bpw 34 fas - osram · bpw 34 fas 1 version 1.4 | 2018-06-26 produktdatenblatt | version 1.1 bpw 34...

16
BPW 34 FAS 1 Version 1.4 | 2018-06-26 www.osram-os.com BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications Rain sensors Features: Package: black epoxy Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Especially suitable for applications from 730 nm to 1100 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density Suitable for reflow soldering Ordering Information Type Photocurrent Photocurrent Ordering Code typ. E e = 1 mW/cm²; λ = 870 nm; V R = 5 V E e = 1 mW/cm²; λ = 870 nm; V R = 5 V I P I P BPW 34 FAS ≥ 40 µA 50 µA Q65110A3121

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Page 1: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

1 Version 1.4 | 2018-06-26

Produktdatenblatt | Version 1.1 www.osram-os.com

BPW 34 FAS

DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT

Applications — Rain sensors

Features: — Package: black epoxy

— Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. — ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— Especially suitable for applications from 730 nm to 1100 nm — Short switching time (typ. 20 ns) — DIL plastic package with high packing density — Suitable for reflow soldering

Ordering Information

Type Photocurrent Photocurrent Ordering Codetyp.

Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V Ee = 1 mW/cm²; λ = 870 nm; VR = 5 VIP IP

BPW 34 FAS ≥ 40 µA 50 µA Q65110A3121

Page 2: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

2 Version 1.4 | 2018-06-26

Maximum RatingsTA = 25 °C

Parameter Symbol Values

Operating Temperature Top min. max.

-40 °C 100 °C

Storage temperature Tstg min. max.

-40 °C 100 °C

Reverse voltage VR max. 16 V

Reverse voltage t ≤ 2 min

VR max. 32 V

Total power dissipation Ptot max. 150 mW

ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

VESD 2 kV

Page 3: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

3 Version 1.4 | 2018-06-26

CharacteristicsTA = 25 °C

Parameter Symbol Values

Wavelength of max sensitivity λS max typ. 880 nm

Spectral range of sensitivity λ10% typ. 730 ... 1100 nm

Radiant sensitive area A typ. 7.02 mm²

Dimensions of active chip area L x W typ. 2.65 x 2.65 mm x mm

Half angle φ typ. 60 °

Dark current VR = 10 V

IR typ. max.

2 nA 30 nA

Spectral sensitivity of the chip λ = 870 nm

Sλ typ. 0.65 A / W

Quantum yield of the chip λ = 870 nm

η typ. 0.93 Electrons / Photon

Open-circuit voltage Ee = 0.5 mW/cm²; λ = 870 nm

VO min. typ.

250 mV 320 mV

Short-circuit current Ee = 0.5 mW/cm²; λ = 870 nm

ISC typ. 23 µA

Rise time VR = 5 V; RL = 50 Ω; λ = 850 nm; IP = 800 µA

tr typ. 0.02 µs

Fall time VR = 5 V; RL = 50 Ω; λ = 850 nm; IP = 800 µA

tf typ. 0.02 µs

Forward voltage IF = 100 mA; E = 0

VF typ. 1.3 V

Capacitance VR = 0 V; f = 1 MHz; E = 0

C0 typ. 72 pF

Temperature coefficient of voltage TCV typ. -2.6 mV / K

Temperature coefficient of short-circuit current λ = 870 nm

TCI typ. 0.03 % / K

Noise equivalent power VR = 10 V; λ = 870 nm

NEP typ. 0.039 pW / Hz1/2

Detection limit VR = 10 V; λ = 870 nm

D* typ. 6.8e12 cm x Hz1/2 / W

Page 4: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

4 Version 1.4 | 2018-06-26

λ

OHF01430

400

relS

0600 800 1000 nm 1200

10

20

30

40

50

60

70

80

%

100

Relative Spectral Sensitivity 1), 2) Srel = f (λ)

OHF01402

90

80

70

60

50

40 30 20 10

20 40 60 80 100 1200.40.60.81.0

ϕ

0.2

0.4

0.6

0.8

1.0

1000

0

0

Directional Characteristics 1), 2) Srel = f (φ)

Page 5: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

5 Version 1.4 | 2018-06-26

0

OHF00080

Ι R

RV0 5 10 15 V 20

1000

2000

3000

4000

pA

Dark Current 1), 2)

IR = f (VR) ; E = 0

E

OHF01428

e

010

-11010 1 10 2 10 4

10 0

10 1

10 2

10 3 410

310

210

110

10 0

VO

µA mV

Ι P

VO

2W/cmµ

Photocurrent/Open-Circuit Voltage 1), 2)

IP (VR = 5 V) / VO = f (Ee)

V

OHF00081

R

-210

C

0-110 010 110 210V

10

20

30

40

50

60

70

80

pF

100

Capacitance 1), 2)

C = f (VR); f = 1 MHz; E = 0;

Page 6: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

6 Version 1.4 | 2018-06-26

OHF05717

AT

10-1

˚C0 20 40 60 80 100

RInA

100

101

102

103

104

Dark Current 2)

IR = f (TA); E = 0; VR = 10 V

T

OHF00394

A

0

totP

020 40 60 80 ˚C 100

mW

20

40

60

80

100

120

140

160

Power ConsumptionPtot = f (TA);

Page 7: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

7 Version 1.4 | 2018-06-26

Dimensional Drawing 3)

4.5 (0.177)4.3 (0.169)

4.0

(0.1

57)

3.7

(0.1

46)

1.5

(0.0

59)

1.7

(0.0

67)

0.9

(0.0

35)

0.7

(0.0

28)

Photosensitive area Cathode lead

GEOY6863

0.3

(0.0

12)

6.7 (0.264)

6.2 (0.244)1.

2 (0

.047

)1.

1 (0

.043

)

(0...

0.00

4)

0...5

˚0.

2 (0

.008

)0.

1 (0

.004

)

1.1 (0.043)0.9 (0.035)

2.65 (0.104) x 2.65 (0.104)

1.8 (0.071)±0.2 (0.008)

Chip position

0...0

.1

Approximate Weight: 43.0 mg

Package marking: Cathode

Page 8: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

8 Version 1.4 | 2018-06-26

Recommended Solder Pad 3)

Reflow Soldering ProfileProduct complies to MSL Level 4 acc. to JEDEC J-STD-020E

00

s

OHA04525

50

100

150

200

250

300

50 100 150 200 250 300t

T

˚C

St

t

Pt

Tp240 ˚C

217 ˚C

245 ˚C

25 ˚C

L

Page 9: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

9 Version 1.4 | 2018-06-26

Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum

Ramp-up rate to preheat*)

25 °C to 150 °C2 3 K/s

Time tSTSmin to TSmax

tS 60 100 120 s

Ramp-up rate to peak*)

TSmax to TP

2 3 K/s

Liquidus temperature TL 217 °C

Time above liquidus temperature tL 80 100 s

Peak temperature TP 245 260 °C

Time within 5 °C of the specified peaktemperature TP - 5 K

tP 10 20 30 s

Ramp-down rate*TP to 100 °C

3 6 K/s

Time25 °C to TP

480 s

All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

Taping 3)

OHAY2287

1.5 (0.059)

4 (0.157)

0.8 (0.031)

2 (0.079)

4.1 (0.161)

1.75

(0.0

69)

5.5

(0.2

17) 12

(0.4

72)6.9

(0.2

72)

Cathode/Collector Side

Page 10: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

10 Version 1.4 | 2018-06-26

Tape and Reel 4)

D0

2P

P0

1P

WFE

Direction of unreeling

N

W1

2W

A

OHAY0324

Label

Leader:Trailer:

13.0

Direction of unreeling

±0.2

5

min. 160 mm *min. 400 mm *

*) Dimensions acc. to IEC 60286-3; EIA 481-D

Reel dimensions [mm]A W Nmin W1 W2 max Pieces per PU

180 mm 12 + 0.3 / - 0.1 60 12.4 + 2 18.4 1500

Page 11: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

11 Version 1.4 | 2018-06-26

Barcode-Product-Label (BPL)

Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

Dry Packing Process and Materials 3)

OHA00539

OSRAM

Moisture-sensitive label or print

Barcode label

Desiccant

Humidity indicator

Barcode label

OSRAM

Please check the HIC immidiately afterbag opening.

Discard if circles overrun.Avoid metal contact.

WET

Do not eat.

Comparatorcheck dot

parts still adequately dry.

examine units, if necessary

examine units, if necessary

5%

15%

10%bake units

bake units

If wet,

change desiccant

If wet,

Humidity IndicatorMIL-I-8835

If wet,

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Page 12: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

12 Version 1.4 | 2018-06-26

Transportation Packing and Materials 3)

OHA02044

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

OSRAM

Packing

Sealing label

Barcode label

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or e

quivale

nt pro

cessing (p

eak package

2. Afte

r th

is b

ag is o

pened,

devices th

at will

be s

ubjecte

d to in

frare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body te

mp.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD-0

33 for bake p

rocedure

.

Floor

time s

ee belo

w

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Floor

time

1 Y

ear

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICONDUCTO

RS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Barcode label

Dimensions of transportation box in mmWidth Length Height

195 ± 5 mm 195 ± 5 mm 30 ± 5 mm

Page 13: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

13 Version 1.4 | 2018-06-26

NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the LED specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.

Subcomponents of this LED contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize LED exposure to aggressive substances during storage, pro-duction, and use. LEDs that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.

For further application related informations please visit www.osram-os.com/appnotes

Page 14: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

14 Version 1.4 | 2018-06-26

Disclaimer

DisclaimerLanguage english will prevail in case of any discrepancies or deviations between the two language word-ings.

Attention please!The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version in the OSRAM OS Webside.

PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.

Product safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.In case Buyer – or Customer supplied by Buyer– considers using OSRAM OS components in product safety devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyze and coordi-nate the customer-specific request between OSRAM OS and Buyer and/or Customer.

Page 15: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

15 Version 1.4 | 2018-06-26

Glossary1) Testing temperature: TA = 25°C2) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data

or calculated correlations of technical parameters can only reflect statistical figures. These do not nec-essarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.

3) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm.

4) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

Page 16: BPW 34 FAS - Osram · BPW 34 FAS 1 Version 1.4 | 2018-06-26 Produktdatenblatt | Version 1.1 BPW 34 FAS DIL SMT Silicon PIN Photodiode with Daylight Filter; in SMT Applications —

BPW 34 FAS

16 Version 1.4 | 2018-06-26

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