bjts
DESCRIPTION
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Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
BB
CC
EE
The Bipolar Junction Transistor_______________________________slide 3The Bipolar Junction Transistor_______________________________slide 3
BJT Relationships – Equations________________________________slide 4BJT Relationships – Equations________________________________slide 4
DC DC and DC and DC _____________________________________________slides 5 _____________________________________________slides 5
BJT Example_______________________________________________slide 6BJT Example_______________________________________________slide 6
BJT Transconductance Curve_________________________________slide 7BJT Transconductance Curve_________________________________slide 7
Modes of Operation_________________________________________slide 8Modes of Operation_________________________________________slide 8
Three Types of BJT Biasing__________________________________slide 9Three Types of BJT Biasing__________________________________slide 9
Common Base______________________slide 10-11Common Base______________________slide 10-11
Common Emitter_____________________slide 12Common Emitter_____________________slide 12
Common Collector___________________slide 13Common Collector___________________slide 13
Eber-Moll Model__________________________________________slides 14-15Eber-Moll Model__________________________________________slides 14-15
Small Signal BJT Equivalent Circuit__________________________slides 16Small Signal BJT Equivalent Circuit__________________________slides 16
The Early Effect___________________________________________slide 17The Early Effect___________________________________________slide 17
Early Effect Example_______________________________________slide 18Early Effect Example_______________________________________slide 18
Breakdown Voltage________________________________________slide 19Breakdown Voltage________________________________________slide 19
Sources__________________________________________________slide 20Sources__________________________________________________slide 20
Table of ContentsTable of Contents
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
The BJT – Bipolar Junction TransistorThe BJT – Bipolar Junction Transistor
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
Note: It will be very helpful to go through the Analog Electronics Note: It will be very helpful to go through the Analog Electronics Diodes Tutorial to get information on doping, n-type and p-type materials.Diodes Tutorial to get information on doping, n-type and p-type materials.
The Two Types of BJT Transistors:The Two Types of BJT Transistors:
npnnpn pnppnp
nn pp nnEE
BB
CC pp nn ppEE
BB
CC
Cross SectionCross Section Cross SectionCross Section
BB
CC
EE
Schematic Schematic SymbolSymbol
BB
CC
EE
Schematic Schematic SymbolSymbol
• Collector doping is usually ~ 10Collector doping is usually ~ 1066
• Base doping is slightly higher ~ 10Base doping is slightly higher ~ 1077 – 10 – 1088
• Emitter doping is much higher ~ 10Emitter doping is much higher ~ 101515
BJT Relationships - EquationsBJT Relationships - Equations
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BB
CCEE
IIEE IICC
IIBB
--
++
VVBEBE VVBCBC
++
--
++-- VVCECE
BB
CCEE
IIEE IICC
IIBB--
++
VVEBEB VVCBCB
++
--
++ --VVECEC
npnnpn
IIEE = I = IBB + I + ICC
VVCECE = -V = -VBCBC + V + VBEBE
pnppnp
IIEE = I = IBB + I + ICC
VVECEC = V = VEBEB - V - VCBCB
Note: The equations seen above are for the Note: The equations seen above are for the transistor, not the circuit.transistor, not the circuit.
DC DC and DC and DC
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= Common-emitter current gain= Common-emitter current gain
= Common-base current gain= Common-base current gain
= I= ICC = I = ICC
IIBB I IEE
The relationships between the two parameters are:The relationships between the two parameters are:
= = = =
+ 1+ 1 1 - 1 -
Note: Note: and and are sometimes referred to as are sometimes referred to as dcdc and and dcdc
because the relationships being dealt with in the BJT because the relationships being dealt with in the BJT are DC.are DC.
BJT ExampleBJT Example
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Using Common-Base NPN Circuit ConfigurationUsing Common-Base NPN Circuit Configuration
++__
++__
Given: IGiven: IBB = 50 = 50 A , I A , ICC = 1 mA = 1 mA
Find: IFind: IEE , , , and , and
Solution:Solution:
IIEE = I = IBB + I + ICC = 0.05 mA + 1 mA = 1.05 mA = 0.05 mA + 1 mA = 1.05 mA
= I= ICC / I / IBB = 1 mA / 0.05 mA = 20 = 1 mA / 0.05 mA = 20
= I= ICC / I / IEE = 1 mA / 1.05 mA = 0.95238 = 1 mA / 1.05 mA = 0.95238
could also be calculated using the value of could also be calculated using the value of with the formula from the previous slide. with the formula from the previous slide.
= = = 20 = 0.95238 = 20 = 0.95238
+ 1 21+ 1 21
IICC
IIEE
IIBB
VVCBCB
VVBEBE
EE
CC
BB
BJT Transconductance CurveBJT Transconductance Curve
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
Typical NPN Transistor Typical NPN Transistor 11
VVBEBE
IICC
2 mA2 mA
4 mA4 mA
6 mA6 mA
8 mA8 mA
0.7 V0.7 V
Collector Current:Collector Current:
IICC = = I IESES eeVVBEBE//VVTT
Transconductance: Transconductance: (slope of the curve)(slope of the curve)
ggmm = = I ICC / / V VBEBE
IIESES = The reverse saturation current = The reverse saturation current
of the B-E Junction.of the B-E Junction.
VVTT = kT/q = 26 mV (@ T=300K) = kT/q = 26 mV (@ T=300K)
= the emission coefficient and is = the emission coefficient and is usually ~1usually ~1
Modes of OperationModes of Operation
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• Most important mode of operationMost important mode of operation
• Central to amplifier operationCentral to amplifier operation
• The region where current curves are practically flatThe region where current curves are practically flat
Active:Active:
Saturation:Saturation: • Barrier potential of the junctions cancel each other out Barrier potential of the junctions cancel each other out causing a virtual shortcausing a virtual short
Cutoff:Cutoff: • Current reduced to zeroCurrent reduced to zero
• Ideal transistor behaves like an open switchIdeal transistor behaves like an open switch
* Note: There is also a mode of operation * Note: There is also a mode of operation called inverse active, but it is rarely used.called inverse active, but it is rarely used.
Three Types of BJT BiasingThree Types of BJT Biasing
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Biasing the transistor refers to applying voltage to get the Biasing the transistor refers to applying voltage to get the transistor to achieve certain operating conditions.transistor to achieve certain operating conditions.
Common-Base Biasing (CB) :Common-Base Biasing (CB) : input input = V= VEBEB & I & IEE
output = Voutput = VCBCB & I & ICC
Common-Emitter Biasing (CE):Common-Emitter Biasing (CE): input input = V= VBEBE & I & IBB
outputoutput = V= VCECE & I & ICC
Common-Collector Biasing (CC):Common-Collector Biasing (CC): input input = V= VBCBC & I & IBB
output output = V= VECEC & I & IEE
Common-BaseCommon-Base
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Although the Common-Base configuration is not the most Although the Common-Base configuration is not the most common biasing type, it is often helpful in the understanding of common biasing type, it is often helpful in the understanding of
how the BJT works. how the BJT works.
Emitter-Current CurvesEmitter-Current Curves
Sa
tura
tio
n R
egio
nS
atu
rati
on
Reg
ion
IIEE
IICC
VVCBCB
Active Active RegionRegion
CutoffCutoff
IIEE = 0 = 0
Common-BaseCommon-Base
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Circuit Diagram: NPN TransistorCircuit Diagram: NPN Transistor
++ __ ++ __
IICC IIEE
IIBB
VVCBCB VVBEBE
EECC
BB
VVCECE
VVBEBEVVCBCB
Region of Region of OperationOperation
IICC VVCECE VVBEBE VVCBCBC-B C-B BiasBias
E-B E-B BiasBias
ActiveActive IIBB =V=VBEBE+V+VCECE ~0.7V~0.7V 0V0V Rev.Rev. Fwd.Fwd.
SaturationSaturation MaxMax ~0V~0V ~0.7V~0.7V -0.7V<V-0.7V<VCECE<0<0 Fwd.Fwd. Fwd.Fwd.
CutoffCutoff ~0~0 =V=VBEBE+V+VCECE 0V0V 0V0V Rev.Rev. NoneNone/Rev./Rev.
The Table Below lists assumptions The Table Below lists assumptions that can be made for the attributes that can be made for the attributes of the common-base biased circuit of the common-base biased circuit in the different regions of in the different regions of operation. Given for a Silicon NPN operation. Given for a Silicon NPN transistor.transistor.
Common-EmitterCommon-Emitter
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Circuit DiagramCircuit Diagram
++__VVCCCC
IICCVVCECE
IIBB
Collector-Current CurvesCollector-Current Curves
VVCECE
IICC
Active Active RegionRegion
IIBB
Saturation RegionSaturation RegionCutoff RegionCutoff Region
IIBB = 0 = 0
Region of Operation
Description
Active Small base current controls a large collector current
Saturation VCE(sat) ~ 0.2V, VCE increases with IC
Cutoff Achieved by reducing IB to 0, Ideally, IC will also equal 0.
Common-CollectorCommon-Collector
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Emitter-Current CurvesEmitter-Current Curves
VVCECE
IIEE
Active Active RegionRegion
IIBB
Saturation RegionSaturation Region
Cutoff RegionCutoff RegionIIBB = 0 = 0
The Common-The Common-Collector biasing Collector biasing circuit is basically circuit is basically equivalent to the equivalent to the common-emitter common-emitter biased circuit except biased circuit except instead of looking at instead of looking at IICC as a function of V as a function of VCECE
and Iand IB B we are looking we are looking
at Iat IEE..
Also, since Also, since ~ 1, and ~ 1, and = I = ICC/I/IEE that means that means
IICC~I~IEE
Eber-Moll BJT ModelEber-Moll BJT Model
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
The Eber-Moll Model for BJTs is fairly complex, but it is The Eber-Moll Model for BJTs is fairly complex, but it is valid in all regions of BJT operation. The circuit diagram valid in all regions of BJT operation. The circuit diagram below shows all the components of the Eber-Moll Model:below shows all the components of the Eber-Moll Model:
EE CC
BB
IIRRIIFF
IIEE IICC
IIBB
RRIIEERRIICC
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
Eber-Moll BJT ModelEber-Moll BJT Model
RR = Common-base current gain (in forward active mode) = Common-base current gain (in forward active mode)
FF = Common-base current gain (in inverse active mode) = Common-base current gain (in inverse active mode)
IIESES = Reverse-Saturation Current of B-E Junction = Reverse-Saturation Current of B-E Junction
IICSCS = Reverse-Saturation Current of B-C Junction = Reverse-Saturation Current of B-C Junction
IICC = = FFIIFF – I – IRR IIBB = I = IEE - I - ICC
IIEE = I = IFF - - RRIIRR
IIFF = I = IESES [exp(qV [exp(qVBEBE/kT) – 1]/kT) – 1] IIRR = I = ICC [exp(qV [exp(qVBCBC/kT) – 1]/kT) – 1]
If IIf IESES & I & ICSCS are not given, they can be determined using various are not given, they can be determined using various
BJT parameters.BJT parameters.
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
Small Signal BJT Equivalent CircuitSmall Signal BJT Equivalent CircuitThe small-signal model can be used when the BJT is in the active region. The small-signal model can be used when the BJT is in the active region.
The small-signal active-region model for a CB circuit is shown below:The small-signal active-region model for a CB circuit is shown below:
iiBBrr
iiEE
iiCCiiBB
BB CC
EE
rr = ( = ( + 1) * + 1) * VVTT
IIEE
@ @ = 1 and T = 25 = 1 and T = 25CC
rr = ( = ( + 1) * 0.026 + 1) * 0.026
IIEE
Recall:Recall:
= I= IC C / I/ IBB
The Early Effect (Early Voltage)The Early Effect (Early Voltage)
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
VVCECE
IICCNote: Common-Emitter Note: Common-Emitter ConfigurationConfiguration
-V-VAA
IIBB
GreenGreen = Ideal I = Ideal ICC
OrangeOrange = Actual I = Actual ICC (I (ICC’)’)
IICC’ = I’ = ICC V VCECE + 1 + 1
VVAA
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
Early Effect ExampleEarly Effect Example
Given:Given: The common-emitter circuit below with IThe common-emitter circuit below with IBB = 25 = 25A, A,
VVCCCC = 15V, = 15V, = 100 and V = 100 and VAA = 80. = 80.
Find: a) The ideal collector currentFind: a) The ideal collector current
b) The actual collector currentb) The actual collector current
Circuit DiagramCircuit Diagram
++__VVCCCC
IICCVVCECE
IIBB
= 100 = I= 100 = ICC/I/IBB
a)a)
IICC = 100 * I = 100 * IBB = 100 * (25x10 = 100 * (25x10-6-6 A) A)
IICC = 2.5 mA = 2.5 mA
b) Ib) ICC’ = I’ = ICC V VCECE + 1 + 1 = 2.5x10 = 2.5x10-3-3 15 + 1 15 + 1 = 2.96 mA= 2.96 mA
VVAA 80 80
IICC’ = 2.96 mA’ = 2.96 mA
Breakdown VoltageBreakdown Voltage
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002
The maximum voltage that the BJT can withstand.The maximum voltage that the BJT can withstand.
BVBVCEOCEO = =The breakdown voltage for a common-emitter The breakdown voltage for a common-emitter
biased circuit. This breakdown voltage usually biased circuit. This breakdown voltage usually ranges from ~20-1000 Volts.ranges from ~20-1000 Volts.
BVBVCBOCBO = = The breakdown voltage for a common-base biased The breakdown voltage for a common-base biased
circuit. This breakdown voltage is usually much circuit. This breakdown voltage is usually much higher than BVhigher than BVCEOCEO and has a minimum value of ~60 and has a minimum value of ~60
Volts.Volts.
Breakdown Voltage is Determined By: Breakdown Voltage is Determined By:
• The Base WidthThe Base Width
• Material Being UsedMaterial Being Used
• Doping LevelsDoping Levels
• Biasing VoltageBiasing Voltage
SourcesSourcesDailey, Denton. Dailey, Denton. Electronic Devices and Circuits, Discrete and Integrated.Electronic Devices and Circuits, Discrete and Integrated. Prentice Hall, New Prentice Hall, New
Jersey: 2001. (pp 84-153)Jersey: 2001. (pp 84-153)
11 Figure 3.7, Transconductance curve for a typical npn transistor, pg 90. Figure 3.7, Transconductance curve for a typical npn transistor, pg 90.
Liou, J.J. and Yuan, J.S. Liou, J.J. and Yuan, J.S. Semiconductor Device Physics and SimulationSemiconductor Device Physics and Simulation. Plenum Press, . Plenum Press, New York: 1998.New York: 1998.
Neamen, Donald. Neamen, Donald. Semiconductor Physics & Devices. Basic Principles.Semiconductor Physics & Devices. Basic Principles. McGraw-Hill, McGraw-Hill, Boston: 1997. (pp 351-409)Boston: 1997. (pp 351-409)
Web SitesWeb Sites
http://www.infoplease.com/ce6/sci/A0861609.html
Kristin Ackerson, Virginia Tech EEKristin Ackerson, Virginia Tech EESpring 2002Spring 2002