RJH1F series High Speed
Short Circuit CapabilityRJH60D/A8x(5s) RJH60M(10s)
Package IntegrationRJQ series
G6HReverse Conducting
RJH60FXR Series
2012
Application-optimised characteristics
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.41
5.4 Renesas IGBT Lineup Outline
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.42
Power Device FRD Technology
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.43
6.1 Si-FRD, SiC-SBD Roadmap
2011 2012 2013
600VU-FRD1”C” Series
600VU-FRD1”C” Series
(FY)
600VSiC-SBD
Multi Chip Device
600VSiC-SBD
Multi Chip Device
2014
1200VSiC-SBD
300-600VU-FRD2”5” Series
Inverter for HA, LED LightingLow VF 50ns
Moving forward High Performance and Enlarging SiC Wafer Size, for HA and FA Inverter Moving forward High Performance and Enlarging SiC Wafer Size, for HA and FA Inverter
1800VSiC-SBD1800VSiC-SBD
2015
600VU-FRD3
High Breakdown Voltage
600VSiC-SBD
High-speed Motor, PFCUltra High-speed trr 25ns
Solar Power Conditioner, UPSLow VF 35nsRJU60xx
650V, 1250VFRD, with Low EMI
Ultra High Speed Inverter, PFCUltra High Speed trr 15nsRJS6004/6005
RJQ6020/21/22 1800VFRD, with Low EMI (Soft-Recovery FRD)
SiC-SBD Enlarging Wafer Size
High Current 50A to 200ARJU65Ex,RJU1CEx
:Under planning
Hig
h br
eakd
own
volta
ge, H
igh
curr
ent
Under Development
Under Development
Under Development
Under Development
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.44
Qrr
IF=2.0Adi/dt=20A/sTc=250C
80ns/div
RJU60C3trr=50nsQrr=48nC
RJU6052trr=25nsQrr=4.0nC
6.2 Strength of Renesas Si-FRD, SiC-SBD
Focusing on Low VF Focusing on Low VF Focusing on Low VF
VF [V]0 1.0 2.0 3.0
0
Trr [
ns] 50
SiC-SBD
“C” Series (U-FRD)
“5” Series(U-FRDII)
VF [V]0 1.0 2.0 3.0
Tc=25C
IF[V
]
0.1
1.0
10
100 Company DCompany E
Company F
Renesas(RJU60C3)
““SiCSiC--SBDSBD”” SiSi--FRDFRD““55”” SeriesSeries
SiSi--FRDFRD““CC”” SeriesSeries
Focusing on High-SpeedFocusing on HighFocusing on High--SpeedSpeed
Reducing Conduction LossReducing Conduction Loss Reducing Switching LossReducing Switching Loss
High Performance (Low VF, High-Speed) High PerformanceHigh Performance (Low VF, High(Low VF, High--Speed)Speed)
Better
Better
InverterServer
<Note>Generally, there are a Trade-Off relationship between VF and Trr. When Trr become faster, VF become high.It is important to select products that is suitable for requirement of application.
<Note>Generally, there are a Trade-Off relationship between VF and Trr. When Trr become faster, VF become high.It is important to select products that is suitable for requirement of application.
Reducing Conduction LossReducing Conduction Loss Reducing Switching LossReducing Switching Loss
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.45
6.3 FRD Reverse Recovery Characteristic
Suitable for communication product!
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.46
6.4 FRD Lineup Outline
Other P/N, Please refer to Renesas selection guide
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.47
Photocoupler Technology
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.48
7.1 Renesas Photocoupler
High Endurance against Thermal Shock
Pb Free
Wide Variety of Lineups
Safety Standards
All series Photocopier Maker
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.49
7.2 Photocoupler Development Roadmap
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.50
7.3 Transistor Photocoupler
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.51
7.4 High Speed Photocoupler
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.52
7.5 Application Example - Inverter/AC Servo
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.53
400V⇒690V
AC ServoAC ServoAC ServoAC Servo
InverterPower Conditioner600V⇒1000V
14.5mm
Now in Mass Production:- PS9905 (IGBT driver) - PS9924 (High Speed 10Mb/s)
Mounting Area
Creepage
Figure
Company A RENESAS
13mm 14.5mm204mm 112mm2 2
55% Reduction
Higher safety, higher temperature & higher working voltage
7.6 Application Optimisation: Optocoupler
Renesas’ 14.5mm creep age distance contributes to developing smaller facilities:
- Large capacity motor drives - Inverters - AC Servos - Power conditioners
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.54
Others Standard Products
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.55
8.1 Renesas SRAM Products
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.56
8.2 SRAM Roadmap
Other P/N, please refer to selection guide
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.57
APPLICATION Examples
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.58
HV Power Device UPS Application
UPS (Half Bridge Circuit)
~
Filter
Filter
MCU
~
Battery Gate DriverCharging BatteryRJK50xx
InputAC100V
OutputAC100V
ConverterRJK60xx
InverterRJK60xx
Boosting (DC/DC)RJK10xx
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.59
*:PV: Photo Voltaic
System RelatedAC Output
Holedevice
I/O Port
TemperatureSensor
MCU for System Control
Gate Driver
Reset IC
InverterRJH60Dx
Boost ChopperRJH608xBRJH60Fx
EEPROM
*1
Gate Driver
HoleDevice
HoleDevice
HoleDevice
PV Module*
辅助电源
HighReliability
HighEfficiency
HV Power Device Solar Application
Solar system for Home Usage
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.60
IC
IGBTRJH60FxorRJH608xB
IGBTRJH60Fx
Photo couplerPS9305PS9506
R2A2011X
OP AmpHA1630XXUPC358
V850、SH7149 Microcomputer support RNA519XX
Heat sensor
EEPROMEEPROMR1EX24XX
Heating coil
Photo couplerPS9305PS9506
Power SupplyPFC Circuit
Microcomputer
PFC IC
Power sensor
High EfficiencyIH Cocker
HV Power Device IH Cooker Application
High Efficiency
+-
+ー
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.61
Motor
<Inverter>
<PFC>
Opto coupler
MCU
PWM
PFC-IC
PS9306,PS9506PS9305,PS9505
PFC Power Supply + Inverter Circuit for Motor ControlFRDRJU60Cx / RJU605x series
Inverter IGBTRJH60Dx
PFC-IGBTRJH60Fx/G6Hor RJH608xB
HV Power Device PFC Application
瑞萨电子(中国)有限公司
© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.